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Author : Thomas Andreas Georg Eberlein
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (142 download)
Download or read book Point and Extended Defects in Group IV Semiconductors written by Thomas Andreas Georg Eberlein and published by . This book was released on 2004 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : S. Pizzini
Publisher : Materials Research Forum LLC
ISBN 13 : 1945291230
Total Pages : 134 pages
Book Rating : 4.9/5 (452 download)
Download or read book Point Defects in Group IV Semiconductors written by S. Pizzini and published by Materials Research Forum LLC. This book was released on 2017-04-05 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt: A self-consistent model of point defects requires a reliable connection with the experimentally deduced structural, spectroscopic and thermodynamic properties of the defect centres, to allow their unambiguous identification. This book focuses on the properties of defects in group IV semiconductors and seeks to clarify whether full knowledge of their chemical nature can account for several problems encountered in practice. It is shown how difficult the fulfilment of self-consistency conditions can be, even today, after more than four decades of dedicated research work, especially in the case of compound semiconductors, such as SiC, but also in the apparently simple cases of silicon and germanium. The reason for this is that the available microscopic models do not yet account for defect interactions in real solids.
Author : Edmund G. Seebauer
Publisher : Springer Science & Business Media
ISBN 13 : 1848820593
Total Pages : 304 pages
Book Rating : 4.8/5 (488 download)
Download or read book Charged Semiconductor Defects written by Edmund G. Seebauer and published by Springer Science & Business Media. This book was released on 2008-11-14 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.
Author : Giorgio Benedek
Publisher : Springer Science & Business Media
ISBN 13 : 1468457098
Total Pages : 286 pages
Book Rating : 4.4/5 (684 download)
Download or read book Point and Extended Defects in Semiconductors written by Giorgio Benedek and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: The systematic study of defects in semiconductors began in the early fifties. FrQm that time on many questions about the defect structure and properties have been an swered, but many others are still a matter of investigation and discussion. Moreover, during these years new problems arose in connection with the identification and char acterization of defects, their role in determining transport and optical properties of semiconductor materials and devices, as well as from the technology of the ever in creasing scale of integration. This book presents to the reader a view into both basic concepts of defect physics and recent developments of high resolution experimental techniques. The book does not aim at an exhaustive presentation of modern defect physics; rather it gathers a number of topics which represent the present-time research in this field. The volume collects the contributions to the Advanced Research Workshop "Point, Extended and Surface Defects in Semiconductors" held at the Ettore Majo rana Centre at Erice (Italy) from 2 to 7 November 1988, in the framework of the International School of Materials Science and Technology. The workshop has brought together scientists from thirteen countries. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.
Author : Maurizio Casalino
Publisher : MDPI
ISBN 13 : 3036500448
Total Pages : 148 pages
Book Rating : 4.0/5 (365 download)
Download or read book Miniaturized Silicon Photodetectors written by Maurizio Casalino and published by MDPI. This book was released on 2021-01-15 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon (Si) technologies provide an excellent platform for the design of microsystems where photonic and microelectronic functionalities are monolithically integrated on the same substrate. In recent years, a variety of passive and active Si photonic devices have been developed, and among them, photodetectors have attracted particular interest from the scientific community. Si photodiodes are typically designed to operate at visible wavelengths, but, unfortunately, their employment in the infrared (IR) range is limited due to the neglectable Si absorption over 1100 nm, even though the use of germanium (Ge) grown on Si has historically allowed operations to be extended up to 1550 nm. In recent years, significant progress has been achieved both by improving the performance of Si-based photodetectors in the visible range and by extending their operation to infrared wavelengths. Near-infrared (NIR) SiGe photodetectors have been demonstrated to have a “zero change” CMOS process flow, while the investigation of new effects and structures has shown that an all-Si approach could be a viable option to construct devices comparable with Ge technology. In addition, the capability to integrate new emerging 2D and 3D materials with Si, together with the capability of manufacturing devices at the nanometric scale, has led to the development of new device families with unexpected performance. Accordingly, this Special Issue of Micromachines seeks to showcase research papers, short communications, and review articles that show the most recent advances in the field of silicon photodetectors and their respective applications.
