New Approaches to Image Processing based Failure Analysis of Nano-Scale ULSI Devices

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Author :
Publisher : William Andrew
ISBN 13 : 0128000171
Total Pages : 110 pages
Book Rating : 4.1/5 (28 download)

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Book Synopsis New Approaches to Image Processing based Failure Analysis of Nano-Scale ULSI Devices by : Zeev Zalevsky

Download or read book New Approaches to Image Processing based Failure Analysis of Nano-Scale ULSI Devices written by Zeev Zalevsky and published by William Andrew. This book was released on 2013-11-13 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt: New Approaches to Image Processing Based Failure Analysis of Nano-Scale ULSI Devices introduces the reader to transmission and scanning microscope image processing for metal and non-metallic microstructures. Engineers and scientists face the pressing problem in ULSI development and quality assurance: microscopy methods can't keep pace with the continuous shrinking of feature size in microelectronics. Nanometer scale sizes are below the resolution of light, and imaging these features is nearly impossible even with electron microscopes, due to image noise. This book presents novel "smart" image processing methods, applications, and case studies concerning quality improvement of microscope images of microelectronic chips and process optimization. It explains an approach for high-resolution imaging of advanced metallization for micro- and nanoelectronics. This approach obviates the time-consuming preparation and selection of microscope measurement and sample conditions, enabling not only better electron-microscopic resolution, but also more efficient testing and quality control. This in turn leads to productivity gains in design and development of nano-scale ULSI chips. The authors also present several approaches for super-resolving low-resolution images to improve failure analysis of microelectronic chips. - Acquaints users with new software-based approaches to enhance high-resolution microscope imaging of microchip structures - Demonstrates how these methods lead to productivity gains in the development of ULSI chips - Presents several techniques for the superresolution of images, enabling engineers and scientists to improve their results in failure analysis of microelectronic chips

Handbook of Silicon Based MEMS Materials and Technologies

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Author :
Publisher : William Andrew
ISBN 13 : 0323312233
Total Pages : 827 pages
Book Rating : 4.3/5 (233 download)

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Book Synopsis Handbook of Silicon Based MEMS Materials and Technologies by : Markku Tilli

Download or read book Handbook of Silicon Based MEMS Materials and Technologies written by Markku Tilli and published by William Andrew. This book was released on 2015-09-02 with total page 827 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Handbook of Silicon Based MEMS Materials and Technologies, Second Edition, is a comprehensive guide to MEMS materials, technologies, and manufacturing that examines the state-of-the-art with a particular emphasis on silicon as the most important starting material used in MEMS. The book explains the fundamentals, properties (mechanical, electrostatic, optical, etc.), materials selection, preparation, manufacturing, processing, system integration, measurement, and materials characterization techniques, sensors, and multi-scale modeling methods of MEMS structures, silicon crystals, and wafers, also covering micromachining technologies in MEMS and encapsulation of MEMS components. Furthermore, it provides vital packaging technologies and process knowledge for silicon direct bonding, anodic bonding, glass frit bonding, and related techniques, shows how to protect devices from the environment, and provides tactics to decrease package size for a dramatic reduction in costs. - Provides vital packaging technologies and process knowledge for silicon direct bonding, anodic bonding, glass frit bonding, and related techniques - Shows how to protect devices from the environment and decrease package size for a dramatic reduction in packaging costs - Discusses properties, preparation, and growth of silicon crystals and wafers - Explains the many properties (mechanical, electrostatic, optical, etc.), manufacturing, processing, measuring (including focused beam techniques), and multiscale modeling methods of MEMS structures - Geared towards practical applications rather than theory

Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications

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Publisher : Springer Science & Business Media
ISBN 13 : 0387958681
Total Pages : 545 pages
Book Rating : 4.3/5 (879 download)

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Book Synopsis Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications by : Yosi Shacham-Diamand

Download or read book Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications written by Yosi Shacham-Diamand and published by Springer Science & Business Media. This book was released on 2009-09-19 with total page 545 pages. Available in PDF, EPUB and Kindle. Book excerpt: In Advanced ULSI interconnects – fundamentals and applications we bring a comprehensive description of copper-based interconnect technology for ultra-lar- scale integration (ULSI) technology for integrated circuit (IC) application. In- grated circuit technology is the base for all modern electronics systems. You can ?nd electronics systems today everywhere: from toys and home appliances to a- planes and space shuttles. Electronics systems form the hardware that together with software are the bases of the modern information society. The rapid growth and vast exploitation of modern electronics system create a strong demand for new and improved electronic circuits as demonstrated by the amazing progress in the ?eld of ULSI technology. This progress is well described by the famous “Moore’s law” which states, in its most general form, that all the metrics that describe integrated circuit performance (e. g. , speed, number of devices, chip area) improve expon- tially as a function of time. For example, the number of components per chip d- bles every 18 months and the critical dimension on a chip has shrunk by 50% every 2 years on average in the last 30 years. This rapid growth in integrated circuits te- nology results in highly complex integrated circuits with an increasing number of interconnects on chips and between the chip and its package. The complexity of the interconnect network on chips involves an increasing number of metal lines per interconnect level, more interconnect levels, and at the same time a reduction in the interconnect line critical dimensions.

