Silicon-Germanium (SiGe) Nanostructures

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Publisher : Elsevier
ISBN 13 : 0857091425
Total Pages : 649 pages
Book Rating : 4.8/5 (57 download)

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Book Synopsis Silicon-Germanium (SiGe) Nanostructures by : Y. Shiraki

Download or read book Silicon-Germanium (SiGe) Nanostructures written by Y. Shiraki and published by Elsevier. This book was released on 2011-02-26 with total page 649 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices. The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices. With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures. Reviews the materials science of nanostructures and their properties and applications in different electronic devices Assesses the structural properties of SiGe nanostructures, discussing electronic band structures of SiGe alloys Explores the formation of SiGe nanostructuresfeaturing different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition

Silicon-Germanium (SiGe) Nanostructures for Thermoelectric Devices: Recent Advances and New Approaches to High Thermoelectric Efficiency

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Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (115 download)

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Book Synopsis Silicon-Germanium (SiGe) Nanostructures for Thermoelectric Devices: Recent Advances and New Approaches to High Thermoelectric Efficiency by : Jaime Andrés Pérez-Taborda

Download or read book Silicon-Germanium (SiGe) Nanostructures for Thermoelectric Devices: Recent Advances and New Approaches to High Thermoelectric Efficiency written by Jaime Andrés Pérez-Taborda and published by . This book was released on 2017 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon and germanium present distinct and interesting transport properties. However, composites made of silicon-germanium (SiGe) have resulted in a breakthrough in terms of their transport properties. Currently, these alloys are used in different applications, such as microelectronic devices and integrated circuits, photovoltaic cells, and thermoelectric applications. With respect to thermoelectricity, in the last decades, Si0.8Ge0.2 has attracted significant attention as an energy harvesting material, for powering space applications and other industrial applications. This chapter focuses on the recent advances and new approaches in silicon-germanium (Si1−xGex) nanostructures for thermoelectric devices with high thermoelectric efficiency obtained through magnetron sputtering.

Properties of Silicon Germanium and SiGe:Carbon

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Author :
Publisher : Inst of Engineering & Technology
ISBN 13 : 9780852967836
Total Pages : 358 pages
Book Rating : 4.9/5 (678 download)

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Book Synopsis Properties of Silicon Germanium and SiGe:Carbon by : Erich Kasper

Download or read book Properties of Silicon Germanium and SiGe:Carbon written by Erich Kasper and published by Inst of Engineering & Technology. This book was released on 2000 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt: The industrial relevance of SiGe has increased dramatically in the last few years with the manufacture of heterojunction bipolar circuits for the commercial wireless and datacomms markets by IBM and TEMIC. Major high technology companies see the development and use of SiGe as an important part of their strategy, so that there is a strong impetus to improve its characterization and exploitation. This liberally illustrated and fully indexed volume distills in a homogeneous, structured way the expertise of some 40 invited authors to comprehensively review the whole range of properties as well as SiGe; C, self-assembled nanostructures, quantum effects and device trends.

Properties of Silicon Germanium and SiGe

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Publisher : Inst of Engineering & Technology
ISBN 13 : 9780863415579
Total Pages : 372 pages
Book Rating : 4.4/5 (155 download)

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Book Synopsis Properties of Silicon Germanium and SiGe by : Erich Kasper

Download or read book Properties of Silicon Germanium and SiGe written by Erich Kasper and published by Inst of Engineering & Technology. This book was released on 1999-12 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: The industrial relevance of SiGe has increased dramatically in the last few years with the manufacture of heterojunction bipolar circuits for the commercial wireless and datacomms markets by IBM and TEMIC, with over 20 companies planning manufacture in the near future. Major high technology companies see the development and use of SiGe as an important part of their strategy, so that there is a strong impetus to improve its characterization and exploitation. This liberally illustrated and fully indexed volume distils in a homogeneous, structured way the expertise of some 40 invited authors to comprehensively review the whole range of properties as well as SiGe: C, self-assembled nanostructures, quantum effects and device trends. The book contains 75% more text than Prof. Kasper's earlier book Properties of strained and relaxed SiGe (INSPEC, IEE, 1995), thoroughly updates its content and adds many new topics.

