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Author : Kevin Scott Stevens
Publisher :
ISBN 13 :
Total Pages : 342 pages
Book Rating : 4.:/5 (451 download)
Download or read book Growth of Group III Nitrides by Plasma-assisted MBE written by Kevin Scott Stevens and published by . This book was released on 1998 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : 黃志豪
Publisher :
ISBN 13 :
Total Pages : 111 pages
Book Rating : 4.:/5 (896 download)
Download or read book The Study of Growth and Characterization of Group III Nitride Semiconductor by RF Plasma-assisted Molecular Beam Epitaxy written by 黃志豪 and published by . This book was released on 2004 with total page 111 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : 謝佳和
Publisher :
ISBN 13 :
Total Pages : 122 pages
Book Rating : 4.:/5 (727 download)
Download or read book Study of Growth and Characterization of Group III Nitride Semiconductor on Sapphire/LAO Substrate by RF Plasma-assisted Molecular Beam Epitaxy written by 謝佳和 and published by . This book was released on 2009 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Zhe Chuan Feng
Publisher : World Scientific
ISBN 13 : 1860946364
Total Pages : 442 pages
Book Rating : 4.8/5 (69 download)
Download or read book III-nitride written by Zhe Chuan Feng and published by World Scientific. This book was released on 2006 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride semiconductor materials - (Al, In, Ga)N are excellent wide band gap semiconductors. This book presents the various developments and achievements in the field. It is useful for engineers, scientists and students.
Author : Mohamed Henini
Publisher : Elsevier
ISBN 13 : 0128121378
Total Pages : 790 pages
Book Rating : 4.1/5 (281 download)
Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community
Author : Tom Kuech
Publisher : Elsevier
ISBN 13 : 0444633057
Total Pages : 1384 pages
Book Rating : 4.4/5 (446 download)
Download or read book Handbook of Crystal Growth written by Tom Kuech and published by Elsevier. This book was released on 2014-11-02 with total page 1384 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume IIIA Basic Techniques Handbook of Crystal Growth, Second Edition Volume IIIA (Basic Techniques), edited by chemical and biological engineering expert Thomas F. Kuech, presents the underpinning science and technology associated with epitaxial growth as well as highlighting many of the chief and burgeoning areas for epitaxial growth. Volume IIIA focuses on major growth techniques which are used both in the scientific investigation of crystal growth processes and commercial development of advanced epitaxial structures. Techniques based on vacuum deposition, vapor phase epitaxy, and liquid and solid phase epitaxy are presented along with new techniques for the development of three-dimensional nano-and micro-structures. Volume IIIB Materials, Processes, and Technology Handbook of Crystal Growth, Second Edition Volume IIIB (Materials, Processes, and Technology), edited by chemical and biological engineering expert Thomas F. Kuech, describes both specific techniques for epitaxial growth as well as an array of materials-specific growth processes. The volume begins by presenting variations on epitaxial growth process where the kinetic processes are used to develop new types of materials at low temperatures. Optical and physical characterizations of epitaxial films are discussed for both in situ and exit to characterization of epitaxial materials. The remainder of the volume presents both the epitaxial growth processes associated with key technology materials as well as unique structures such as monolayer and two dimensional materials. Volume IIIA Basic Techniques Provides an introduction to the chief epitaxial growth processes and the underpinning scientific concepts used to understand and develop new processes. Presents new techniques and technologies for the development of three-dimensional structures such as quantum dots, nano-wires, rods and patterned growth Introduces and utilizes basic concepts of thermodynamics, transport, and a wide cross-section of kinetic processes which form the atomic level text of growth process Volume IIIB Materials, Processes, and Technology Describes atomic level epitaxial deposition and other low temperature growth techniques Presents both the development of thermal and lattice mismatched streams as the techniques used to characterize the structural properties of these materials Presents in-depth discussion of the epitaxial growth techniques associated with silicone silicone-based materials, compound semiconductors, semiconducting nitrides, and refractory materials
Author : Rositsa Gergova
Publisher :
ISBN 13 :
Total Pages : 298 pages