Author : D. B. Holt
Publisher : Cambridge University Press
ISBN 13 : 1139463594
Total Pages : 625 pages
Book Rating : 4.1/5 (394 download)
Download or read book Extended Defects in Semiconductors written by D. B. Holt and published by Cambridge University Press. This book was released on 2007-04-12 with total page 625 pages. Available in PDF, EPUB and Kindle. Book excerpt: A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Author : David J. Fisher
Publisher : Trans Tech Publications Ltd
ISBN 13 : 303570709X
Total Pages : 500 pages
Book Rating : 4.0/5 (357 download)
Download or read book Defects and Diffusion in Semiconductors IV written by David J. Fisher and published by Trans Tech Publications Ltd. This book was released on 2001-11-30 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt: This fourth volume in the series covering the latest results in the field includes abstracts of papers which appeared within the approximate period of mid-2000 to mid-2001. The scope of this coverage includes, in addition to traditional semiconductors, the increasingly important carbide, nitride and silicide semiconductors. Semiconducting oxides are not covered, as information on these can be found in the "Defects and Diffusion in Ceramics Retrospective" series. The increasing interest in ceramic-type semiconductors is again reflected by the invited papers, which include an extensive review of the particular problems involved in growing GaN films on sapphire substrates. Nevertheless, established semiconductors continue to spring surprises and to offer new problems and these are also addressed here by a number of further detailed reviews of work on Si, InP and InGaP. Finally, new results are to be found here concerning diffusive processes and defect behaviour in Ge, GeSi, InGaAs, Si and ZnSe. Altogether, these 8 long reviews, 9 research papers and 752 selected abstracts provide an invaluable and up-to-date insight into current and future trends in semiconductor theory, processing and applications.
Author :
Publisher : Academic Press
ISBN 13 : 0128019409
Total Pages : 458 pages
Book Rating : 4.1/5 (28 download)
Download or read book Defects in Semiconductors written by and published by Academic Press. This book was released on 2015-06-08 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. Expert contributors Reviews of the most important recent literature Clear illustrations A broad view, including examination of defects in different semiconductors
Author : Gudrun Kissinger
Publisher : CRC Press
ISBN 13 : 1466586648
Total Pages : 436 pages
Book Rating : 4.4/5 (665 download)
Download or read book Silicon, Germanium, and Their Alloys written by Gudrun Kissinger and published by CRC Press. This book was released on 2014-12-09 with total page 436 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon–germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium nanocrystals. World-recognized experts are the authors of the book’s chapters, which span bulk, thin film, and nanostructured materials growth and characterization problems, theoretical modeling, crystal defects, diffusion, and issues of key applicative value, including chemical etching as a defect delineation technique, the spectroscopic analysis of impurities, and the use of devices as tools for the measurement of materials quality.
Author :
Publisher : John Wiley & Sons
ISBN 13 : 1118514602
Total Pages : 416 pages
Book Rating : 4.1/5 (185 download)
Download or read book Physical Chemistry of Semiconductor Materials and Processes written by and published by John Wiley & Sons. This book was released on 2015-08-17 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: The development of solid state devices began a little more than a century ago, with the discovery of the electrical conductivity of ionic solids. Today, solid state technologies form the background of the society in which we live. The aim of this book is threefold: to present the background physical chemistry on which the technology of semiconductor devices is based; secondly, to describe specific issues such as the role of defects on the properties of solids, and the crucial influence of surface properties; and ultimately, to look at the physics and chemistry of semiconductor growth processes, both at the bulk and thin-film level, together with some issues relating to the properties of nano-devices. Divided into five chapters, it covers: Thermodynamics of solids, including phases and their properties and structural order Point defects in semiconductors Extended defects in semiconductors and their interactions with point defects and impurities Growth of semiconductor materials Physical chemistry of semiconductor materials processing With applications across all solid state technologies,the book is useful for advanced students and researchers in materials science, physics, chemistry, electrical and electronic engineering. It is also useful for those in the semiconductor industry.
Author : E. Simoen
Publisher : The Electrochemical Society
ISBN 13 : 1607685485
Total Pages : 315 pages
Book Rating : 4.6/5 (76 download)
Download or read book High Purity and High Mobility Semiconductors 13 written by E. Simoen and published by The Electrochemical Society. This book was released on 2014 with total page 315 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher : Academic Press
ISBN 13 : 0080864392
Total Pages : 711 pages
Book Rating : 4.0/5 (88 download)
Download or read book Oxygen in Silicon written by and published by Academic Press. This book was released on 1994-08-15 with total page 711 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume reviews the latest understanding of the behavior and roles of oxygen in silicon, which will carry the field into the ULSI era from the experimental and theoretical points of view. The fourteen chapters, written by recognized authorities representing industrial and academic institutions, cover thoroughly the oxygen related phenomena from the crystal growth to device fabrication processes, as well as indispensable diagnostic techniques for oxygen. Comprehensive study of the behavior of oxygen in silicon Discusses silicon crystals for VLSI and ULSI applications Thorough coverage from crystal growth to device fabrication Edited by technical experts in the field Written by recognized authorities from industrial and academic institutions Useful to graduate students, scientists in other disciplines, and active participants in the arena of silicon-based microelectronics research 297 original line drawings
Author : Peter Pichler
Publisher : Springer Science & Business Media
ISBN 13 : 9783211206874
Total Pages : 594 pages
Book Rating : 4.2/5 (68 download)
Download or read book Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2004-06-02 with total page 594 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Author : Jürgen Michel
Publisher :
ISBN 13 :
Total Pages : 744 pages
Book Rating : 4.3/5 (91 download)
Download or read book Defects in Electronic Materials II: Volume 442 written by Jürgen Michel and published by . This book was released on 1997-05-02 with total page 744 pages. Available in PDF, EPUB and Kindle. Book excerpt: The pervasive role of defects in determining the thermal, mechanical, electrical, optical and magnetic properties of materials is significant as is the knowledge and operation of generation and control of defects in electronic materials. Developing novel semiconductor materials, however, requires new insights into the role of defects to achieve new properties. New experimental techniques must be developed to study defects in small structures. Research groups come together in this book from MRS to provide a vivid picture of the current problems, progress and methods in defect studies in electronic materials. Topics include new techniques in defect studies; processing induced defects, plasma-induced point defects; processing induced defects -defects and gate-oxide integrity; point defects and reaction; point defects and interactions in Si; impurity diffusion and hydrogen in Si; dislocations in group IV semiconductors; point defects and defect interactions in SiGe; point defects in III-V compounds; compensation and structural defects in III-V compounds and layers and structures.