Group IV Semiconductor Nanostructures - 2006:

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Author :
Publisher : Cambridge University Press
ISBN 13 : 9781107408791
Total Pages : 326 pages
Book Rating : 4.4/5 (87 download)

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Book Synopsis Group IV Semiconductor Nanostructures - 2006: by : Leonid Tsybeskov

Download or read book Group IV Semiconductor Nanostructures - 2006: written by Leonid Tsybeskov and published by Cambridge University Press. This book was released on 2014-06-05 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on advances in materials science and device applications of nanostructures composed of Si, Ge, diamond, SiGe and SiCGe. Continuous progress in the development of reproducibly grown quantum dots, wires and wells has produced a new class of functional materials and devices with characteristic dimensions less than 50nm. The broad spectrum of these devices ranges from commercially offered high-mobility transistors using strained Si to exploratory SiGe nanostructures for integrated optical interconnects and THz lasers. This book brings together researchers from chemistry, physics, biology, materials science and engineering to share and discuss both the challenges and progress towards a new generation of Si(SiGe, SiCGe)-based novel functional structures and devices. Topics include: light emission and photonic devices; Ge, SiGe and diamond nanostructures; strains, Si/Ge films and layers and Si nanocrystals.

Ordering of self-assembled Ge and SiGe nanostructures on vicinal Si surfaces

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Publisher :
ISBN 13 : 9783932749254
Total Pages : 122 pages
Book Rating : 4.7/5 (492 download)

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Book Synopsis Ordering of self-assembled Ge and SiGe nanostructures on vicinal Si surfaces by : Jianhong Zhu

Download or read book Ordering of self-assembled Ge and SiGe nanostructures on vicinal Si surfaces written by Jianhong Zhu and published by . This book was released on 1999 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Spin Coherence in Silicon/silicon-germanium Nanostructures

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Publisher :
ISBN 13 :
Total Pages : 148 pages
Book Rating : 4.:/5 (89 download)

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Book Synopsis Spin Coherence in Silicon/silicon-germanium Nanostructures by : James L. Truitt

Download or read book Spin Coherence in Silicon/silicon-germanium Nanostructures written by James L. Truitt and published by . This book was released on 2004 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Thermal Transport Measurement of Silicon-germanium Nanowires

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Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (689 download)

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Book Synopsis Thermal Transport Measurement of Silicon-germanium Nanowires by : Yunki Gwak

Download or read book Thermal Transport Measurement of Silicon-germanium Nanowires written by Yunki Gwak and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Thermal properties of one dimensional nanostructures are of interest for thermoelectric energy conversion. Thermoelectric efficiency is related to non dimensional thermoelectric figure of merit, ZT=S^2 o T/k, where S, o, k and T are Seebeck coefficient, electrical conductivity, thermal conductivity and the absolute temperature respectively. These physical properties are interdependent. Therefore, making materials with high ZT is a very challenging task. However, nanoscale materials can overcome some of these limitations. When the size of nanomaterials is comparable to wavelength and mean free path of energy carriers, especially phonons, size effect contributes to the thermal conductivity reduction without bringing about major changes in the electrical conductivity and the Seebeck coefficient. Therefore, the figure of merit ZT can be manipulated. For example, the thermal conductivities of several silicon nanowires were more than two orders of magnitude lower than that of bulk silicon values due to the enhanced boundary scattering. Among the nanoscale semiconductor materials, Silicon-Germanium(SiGe) alloy nanowire is a promising candidate for thermoelectric materials The thermal conductivities of SiGe core-shell nanowires with core diameters of 96nm, 129nm and 177nm were measured using a batch fabricated micro device in a temperature range of 40K-450K. SiGe nanowires used in the experiment were synthesized via the Vapour-Liquid-Solid (VLS) growth method. The thermal conductivity data was compared with thermal conductivity of Si and Ge nanowires. The data was compared with SiGe alloy thin film, bulk SiGe, Si/SixGe1-x superlattice nanowire, Si/Si0.7Ge0.3 superlattice thin film and also with the thermal conductivity of Si0.5Ge0.5 calculated using the Einstein model. The thermal conductivities of these SiGe alloy nanowires observed in this work are ~20 times lower than Si nanowires, ~10 times lower than Ge nanowires, ~3-4 times lower than Si/SixGe1-x superlattice thin film, Si/SixGe1-x superlattice nanowire and about 3 time lower than bulk SiGe alloy. The low values of thermal conductivity are majorly due to the effect of alloy scattering, due to increased boundary scattering as a result of nanoscale diameters, and the interface diffuse scattering by core-shell effect. The influence of core-shell effect, alloy scattering and boundary scattering effect in reducing the thermal conductivity of these nanowires opens up opportunities for tuning thermoelectric properties which can pave way to thermoelectric materials with high figures of merit in the future.

