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Characterisation And Control Of Defects In Semiconductors
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Book Synopsis Characterisation and Control of Defects in Semiconductors by : Filip Tuomisto
Download or read book Characterisation and Control of Defects in Semiconductors written by Filip Tuomisto and published by . This book was released on 2020 with total page 578 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Extended Defects in Semiconductors by : D. B. Holt
Download or read book Extended Defects in Semiconductors written by D. B. Holt and published by Cambridge University Press. This book was released on 2007-04-12 with total page 625 pages. Available in PDF, EPUB and Kindle. Book excerpt: A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.
Book Synopsis Extended Defects in Semiconductors by : D. B. Holt
Download or read book Extended Defects in Semiconductors written by D. B. Holt and published by . This book was released on 2007 with total page 631 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Defects In Functional Materials by : Chi-chung Francis Ling
Download or read book Defects In Functional Materials written by Chi-chung Francis Ling and published by World Scientific. This book was released on 2020-08-21 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt: The research of functional materials has attracted extensive attention in recent years, and its advancement nitrifies the developments of modern sciences and technologies like green sciences and energy, aerospace, medical and health, telecommunications, and information technology. The present book aims to summarize the research activities carried out in recent years devoting to the understanding of the physics and chemistry of how the defects play a role in the electrical, optical and magnetic properties and the applications of the different functional materials in the fields of magnetism, optoelectronic, and photovoltaic etc.
Book Synopsis Defect Control in Semiconductors by : K. Sumino
Download or read book Defect Control in Semiconductors written by K. Sumino and published by Elsevier. This book was released on 2012-12-02 with total page 817 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect control in semiconductors is a key technology for realizing the ultimate possibilities of modern electronics. The basis of such control lies in an integrated knowledge of a variety of defect properties. From this viewpoint, the volume discusses defect-related problems in connection with defect control in semiconducting materials, such as silicon, III-V, II-VI compounds, organic semiconductors, heterostructure, etc.The conference brought together scientists in the field of fundamental research and engineers involved in application related to electronic devices in order to promote future research activity in both fields and establish a fundamental knowledge of defect control. The main emphasis of the 254 papers presented in this volume is on the control of the concentration, distribution, structural and electronic states of any types of defects including impurities as well as control of the electrical, optical and other activities of defects. Due to the extensive length of the contents, only the number of papers presented per session is listed below.
Book Synopsis Defect Recognition and Image Processing in Semiconductors 1997 by : J. Doneker
Download or read book Defect Recognition and Image Processing in Semiconductors 1997 written by J. Doneker and published by Routledge. This book was released on 2017-11-22 with total page 524 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.
Book Synopsis Muon Spectroscopy by : Stephen J. Blundell
Download or read book Muon Spectroscopy written by Stephen J. Blundell and published by Oxford University Press. This book was released on 2021-11-10 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Muons, radioactive particles produced in accelerators, have emerged as an important tool to study problems in condensed matter physics and chemistry. Beams of muons with all their spins polarized can be used to investigate a variety of static and dynamic effects and hence to deduce properties concerning magnetism, superconductivity, molecular or chemical dynamics and a large number of other phenomena. The technique was originally the preserve of a few specialists located in particle physics laboratories. Today it is used by scientists from a very wide range of scientific backgrounds and interests. This modern, pedagogic introduction to muon spectroscopy is written with the beginner in the field in mind, but also aims to serve as a reference for more experienced researchers. The key principles are illustrated by numerous practical examples of the application of the technique to different areas of science and there are many worked examples and problems provided to test understanding. The book vividly demonstrates the power of the technique to extract important information in many different scientific contexts, all stemming, ultimately, from the exquisite magnetic sensitivity of the implanted muon spin.
Book Synopsis Defect and Impurity Engineered Semiconductors II: by : S. Ashok
Download or read book Defect and Impurity Engineered Semiconductors II: written by S. Ashok and published by Cambridge University Press. This book was released on 2014-06-05 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt: The evolution of semiconductor devices of progressively higher performance has generally followed improved material quality with ever fewer defect concentrations. However, a shift in focus over the years has brought the realization that complete elimination of defects in semiconductors during growth and processing is neither desirable nor necessary. It is expected that the future role of defects in semiconductors will be one of control - in density, properties, spatial location, and perhaps even temporal variation during the operating lifetime of the device. This book explores the effective use of defect control at various facets of technology and widely different semiconductor materials systems. Topics include: grown-in defects in bulk crystals; doping issues; grown-in defects in thin films; doping and defect issues in wide-gap semiconductors; process-induced defects and gettering; defect properties, reactions, activation and passivation; ion implantation and irradiation effects; defects in devices and interfaces; plasma processing; defect characterization; and interfaces, quantum wells and superlattices.
