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Oxygen In Silicon
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Download or read book Oxygen in Silicon written by and published by Academic Press. This book was released on 1994-08-15 with total page 711 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume reviews the latest understanding of the behavior and roles of oxygen in silicon, which will carry the field into the ULSI era from the experimental and theoretical points of view. The fourteen chapters, written by recognized authorities representing industrial and academic institutions, cover thoroughly the oxygen related phenomena from the crystal growth to device fabrication processes, as well as indispensable diagnostic techniques for oxygen. Comprehensive study of the behavior of oxygen in silicon Discusses silicon crystals for VLSI and ULSI applications Thorough coverage from crystal growth to device fabrication Edited by technical experts in the field Written by recognized authorities from industrial and academic institutions Useful to graduate students, scientists in other disciplines, and active participants in the arena of silicon-based microelectronics research 297 original line drawings
Book Synopsis Early Stages of Oxygen Precipitation in Silicon by : R. Jones
Download or read book Early Stages of Oxygen Precipitation in Silicon written by R. Jones and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 535 pages. Available in PDF, EPUB and Kindle. Book excerpt: It was fOlllld as long ago as 1954 that heating oxygen rich silicon to around 450°C produced electrical active defects - the so called thermal donors. The inference was that the donors were created by some defect produced by the aggregation of oxygen. Since then, there has been an enor mous amount of work carried out to elucidate the detailed mechanism by which they, and other defects, are generated. This task has been made all the more relevant as silicon is one of the most important technological ma terials in everyday use and oxygen is its most common impurity. However, even after forty years, the details of the processes by which the donors and other defects are generated are still obscure. The difficulty of the problem is made more apparent when it is realised that there is only one oxygen atom in about ten thousand silicon atoms and so it is difficult to devise experiments to 'see' what happens during the early stages of oxygen precipitation when complexes of two, three or four 0xygen atoms are formed. However, new important new findings have emerged from experiments such as the careful monitoring of the changes in the infra red lattice absorption spectra over long durations, the observation of the growth of new bands which are correlated with electronic infra-red data, and high resolution ENDOR studies. In addition, progress has been made in the improved control of samples containing oxygen, carbon, nitrogen and hydrogen.
Book Synopsis Defects and Impurities in Silicon Materials by : Yutaka Yoshida
Download or read book Defects and Impurities in Silicon Materials written by Yutaka Yoshida and published by Springer. This book was released on 2016-03-30 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.
Download or read book Oxygen-17 and Silicon-29 written by and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Although it was shown very early [1] that the isotope 29Si is very valuable for NMR research, severe technical difficulties had to be overcome before silicon spectra could be recorded. This was due to the low sensitivity of the isotope resulting from its low gyro magnetic ratio, its low abundance and the rather long relaxation times. The introduction of the Fourier-Transform-Technique (FT-NMR) helped to surmount most of these problems, with the result, that more and more papers concerning silicon NMR appear. Thus, it seems now that most of the salient features of 29Si-NMR are known today. Some resume of the state of the art of 29Si_NMR have been reported [1-4]. Although the theory of 29Si-NMR is not yet understood beyond the basic features, it promises to be of value mainly for two reasons: 1. Silicon is strategically located in the Periodic Table of the elements between the elements carbon, aluminum and phosphorus. For an unified theory of chemical shifts and coupling constants of the heavier elements silicon NMR values will be important. 2. The normal coordination number of silicon is four. If the current view of the chemical shifts of the heavier elements is correct, then the paramagnetic part is dominant for the measured shift data. Two of the parameters used for the calcu lation of the paramagnetic part are bond orders and angles. Bond angles are rare ly determined experimentally with high precision.