Stress and Strain Engineering at Nanoscale in Semiconductor Devices

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Author :
Publisher : CRC Press
ISBN 13 : 1000404935
Total Pages : 275 pages
Book Rating : 4.0/5 (4 download)

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Book Synopsis Stress and Strain Engineering at Nanoscale in Semiconductor Devices by : Chinmay K. Maiti

Download or read book Stress and Strain Engineering at Nanoscale in Semiconductor Devices written by Chinmay K. Maiti and published by CRC Press. This book was released on 2021-06-29 with total page 275 pages. Available in PDF, EPUB and Kindle. Book excerpt: Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.

Silicon, Germanium, and Their Alloys

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Publisher : CRC Press
ISBN 13 : 1466586648
Total Pages : 436 pages
Book Rating : 4.4/5 (665 download)

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Book Synopsis Silicon, Germanium, and Their Alloys by : Gudrun Kissinger

Download or read book Silicon, Germanium, and Their Alloys written by Gudrun Kissinger and published by CRC Press. This book was released on 2014-12-09 with total page 436 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon–germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium nanocrystals. World-recognized experts are the authors of the book’s chapters, which span bulk, thin film, and nanostructured materials growth and characterization problems, theoretical modeling, crystal defects, diffusion, and issues of key applicative value, including chemical etching as a defect delineation technique, the spectroscopic analysis of impurities, and the use of devices as tools for the measurement of materials quality.

Charcterization of Silicon-germanium-carbon Nanostructures on Silicon Substrates

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Publisher :
ISBN 13 :
Total Pages : 132 pages
Book Rating : 4.:/5 (398 download)

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Book Synopsis Charcterization of Silicon-germanium-carbon Nanostructures on Silicon Substrates by : Ralf Jonczyk

Download or read book Charcterization of Silicon-germanium-carbon Nanostructures on Silicon Substrates written by Ralf Jonczyk and published by . This book was released on 1998 with total page 132 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Low Dimensional Semiconducting Nanostructures

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Publisher :
ISBN 13 :
Total Pages : 198 pages
Book Rating : 4.:/5 (973 download)

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Book Synopsis Low Dimensional Semiconducting Nanostructures by : Prabath Wanaguru

Download or read book Low Dimensional Semiconducting Nanostructures written by Prabath Wanaguru and published by . This book was released on 2016 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematic studies of low dimensional semiconducting nanostructures have been performed. In particular, silicon-germanium (SiGe) armchair type nanotubes, and both zigzag and armchair type nanoribbons were used to represent the bottom-up approach while hematite nanoribbons were used to represent the top down approach. Four high symmetric nanostructure atomic arrangements were identified. All the SiGe nanotubes and SiGe nanoribbons show definite semiconducting character and the band gaps span over large range. Zigzag SiGe nanoribbons show direct band gap nature indicating potential applications in opto-electronic devices. Standalone SiGe nanoribbons may roll into nanotubes depending on the atomic arrangement. Li adsorption on SiGe nanotubes indicated that SiGe nanotubes have potential as anode material in Li-ion battery technology when the nanotube length is over 20 Å. Most stable site for Li adsorption is Si Top site and most preferred site is Ge Top. Intrinsic puckered surface nature screen the adsorbed Li from each other and hence, increase the charge density. Hydrogen atomic adsorption increases the band gap while oxygen breaks the nanotube-wall bonds and incorporates into nanotube lattice structure. Hematite nanoribbons based on two surfaces, (110) and (104) were studied. For each surface, depending on the termination direction, it can be identified two types. Both types based on (110) surface show definite semiconducting character. One type of (104) surface based nanoribbons show surface modification while the other type obtained built-in oxygen vacancy which acquired the spin dependent transport properties and hence, possible applications in spintronics area.

