Point Defects In Group Iv Semiconductors

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Point Defects in Group IV Semiconductors

Author : S. Pizzini
Publisher : Materials Research Forum LLC
ISBN 13 : 1945291230
Total Pages : 134 pages
Book Rating : 4.9/5 (452 download)

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Book Synopsis Point Defects in Group IV Semiconductors by : S. Pizzini

Download or read book Point Defects in Group IV Semiconductors written by S. Pizzini and published by Materials Research Forum LLC. This book was released on 2017-04-05 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt: A self-consistent model of point defects requires a reliable connection with the experimentally deduced structural, spectroscopic and thermodynamic properties of the defect centres, to allow their unambiguous identification. This book focuses on the properties of defects in group IV semiconductors and seeks to clarify whether full knowledge of their chemical nature can account for several problems encountered in practice. It is shown how difficult the fulfilment of self-consistency conditions can be, even today, after more than four decades of dedicated research work, especially in the case of compound semiconductors, such as SiC, but also in the apparently simple cases of silicon and germanium. The reason for this is that the available microscopic models do not yet account for defect interactions in real solids.

Charged Semiconductor Defects

Author : Edmund G. Seebauer
Publisher : Springer Science & Business Media
ISBN 13 : 1848820593
Total Pages : 304 pages
Book Rating : 4.8/5 (488 download)

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Book Synopsis Charged Semiconductor Defects by : Edmund G. Seebauer

Download or read book Charged Semiconductor Defects written by Edmund G. Seebauer and published by Springer Science & Business Media. This book was released on 2008-11-14 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.

Defects in Semiconductors

Author :
Publisher : Academic Press
ISBN 13 : 0128019409
Total Pages : 458 pages
Book Rating : 4.1/5 (28 download)

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Book Synopsis Defects in Semiconductors by :

Download or read book Defects in Semiconductors written by and published by Academic Press. This book was released on 2015-06-08 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. Expert contributors Reviews of the most important recent literature Clear illustrations A broad view, including examination of defects in different semiconductors

Defects and Diffusion in Semiconductors IV

Author : David J. Fisher
Publisher : Trans Tech Publications Ltd
ISBN 13 : 303570709X
Total Pages : 500 pages
Book Rating : 4.0/5 (357 download)

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Book Synopsis Defects and Diffusion in Semiconductors IV by : David J. Fisher

Download or read book Defects and Diffusion in Semiconductors IV written by David J. Fisher and published by Trans Tech Publications Ltd. This book was released on 2001-11-30 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt: This fourth volume in the series covering the latest results in the field includes abstracts of papers which appeared within the approximate period of mid-2000 to mid-2001. The scope of this coverage includes, in addition to traditional semiconductors, the increasingly important carbide, nitride and silicide semiconductors. Semiconducting oxides are not covered, as information on these can be found in the "Defects and Diffusion in Ceramics Retrospective" series. The increasing interest in ceramic-type semiconductors is again reflected by the invited papers, which include an extensive review of the particular problems involved in growing GaN films on sapphire substrates. Nevertheless, established semiconductors continue to spring surprises and to offer new problems and these are also addressed here by a number of further detailed reviews of work on Si, InP and InGaP. Finally, new results are to be found here concerning diffusive processes and defect behaviour in Ge, GeSi, InGaAs, Si and ZnSe. Altogether, these 8 long reviews, 9 research papers and 752 selected abstracts provide an invaluable and up-to-date insight into current and future trends in semiconductor theory, processing and applications.

Defects in Electronic Materials II: Volume 442

Author : Jürgen Michel
Publisher :
ISBN 13 :
Total Pages : 744 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Defects in Electronic Materials II: Volume 442 by : Jürgen Michel

Download or read book Defects in Electronic Materials II: Volume 442 written by Jürgen Michel and published by . This book was released on 1997-05-02 with total page 744 pages. Available in PDF, EPUB and Kindle. Book excerpt: The pervasive role of defects in determining the thermal, mechanical, electrical, optical and magnetic properties of materials is significant as is the knowledge and operation of generation and control of defects in electronic materials. Developing novel semiconductor materials, however, requires new insights into the role of defects to achieve new properties. New experimental techniques must be developed to study defects in small structures. Research groups come together in this book from MRS to provide a vivid picture of the current problems, progress and methods in defect studies in electronic materials. Topics include new techniques in defect studies; processing induced defects, plasma-induced point defects; processing induced defects -defects and gate-oxide integrity; point defects and reaction; point defects and interactions in Si; impurity diffusion and hydrogen in Si; dislocations in group IV semiconductors; point defects and defect interactions in SiGe; point defects in III-V compounds; compensation and structural defects in III-V compounds and layers and structures.