Book Synopsis Tailor-Made Silicon-Oxygen Compounds by : Robert Corriu
Download or read book Tailor-Made Silicon-Oxygen Compounds written by Robert Corriu and published by Springer. This book was released on 1996 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt: The title "Tailor-Made Silicon-Oxygen Compounds - From Molecules to Materials" was the topic of a workshop at the Centre of Interdisciplinary Research (ZiF) in Bielefeld, organized by the editors of the monograph. The field of SiO compounds is actually very exciting and rapidly developing. About 25 leading scientists from different areas (molecular chemistry, solid-state chemistry, material science, physical and theoretical chemistry) present newest results and scientific perspectives within the following subdisciplines: Fundamental SiO-systems; siloxenes; silicon monoxide; functionalized siloxanes; silicate assembly; siloxane assembly. Der Titel "Tailor-Made Silicon-Oxygen Compounds - From Molecules to Materials" ist das Thema eines Workshops, der am Zentrum für interdisziplinäre Forschung (ZiF) in Bielefeld stattfand und von den Herausgebern des Buch organisiert wurde. Die Forschung auf dem Gebiet der Silicium-Sauerstoff-Verbindungen ist äußerst aktuell und entwickelt sich rasant. Etwa 25 Wissenschaftler aus verschiedenen Bereichen (Molekülchemie, Festkörperchemie, Materialwissenschaften, Physikalische und Theoretische Chemie) präsentieren neueste Ergebnisse und wissenschaftliche Perspektiven auf den folgenden Teilgebieten: Si-O-Basissysteme, Siloxen, Siliciummonoxid, funktionalisierte Siloxane, komplexe Silikat-Strukturen, komplexe Siloxan-Strukturen
Book Synopsis Early Stages of Oxygen Precipitation in Silicon by : R. Jones
Download or read book Early Stages of Oxygen Precipitation in Silicon written by R. Jones and published by . This book was released on 2014-01-15 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Determination of Oxygen Concentration in Silicon and Germanium by Infrared Absorption by : W. Robert Thurber
Download or read book Determination of Oxygen Concentration in Silicon and Germanium by Infrared Absorption written by W. Robert Thurber and published by . This book was released on 1970 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt: Infrared absorption measurements were made at room temperature, 80 K, and 20 K to determine the absorption coefficient of oxygen in silicon and germanium single crystals. A study was done to compare the results of four experimental methods, which involved both absolute and difference procedures.Sources of error were identified, including that due to calculating the absorption coefficient with an approximate equation which neglects multiple internal reflections.Measurements made on the same specimen at several temperatures give additional data on the relation of oxygen concentration to absorption coefficient at low temperatures.(Author).
Download or read book Oxygen-17 and Silicon-29 written by and published by Springer. This book was released on 2014-03-12 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: Although it was shown very early [1] that the isotope 29Si is very valuable for NMR research, severe technical difficulties had to be overcome before silicon spectra could be recorded. This was due to the low sensitivity of the isotope resulting from its low gyro magnetic ratio, its low abundance and the rather long relaxation times. The introduction of the Fourier-Transform-Technique (FT-NMR) helped to surmount most of these problems, with the result, that more and more papers concerning silicon NMR appear. Thus, it seems now that most of the salient features of 29Si-NMR are known today. Some resume of the state of the art of 29Si_NMR have been reported [1-4]. Although the theory of 29Si-NMR is not yet understood beyond the basic features, it promises to be of value mainly for two reasons: 1. Silicon is strategically located in the Periodic Table of the elements between the elements carbon, aluminum and phosphorus. For an unified theory of chemical shifts and coupling constants of the heavier elements silicon NMR values will be important. 2. The normal coordination number of silicon is four. If the current view of the chemical shifts of the heavier elements is correct, then the paramagnetic part is dominant for the measured shift data. Two of the parameters used for the calcu lation of the paramagnetic part are bond orders and angles. Bond angles are rare ly determined experimentally with high precision.
