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Transport Properties Of Metal Metal And Metal Insulator Heterostructures
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Book Synopsis Emergent Transport Properties of Magnetic Topological Insulator Heterostructures by : Kenji Yasuda
Download or read book Emergent Transport Properties of Magnetic Topological Insulator Heterostructures written by Kenji Yasuda and published by Springer Nature. This book was released on 2020-09-07 with total page 109 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reveals unique transport phenomena and functionalities in topological insulators coupled with magnetism and superconductivity. Topological insulators are a recently discovered class of materials that possess a spin-momentum-locked surface state. Their exotic spin texture makes them an exciting platform for investigating emergent phenomena, especially when coupled with magnetism or superconductivity. Focusing on the strong correlation between electricity and magnetism in magnetic topological insulators, the author presents original findings on current-direction-dependent nonreciprocal resistance, current-induced magnetization reversal and chiral edge conduction at the domain wall. In addition, he demonstrates how the coupling between superconductivity and topological surface state leads to substantial nonreciprocal resistance. The author also elucidates the origins of these phenomena and deepens readers’ understanding of the topologically nontrivial electronic state. The book includes several works which are published in top journals and were selected for the President’s Award by the University of Tokyo and for the Ikushi Prize, awarded to distinguished Ph.D. students in Japan.
Book Synopsis Quantum Theory of Transport Properties of Single Molecules by : Yoshihiro Asai
Download or read book Quantum Theory of Transport Properties of Single Molecules written by Yoshihiro Asai and published by CRC Press. This book was released on 2024-11-07 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt: The quantum transport theory, which dates back to the time of the Landauer theory in the field of mesoscopic physics, is now expanding its power on materials science and chemistry by earning chemical accuracy and physical reality and has become a new subject of non-equilibrium quantum transport theory for charge and heat at nanoscale. This growing subject invites cross-disciplinary developments, for example, the local heating theory developed earlier was examined and applied to the self-heating problem in the field of semiconductor- and nanoelectronic-device physics. This book compiles 25 key published papers to provide readers with convenient and comprehensive access to the important results and developments in the field. The book will appeal to a wide range of readers from varied backgrounds, especially those involved in charge- and/or heat-transport problems that widely spread over various subjects in materials science, chemistry, electric engineering, and condensed matter physics.
Book Synopsis Handbook for III-V High Electron Mobility Transistor Technologies by : D. Nirmal
Download or read book Handbook for III-V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Book Synopsis Spin Spirals and Charge Textures in Transition-Metal-Oxide Heterostructures by : Alex Frano
Download or read book Spin Spirals and Charge Textures in Transition-Metal-Oxide Heterostructures written by Alex Frano and published by Springer. This book was released on 2014-05-28 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents the results of resonant and non-resonant x-ray scattering experiments demonstrating the control of collective ordering phenomena in epitaxial nickel-oxide and copper-oxide based superlattices. Three outstanding results are reported: (1) LaNiO3-LaAlO3 superlattices with fewer than three consecutive NiO2 layers exhibit a novel spiral spin density wave, whereas superlattices with thicker nickel-oxide layer stacks remain paramagnetic. The magnetic transition is thus determined by the dimensionality of the electron system. The polarization plane of the spin density wave can be tuned by epitaxial strain and spatial confinement of the conduction electrons. (2) Further experiments on the same system revealed an unusual structural phase transition controlled by the overall thickness of the superlattices. The transition between uniform and twin-domain states is confined to the nickelate layers and leaves the aluminate layers unaffected. (3) Superlattices based on the high-temperature superconductor YBa2Cu3O7 exhibit an incommensurate charge density wave order that is stabilized by heterointerfaces. These results suggest that interfaces can serve as a powerful tool to manipulate the interplay between spin order, charge order, and superconductivity in cuprates and other transition metal oxides.
Book Synopsis Conductive Atomic Force Microscopy by : Mario Lanza
Download or read book Conductive Atomic Force Microscopy written by Mario Lanza and published by John Wiley & Sons. This book was released on 2017-12-04 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book to summarize the applications of CAFM as the most important method in the study of electronic properties of materials and devices at the nanoscale. To provide a global perspective, the chapters are written by leading researchers and application scientists from all over the world and cover novel strategies, configurations and setups where new information will be obtained with the help of CAFM. With its substantial content and logical structure, this is a valuable reference for researchers working with CAFM or planning to use it in their own fields of research.
Download or read book EMC 2008 written by Silvia Richter and published by Springer Science & Business Media. This book was released on 2008-09-20 with total page 906 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings of the14th European Microscopy Congress, held in Aachen, Germany, 1-5 September 2008. Jointly organised by the European Microscopy Society (EMS), the German Society for Electron Microscopy (DGE) and the local microscopists from RWTH Aachen University and the Research Centre Jülich, the congress brings together scientists from Europe and from all over the world. The scientific programme covers all recent developments in the three major areas of instrumentation and methods, materials science and life science.