Point and Extended Defects in Group IV Semiconductors

Author : Thomas Andreas Georg Eberlein
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (142 download)

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Book Synopsis Point and Extended Defects in Group IV Semiconductors by : Thomas Andreas Georg Eberlein

Download or read book Point and Extended Defects in Group IV Semiconductors written by Thomas Andreas Georg Eberlein and published by . This book was released on 2004 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Point and Extended Defects in Semiconductors

Author : Giorgio Benedek
Publisher : Springer Science & Business Media
ISBN 13 : 1468457098
Total Pages : 286 pages
Book Rating : 4.4/5 (684 download)

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Book Synopsis Point and Extended Defects in Semiconductors by : Giorgio Benedek

Download or read book Point and Extended Defects in Semiconductors written by Giorgio Benedek and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: The systematic study of defects in semiconductors began in the early fifties. FrQm that time on many questions about the defect structure and properties have been an swered, but many others are still a matter of investigation and discussion. Moreover, during these years new problems arose in connection with the identification and char acterization of defects, their role in determining transport and optical properties of semiconductor materials and devices, as well as from the technology of the ever in creasing scale of integration. This book presents to the reader a view into both basic concepts of defect physics and recent developments of high resolution experimental techniques. The book does not aim at an exhaustive presentation of modern defect physics; rather it gathers a number of topics which represent the present-time research in this field. The volume collects the contributions to the Advanced Research Workshop "Point, Extended and Surface Defects in Semiconductors" held at the Ettore Majo rana Centre at Erice (Italy) from 2 to 7 November 1988, in the framework of the International School of Materials Science and Technology. The workshop has brought together scientists from thirteen countries. Most participants are currently working on defect problems in either silicon submicron technology or in quantum wells and superlattices, where point defects, dislocations, interfaces and surfaces are closely packed together.

Miniaturized Silicon Photodetectors

Author : Maurizio Casalino
Publisher : MDPI
ISBN 13 : 3036500448
Total Pages : 148 pages
Book Rating : 4.0/5 (365 download)

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Book Synopsis Miniaturized Silicon Photodetectors by : Maurizio Casalino

Download or read book Miniaturized Silicon Photodetectors written by Maurizio Casalino and published by MDPI. This book was released on 2021-01-15 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon (Si) technologies provide an excellent platform for the design of microsystems where photonic and microelectronic functionalities are monolithically integrated on the same substrate. In recent years, a variety of passive and active Si photonic devices have been developed, and among them, photodetectors have attracted particular interest from the scientific community. Si photodiodes are typically designed to operate at visible wavelengths, but, unfortunately, their employment in the infrared (IR) range is limited due to the neglectable Si absorption over 1100 nm, even though the use of germanium (Ge) grown on Si has historically allowed operations to be extended up to 1550 nm. In recent years, significant progress has been achieved both by improving the performance of Si-based photodetectors in the visible range and by extending their operation to infrared wavelengths. Near-infrared (NIR) SiGe photodetectors have been demonstrated to have a “zero change” CMOS process flow, while the investigation of new effects and structures has shown that an all-Si approach could be a viable option to construct devices comparable with Ge technology. In addition, the capability to integrate new emerging 2D and 3D materials with Si, together with the capability of manufacturing devices at the nanometric scale, has led to the development of new device families with unexpected performance. Accordingly, this Special Issue of Micromachines seeks to showcase research papers, short communications, and review articles that show the most recent advances in the field of silicon photodetectors and their respective applications.