Book Synopsis Handbook of Photovoltaic Silicon by : Deren Yang
Download or read book Handbook of Photovoltaic Silicon written by Deren Yang and published by Springer. This book was released on 2019-11-28 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The utilization of sun light is one of the hottest topics in sustainable energy research. To efficiently convert sun power into a reliable energy – electricity – for consumption and storage, silicon and its derivatives have been widely studied and applied in solar cell systems. This handbook covers the photovoltaics of silicon materials and devices, providing a comprehensive summary of the state of the art of photovoltaic silicon sciences and technologies. This work is divided into various areas including but not limited to fundamental principles, design methodologies, wafering techniques/fabrications, characterizations, applications, current research trends and challenges. It offers the most updated and self-explanatory reference to all levels of students and acts as a quick reference to the experts from the fields of chemistry, material science, physics, chemical engineering, electrical engineering, solar energy, etc..
Book Synopsis Electrochemistry of Silicon and Its Oxide by : Xiaoge Gregory Zhang
Download or read book Electrochemistry of Silicon and Its Oxide written by Xiaoge Gregory Zhang and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 510 pages. Available in PDF, EPUB and Kindle. Book excerpt: It may be argued that silicon, carbon, hydrogen, oxygen, and iron are among the most important elements on our planet, because of their involvement in geological, biol- ical, and technological processes and phenomena. All of these elements have been studied exhaustively, and voluminous material is available on their properties. Included in this material are numerous accounts of their electrochemical properties, ranging from reviews to extensive monographs to encyclopedic discourses. This is certainly true for C, H, O, and Fe, but it is true to a much lesser extent for Si, except for the specific topic of semiconductor electrochemistry. Indeed, given the importance of the elect- chemical processing of silicon and the use of silicon in electrochemical devices (e. g. , sensors and photoelectrochemical cells), the lack of a comprehensive account of the electrochemistry of silicon in aqueous solution at the fundamental level is surprising and somewhat troubling. It is troubling in the sense that the non-photoelectrochemistry of silicon seems “to have fallen through the cracks,” with the result that some of the electrochemical properties of this element are not as well known as might be warranted by its importance in a modern technological society. Dr. Zhang’s book, Electrochemical Properties of Silicon and Its Oxide, will go a long way toward addressing this shortcoming. As with his earlier book on the elect- chemistry of zinc, the present book provides a comprehensive account of the elect- chemistry of silicon in aqueous solution.
Book Synopsis The Physics and Technology of Amorphous SiO2 by : Roderick A.B. Devine
Download or read book The Physics and Technology of Amorphous SiO2 written by Roderick A.B. Devine and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: The contents of this volume represent most of the papers presented either orally or as posters at the international conference held in Les rd th Arcs, Savoie, from June 29 to July 3 1987. The declared objective of the conference was to bring together specialists working in various fields, both academic and applied, to examine the state of our under standing of the physics of amorphous sioz from the point of view of its structure, defects (both intrinsic and extrinsic), its ability to trans port current and to trap charges, its sensitivity to irradiation, etc. For this reason, the proceedings is divided, as was the conference schedule, into a number of sections starting from a rather academic viewpoint of the internal structure of idealized Si0 and progressing 2 towards subjects of increasing technological importance such as charge transport and trapping and breakdown in thin films. The proceedings terminates with a section on novel applications of amorphous SiOz and in particular, buried oxide layers formed by ion implantation. Although every effort was made at the conference to ensure that each presentation occured in its most obvious session, in editing the proceedings we have taken the liberty of changing the order where it seems that a paper was in fact more appropriate to an alternative section. In any event, because of the natural overlap of subjects, many papers could have been suitably placed in several different sections.