Book Synopsis Concise Encyclopedia of Materials Characterization by : R.W. Cahn
Download or read book Concise Encyclopedia of Materials Characterization written by R.W. Cahn and published by Elsevier. This book was released on 2016-01-22 with total page 670 pages. Available in PDF, EPUB and Kindle. Book excerpt: To use materials effectively, their composition, degree of perfection, physical and mechanical characteristics, and microstructure must be accurately determined. This concise encyclopledia covers the wide range of characterization techniques necessary to achieve this. Articles included are not only concerned with the characterization techniques of specific materials such as polymers, metals, ceramics and semiconductors but also techniques which can be applied to materials in general. The techniques described cover bulk methods, and also a number of specific methods to study the topography and composition of surface and near-surface regions. These techniques range from the well-established and traditional to the very latest including: atomic force microscopy; confocal optical microscopy; gamma ray diffractometry; thermal wave imaging; x-ray diffraction and time-resolved techniques. This unique concise encyclopedia comprises 116 articles by leading experts in the field from around the world to create the ideal guide for materials scientists, chemists and engineers involved with any aspect of materials characterization. With over 540 illustrations, extensive cross-referencing, approximately 900 references, and a detailed index, this concise encyclopedia will be a valuable asset to any materials science collection.
Book Synopsis Defect Control in Semiconductors by : Kōji Sumino
Download or read book Defect Control in Semiconductors written by Kōji Sumino and published by . This book was released on 1990 with total page 826 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect control in semiconductors is a key technology for realizing the ultimate possibilities of modern electronics. The basis of such control lies in an integrated knowledge of a variety of defect properties. From this viewpoint, the volume discusses defect-related problems in connection with defect control in semiconducting materials, such as silicon, III-V, II-VI compounds, organic semiconductors, heterostructure, etc. The conference brought together scientists in the field of fundamental research and engineers involved in application related to electronic devices in order to promote future research activity in both fields and establish a fundamental knowledge of defect control. The main emphasis of the 254 papers presented in this volume is on the control of the concentration, distribution, structural and electronic states of any types of defects including impurities as well as control of the electrical, optical and other activities of defects. Due to the extensive length of the contents, only the number of papers presented per session is listed below.
Book Synopsis Defect and Impurity Engineered Semiconductors and Devices III: Volume 719 by : S. Ashok
Download or read book Defect and Impurity Engineered Semiconductors and Devices III: Volume 719 written by S. Ashok and published by . This book was released on 2002-08-09 with total page 522 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on the deliberate introduction and manipulation of defects and impurities in order to engineer desired properties in semiconductor materials and devices. In view of current exciting developments in wide-bandgap semiconductors like GaN for blue light emission, as well as high-speed and high-temperature electronics, dopant and defect issues relevant to these materials are addressed. Also featured are semiconductor nanocavities and nano-structures, with emphasis on the formation and impact of vacancy-type defects. Defect reaction problems pertaining to impurity gettering, precipitation and hydrogen passivation are specific examples of defect engineering that improve the electronic quality of the material. A number of papers also deal with characterization techniques needed to study and to identify defects in materials and device structures. Finally, papers also address issues such as interface control and passivation, application of ion implantation, plasma treatment and rapid thermal processing for creating/activating/suppressing trap levels, and device applications.
Book Synopsis Semiconductor Defect Engineering: Volume 994 by : S. Ashok
Download or read book Semiconductor Defect Engineering: Volume 994 written by S. Ashok and published by Cambridge University Press. This book was released on 2014-06-05 with total page 390 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book, first published in 2007, focuses on the application of defects and impurities in current and emerging semiconductor technologies. The role of defects in the evolution of semiconductor technology is now recognized as one of refined control - in density, properties, spatial location, and perhaps even temporal variation during device operating lifetime. The concept of defect engineering has found numerous applications in the fabrication of semiconductors and devices with improved and/or new properties, and new trends extend defect engineering in structures with nm dimensions. This book shows interaction among researchers pursing effective use of defect incorporation and control at various facets of technology and widely different semiconductor materials systems. Topics include: dopant and defect issues in oxide and nitride semiconductors; defect properties, activation and passivation; defects in nanostructures and organic semiconductors; ion implantation and beam processing; defect characterization; heterojunctions and interfaces; process-induced defects; dopants and defects in group-IV semiconductors and defects in devices.
