FinFETs and Other Multi-Gate Transistors

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 038771751X
Total Pages : 350 pages
Book Rating : 4.3/5 (877 download)

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Book Synopsis FinFETs and Other Multi-Gate Transistors by : J.-P. Colinge

Download or read book FinFETs and Other Multi-Gate Transistors written by J.-P. Colinge and published by Springer Science & Business Media. This book was released on 2008 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.

FinFETs and Other Multi-Gate Transistors

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 0387717528
Total Pages : 340 pages
Book Rating : 4.3/5 (877 download)

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Book Synopsis FinFETs and Other Multi-Gate Transistors by : J.-P. Colinge

Download or read book FinFETs and Other Multi-Gate Transistors written by J.-P. Colinge and published by Springer Science & Business Media. This book was released on 2007-10-17 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.

Nanowire Transistors

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Author :
Publisher : Cambridge University Press
ISBN 13 : 1107052408
Total Pages : 269 pages
Book Rating : 4.1/5 (7 download)

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Book Synopsis Nanowire Transistors by : Jean-Pierre Colinge

Download or read book Nanowire Transistors written by Jean-Pierre Colinge and published by Cambridge University Press. This book was released on 2016-04-21 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: A self-contained and up-to-date account of the current developments in the physics and technology of nanowire semiconductor devices.

Multigate Transistors for High Frequency Applications

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Author :
Publisher : Springer Nature
ISBN 13 : 981990157X
Total Pages : 98 pages
Book Rating : 4.8/5 (199 download)

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Book Synopsis Multigate Transistors for High Frequency Applications by : K. Sivasankaran

Download or read book Multigate Transistors for High Frequency Applications written by K. Sivasankaran and published by Springer Nature. This book was released on 2023-03-27 with total page 98 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the evolution of multigate transistors, the design challenges of transistors for high-frequency applications, and the design and modeling of multigate transistors for high-frequency applications. The contents particularly focus on the cut-off frequency and maximum oscillation frequency of different multigate structures. RF stability modeling for multigate transistors is presented, which can help to understand the relation between the small-signal parameter and the physical parameter of the device for optimization. This is a useful reference to those in academia and industry.

FinFET Modeling for IC Simulation and Design

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Author :
Publisher : Academic Press
ISBN 13 : 0124200850
Total Pages : 304 pages
Book Rating : 4.1/5 (242 download)

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Book Synopsis FinFET Modeling for IC Simulation and Design by : Yogesh Singh Chauhan

Download or read book FinFET Modeling for IC Simulation and Design written by Yogesh Singh Chauhan and published by Academic Press. This book was released on 2015-03-17 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is the first to explain FinFET modeling for IC simulation and the industry standard – BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture, as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, providing a step-by-step approach for the efficient extraction of model parameters. With this book you will learn: Why you should use FinFET The physics and operation of FinFET Details of the FinFET standard model (BSIM-CMG) Parameter extraction in BSIM-CMG FinFET circuit design and simulation Authored by the lead inventor and developer of FinFET, and developers of the BSIM-CM standard model, providing an experts’ insight into the specifications of the standard The first book on the industry-standard FinFET model - BSIM-CMG

Fundamentals of Ultra-Thin-Body MOSFETs and FinFETs

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Author :
Publisher : Cambridge University Press
ISBN 13 : 1107434491
Total Pages : 227 pages
Book Rating : 4.1/5 (74 download)

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Book Synopsis Fundamentals of Ultra-Thin-Body MOSFETs and FinFETs by : Jerry G. Fossum

Download or read book Fundamentals of Ultra-Thin-Body MOSFETs and FinFETs written by Jerry G. Fossum and published by Cambridge University Press. This book was released on 2013-08-29 with total page 227 pages. Available in PDF, EPUB and Kindle. Book excerpt: Understand the theory, design and applications of the two principal candidates for the next mainstream semiconductor-industry device with this concise and clear guide to FD/UTB transistors. • Describes FD/SOI MOSFETs and 3-D FinFETs in detail • Covers short-channel effects, quantum-mechanical effects, applications of UTB devices to floating-body DRAM and conventional SRAM • Provides design criteria for nanoscale FinFET and nanoscale thin- and thick-BOX planar FD/SOI MOSFET to help reduce technology development time • Projects potential nanoscale UTB CMOS performances • Contains end-of-chapter exercises. For professional engineers in the CMOS IC field who need to know about optimal non-classical device design and integration, this is a must-have resource.

