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Radiation Effects In Silicon Carbide
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Book Synopsis Radiation Effects in Silicon Carbide by : A.A. Lebedev
Download or read book Radiation Effects in Silicon Carbide written by A.A. Lebedev and published by Materials Research Forum LLC. This book was released on with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book reviews the most interesting research concerning the radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. The electrical parameters that make SiC a promising material for applications in modern electronics are discussed in detail. Specific features of the crystal structure of SiC are considered. It is shown that, when wide-bandgap semiconductors are studied, it is necessary to take into account the temperature dependence of the carrier removal rate, which is a standard parameter for determining the radiation hardness of semiconductors. The carrier removal rate values obtained by irradiation of various SiC polytypes with n- and p-type conductivity are analyzed in relation to the type and energy of the irradiating particles. The influence exerted by the energy of charged particles on how radiation defects are formed and conductivity is compensated in semiconductors under irradiation is analyzed. Furthermore, the possibility to produce controlled transformation of silicon carbide polytype is considered. The involvement of radiation defects in radiative and nonradiative recombination processes in SiC is analyzed. Data are also presented regarding the degradation of particular SiC electronic devices under the influence of radiation and a conclusion is made regarding the radiation resistance of SiC. Lastly, the radiation hardness of devices based on silicon and silicon carbide are compared.
Book Synopsis Reliability and Radiation Effects in Compound Semiconductors by :
Download or read book Reliability and Radiation Effects in Compound Semiconductors written by and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Effect of Irradiation on Siliconized-silicon Carbide Coatings for Graphite by : J. L. Jackson
Download or read book The Effect of Irradiation on Siliconized-silicon Carbide Coatings for Graphite written by J. L. Jackson and published by . This book was released on 1961 with total page 36 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Radiation Technology for Advanced Materials: by : Guozhong Wu
Download or read book Radiation Technology for Advanced Materials: written by Guozhong Wu and published by Academic Press. This book was released on 2018-11-26 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt: Radiation Technology for Advanced Materials presents a range of radiation technology applications for advanced materials. The book aims to bridge the gap between researchers and industry, describing current uses and future prospects. It describes the mature radiation processing technology used in preparing heat shrinkable materials and in wire and cable materials, giving commercial cases. In addition, the book illustrates future applications, including high-performance fibers, special self-lubricating materials, special ultra-fine powder materials, civil fibers, natural polymeric materials, battery separator membranes, special filtration materials and metallic nanomaterials. Chapters cover radiation technology in high-performance fiber and functional textiles, radiation crosslinking and typical applications, radiation crosslinking for polymer foaming material, radiation degradation and application, radiation emulsion polymerization, radiation effects of ionic liquids, radiation technology in advanced new materials, and future prospects. Presents a range of radiation technology applications and their application to advanced materials Covers the mature radiation processing technology used to prepare heat shrinkable materials and wire cable materials, describing real-world commercial applications Shows the promising application of radiation technology in preparing high-performance Si and carbon fibers Describes the radiation degradation/radiation effect used to prepare fine powder materials Discusses radiation modification and radiation grafting techniques used to synthesize materials, such as civil fibers, natural polymeric materials and others
Book Synopsis Physics and Technology of Silicon Carbide Devices by : George Gibbs
Download or read book Physics and Technology of Silicon Carbide Devices written by George Gibbs and published by . This book was released on 2016-10-01 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon (Si) is by far the most widely used semiconductor material for power devices. On the other hand, Si-based power devices are approaching their material limits, which has provoked a lot of efforts to find alternatives to Si-based power devices for better performance. With the rapid innovations and developments in the semiconductor industry, Silicon Carbide (SiC) power devices have progressed from immature prototypes in laboratories to a viable alternative to Si-based power devices in high-efficiency and high-power density applications. SiC devices have numerous persuasive advantages--high-breakdown voltage, high-operating electric field, high-operating temperature, high-switching frequency and low losses. Silicon Carbide (SiC) devices belong to the so-called wide band gap semiconductor group, which offers a number of attractive characteristics for high voltage power semiconductors when compared to commonly used silicon (Si). Recently, some SiC power devices, for example, Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effecttransistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. Physics and Technology of Silicon Carbide Devices abundantly describes recent technologies on manufacturing, processing, characterization, modeling, etc. for SiC devices.