Book Synopsis Defects and Properties of Semiconductors by : J. Chikawa
Download or read book Defects and Properties of Semiconductors written by J. Chikawa and published by Springer. This book was released on 2011-12-25 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains nearly all of the papers presented at the Symposium on "Defects and Qualities of Semiconductors" which was held in Tokyo on May 17-18, 1984, under the sponsorship of the SOCIETY OF NON-TRADITIONAL TECHNOLOGY. The Symposium was organized by the promoting committee of the research project "Quality Developement of Semiconductors by Utilization of Crystal Defects" sponsored by the Science and Technology Agency of Japan. Defect study in semiconductor engineering started originally with seeking methods how to suppress generation of harmful defects during device processing in order to achieve a high yield of device fabrication. Recently, a new trend has appeared in which crystal defects are positively utilized to improve the device performance and reliability. A typical example is the intrinsic gettering technique for Czochralski silicon. Thus, a new term "DEFECT ENGINEERING" was born. It is becoming more important to control density and distribution of defects than to eliminate all the defects. Very precise and deep knowledge on defects is required to establish such techniques as generation and development of defects desired depending on type of devices and degree of integration. Electrical, optical and mechanical effects of defects should be also understood correctly. Such knowledge is essential even for eliminating defects from some specified device regions. It is the time now to investigate defect properties and defect kinetics in an energetic way. From this point of view, all the speakers in this symposium were invited among the most active investigators in the field of defect engineering in Japan.
Book Synopsis Metal Impurities in Silicon- and Germanium-based Technologies by : Cor L. Claeys
Download or read book Metal Impurities in Silicon- and Germanium-based Technologies written by Cor L. Claeys and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This book gives a unique review of different aspects of metallic contaminations in Si and Ge-based semiconductors. All important metals are discussed including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on the electrical device performance. Several control and possible gettering approaches are addressed. The book is a reference for researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. It has an interdisciplinary nature by combining different disciplines such as material science, defect engineering, device processing, defect and device characterization and device physics and engineering.
Book Synopsis Analytical Techniques for the Characterization of Compound Semiconductors by : G. Bastard
Download or read book Analytical Techniques for the Characterization of Compound Semiconductors written by G. Bastard and published by Elsevier. This book was released on 1991-07-26 with total page 554 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is a collection of 96 papers presented at the above Conference. The scope of the work includes optical and electrical methods as well as techniques for structural and compositional characterization. The contributed papers report on topics such as X-ray diffraction, TEM, depth profiling, photoluminescence, Raman scattering and various electrical methods. Of particular interest are combinations of different techniques providing complementary information. The compound semiconductors reviewed belong mainly to the III-V and III-VI families. The papers in this volume will provide a useful reference on the implications of new technologies in the characterization of compound semiconductors.
Book Synopsis Dopants and Defects in Semiconductors by : Matthew D. McCluskey
Download or read book Dopants and Defects in Semiconductors written by Matthew D. McCluskey and published by CRC Press. This book was released on 2018 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor basics -- Defect classifications -- Interfaces and devices -- Crystal growth and doping -- Electronic properties -- Vibrational properties -- Optical properties -- Thermal properties -- Electrical measurements -- Optical spectroscopy -- Particle-beam methods -- Microscopy and structural characterization
Book Synopsis C, H, N and O in Si and Characterization and Simulation of Materials and Processes by : A. Borghesi
Download or read book C, H, N and O in Si and Characterization and Simulation of Materials and Processes written by A. Borghesi and published by Newnes. This book was released on 2012-12-02 with total page 580 pages. Available in PDF, EPUB and Kindle. Book excerpt: Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry. The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which, through the use of atomic force and tunnel microscopies, high resolution electron microscopy and other high precision analysis instruments, now allows for direct access to atomic mechanisms. Secondly, the technological development which in all areas of applications, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturisation race, a precise mastery of the microscopic mechanisms.