Power Management in Mobile Devices

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Author :
Publisher : Elsevier
ISBN 13 : 9780080556406
Total Pages : 336 pages
Book Rating : 4.5/5 (564 download)

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Book Synopsis Power Management in Mobile Devices by : Findlay Shearer

Download or read book Power Management in Mobile Devices written by Findlay Shearer and published by Elsevier. This book was released on 2011-04-01 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: Sealed Lead Acid...Nickel Cadmium...Lithium Ion... How do you balance battery life with performance and cost? This book shows you how! Now that "mobile" has become the standard, the consumer not only expects mobility but demands power longevity in wireless devices. As more and more features, computing power, and memory are packed into mobile devices such as iPods, cell phones, and cameras, there is a large and growing gap between what devices can do and the amount of energy engineers can deliver. In fact, the main limiting factor in many portable designs is not hardware or software, but instead how much power can be delivered to the device. This book describes various design approaches to reduce the amount of power a circuit consumes and techniques to effectively manage the available power. Power Management Advice On: •Low Power Packaging Techniques •Power and Clock Gating •Energy Efficient Compilers •Various Display Technologies •Linear vs. Switched Regulators •Software Techniques and Intelligent Algorithms * Addresses power versus performance that each newly developed mobile device faces * Robust case studies drawn from the author's 30 plus years of extensive real world experience are included * Both hardware and software are discussed concerning their roles in power

Nanowire Field-Effect Transistor (FET).

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Author :
Publisher :
ISBN 13 : 9783039362097
Total Pages : 96 pages
Book Rating : 4.3/5 (62 download)

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Book Synopsis Nanowire Field-Effect Transistor (FET). by : Antonio García-Loureiro

Download or read book Nanowire Field-Effect Transistor (FET). written by Antonio García-Loureiro and published by . This book was released on 2021 with total page 96 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the last few years, the leading semiconductor industries have introduced multi-gate non-planar transistors into their core business. These are being applied in memories and in logical integrated circuits to achieve better integration on the chip, increased performance, and reduced energy consumption. Intense research is underway to develop these devices further and to address their limitations, in order to continue transistor scaling while further improving performance. This Special Issue looks at recent developments in the field of nanowire field-effect transistors (NW-FETs), covering different aspects of the technology, physics, and modelling of these nanoscale devices.

Lectures on String Theory

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Author :
Publisher : Springer
ISBN 13 :
Total Pages : 364 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Lectures on String Theory by : Dieter Lüst

Download or read book Lectures on String Theory written by Dieter Lüst and published by Springer. This book was released on 1989-11-08 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a self-contained introduction to string theory, at present one of the most exciting and fastest-growing areas in theoretical high-energy physics. Pedagogical in character, it introduces modern techniques and concepts, such as conformal and superconformal field theory, Kac-Moody algebras, etc., stressing their relevance and application to string theory rather than the formal aspects. The reader is led from a basic discussion of the classical bosonic string to the construction of four-dimensional heterotic string models, an area of current research. The so-called covariant lattice construction is discussed in detail. Being conceptually very simple, the book serves to exemplify the relevant features of other methods of arriving at four-dimensional string theories. It is also shown how one derives a low-energy field theory from string theory, thereby making contact with conventional point-particle physics.

FinFETs and Other Multi-Gate Transistors

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Author :
Publisher : Springer
ISBN 13 : 9780387518824
Total Pages : 0 pages
Book Rating : 4.5/5 (188 download)

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Book Synopsis FinFETs and Other Multi-Gate Transistors by : J.-P. Colinge

Download or read book FinFETs and Other Multi-Gate Transistors written by J.-P. Colinge and published by Springer. This book was released on 2008-11-01 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.

