Handbook Of Silicon Carbide Materials And Devices

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Handbook of Silicon Carbide Materials and Devices

Author : Zhe Chuan Feng
Publisher :
ISBN 13 : 9781032383576
Total Pages : 0 pages
Book Rating : 4.3/5 (835 download)

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Book Synopsis Handbook of Silicon Carbide Materials and Devices by : Zhe Chuan Feng

Download or read book Handbook of Silicon Carbide Materials and Devices written by Zhe Chuan Feng and published by . This book was released on 2022-11 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: "This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homo-epitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs"--

Sic Materials And Devices - Volume 1

Author : Sergey Rumyantsev
Publisher : World Scientific
ISBN 13 : 981447777X
Total Pages : 342 pages
Book Rating : 4.8/5 (144 download)

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Book Synopsis Sic Materials And Devices - Volume 1 by : Sergey Rumyantsev

Download or read book Sic Materials And Devices - Volume 1 written by Sergey Rumyantsev and published by World Scientific. This book was released on 2006-07-25 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.

Handbook of Silicon Carbide Materials and Devices

Author : Zhe Chuan Feng
Publisher : CRC Press
ISBN 13 : 0429583958
Total Pages : 465 pages
Book Rating : 4.4/5 (295 download)

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Book Synopsis Handbook of Silicon Carbide Materials and Devices by : Zhe Chuan Feng

Download or read book Handbook of Silicon Carbide Materials and Devices written by Zhe Chuan Feng and published by CRC Press. This book was released on 2023-07-10 with total page 465 pages. Available in PDF, EPUB and Kindle. Book excerpt: This handbook presents the key properties of silicon carbide (SiC), the power semiconductor for the 21st century. It describes related technologies, reports the rapid developments and achievements in recent years, and discusses the remaining challenging issues in the field. The book consists of 15 chapters, beginning with a chapter by Professor W. J. Choyke, the leading authority in the field, and is divided into four sections. The topics include presolar SiC history, vapor-liquid-solid growth, spectroscopic investigations of 3C-SiC/Si, developments and challenges in the 21st century; CVD principles and techniques, homoepitaxy of 4H-SiC, cubic SiC grown on 4H-SiC, SiC thermal oxidation processes and MOS interface, Raman scattering, NIR luminescent studies, Mueller matrix ellipsometry, Raman microscopy and imaging, 4H-SiC UV photodiodes, radiation detectors, and short wavelength and synchrotron X-ray diffraction. This comprehensive work provides a strong contribution to the engineering, materials, and basic science knowledge of the 21st century, and will be of interest to material growers, designers, engineers, scientists, postgraduate students, and entrepreneurs.

Silicon Carbide

Author : Zhe Chuan Feng
Publisher :
ISBN 13 : 9780429209789
Total Pages : 389 pages
Book Rating : 4.2/5 (97 download)

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Book Synopsis Silicon Carbide by : Zhe Chuan Feng

Download or read book Silicon Carbide written by Zhe Chuan Feng and published by . This book was released on 2004 with total page 389 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon Carbide

Author : Chuan Feng Zhe
Publisher : CRC Press
ISBN 13 : 1591690234
Total Pages : 412 pages
Book Rating : 4.5/5 (916 download)

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Book Synopsis Silicon Carbide by : Chuan Feng Zhe

Download or read book Silicon Carbide written by Chuan Feng Zhe and published by CRC Press. This book was released on 2003-10-30 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book will provide useful information to material growers and evaluators, device design and processing engineers as well as potential users of SiC technologies. This book will help identify remaining challenging issues to stimulate further investigation to realize the full potential of wide band gap SiC for optoelectronic and microelectronic applications.

Fundamentals of Silicon Carbide Technology

Author : Tsunenobu Kimoto
Publisher : John Wiley & Sons
ISBN 13 : 1118313526
Total Pages : 565 pages
Book Rating : 4.1/5 (183 download)

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Book Synopsis Fundamentals of Silicon Carbide Technology by : Tsunenobu Kimoto

Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-11-24 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.

Silicon Carbide

Author : Chuan Feng Zhe
Publisher : CRC Press
ISBN 13 : 9781135434410
Total Pages : 416 pages
Book Rating : 4.4/5 (344 download)

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Book Synopsis Silicon Carbide by : Chuan Feng Zhe

Download or read book Silicon Carbide written by Chuan Feng Zhe and published by CRC Press. This book was released on 2003-10-30 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book will provide useful information to material growers and evaluators, device design and processing engineers as well as potential users of SiC technologies. This book will help identify remaining challenging issues to stimulate further investigation to realize the full potential of wide band gap SiC for optoelectronic and microelectronic applications.