Point Defects in Semiconductors I

Author : M. Lannoo
Publisher : Springer Science & Business Media
ISBN 13 : 364281574X
Total Pages : 283 pages
Book Rating : 4.6/5 (428 download)

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Book Synopsis Point Defects in Semiconductors I by : M. Lannoo

Download or read book Point Defects in Semiconductors I written by M. Lannoo and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 283 pages. Available in PDF, EPUB and Kindle. Book excerpt: From its early beginning before the war, the field of semiconductors has developped as a classical example where the standard approximations of 'band theory' can be safely used to study its interesting electronic properties. Thus in these covalent crystals, the electronic structure is only weakly coupled with the atomic vibrations; one-electron Bloch functions can be used and their energy bands can be accurately computed in the neighborhood of the energy gap between the valence and conduction bands; nand p doping can be obtained by introducing substitutional impurities which only introduce shallow donors and acceptors and can be studied by an effective-mass weak-scattering description. Yet, even at the beginning, it was known from luminescence studies that these simple concepts failed to describe the various 'deep levels' introduced near the middle of the energy gap by strong localized imperfections. These imperfections not only include some interstitial and many substitutional atoms, but also 'broken bonds' associated with surfaces and interfaces, dis location cores and 'vacancies', i.e., vacant iattice sites in the crystal. In all these cases, the electronic structure can be strongly correlated with the details of the atomic structure and the atomic motion. Because these 'deep levels' are strongly localised, electron-electron correlations can also playa significant role, and any weak perturbation treatment from the perfect crystal structure obviously fails. Thus, approximate 'strong coupling' techniques must often be used, in line' with a more chemical de scription of bonding.

Point Defects in Semiconductors: Theoretical aspects

Author : Michel Lannoo
Publisher : Springer
ISBN 13 :
Total Pages : 296 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Point Defects in Semiconductors: Theoretical aspects by : Michel Lannoo

Download or read book Point Defects in Semiconductors: Theoretical aspects written by Michel Lannoo and published by Springer. This book was released on 1981 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Point Defects in Semiconductors and Insulators

Author : Johann-Martin Spaeth
Publisher : Springer Science & Business Media
ISBN 13 : 9783540426950
Total Pages : 508 pages
Book Rating : 4.4/5 (269 download)

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Book Synopsis Point Defects in Semiconductors and Insulators by : Johann-Martin Spaeth

Download or read book Point Defects in Semiconductors and Insulators written by Johann-Martin Spaeth and published by Springer Science & Business Media. This book was released on 2003-01-22 with total page 508 pages. Available in PDF, EPUB and Kindle. Book excerpt: The precedent book with the title "Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy" ap peared about 10 years ago. Since then a very active development has oc curred both with respect to the experimental methods and the theoretical interpretation of the experimental results. It would therefore not have been sufficient to simply publish a second edition of the precedent book with cor rections and a few additions. Furthermore the application of the multiple magnetic resonance methods has more and more shifted towards materials science and represents one of the important methods of materials analysis. Multiple magnetic resonances are used less now for "fundamental" studies in solid state physics. Therefore a more "pedestrian" access to the meth ods is called for to help the materials scientist to use them or to appreciate results obtained by using these methods. We have kept the two introduc tory chapters on conventional electron paramagnetic resonance (EPR) of the precedent book which are the base for the multiple resonance methods. The chapter on optical detection of EPR (ODEPR) was supplemented by sections on the structural information one can get from "forbidden" transitions as well as on spatial correlations between defects in the so-called "cross relaxation spectroscopy". High-field ODEPR/ENDOR was also added. The chapter on stationary electron nuclear double resonance (ENDOR) was supplemented by the method of stochastic END OR developed a few years ago in Paderborn which is now also commercially available.

Chemistry of Semiconductors

Author : Sergio Pizzini
Publisher : Royal Society of Chemistry
ISBN 13 : 1839162120
Total Pages : 375 pages
Book Rating : 4.8/5 (391 download)

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Book Synopsis Chemistry of Semiconductors by : Sergio Pizzini

Download or read book Chemistry of Semiconductors written by Sergio Pizzini and published by Royal Society of Chemistry. This book was released on 2023-12-24 with total page 375 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Point Defects in Semiconductors

Author : Michel Lannoo
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (81 download)

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Book Synopsis Point Defects in Semiconductors by : Michel Lannoo

Download or read book Point Defects in Semiconductors written by Michel Lannoo and published by . This book was released on 1981 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Defects in Nanocrystals

Author : Sergio Pizzini
Publisher : CRC Press
ISBN 13 : 1000066150
Total Pages : 253 pages
Book Rating : 4.0/5 ( download)

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Book Synopsis Defects in Nanocrystals by : Sergio Pizzini