Author : Pietro della Casa
Publisher : Cuvillier Verlag
ISBN 13 : 3736963971
Total Pages : 250 pages
Book Rating : 4.7/5 (369 download)
Download or read book Two-step MOVPE, in-situ etching and buried implantation: applications to the realization of GaAs laser diodes written by Pietro della Casa and published by Cuvillier Verlag. This book was released on 2021-03-25 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work is about two-step epitaxial growth using metalorganic vapor-phase epitaxy (MOVPE) for the realization of edge-emitting near-infrared laser diodes. The fabricated gallium arsenide-based devices fall into two categories: high-power lasers (watt range, multimodal) and tunable lasers (milliwatt range, monomodal). Common to both cases is that surface contamination – particularly that due to oxygen – needs to be removed before regrowth. Thus, in-situ etching with carbon tetrabromide (CBr4) is first studied. The experimental results include kinetic data, the effects of different etching conditions as well as substrate characteristics, and the effectiveness in reducing surface contamination. These investigations pave the way to devices based on 2-step epitaxy combined with in-situ etching. Correspondingly, thermally-tuned SG-DBR lasers operating around 975 nm have been successfully realized, obtaining a tuning range of 21 nm. In addition, the possibility of using electronic tuning in similar devices has been explored. High-power broad-area lasers have also been realized, using two-step epitaxy combined with ex-situ and in-situ etching, to create a buried, shallow “mesa” containing the active zone. This approach allows introducing lateral electrical and optical confinement, and – simultaneously – non-absorbing mirrors at the laser facets. Additionally, a different strategy to create a buried current aperture is presented, which is based on ion implantation followed by epitaxial regrowth. This enables to improve device performance and simultaneously introduce non-absorbing mirrors at the facets with correspondingly increased reliability.
Author : E.H.C. Parker
Publisher : Newnes
ISBN 13 : 0444596437
Total Pages : 465 pages
Book Rating : 4.4/5 (445 download)
Download or read book Selected Topics in Group IV and II-VI Semiconductors written by E.H.C. Parker and published by Newnes. This book was released on 2012-12-02 with total page 465 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the proceedings of two symposia which brought together crystal growers, chemists and physicists from across the world. The first part is concerned with silicon molecular beam epitaxy and presents an overview of the most research being done in the field. Part two discusses the problems dealing with purification, doping and defects of II-VI materials, mainly of the important semiconductors CdTe and ZnSe. The focus is on materials science issues which are the key for a better understanding of these materials and for any industrial application.
Author : M. Lannoo
Publisher : Springer Science & Business Media
ISBN 13 : 364281574X
Total Pages : 283 pages
Book Rating : 4.6/5 (428 download)
Download or read book Point Defects in Semiconductors I written by M. Lannoo and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 283 pages. Available in PDF, EPUB and Kindle. Book excerpt: From its early beginning before the war, the field of semiconductors has developped as a classical example where the standard approximations of 'band theory' can be safely used to study its interesting electronic properties. Thus in these covalent crystals, the electronic structure is only weakly coupled with the atomic vibrations; one-electron Bloch functions can be used and their energy bands can be accurately computed in the neighborhood of the energy gap between the valence and conduction bands; nand p doping can be obtained by introducing substitutional impurities which only introduce shallow donors and acceptors and can be studied by an effective-mass weak-scattering description. Yet, even at the beginning, it was known from luminescence studies that these simple concepts failed to describe the various 'deep levels' introduced near the middle of the energy gap by strong localized imperfections. These imperfections not only include some interstitial and many substitutional atoms, but also 'broken bonds' associated with surfaces and interfaces, dis location cores and 'vacancies', i.e., vacant iattice sites in the crystal. In all these cases, the electronic structure can be strongly correlated with the details of the atomic structure and the atomic motion. Because these 'deep levels' are strongly localised, electron-electron correlations can also playa significant role, and any weak perturbation treatment from the perfect crystal structure obviously fails. Thus, approximate 'strong coupling' techniques must often be used, in line' with a more chemical de scription of bonding.