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1975 with total page 744 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Radiation Effects in Advanced Semiconductor Materials and Devices by : C. Claeys
Download or read book Radiation Effects in Advanced Semiconductor Materials and Devices written by C. Claeys and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.
Book Synopsis Effects of Radiation on Materials by : H. R. Brager
Download or read book Effects of Radiation on Materials written by H. R. Brager and published by ASTM International. This book was released on 1982 with total page 786 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Radiation Effects by : Sandia Corporation
Download or read book Radiation Effects written by Sandia Corporation and published by . This book was released on 1959 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis ECCM-8 European Conference on Composite Materials by : I. Crivelli Visconti
Download or read book ECCM-8 European Conference on Composite Materials written by I. Crivelli Visconti and published by Woodhead Publishing. This book was released on 1998 with total page 736 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characterization of the Optical and Electrical Properties of Proton- Irradiated 4H-Silicon Carbide by : Heather C. Crockett
Download or read book Characterization of the Optical and Electrical Properties of Proton- Irradiated 4H-Silicon Carbide written by Heather C. Crockett and published by . This book was released on 2002-03-01 with total page 85 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial n-type 4H-silicon carbide (SiC) is irradiated with 2 MeV protons to evaluate the dislocation damage effects on the optical and electrical characteristics of the material. The optical properties of the material are investigated using temperature-dependant photoluminescence (PL) and the effects of proton irradiation on the electrical properties are evaluated using current- voltage measurements and constant-voltage deep level transient spectroscopy (CV- DLTS). Subsequent high-temperature thermal annealing and recovery of the irradiated material is investigated over the temperature range of 900-1500 deg C. Proton-induced irradiation damage is apparent in the 4H-SiC material, affecting both the optical and electrical characteristics of the devices. The radiative behavior of the nitrogen-related near band edge transitions is significantly reduced as a result of the irradiation with partial recovery observed after high-temperature thermal annealing at 1500 deg C. A deeper trapping complex (EC-ET 380 meV) is detected as a result of irradiation and shows signs of activation due to thermal annealing. Initial indications taken from I-V measurements of the Schottky diodes reveal that proton irradiation followed by thermal annealing at 900 deg C may, in fact, enhance the rectifying device characteristics. Increasing the anneal temperature (TA = 1300 deg C) causes the device to fail entirely. Further annealing of the irradiated 4H-SiC at 1500 deg C demonstrates recovery in the rectifying behavior of the material. Significant levels of deep level donor traps are observed, induced by irradiation in n-type material. Three detectable defect pairs emerge with energy levels ranging from 570-730 meV below the conduction band. The trap parameters were determined using curve-fitting algorithms.
Book Synopsis Radiation Effects in Semiconductors and Semiconductor Devices by : V. S. Vavilov
Download or read book Radiation Effects in Semiconductors and Semiconductor Devices written by V. S. Vavilov and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Radiation Effects on Semiconductor Devices by : Los Alamos Scientific Laboratory
Download or read book Radiation Effects on Semiconductor Devices written by Los Alamos Scientific Laboratory and published by . This book was released on 1961 with total page 80 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Physics and Technology of Silicon Carbide Devices by : Yasuto Hijikata
Download or read book Physics and Technology of Silicon Carbide Devices written by Yasuto Hijikata and published by BoD – Books on Demand. This book was released on 2012-10-16 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recently, some SiC power devices such as Schottky-barrier diodes (SBDs), metal-oxide-semiconductor field-effect-transistors (MOSFETs), junction FETs (JFETs), and their integrated modules have come onto the market. However, to stably supply them and reduce their cost, further improvements for material characterizations and those for device processing are still necessary. This book abundantly describes recent technologies on manufacturing, processing, characterization, modeling, and so on for SiC devices. In particular, for explanation of technologies, I was always careful to argue physics underlying the technologies as much as possible. If this book could be a little helpful to progress of SiC devices, it will be my unexpected happiness.
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1967 with total page 1370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1976 with total page 612 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Radiation Effects in Electronics by :
Download or read book Radiation Effects in Electronics written by and published by ASTM International. This book was released on 1965 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt:
