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Defects In Semiconductors Studied By Positron Annihilation Spectroscopy
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Author :Reinhard Krause-Rehberg Publisher :Springer Science & Business Media ISBN 13 :9783540643715 Total Pages :408 pages Book Rating :4.6/5 (437 download)
Book Synopsis Positron Annihilation in Semiconductors by : Reinhard Krause-Rehberg
Download or read book Positron Annihilation in Semiconductors written by Reinhard Krause-Rehberg and published by Springer Science & Business Media. This book was released on 1999 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive book reports on recent investigations of lattice imperfections in semiconductors by means of positron annihilation. It reviews positron techniques, and describes the application of these techniques to various kinds of defects, such as vacancies, impurity vacancy complexes and dislocations.
Book Synopsis Defects in Semiconductors Studied by Positron Annihilation Spectroscopy by :
Download or read book Defects in Semiconductors Studied by Positron Annihilation Spectroscopy written by and published by . This book was released on 1997 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Evolution of Vacancy-type Defects in Semiconductors by : Dana A. Al-Abdulmalik
Download or read book Evolution of Vacancy-type Defects in Semiconductors written by Dana A. Al-Abdulmalik and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Defect Studies in III-V Semiconductors by Positron Annihilation by : Mohamed Elsayed
Download or read book Defect Studies in III-V Semiconductors by Positron Annihilation written by Mohamed Elsayed and published by . This book was released on 2013-09-13 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Positron Annihilation Spectroscopy of Sub-surface Defects in Semiconductors by : Xiaodong Pi
Download or read book Positron Annihilation Spectroscopy of Sub-surface Defects in Semiconductors written by Xiaodong Pi and published by . This book was released on 2003 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characterisation and Control of Defects in Semiconductors by : Filip Tuomisto
Download or read book Characterisation and Control of Defects in Semiconductors written by Filip Tuomisto and published by Materials, Circuits and Device. This book was released on 2019-10-27 with total page 601 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an up-to-date review of the experimental and theoretical methods used for studying defects in semiconductors, this book focuses on recent developments driven by the requirements of new materials, including nitrides, oxide semiconductors and 2-D semiconductors.
Book Synopsis Some Defect Studies on the Compound Semiconductors GAAS, Inp and Sic Using Positron Annihilation Spectroscopy by : Aihong Deng
Download or read book Some Defect Studies on the Compound Semiconductors GAAS, Inp and Sic Using Positron Annihilation Spectroscopy written by Aihong Deng and published by . This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Some Defect Studies on the Compound Semiconductors GaAs, InP and SiC Using Positron Annihilation Spectroscopy" by Aihong, Deng, 鄧愛紅, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3124012 Subjects: Semiconductors - Spectra Positron annihilation
Book Synopsis General-Regnskab over det danske Missions-Selskabs Indtægter og Udgifter ved dets 5te Aars Slutning by :
Download or read book General-Regnskab over det danske Missions-Selskabs Indtægter og Udgifter ved dets 5te Aars Slutning written by and published by . This book was released on 1826 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Some Defect Studies on the Compound Semiconductors GaAs, InP and SiC Using Positron Annihilation Spectroscopy by : Aihong Deng
Download or read book Some Defect Studies on the Compound Semiconductors GaAs, InP and SiC Using Positron Annihilation Spectroscopy written by Aihong Deng and published by . This book was released on 2000 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Defects in Semiconductors written by and published by Academic Press. This book was released on 2015-06-08 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. Expert contributors Reviews of the most important recent literature Clear illustrations A broad view, including examination of defects in different semiconductors
Book Synopsis Identification of Defects in Semiconductors by :
Download or read book Identification of Defects in Semiconductors written by and published by Academic Press. This book was released on 1998-07-02 with total page 393 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.
Book Synopsis Dopants and Defects in Semiconductors, Second Edition by : Matthew D. McCluskey
Download or read book Dopants and Defects in Semiconductors, Second Edition written by Matthew D. McCluskey and published by CRC Press. This book was released on 2018-02-19 with total page 475 pages. Available in PDF, EPUB and Kindle. Book excerpt: Praise for the First Edition "The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics ... an easy reading, broad introductory overview of the field" ?Materials Today "... well written, with clear, lucid explanations ..." ?Chemistry World This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors. Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley. Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.
Book Synopsis Charged Semiconductor Defects by : Edmund G. Seebauer
Download or read book Charged Semiconductor Defects written by Edmund G. Seebauer and published by Springer Science & Business Media. This book was released on 2008-11-14 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.
Book Synopsis Advances in Defect Characterizations of Semiconductors Using Positrons by :
Download or read book Advances in Defect Characterizations of Semiconductors Using Positrons written by and published by . This book was released on 1996 with total page 7 pages. Available in PDF, EPUB and Kindle. Book excerpt: Positron Annihilation Spectroscopy (PAS) is a sensitive probe for studying the electronic structure of defects in solids. The authors summarize recent developments in defect characterization of semiconductors using depth-resolved PAS. The progress achieved in extending the capabilities of the PAS method is also described.
Book Synopsis Positron Spectroscopy of Solids by : Società italiana di fisica
Download or read book Positron Spectroscopy of Solids written by Società italiana di fisica and published by IOS Press. This book was released on 1995 with total page 807 pages. Available in PDF, EPUB and Kindle. Book excerpt: The lifetime of a positron inside a solid is normally less than a fraction of nanosecond. This is a very short time on a human scale, but is long enough to enable the positron to visit an extended region of the material, and to sense the atomic and electronic structure of the environment. Thus, we can inject a positron in a sample to draw from it some signal giving us information on the microscopic properties of the material. This idea has been successfully developed in a number of positron-based techniques of physical analysis, with resolution in energy, momentum, or position. The complex of these techniques is what we call now positron spectroscopy of solids. The field of application of the positron spectroscopy extends from advanced problems of solid-state physics to industrial applications in the area of characterization of high-tech materials. This volume focuses the attention on the physics that can be learned from positron-based methods, but also frames those methods in a wider context including other experimental approaches. It can be considered as a textbook on positron spectroscopy of solids, the sort of book that the newcomer takes for his approach to this field, but also as a useful research tool for the expert.
Book Synopsis Book of Abstracts from the International Workshop on Positron Studies of Defects 2024 (PSD-24) by : Rafael Ferragut
Download or read book Book of Abstracts from the International Workshop on Positron Studies of Defects 2024 (PSD-24) written by Rafael Ferragut and published by Trans Tech Publications Ltd. This book was released on 2024-08-23 with total page 105 pages. Available in PDF, EPUB and Kindle. Book excerpt: Following the long tradition that started in 1987, the International Workshop on Positron Studies of Defects 2024 (PSD-24) will be held in Como, Italy, in the period from September the 1st to 6th, 2024. The aim of the workshop is to provide an opportunity for exchange of the latest results and scientific information concerning the positron interactions with solids and surfaces, the generation of slow positron beams and their applications.
Book Synopsis Defects and Impurities in Silicon Materials by : Yutaka Yoshida
Download or read book Defects and Impurities in Silicon Materials written by Yutaka Yoshida and published by Springer. This book was released on 2016-03-30 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.