International Aerospace Abstracts

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Publisher :
ISBN 13 :
Total Pages : 984 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis International Aerospace Abstracts by :

Download or read book International Aerospace Abstracts written by and published by . This book was released on 1998 with total page 984 pages. Available in PDF, EPUB and Kindle. Book excerpt:

JJAP Letters

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Publisher :
ISBN 13 :
Total Pages : 684 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis JJAP Letters by :

Download or read book JJAP Letters written by and published by . This book was released on 1998 with total page 684 pages. Available in PDF, EPUB and Kindle. Book excerpt:

JJAP

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Publisher :
ISBN 13 :
Total Pages : 932 pages
Book Rating : 4.X/5 (6 download)

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Book Synopsis JJAP by :

Download or read book JJAP written by and published by . This book was released on 1998 with total page 932 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Advanced Interconnects for ULSI Technology

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Publisher : John Wiley & Sons
ISBN 13 : 1119966868
Total Pages : 616 pages
Book Rating : 4.1/5 (199 download)

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Book Synopsis Advanced Interconnects for ULSI Technology by : Mikhail Baklanov

Download or read book Advanced Interconnects for ULSI Technology written by Mikhail Baklanov and published by John Wiley & Sons. This book was released on 2012-02-17 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt: Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.

Nanotechnology Research Directions: IWGN Workshop Report

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Publisher : Springer Science & Business Media
ISBN 13 : 9401595763
Total Pages : 367 pages
Book Rating : 4.4/5 (15 download)

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Book Synopsis Nanotechnology Research Directions: IWGN Workshop Report by : R.S. Williams

Download or read book Nanotechnology Research Directions: IWGN Workshop Report written by R.S. Williams and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 367 pages. Available in PDF, EPUB and Kindle. Book excerpt: energy production, environmental management, transportation, communication, computation, and education. As the twenty-first century unfolds, nanotechnology's impact on the health, wealth, and security of the world's people is expected to be at least as significant as the combined influences in this century of antibiotics, the integrated circuit, and human-made polymers. Dr. Neal Lane, Advisor to the President for Science and Technology and former National Science Foundation (NSF) director, stated at a Congressional hearing in April 1998, "If I were asked for an area of science and engineering that will most likely produce the breakthroughs of tomorrow, I would point to nanoscale science and engineering. " Recognizing this potential, the White House Office of Science and Technology Policy (OSTP) and the Office of Management and Budget (OMB) have issued a joint memorandum to Federal agency heads that identifies nanotechnology as a research priority area for Federal investment in fiscal year 2001. This report charts "Nanotechnology Research Directions," as developed by the Interagency W orking Group on Nano Science, Engineering, and Technology (IWGN) of the National Science and Technology Council (NSTC). The report incorporates the views of leading experts from government, academia, and the private sector. It reflects the consensus reached at an IWGN-sponsored workshop held on January 27-29, 1999, and detailed in contributions submitted thereafter by members of the V. S. science and engineering community. (See Appendix A for a list of contributors.

Microscopy and Analysis

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Publisher :
ISBN 13 :
Total Pages : 722 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Microscopy and Analysis by :

Download or read book Microscopy and Analysis written by and published by . This book was released on 2005 with total page 722 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Nanostructure Science and Technology

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Publisher : Springer Science & Business Media
ISBN 13 : 9780792358541
Total Pages : 378 pages
Book Rating : 4.3/5 (585 download)

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Book Synopsis Nanostructure Science and Technology by : Richard W. Siegel

Download or read book Nanostructure Science and Technology written by Richard W. Siegel and published by Springer Science & Business Media. This book was released on 1999-09-30 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: Timely information on scientific and engineering developments occurring in laboratories around the world provides critical input to maintaining the economic and technological strength of the United States. Moreover, sharing this information quickly with other countries can greatly enhance the productivity of scientists and engineers. These are some of the reasons why the National Science Foundation (NSF) has been involved in funding science and technology assessments comparing the United States and foreign countries since the early 1980s. A substantial number of these studies have been conducted by the World Technology Evaluation Center (WTEC) managed by Loyola College through a cooperative agreement with NSF. The National Science and Technology Council (NSTC), Committee on Technology's Interagency Working Group on NanoScience, Engineering and Technology (CT/IWGN) worked with WTEC to develop the scope of this Nanostucture Science and Technology report in an effort to develop a baseline of understanding for how to strategically make Federal nanoscale R&D investments in the coming years. The purpose of the NSTC/WTEC activity is to assess R&D efforts in other countries in specific areas of technology, to compare these efforts and their results to U. S. research in the same areas, and to identify opportunities for international collaboration in precompetitive research. Many U. S. organizations support substantial data gathering and analysis efforts focusing on nations such as Japan. But often the results of these studies are not widely available. At the same time, government and privately sponsored studies that are in the public domain tend to be "input" studies.