Silicon Carbide 2006--materials, Processing and Devices

Author : Michael Dudley
Publisher :
ISBN 13 : 9781558998674
Total Pages : 496 pages
Book Rating : 4.9/5 (986 download)

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Book Synopsis Silicon Carbide 2006--materials, Processing and Devices by : Michael Dudley

Download or read book Silicon Carbide 2006--materials, Processing and Devices written by Michael Dudley and published by . This book was released on 2006 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon Carbide - Materials, Processing and Devices

Author : Feng Zhao
Publisher :
ISBN 13 : 9781510805521
Total Pages : 198 pages
Book Rating : 4.8/5 (55 download)

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Book Synopsis Silicon Carbide - Materials, Processing and Devices by : Feng Zhao

Download or read book Silicon Carbide - Materials, Processing and Devices written by Feng Zhao and published by . This book was released on 2014 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon Carbide

Author : Moumita Mukherjee
Publisher : IntechOpen
ISBN 13 : 9789533079684
Total Pages : 560 pages
Book Rating : 4.0/5 (796 download)

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Book Synopsis Silicon Carbide by : Moumita Mukherjee

Download or read book Silicon Carbide written by Moumita Mukherjee and published by IntechOpen. This book was released on 2011-10-10 with total page 560 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide (SiC) and its polytypes, used primarily for grinding and high temperature ceramics, have been a part of human civilization for a long time. The inherent ability of SiC devices to operate with higher efficiency and lower environmental footprint than silicon-based devices at high temperatures and under high voltages pushes SiC on the verge of becoming the material of choice for high power electronics and optoelectronics. What is more important, SiC is emerging to become a template for graphene fabrication, and a material for the next generation of sub-32nm semiconductor devices. It is thus increasingly clear that SiC electronic systems will dominate the new energy and transport technologies of the 21st century. In 21 chapters of the book, special emphasis has been placed on the materials aspects and developments thereof. To that end, about 70% of the book addresses the theory, crystal growth, defects, surface and interface properties, characterization, and processing issues pertaining to SiC. The remaining 30% of the book covers the electronic device aspects of this material. Overall, this book will be valuable as a reference for SiC researchers for a few years to come. This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. The primary target for the book includes students, researchers, material and chemical engineers, semiconductor manufacturers and professionals who are interested in silicon carbide and its continuing progression.

Radiation Effects in Silicon Carbide

Author : A.A. Lebedev
Publisher : Materials Research Forum LLC
ISBN 13 : 1945291117
Total Pages : 172 pages
Book Rating : 4.9/5 (452 download)

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Book Synopsis Radiation Effects in Silicon Carbide by : A.A. Lebedev

Download or read book Radiation Effects in Silicon Carbide written by A.A. Lebedev and published by Materials Research Forum LLC. This book was released on with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book reviews the most interesting research concerning the radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. The electrical parameters that make SiC a promising material for applications in modern electronics are discussed in detail. Specific features of the crystal structure of SiC are considered. It is shown that, when wide-bandgap semiconductors are studied, it is necessary to take into account the temperature dependence of the carrier removal rate, which is a standard parameter for determining the radiation hardness of semiconductors. The carrier removal rate values obtained by irradiation of various SiC polytypes with n- and p-type conductivity are analyzed in relation to the type and energy of the irradiating particles. The influence exerted by the energy of charged particles on how radiation defects are formed and conductivity is compensated in semiconductors under irradiation is analyzed. Furthermore, the possibility to produce controlled transformation of silicon carbide polytype is considered. The involvement of radiation defects in radiative and nonradiative recombination processes in SiC is analyzed. Data are also presented regarding the degradation of particular SiC electronic devices under the influence of radiation and a conclusion is made regarding the radiation resistance of SiC. Lastly, the radiation hardness of devices based on silicon and silicon carbide are compared.

Advances in Silicon Carbide Processing and Applications

Author : Stephen E. Saddow
Publisher : Artech House
ISBN 13 : 9781580537414
Total Pages : 236 pages
Book Rating : 4.5/5 (374 download)

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Book Synopsis Advances in Silicon Carbide Processing and Applications by : Stephen E. Saddow

Download or read book Advances in Silicon Carbide Processing and Applications written by Stephen E. Saddow and published by Artech House. This book was released on 2004 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt: Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices. Key issues in selective doping of SiC via ion implantation are covered with special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-control components, high-temperature gas sensors, and high-temperature electronics. By cutting through the arcane data and jargon surrounding the hype on SiC, this book gives an honest assessment of today's SiC technology and shows you how SiC can be adopted in developing tomorrow's applications.