Book Synopsis Oxygen, Carbon, Hydrogen, and Nitrogen in Crystalline Silicon by : J. C. Mikkelsen
Download or read book Oxygen, Carbon, Hydrogen, and Nitrogen in Crystalline Silicon written by J. C. Mikkelsen and published by . This book was released on 1986 with total page 612 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Crystalline Silicon by : Sukumar Basu
Download or read book Crystalline Silicon written by Sukumar Basu and published by BoD – Books on Demand. This book was released on 2011-07-27 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt: The exciting world of crystalline silicon is the source of the spectacular advancement of discrete electronic devices and solar cells. The exploitation of ever changing properties of crystalline silicon with dimensional transformation may indicate more innovative silicon based technologies in near future. For example, the discovery of nanocrystalline silicon has largely overcome the obstacles of using silicon as optoelectronic material. The further research and development is necessary to find out the treasures hidden within this material. The book presents different forms of silicon material, their preparation and properties. The modern techniques to study the surface and interface defect states, dislocations, and so on, in different crystalline forms have been highlighted in this book. This book presents basic and applied aspects of different crystalline forms of silicon in wide range of information from materials to devices.
Book Synopsis Tailor-made Silicon-oxygen Compounds by : R. Corrin
Download or read book Tailor-made Silicon-oxygen Compounds written by R. Corrin and published by Springer. This book was released on 1996 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt: The title "Tailor-Made Silicon-Oxygen Compounds - From Molecules to Materials the topic of a workshop at the Centre of Interdisciplinary Research (ZiF) in Bielefeld, organized by the editors of the monograph. The field of SiO compounds is actually very exciting and rapidly developing. About 25 leading scientists from different areas (molecular chemistry, solid-state chemistry, material science, physical and theoretical chemistry) present newest results and scientific perspectives within the following subdisciplines: Fundamental SiO-systems; siloxenes; silicon monoxide; functionalized siloxanes; silicate assembly; siloxane assembly.
Book Synopsis Microscopy of Semiconducting Materials 1987, Proceedings of the Institute of Physics Conference, Oxford University, April 1987 by : Cullis
Download or read book Microscopy of Semiconducting Materials 1987, Proceedings of the Institute of Physics Conference, Oxford University, April 1987 written by Cullis and published by CRC Press. This book was released on 1987-10-01 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt: The various forms of microscopy and related microanalytical techniques are making unique contributions to semiconductor research and development that underpin many important areas of microelectronics technology. Microscopy of Semiconducting Materials 1987 highlights the progress that is being made in semiconductor microscopy, primarily in electron probe methods as well as in light optical and ion scattering techniques. The book covers the state of the art, with sections on high resolution microscopy, epitaxial layers, quantum wells and superlattices, bulk gallium arsenide and other compounds, properties of dislocations, device silicon and dielectric structures, silicides and contacts, device testing, x-ray techniques, microanalysis, and advanced scanning microscopy techniques. Contributed by numerous international experts, this volume will be an indispensable guide to recent developments in semiconductor microscopy for all those who work in the field of semiconducting materials and research development.
Book Synopsis Encyclopedia of Microfluidics and Nanofluidics by : Dongqing Li
Download or read book Encyclopedia of Microfluidics and Nanofluidics written by Dongqing Li and published by Springer Science & Business Media. This book was released on 2008-08-06 with total page 2242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Covering all aspects of transport phenomena on the nano- and micro-scale, this encyclopedia features over 750 entries in three alphabetically-arranged volumes including the most up-to-date research, insights, and applied techniques across all areas. Coverage includes electrical double-layers, optofluidics, DNC lab-on-a-chip, nanosensors, and more.
Book Synopsis The Chemistry of Silicon by : E. G. Rochow
Download or read book The Chemistry of Silicon written by E. G. Rochow and published by Elsevier. This book was released on 2013-10-22 with total page 159 pages. Available in PDF, EPUB and Kindle. Book excerpt: Pergamon Texts in Organic Chemistry, Volume 9: The Chemistry of Silicon presents information essential in understanding the chemical properties of silicon. The book first covers the fundamental aspects of silicon, such as its nuclear, physical, and chemical properties. The text also details the history of silicon, its occurrence and distribution, and applications. Next, the selection enumerates the compounds and complexes of silicon, along with organosilicon compounds. The text will be of great interest to chemists and chemical engineers. Other researchers working on research study involving silicon will also benefit from the book.