Physics Briefs

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Publisher :
ISBN 13 :
Total Pages : 1454 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Physics Briefs by :

Download or read book Physics Briefs written by and published by . This book was released on 1991 with total page 1454 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Atomic Layer Deposition for Semiconductors

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Publisher : Springer Science & Business Media
ISBN 13 : 146148054X
Total Pages : 266 pages
Book Rating : 4.4/5 (614 download)

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Book Synopsis Atomic Layer Deposition for Semiconductors by : Cheol Seong Hwang

Download or read book Atomic Layer Deposition for Semiconductors written by Cheol Seong Hwang and published by Springer Science & Business Media. This book was released on 2013-10-18 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.

Failure Analysis

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Publisher : John Wiley & Sons
ISBN 13 : 1119990009
Total Pages : 372 pages
Book Rating : 4.1/5 (199 download)

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Book Synopsis Failure Analysis by : Marius Bazu

Download or read book Failure Analysis written by Marius Bazu and published by John Wiley & Sons. This book was released on 2011-03-08 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Failure analysis is the preferred method to investigate product or process reliability and to ensure optimum performance of electrical components and systems. The physics-of-failure approach is the only internationally accepted solution for continuously improving the reliability of materials, devices and processes. The models have been developed from the physical and chemical phenomena that are responsible for degradation or failure of electronic components and materials and now replace popular distribution models for failure mechanisms such as Weibull or lognormal. Reliability engineers need practical orientation around the complex procedures involved in failure analysis. This guide acts as a tool for all advanced techniques, their benefits and vital aspects of their use in a reliability programme. Using twelve complex case studies, the authors explain why failure analysis should be used with electronic components, when implementation is appropriate and methods for its successful use. Inside you will find detailed coverage on: a synergistic approach to failure modes and mechanisms, along with reliability physics and the failure analysis of materials, emphasizing the vital importance of cooperation between a product development team involved the reasons why failure analysis is an important tool for improving yield and reliability by corrective actions the design stage, highlighting the ‘concurrent engineering' approach and DfR (Design for Reliability) failure analysis during fabrication, covering reliability monitoring, process monitors and package reliability reliability resting after fabrication, including reliability assessment at this stage and corrective actions a large variety of methods, such as electrical methods, thermal methods, optical methods, electron microscopy, mechanical methods, X-Ray methods, spectroscopic, acoustical, and laser methods new challenges in reliability testing, such as its use in microsystems and nanostructures This practical yet comprehensive reference is useful for manufacturers and engineers involved in the design, fabrication and testing of electronic components, devices, ICs and electronic systems, as well as for users of components in complex systems wanting to discover the roots of the reliability flaws for their products.

Science Abstracts

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Publisher :
ISBN 13 :
Total Pages : 1990 pages
Book Rating : 4.3/5 (243 download)

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Book Synopsis Science Abstracts by :

Download or read book Science Abstracts written by and published by . This book was released on 1995 with total page 1990 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Semiconductor Material and Device Characterization

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Publisher : John Wiley & Sons
ISBN 13 : 0471739065
Total Pages : 800 pages
Book Rating : 4.4/5 (717 download)

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Book Synopsis Semiconductor Material and Device Characterization by : Dieter K. Schroder

Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

Amorphous and Nano Alloys Electroless Depositions

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Publisher : Elsevier
ISBN 13 : 0128027061
Total Pages : 774 pages
Book Rating : 4.1/5 (28 download)

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Book Synopsis Amorphous and Nano Alloys Electroless Depositions by : Bangwei Zhang

Download or read book Amorphous and Nano Alloys Electroless Depositions written by Bangwei Zhang and published by Elsevier. This book was released on 2015-12-07 with total page 774 pages. Available in PDF, EPUB and Kindle. Book excerpt: Amorphous and Nano Alloys Electroless Depositions: Technology, Theory, Structure and Property describes the whole development and the most important subjects (technology, theory, structure and property) up to date of electroless plating (EP). The author concentrates on the fundamental scientific and academic problems (principle, mechanism and theory) in EP today.Based on the history of EP, this valuable reference describes lots of new EP processes, including electroless Fe based alloy system deposits, formation and theoretical description of electroless alloys, microscopic theory of electroless plating deposits, microscopic structures and surface morphology of electroless deposits, and weldability property of electroless deposits. - Focus on the fundamental scientific and academic problems (principles, mechanisms and theory) in electroless plating - The book gives a very good overview of the research and development in this field and each chapter is fully referenced - Detailed analysis and review of the current data, logically structured for ease of use

Transient Electronics

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Publisher : John Wiley & Sons
ISBN 13 : 0470852585
Total Pages : 288 pages
Book Rating : 4.4/5 (78 download)

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Book Synopsis Transient Electronics by : Paul W. Smith

Download or read book Transient Electronics written by Paul W. Smith and published by John Wiley & Sons. This book was released on 2011-09-23 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt: Passive Pulse Generators are circuits used to generate very high power electrical pulses. Such pulses find application in a wide range of disciplines, including plasma generation, gas laser physics and radar. * Includes two introductory chapters on techniques used to analyse passive pulse generators * Includes worked examples A valuable reference resource for specialist undergraduates, post graduate students and researchers active in the field og pulsed power and areas where pulsed power is applied, including physicists, engineers and those with an interest in waste and materials processing.