Book Synopsis High Speed Heterostructure Devices by :
Download or read book High Speed Heterostructure Devices written by and published by Academic Press. This book was released on 1994-07-06 with total page 481 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume 41 includes an in-depth review of the most important, high-speed switches made with heterojunction technology. This volume is aimed at the graduate student or working researcher who needs a broad overview andan introduction to current literature. - The first complete review of InP-based HFETs and complementary HFETs, which promise very low power and high speed - Offers a complete, three-chapter review of resonant tunneling - Provides an emphasis on circuits as well as devices
Book Synopsis Optoelectronic Devices and Properties by : Oleg Sergiyenko
Download or read book Optoelectronic Devices and Properties written by Oleg Sergiyenko and published by BoD – Books on Demand. This book was released on 2011-04-19 with total page 678 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optoelectronic devices impact many areas of society, from simple household appliances and multimedia systems to communications, computing, spatial scanning, optical monitoring, 3D measurements and medical instruments. This is the most complete book about optoelectromechanic systems and semiconductor optoelectronic devices; it provides an accessible, well-organized overview of optoelectronic devices and properties that emphasizes basic principles.
Book Synopsis Silicon-Germanium (SiGe) Nanostructures by : Y. Shiraki
Download or read book Silicon-Germanium (SiGe) Nanostructures written by Y. Shiraki and published by Elsevier. This book was released on 2011-02-26 with total page 649 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices.With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures. - Reviews the materials science of nanostructures and their properties and applications in different electronic devices - Assesses the structural properties of SiGe nanostructures, discussing electronic band structures of SiGe alloys - Explores the formation of SiGe nanostructuresfeaturing different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition
Book Synopsis Transport Phenomena in Micro- and Nanoscale Functional Materials and Devices by : Joao B. Sousa
Download or read book Transport Phenomena in Micro- and Nanoscale Functional Materials and Devices written by Joao B. Sousa and published by William Andrew. This book was released on 2021-03-23 with total page 485 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transport Phenomena in Micro- and Nanoscale Functional Materials and Devices offers a pragmatic view on transport phenomena for micro- and nanoscale materials and devices, both as a research tool and as a means to implant new functions in materials. Chapters emphasize transport properties (TP) as a research tool at the micro/nano level and give an experimental view on underlying techniques. The relevance of TP is highlighted through the interplay between a micro/nanocarrier's characteristics and media characteristics: long/short-range order and disorder excitations, couplings, and in energy conversions. Later sections contain case studies on the role of transport properties in functional nanomaterials. This includes transport in thin films and nanostructures, from nanogranular films, to graphene and 2D semiconductors and spintronics, and from read heads, MRAMs and sensors, to nano-oscillators and energy conversion, from figures of merit, micro-coolers and micro-heaters, to spincaloritronics. - Presents a pragmatic description of electrical transport phenomena in micro- and nanoscale materials and devices from an experimental viewpoint - Provides an in-depth overview of the experimental techniques available to measure transport phenomena in micro- and nanoscale materials - Features case studies to illustrate how each technique works - Highlights emerging areas of interest in micro- and nanomaterial transport phenomena, including spintronics
Book Synopsis Quantum and Semi-classical Percolation and Breakdown in Disordered Solids by : Asok K. Sen
Download or read book Quantum and Semi-classical Percolation and Breakdown in Disordered Solids written by Asok K. Sen and published by Springer. This book was released on 2009-04-20 with total page 334 pages. Available in PDF, EPUB and Kindle. Book excerpt: This lecture notes in physics volume mainly focuses on the semi classical and qu- tum aspects of percolation and breakdown in disordered, composite or granular s- tems. The main reason for this undertaking has been the fact that, of late, there have been a lot of (theoretical) work on quantum percolation, but there is not even a (single) published review on the topic (and, of course, no book). Also, there are many theoretical and experimental studies on the nonlinear current-voltage characteristics both away from, as well as one approaches, an electrical breakdown in composite materials. Some of the results are quite intriguing and may broadly be explained utilising a semi classical (if not, fully quantum mechanical) tunnelling between - cron or nano-sized metallic islands dispersed separated by thin insulating layers, or in other words, between the dangling ends of small percolation clusters. There have also been several (theoretical) studies of Zener breakdown in Mott or Anderson in- lators. Again, there is no review available, connecting them in any coherent fashion. A compendium volume connecting these experimental and theoretical studies should be unique and very timely, and hence this volume. The book is organised as follows. For completeness, we have started with a short and concise introduction on classical percolation. In the ?rst chapter, D. Stauffer reviews the scaling theory of classical percolation emphasizing (biased) diffusion, without any quantum effects. The next chapter by A. K.