Planar Double-Gate Transistor

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Author :
Publisher : Springer Science & Business Media
ISBN 13 : 1402093411
Total Pages : 215 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Planar Double-Gate Transistor by : Amara Amara

Download or read book Planar Double-Gate Transistor written by Amara Amara and published by Springer Science & Business Media. This book was released on 2009-01-16 with total page 215 pages. Available in PDF, EPUB and Kindle. Book excerpt: Until the 1990s, the reduction of the minimum feature sizes used to fabricate in- grated circuits, called “scaling”, has highlighted serious advantages as integration density, speed, power consumption, functionality and cost. Direct consequence was the decrease of cost-per-function, so the electronic productivity has largely progressed in this period. Another usually cited trend is the evolution of the in- gration density as expressed by the well-know Moore’s Law in 1975: the number of devices per chip doubles every 2 years. This evolution has allowed improving signi?cantly the circuit complexity, offering a great computing power in the case of microprocessor, for example. However, since few years, signi?cant issues appeared such as the increase of the circuit heating, device complexity, variability and dif?culties to improve the integration density. These new trends generate an important growth in development and production costs. Though is it, since 40 years, the evolution of the microelectronics always f- lowed the Moore’s law and each dif?culty has found a solution.

Nano-CMOS Circuit and Physical Design

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Author :
Publisher : John Wiley & Sons
ISBN 13 : 0471678864
Total Pages : 413 pages
Book Rating : 4.4/5 (716 download)

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Book Synopsis Nano-CMOS Circuit and Physical Design by : Ban Wong

Download or read book Nano-CMOS Circuit and Physical Design written by Ban Wong and published by John Wiley & Sons. This book was released on 2005-04-08 with total page 413 pages. Available in PDF, EPUB and Kindle. Book excerpt: Based on the authors' expansive collection of notes taken over the years, Nano-CMOS Circuit and Physical Design bridges the gap between physical and circuit design and fabrication processing, manufacturability, and yield. This innovative book covers: process technology, including sub-wavelength optical lithography; impact of process scaling on circuit and physical implementation and low power with leaky transistors; and DFM, yield, and the impact of physical implementation.

Silicon-On-Insulator (SOI) Technology

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Author :
Publisher : Elsevier
ISBN 13 : 0857099256
Total Pages : 496 pages
Book Rating : 4.8/5 (57 download)

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Book Synopsis Silicon-On-Insulator (SOI) Technology by : O. Kononchuk

Download or read book Silicon-On-Insulator (SOI) Technology written by O. Kononchuk and published by Elsevier. This book was released on 2014-06-19 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-On-Insulator (SOI) Technology: Manufacture and Applications covers SOI transistors and circuits, manufacture, and reliability. The book also looks at applications such as memory, power devices, and photonics. The book is divided into two parts; part one covers SOI materials and manufacture, while part two covers SOI devices and applications. The book begins with chapters that introduce techniques for manufacturing SOI wafer technology, the electrical properties of advanced SOI materials, and modeling short-channel SOI semiconductor transistors. Both partially depleted and fully depleted SOI technologies are considered. Chapters 6 and 7 concern junctionless and fin-on-oxide field effect transistors. The challenges of variability and electrostatic discharge in CMOS devices are also addressed. Part two covers recent and established technologies. These include SOI transistors for radio frequency applications, SOI CMOS circuits for ultralow-power applications, and improving device performance by using 3D integration of SOI integrated circuits. Finally, chapters 13 and 14 consider SOI technology for photonic integrated circuits and for micro-electromechanical systems and nano-electromechanical sensors. The extensive coverage provided by Silicon-On-Insulator (SOI) Technology makes the book a central resource for those working in the semiconductor industry, for circuit design engineers, and for academics. It is also important for electrical engineers in the automotive and consumer electronics sectors. Covers SOI transistors and circuits, as well as manufacturing processes and reliability Looks at applications such as memory, power devices, and photonics

Industry Standard FDSOI Compact Model BSIM-IMG for IC Design

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Author :
Publisher : Woodhead Publishing
ISBN 13 : 9780081024010
Total Pages : 0 pages
Book Rating : 4.0/5 (24 download)