Download or read book Defects in Nanocrystals written by Sergio Pizzini and published by CRC Press. This book was released on 2020-05-11 with total page 253 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in Nanocrystals: Structural and Physico-Chemical Aspects discusses the nature of semiconductor systems and the effect of the size and shape on their thermodynamic and optoelectronic properties at the mesoscopic and nanoscopic levels. The nanostructures considered in this book are individual nanometric crystallites, nanocrystalline films, and nanowires of which the thermodynamic, structural, and optical properties are discussed in detail. The work: Outlines the influence of growth processes on their morphology and structure Describes the benefits of optical spectroscopies in the understanding of the role and nature of defects in nanostructured semiconductors Considers the limits of nanothermodynamics Details the critical role of interfaces in nanostructural behavior Covers the importance of embedding media in the physico-chemical properties of nanostructured semiconductors Explains the negligible role of core point defects vs. surface and interface defects Written for researchers, engineers, and those working in the physical and physicochemical sciences, this work comprehensively details the chemical, structural, and optical properties of semiconductor nanostructures for the development of more powerful and efficient devices.

Defects and Diffusion in Semiconductors XIV

Author : David J. Fisher
Publisher : Trans Tech Publications Ltd
ISBN 13 : 3038139866
Total Pages : 173 pages
Book Rating : 4.0/5 (381 download)

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Book Synopsis Defects and Diffusion in Semiconductors XIV by : David J. Fisher

Download or read book Defects and Diffusion in Semiconductors XIV written by David J. Fisher and published by Trans Tech Publications Ltd. This book was released on 2012-12-04 with total page 173 pages. Available in PDF, EPUB and Kindle. Book excerpt: This 14th volume in the series covers the latest results in the field of Defects and Diffusion in Semiconductor. The issue also includes some original papers: An Experimental Study of the Thermal Properties of Modified 9Cr-1Mo Steel; Physico-Mechanical Properties of Sintered Iron-Silica Sand Nanoparticle Composites: A Preliminary Study; Defect and Dislocation Density Parameters of 5251 Al Alloy Using Positron Annihilation Lifetime Technique; A Novel Computational Strategy to Enhance the Ability of Elaborate Search by Entire Swarm to Find the Best Solution in Optimization of AMCs; Synthesis and Characterization of Novel Nanoceramic Magnesium Ferrite Material Doped with Samarium and Dysprosium for Designing Microstrip Patch Antenna; ZnO Varistor Defective Gd and Pr Ions; Injecting CO2 and Pumping Out Saline Formation Water Simultaneously to Control Pressure Build-Up while Storing CO2 in Deep Saline Aquifers; Studying the Effect of Low ?-Radiation Doses on CR-39 Polymers Using Positron Annihilation Lifetime and Mechanical Properties.

Silicon, Germanium, and Their Alloys

Author : Gudrun Kissinger
Publisher : CRC Press
ISBN 13 : 1466586648
Total Pages : 436 pages
Book Rating : 4.4/5 (665 download)

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Book Synopsis Silicon, Germanium, and Their Alloys by : Gudrun Kissinger

Download or read book Silicon, Germanium, and Their Alloys written by Gudrun Kissinger and published by CRC Press. This book was released on 2014-12-09 with total page 436 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon–germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium nanocrystals. World-recognized experts are the authors of the book’s chapters, which span bulk, thin film, and nanostructured materials growth and characterization problems, theoretical modeling, crystal defects, diffusion, and issues of key applicative value, including chemical etching as a defect delineation technique, the spectroscopic analysis of impurities, and the use of devices as tools for the measurement of materials quality.

Point Defects in Semiconductors II

Author : J. Bourgoin
Publisher : Springer Science & Business Media
ISBN 13 : 3642818323
Total Pages : 314 pages
Book Rating : 4.6/5 (428 download)

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Book Synopsis Point Defects in Semiconductors II by : J. Bourgoin

Download or read book Point Defects in Semiconductors II written by J. Bourgoin and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt: In introductory solid-state physics texts we are introduced to the concept of a perfect crystalline solid with every atom in its proper place. This is a convenient first step in developing the concept of electronic band struc ture, and from it deducing the general electronic and optical properties of crystalline solids. However, for the student who does not proceed further, such an idealization can be grossly misleading. A perfect crystal does not exist. There are always defects. It was recognized very early in the study of solids that these defects often have a profound effect on the real physical properties of a solid. As a result, a major part of scientific research in solid-state physics has,' from the early studies of "color centers" in alkali halides to the present vigorous investigations of deep levels in semiconductors, been devoted to the study of defects. We now know that in actual fact, most of the interest ing and important properties of solids-electrical, optical, mechanical- are determined not so much by the properties of the perfect crystal as by its im perfections.