Book Rating : 4.:/5 (17 download)
Download or read book Growth and Characterization of Group III-nitrides by Migration Enhanced Afterglow Epitaxy written by Rositsa Gergova and published by . This book was released on 2014 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt: "The work presented in this thesis investigates the growth and properties of group III- nitride semiconductors that were grown using the Migration Enhanced Afterglow Epitaxy (MEAglow) method. This work was to enhance the understanding of the MEAglow growth process towards the improvement of quality of the layers grown using this technique. The MEAglow technique applies the migration enhanced epitaxy method in a low pressure plasma-based CVD reactor, which has a potential of producing high quality epitaxial group III-nitride layers at relatively low growth temperatures on large deposition areas. The low temperature pulse growth in metal-rich regime, comprising the MME method was employed under growth pressures between 500 mTorr and 3000 mTorr. As the MME method up to this point has been used only for MBE systems, study of the impact of the growth pressure on the materials properties was necessary. In this work the pressure dependence was mapped to an existing surface phase diagram for MBE systems by calculating the number of nitrogen gas phase collisions and the metalorganic bombardment rate, for the specific to the prototype reactor parameters, to a first approximation. This was done in order to achieve an intermediate regime free of metal droplets for growth in metal-rich regime. High quality epitaxial InN layers were accomplished on extremely thin and smooth Ga2O3 buffer layers. These results indicate a potential for the application of Ga2O3 buffers in InN growth. The MEAglow InN layers were further optimized for growth on commercially available GaN buffer layers and excellent two-dimensional growth was achieved for layers grown under metal-rich conditions at 512 °C. Post-growth annealing studies were carried out for InN layers grown at temperatures below 400 °C to study the limiting processes of the removal of excess nitrogen, believed to be a dominant defect in InN films grown in plasma-based systems at very low temperatures. Variations in GaN stoichiometry under certain growth conditions and the effect of similar growth conditions on MEAglow grown InGaN were also examined. The growth of MEAglow InGaN samples on sapphire substrates was optimized to reduce the indium surface segregation and phase separation of the material."-- from abstract.
Author : Zhe Chuan Feng
Publisher : World Scientific
ISBN 13 : 1848162235
Total Pages : 477 pages
Book Rating : 4.8/5 (481 download)
Download or read book III-nitride Devices and Nanoengineering written by Zhe Chuan Feng and published by World Scientific. This book was released on 2008 with total page 477 pages. Available in PDF, EPUB and Kindle. Book excerpt: Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.
Author : Jianye Li
Publisher : Bentham Science Publishers
ISBN 13 : 1608050521
Total Pages : 186 pages
Book Rating : 4.6/5 (8 download)
Download or read book Advances in III-V Semiconductor Nanowires and Nanodevices written by Jianye Li and published by Bentham Science Publishers. This book was released on 2011-09-09 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Semiconductor nanowires exhibit novel electronic and optical properties due to their unique one-dimensional structure and quantum confinement effects. In particular, III-V semiconductor nanowires have been of great scientific and technological interest fo"
Author : Electrochemical Society. Electronics Division
Publisher : The Electrochemical Society
ISBN 13 : 9781566773690
Total Pages : 380 pages
Book Rating : 4.7/5 (736 download)
Download or read book State-of-the-Art Program on Compound Semiconductors XXXVI and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors II written by Electrochemical Society. Electronics Division and published by The Electrochemical Society. This book was released on 2002 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : James H. Edgar
Publisher : Institution of Electrical Engineers
ISBN 13 :
Total Pages : 328 pages
Book Rating : 4.3/5 (91 download)
Download or read book Properties of Group III Nitrides written by James H. Edgar and published by Institution of Electrical Engineers. This book was released on 1994 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: The group III nitrides are playing an increasingly important role in the development of commercially viable microelectronic and optoelectronic devices. This volume provides reviews and evaluations of the group, in addition to guidance on the current reference literature.