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Book Synopsis Industry Standard FDSOI Compact Model BSIM-IMG for IC Design by : Chenming Hu

Download or read book Industry Standard FDSOI Compact Model BSIM-IMG for IC Design written by Chenming Hu and published by Woodhead Publishing. This book was released on 2019-05-22 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Industry Standard FDSOI Compact Model BSIM-IMG for IC Design helps readers develop an understanding of a FDSOI device and its simulation model. It covers the physics and operation of the FDSOI device, explaining not only how FDSOI enables further scaling, but also how it offers unique possibilities in circuits. Following chapters cover the industry standard compact model BSIM-IMG for FDSOI devices. The book addresses core surface-potential calculations and the plethora of real devices and potential effects. Written by the original developers of the industrial standard model, this book is an excellent reference for the new BSIM-IMG compact model for emerging FDSOI technology. The authors include chapters on step-by-step parameters extraction procedure for BSIM-IMG model and rigorous industry grade tests that the BSIM-IMG model has undergone. There is also a chapter on analog and RF circuit design in FDSOI technology using the BSIM-IMG model.

Sub-threshold Design for Ultra Low-Power Systems

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Publisher : Springer Science & Business Media
ISBN 13 : 0387345019
Total Pages : 218 pages
Book Rating : 4.3/5 (873 download)

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Book Synopsis Sub-threshold Design for Ultra Low-Power Systems by : Alice Wang

Download or read book Sub-threshold Design for Ultra Low-Power Systems written by Alice Wang and published by Springer Science & Business Media. This book was released on 2006-12-11 with total page 218 pages. Available in PDF, EPUB and Kindle. Book excerpt: Based on the work of MIT graduate students Alice Wang and Benton Calhoun, this book surveys the field of sub-threshold and low-voltage design and explores such aspects of sub-threshold circuit design as modeling, logic and memory circuit design. One important chapter of the book is dedicated to optimizing energy dissipation - a key metric for energy constrained designs. This book also includes invited chapters on the subject of analog sub-threshold circuits.

Semiconductor-On-Insulator Materials for Nanoelectronics Applications

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Publisher : Springer Science & Business Media
ISBN 13 : 3642158684
Total Pages : 437 pages
Book Rating : 4.6/5 (421 download)

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Book Synopsis Semiconductor-On-Insulator Materials for Nanoelectronics Applications by : Alexei Nazarov

Download or read book Semiconductor-On-Insulator Materials for Nanoelectronics Applications written by Alexei Nazarov and published by Springer Science & Business Media. This book was released on 2011-03-03 with total page 437 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Semiconductor-On-Insulator Materials for NanoElectronics Applications” is devoted to the fast evolving field of modern nanoelectronics, and more particularly to the physics and technology of nanoelectronic devices built on semiconductor-on-insulator (SemOI) systems. The book contains the achievements in this field from leading companies and universities in Europe, USA, Brazil and Russia. It is articulated around four main topics: 1. New semiconductor-on-insulator materials; 2. Physics of modern SemOI devices; 3. Advanced characterization of SemOI devices; 4. Sensors and MEMS on SOI. "Semiconductor-On-Insulator Materials for NanoElectonics Applications” is useful not only to specialists in nano- and microelectronics but also to students and to the wider audience of readers who are interested in new directions in modern electronics and optoelectronics.

Physical and Technical Problems of SOI Structures and Devices

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Publisher : Springer Science & Business Media
ISBN 13 : 9401101094
Total Pages : 296 pages
Book Rating : 4.4/5 (11 download)

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Book Synopsis Physical and Technical Problems of SOI Structures and Devices by : J.-P. Colinge

Download or read book Physical and Technical Problems of SOI Structures and Devices written by J.-P. Colinge and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt: In Physical and Technical Problems of SOI Structures and Devices, specialists in silicon-on-insulator technology from both East and West meet for the first time, giving the reader the chance to become acquainted with work from the former Soviet Union, hitherto only available in Russian and barely available to western scientists. Keynote lectures and state-of-the-art presentations give a wide-ranging panorama of the challenges posed by SOI materials and devices, material fabrication techniques, characterisation, device and circuit issues.