Silicon-Based Material and Devices, Two-Volume Set

Author : Hari Singh Nalwa
Publisher : Academic Press
ISBN 13 : 0080541232
Total Pages : 646 pages
Book Rating : 4.0/5 (85 download)

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Book Synopsis Silicon-Based Material and Devices, Two-Volume Set by : Hari Singh Nalwa

Download or read book Silicon-Based Material and Devices, Two-Volume Set written by Hari Singh Nalwa and published by Academic Press. This book was released on 2001-06-13 with total page 646 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers a broad spectrum of the silicon-based materials and their device applications. This book provides a broad coverage of the silicon-based materials including different kinds of silicon-related materials, their processing, spectroscopic characterization, physical properties, and device applications. This two-volume set offers a selection of timely topics on silicon materials namely those that have been extensively used for applications in electronic and photonic technologies. The extensive reference provides broad coverage of silicon-based materials, including different types of silicon-related materials, their processing, spectroscopic characterization, physical properties, and device applications. Fourteen chapters review the state of the art research on silicon-based materials and their applications to devices. This reference contains a subset of articles published in AP's recently released Handbook of Advanced Electronic and Photonic Materials and Devices ( 2000, ISBN 012-5137451, ten volumes) by Dr. Hari Nalwa. This two-volume work strives to present a highly coherent coverage of silicon-based material uses in the vastly dynamic arena of silicon chip research and technology. Key Features * Covers silicon-based materials and devices * Include types of materials, their processing, fabrication, physical properties and device applications * Role of silicon-based materials in electronic and photonic technology * A very special topic presented in a timely manner and in a format

SiC Materials and Devices

Author : Michael Shur
Publisher : World Scientific
ISBN 13 : 9812706852
Total Pages : 143 pages
Book Rating : 4.8/5 (127 download)

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Book Synopsis SiC Materials and Devices by : Michael Shur

Download or read book SiC Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2007 with total page 143 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide is known to have been investigated since 1907 when Captain H J Round demonstrated yellow and blue emission by applying bias between a metal needle and an SiC crystal. The potential of using SiC in semiconductor electronics was already recognized half a century ago. Despite its well-known properties, it has taken a few decades to overcome the exceptional technological difficulties of getting silicon carbide material to reach device quality and travel the road from basic research to commercialization. This second of two volumes reviews four important additional areas: the growth of SiC substrates; the deep defects in different SiC polytypes, which after many years of research still define the properties of bulk SiC and the performance and reliability of SiC devices; recent work on SiC JFETs; and the complex and controversial issues important for bipolar devices. Recognized leaders in the field, the contributors to this volume provide up-to-date reviews of further state-of-the-art areas in SiC technology and materials and device research.

SiC Materials and Devices

Author : Michael Shur
Publisher : World Scientific
ISBN 13 : 9812773371
Total Pages : 342 pages
Book Rating : 4.8/5 (127 download)

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Book Synopsis SiC Materials and Devices by : Michael Shur

Download or read book SiC Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2006 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices OCo power switching Schottky diodes and high temperature MESFETs OCo are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology. Contents: SiC Material Properties (G Pensl et al.); SiC Homoepitaxy and Heteroepitaxy (A S Bakin); Ohmic Contacts to SiC (F Roccaforte et al.); Silicon Carbide Schottky Barrier Diode (J H Zhao et al.); High Power SiC PiN Rectifiers (R Singh); Silicon Carbide Diodes for Microwave Applications (K Vassilevski); SiC Thyristors (M E Levinshtein et al.); Silicon Carbide Static Induction Transistors (G C DeSalvo). Readership: Technologists, scientists, engineers and graduate students working on silicon carbide or other wide band gap materials and devices."

SiC Materials and Devices

Author :
Publisher : Academic Press
ISBN 13 : 9780080864501
Total Pages : 420 pages
Book Rating : 4.8/5 (645 download)

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Book Synopsis SiC Materials and Devices by :

Download or read book SiC Materials and Devices written by and published by Academic Press. This book was released on 1998-07-02 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.

SiC Power Materials

Author : Zhe Chuan Feng
Publisher : Springer Science & Business Media
ISBN 13 : 9783540206668
Total Pages : 480 pages
Book Rating : 4.2/5 (66 download)

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Book Synopsis SiC Power Materials by : Zhe Chuan Feng

Download or read book SiC Power Materials written by Zhe Chuan Feng and published by Springer Science & Business Media. This book was released on 2004-06-09 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the 1950s Shockley predicted that SiC would quickly replace Si as a result of its superior material properties. In many ways he was right and today there is an active industry based on SiC, with new achievements being reported every year. This book reviews the progress achieved in SiC research and development, particularly over the past 10 years. It presents the essential properties of 3C-, 6H- and 4H-SiC polytypes including structural, electrical, optical, surface and interface properties; describes existing key SiC devices and also the challenges in materials growth and device fabrication of the 21st century. Overall it provides an up-to-date reference book suitable for a broad audience of newcomers, graduate students and engineers in industrial R&D.