Quantum Optics with Semiconductor Nanostructures

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Publisher : Elsevier
ISBN 13 : 0857096397
Total Pages : 607 pages
Book Rating : 4.8/5 (57 download)

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Book Synopsis Quantum Optics with Semiconductor Nanostructures by : Frank Jahnke

Download or read book Quantum Optics with Semiconductor Nanostructures written by Frank Jahnke and published by Elsevier. This book was released on 2012-07-16 with total page 607 pages. Available in PDF, EPUB and Kindle. Book excerpt: An understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics.Part one provides a comprehensive overview of single quantum dot systems, beginning with a look at resonance fluorescence emission. Quantum optics with single quantum dots in photonic crystal and micro cavities are explored in detail, before part two goes on to review nanolasers with quantum dot emitters. Light-matter interaction in semiconductor nanostructures, including photon statistics and photoluminescence, is the focus of part three, whilst part four explores all-solid-state quantum optics, crystal nanobeam cavities and quantum-dot microcavity systems. Finally, part five investigates ultrafast phenomena, including femtosecond quantum optics and coherent optoelectronics with quantum dots.With its distinguished editor and international team of expert contributors, Quantum optics with semiconductor nanostructures is an essential guide for all those involved with the research, development, manufacture and use of semiconductors nanodevices, lasers and optical components, as well as scientists, researchers and students. A key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics Chapters provide a comprehensive overview of single quantum dot systems, nanolasers with quantum dot emitters, and light-matter interaction in semiconductor nanostructures Explores all-solid-state quantum optics, crystal nanobeam cavities and quantum-dot microcavity systems, and investigates ultrafast phenomena

Silicon Germanium Materials and Devices - A Market and Technology Overview to 2006

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Publisher : Elsevier
ISBN 13 : 0080541216
Total Pages : 419 pages
Book Rating : 4.0/5 (85 download)

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Book Synopsis Silicon Germanium Materials and Devices - A Market and Technology Overview to 2006 by : R. Szweda

Download or read book Silicon Germanium Materials and Devices - A Market and Technology Overview to 2006 written by R. Szweda and published by Elsevier. This book was released on 2002-11-26 with total page 419 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first edition of Silicon Germanium Materials & Devices - A Market & Technology Overview to 2006 examines the development of the silicon germanium business over a six-year period 2001 to 2006. It analyses the trends in markets, technologies and industry structure and profiles all the major players. It is specifically aimed at users and manufacturers of substrates, epiwafers, equipment and devices. The analysis includes a competitive assessment of the market of silicon germanium vs. gallium arsenide, indium phosphide vs. other forms of silicon. Silicon Germanium Materials & Devices - A Market & Technology Overview to 2006 is designed to assist with business plans, R&D and manufacturing strategies. It will be an indispensable aid for managers responsible for business development, technology assessment and market research. The report examines the rapid development of silicon germanium from an R&D curiosity to production status. An extensive treatment from materials through processes to devices and applications it encapsulates the entire silicon germanium business of today and assesses future directions. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.