Author : Zhe Chuan Feng
Publisher : World Scientific
ISBN 13 : 1908979941
Total Pages : 442 pages
Book Rating : 4.9/5 (89 download)
Download or read book Iii-nitride Semiconductor Materials written by Zhe Chuan Feng and published by World Scientific. This book was released on 2006-03-20 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment.The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals./a
Author : Hadis Morkoç
Publisher : John Wiley & Sons
ISBN 13 : 3527628460
Total Pages : 1311 pages
Book Rating : 4.5/5 (276 download)
Download or read book Handbook of Nitride Semiconductors and Devices, Materials Properties, Physics and Growth written by Hadis Morkoç and published by John Wiley & Sons. This book was released on 2009-07-30 with total page 1311 pages. Available in PDF, EPUB and Kindle. Book excerpt: The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 1 deals with the properties and growth of GaN. The deposition methods considered are: hydride VPE, organometallic CVD, MBE, and liquid/high pressure growth. Additionally, extended defects and their electrical nature, point defects, and doping are reviewed.
Author : Hadis Morkoç
Publisher : Springer Science & Business Media
ISBN 13 : 3642585620
Total Pages : 511 pages
Book Rating : 4.6/5 (425 download)
Download or read book Nitride Semiconductors and Devices written by Hadis Morkoç and published by Springer Science & Business Media. This book was released on 2013-03-08 with total page 511 pages. Available in PDF, EPUB and Kindle. Book excerpt: This timely monograph addresses an important class of semiconductors and devices that constitute the underlying technology for blue lasers. It succinctly treats structural, electrical and optical properties of nitrides and the substrates on which they are deposited, band structures of nitrides, optical processes, deposition and fabrication technologies, light-emitting diodes, and lasers. It also includes many tables and figures detailing the properties and performance of nitride semiconductors and devices.
Author : Fabrizio Roccaforte
Publisher : John Wiley & Sons
ISBN 13 : 3527825258
Total Pages : 464 pages
Book Rating : 4.5/5 (278 download)
Download or read book Nitride Semiconductor Technology written by Fabrizio Roccaforte and published by John Wiley & Sons. This book was released on 2020-07-17 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book "Nitride Semiconductor Technology" provides an overview of nitride semiconductors and their uses in optoelectronics and power electronics devices. It explains the physical properties of those materials as well as their growth methods. Their applications in high electron mobility transistors, vertical power devices, LEDs, laser diodes, and vertical-cavity surface-emitting lasers are discussed in detail. The book further examines reliability issues in these materials and puts forward perspectives of integrating them with 2D materials for novel high-frequency and high-power devices. In summary, it covers nitride semiconductor technology from materials to devices and provides the basis for further research.
Author : Bernard Gil
Publisher :
ISBN 13 : 9780198509745
Total Pages : 494 pages
Book Rating : 4.5/5 (97 download)
Download or read book Low-dimensional Nitride Semiconductors written by Bernard Gil and published by . This book was released on 2002 with total page 494 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optoelectronics and electronics of the years to come are likely to change dramatically. Most of the outdoor lighting systems will be replaced by light-emitting diodes that operate in the whole visible part of the electromagnatic spectrum. Transistors operating at high frequency and with high power are under development and likely to hit the market very rapidly. Compact solid-state lasers that operate in the near-ultraviolet range are going to be utilized for such widely used applications as read-write tasks in printer and CD drives. Ultraviolet detectors will be used at a wide scale for many application, ranging from flame detectors to medical instruments. This book concerns itself with the questions why nitride semiconductors are so promising over such a wide range of applications, what the current issues are in the research laboratories, and what the prospects of new electronic devices are in the dawn of the twenty-first century.
Author :
Publisher : Academic Press
ISBN 13 : 012809723X
Total Pages : 490 pages
Book Rating : 4.1/5 (28 download)
Download or read book III-Nitride Semiconductor Optoelectronics written by and published by Academic Press. This book was released on 2017-01-05 with total page 490 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride Semiconductor Optoelectronics covers the latest breakthrough research and exciting developments in the field of III-nitride compound semiconductors. It includes important topics on the fundamentals of materials growth, characterization, and optoelectronic device applications of III-nitrides. Bulk, quantum well, quantum dot, and nanowire heterostructures are all thoroughly explored. Contains the latest breakthrough research in III-nitride optoelectronics Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization and the design and performance characterization of state-of-the-art optoelectronic devices Presents an in-depth discussion on III-nitride bulk, quantum well, quantum dot, and nanowire technologies