Book Synopsis Fundamentals of III-V Semiconductor MOSFETs by : Serge Oktyabrsky
Download or read book Fundamentals of III-V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.
Book Synopsis Springer Handbook of Condensed Matter and Materials Data by : Werner Martienssen
Download or read book Springer Handbook of Condensed Matter and Materials Data written by Werner Martienssen and published by Springer Science & Business Media. This book was released on 2006-09-21 with total page 1143 pages. Available in PDF, EPUB and Kindle. Book excerpt: Springer Handbook of Condensed Matter and Materials Data provides a concise compilation of data and functional relationships from the fields of solid-state physics and materials in this 1200 page volume. The data, encapsulated in 914 tables and 1025 illustrations, have been selected and extracted primarily from the extensive high-quality data collection Landolt-Börnstein and also from other systematic data sources and recent publications of physical and technical property data. Many chapters are authored by Landolt-Börnstein editors, including the prominent Springer Handbook editors, W. Martienssen and H. Warlimont themselves. The Handbook is designed to be useful as a desktop reference for fast and easy retrieval of essential and reliable data in the lab or office. References to more extensive data sources are also provided in the book and by interlinking to the relevant sources on the enclosed CD-ROM. Physicists, chemists and engineers engaged in fields of solid-state sciences and materials technologies in research, development and application will appreciate the ready access to the key information coherently organized within this wide-ranging Handbook. From the reviews: "...this is the most complete compilation I have ever seen... When I received the book, I immediately searched for data I never found elsewhere..., and I found them rapidly... No doubt that this book will soon be in every library and on the desk of most solid state scientists and engineers. It will never be at rest." -Physicalia Magazine
Book Synopsis Handbook of Spin Transport and Magnetism by : Evgeny Y. Tsymbal
Download or read book Handbook of Spin Transport and Magnetism written by Evgeny Y. Tsymbal and published by CRC Press. This book was released on 2016-04-19 with total page 797 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past several decades, the research on spin transport and magnetism has led to remarkable scientific and technological breakthroughs, including Albert Fert and Peter Grunberg's Nobel Prize-winning discovery of giant magnetoresistance (GMR) in magnetic metallic multilayers. Handbook of Spin Transport and Magnetism provides a comprehensive, bal
Book Synopsis Nanooptics, Nanophotonics, Nanostructures, and Their Applications by : Olena Fesenko
Download or read book Nanooptics, Nanophotonics, Nanostructures, and Their Applications written by Olena Fesenko and published by Springer. This book was released on 2018-06-26 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents some of the latest achievements in nanotechnology and nanomaterials from leading researchers in Ukraine, Europe, and beyond. It features selected peer-reviewed contributions from participants in the 5th International Science and Practice Conference Nanotechnology and Nanomaterials (NANO2017) held in Chernivtsi, Ukraine on August 23-26, 2017. The International Conference was organized jointly by the Institute of Physics of the National Academy of Sciences of Ukraine, Ivan Franko National University of Lviv (Ukraine), University of Tartu (Estonia), University of Turin (Italy), and Pierre and Marie Curie University (France). Internationally recognized experts from a wide range of universities and research institutions share their knowledge and key results on topics ranging from nanooptics and nanoplasmonics to interface studies. This book's companion volume also addresses topics such as energy storage and biomedical applications.
Download or read book Bibliography written by Pierre Villars and published by Walter de Gruyter. This book was released on 2012-12-21 with total page 1827 pages. Available in PDF, EPUB and Kindle. Book excerpt: By browsing about 10 000 000 scientific articles of over 200 major journals mainly in a 'cover to cover approach' some 200 000 publications were selected. The extracted data is part of the following fundamental material research fields: crystal structures (S), phase diagrams (also called constitution) (C) and the comprehensive field of intrinsic physical properties (P). This work has been done systematically starting with the literature going back to 1900. The above mentioned research field codes (S, C, P) as well as the chemical systems investigated in each publication were included in the present work. The aim of the Inorganic Substances Bibliography is to provide researchers with a comprehensive compilation of all up to now published scientific publications on inorganic systems in only three handy volumes.
Book Synopsis Metal Based Thin Films for Electronics by : Klaus Wetzig
Download or read book Metal Based Thin Films for Electronics written by Klaus Wetzig and published by John Wiley & Sons. This book was released on 2006-03-06 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt: This up-to-date handbook covers the main topics of preparation, characterization and properties of complex metal-based layer systems. The authors -- an outstanding group of researchers -- discuss advanced methods for structure, chemical and electronic state characterization with reference to the properties of thin functional layers, such as metallization and barrier layers for microelectronics, magnetoresistive layers for GMR and TMR, sensor and resistance layers. As such, the book addresses materials specialists in industry, especially in microelectronics, as well as scientists, and can also be recommended for advanced studies in materials science, analytics, surface and solid state science.