Surface Microscopy with Low Energy Electrons

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Publisher : Springer
ISBN 13 : 1493909355
Total Pages : 513 pages
Book Rating : 4.4/5 (939 download)

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Book Synopsis Surface Microscopy with Low Energy Electrons by : Ernst Bauer

Download or read book Surface Microscopy with Low Energy Electrons written by Ernst Bauer and published by Springer. This book was released on 2014-07-10 with total page 513 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book, written by a pioneer in surface physics and thin film research and the inventor of Low Energy Electron Microscopy (LEEM), Spin-Polarized Low Energy Electron Microscopy (SPLEEM) and Spectroscopic Photo Emission and Low Energy Electron Microscopy (SPELEEM), covers these and other techniques for the imaging of surfaces with low energy (slow) electrons. These techniques also include Photoemission Electron Microscopy (PEEM), X-ray Photoemission Electron Microscopy (XPEEM), and their combination with microdiffraction and microspectroscopy, all of which use cathode lenses and slow electrons. Of particular interest are the fundamentals and applications of LEEM, PEEM, and XPEEM because of their widespread use. Numerous illustrations illuminate the fundamental aspects of the electron optics, the experimental setup, and particularly the application results with these instruments. Surface Microscopy with Low Energy Electrons will give the reader a unified picture of the imaging, diffraction, and spectroscopy methods that are possible using low energy electron microscopes.

New Research on Silicon

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Publisher : BoD – Books on Demand
ISBN 13 : 9535131591
Total Pages : 306 pages
Book Rating : 4.5/5 (351 download)

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Book Synopsis New Research on Silicon by : Vitalyi Igorevich Talanin

Download or read book New Research on Silicon written by Vitalyi Igorevich Talanin and published by BoD – Books on Demand. This book was released on 2017-05-31 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: The knowledge of fundamental silicon questions and all aspects of silicon technology gives the possibility of improvement to both initial silicon material and devices on silicon basis. The articles for this book have been contributed by the much respected researchers in this area and cover the most recent developments and applications of silicon technology and some fundamental questions. This book provides the latest research developments in important aspects of silicon including nanoclusters, solar silicon, porous silicon, some technological processes, and silicon devices and also fundamental question about silicon structural perfection. This book is of interest both to fundamental research and to practicing scientists and also will be useful to all engineers and students in industry and academia.

Nanoelectronic Materials

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Publisher : Springer
ISBN 13 : 3030216217
Total Pages : 783 pages
Book Rating : 4.0/5 (32 download)

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Book Synopsis Nanoelectronic Materials by : Loutfy H. Madkour

Download or read book Nanoelectronic Materials written by Loutfy H. Madkour and published by Springer. This book was released on 2019-06-27 with total page 783 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents synthesis techniques for the preparation of low-dimensional nanomaterials including 0D (quantum dots), 1D (nanowires, nanotubes) and 2D (thin films, few layers), as well as their potential applications in nanoelectronic systems. It focuses on the size effects involved in the transition from bulk materials to nanomaterials; the electronic properties of nanoscale devices; and different classes of nanomaterials from microelectronics to nanoelectronics, to molecular electronics. Furthermore, it demonstrates the structural stability, physical, chemical, magnetic, optical, electrical, thermal, electronic and mechanical properties of the nanomaterials. Subsequent chapters address their characterization, fabrication techniques from lab-scale to mass production, and functionality. In turn, the book considers the environmental impact of nanotechnology and novel applications in the mechanical industries, energy harvesting, clean energy, manufacturing materials, electronics, transistors, health and medical therapy. In closing, it addresses the combination of biological systems with nanoelectronics and highlights examples of nanoelectronic–cell interfaces and other advanced medical applications. The book answers the following questions: • What is different at the nanoscale? • What is new about nanoscience? • What are nanomaterials (NMs)? • What are the fundamental issues in nanomaterials? • Where are nanomaterials found? • What nanomaterials exist in nature? • What is the importance of NMs in our lives? • Why so much interest in nanomaterials? • What is at nanoscale in nanomaterials? • What is graphene? • Are pure low-dimensional systems interesting and worth pursuing? • Are nanotechnology products currently available? • What are sensors? • How can Artificial Intelligence (AI) and nanotechnology work together? • What are the recent advances in nanoelectronic materials? • What are the latest applications of NMs?