Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy

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ISBN 13 :
Total Pages : 682 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy by : John Condon Bean

Download or read book Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy written by John Condon Bean and published by . This book was released on 1988 with total page 682 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy

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Publisher :
ISBN 13 :
Total Pages : 619 pages
Book Rating : 4.:/5 (474 download)

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Book Synopsis Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy by : John C.. Bean

Download or read book Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy written by John C.. Bean and published by . This book was released on 1988 with total page 619 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Proceedings of the First International Symposium on Silicon Molecular Beam Epitaxy

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ISBN 13 :
Total Pages : 478 pages
Book Rating : 4.:/5 (318 download)

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Book Synopsis Proceedings of the First International Symposium on Silicon Molecular Beam Epitaxy by : John Condon Bean

Download or read book Proceedings of the First International Symposium on Silicon Molecular Beam Epitaxy written by John Condon Bean and published by . This book was released on 1985 with total page 478 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Proceedings of the Second International Symposium on Process Physics and Modeling in Semiconductor Technology

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ISBN 13 :
Total Pages : 826 pages
Book Rating : 4.:/5 (31 download)

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Book Synopsis Proceedings of the Second International Symposium on Process Physics and Modeling in Semiconductor Technology by : G. R. Srinivasan

Download or read book Proceedings of the Second International Symposium on Process Physics and Modeling in Semiconductor Technology written by G. R. Srinivasan and published by . This book was released on 1991 with total page 826 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon Molecular Beam Epitaxy

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Publisher : North Holland
ISBN 13 :
Total Pages : 484 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Silicon Molecular Beam Epitaxy by : Erich Kasper

Download or read book Silicon Molecular Beam Epitaxy written by Erich Kasper and published by North Holland. This book was released on 1990 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt: This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase epitaxy and ion beam epitaxy. A selection of contents: Volume I. SiGe Superlattices. SiGe strained layer superlattices (G. Abstreiter). Optical properties of strained GeSi superlattices grown on (001)Ge (T.P. Pearsall et al.). Growth and characterization of SiGe atomic layer superlattices (J.-M. Baribeau et al.). Optical properties of perfect and imperfect SiGe superlattices (K.B. Wong et al.). Confined phonons in stained short-period (001) Si/Ge superlattices (W. Bacsa et al.). Calculation of energies and Raman intensities of confined phonons in SiGe strained layer superlattices (J. White et al.). Rippled surface topography observed on silicon molecular beam epitaxial and vapour phase epitaxial layers (A.J. Pidduck et al.). The 698 meV optical band in MBE silicon (N. de Mello et al.). Silicon Growth Doping.

Silicon Molecular Beam Epitaxy

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Publisher : CRC Press
ISBN 13 : 1351085077
Total Pages : 306 pages
Book Rating : 4.3/5 (51 download)

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Book Synopsis Silicon Molecular Beam Epitaxy by : E. Kasper

Download or read book Silicon Molecular Beam Epitaxy written by E. Kasper and published by CRC Press. This book was released on 2018-05-04 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.

Heterostructures on Silicon: One Step Further with Silicon

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Publisher : Springer Science & Business Media
ISBN 13 : 9400909136
Total Pages : 361 pages
Book Rating : 4.4/5 (9 download)

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Book Synopsis Heterostructures on Silicon: One Step Further with Silicon by : Y. Nissim

Download or read book Heterostructures on Silicon: One Step Further with Silicon written by Y. Nissim and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 361 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the field of logic circuits in microelectronics, the leadership of silicon is now strongly established due to the achievement of its technology. Near unity yield of one million transistor chips on very large wafers (6 inches today, 8 inches tomorrow) are currently accomplished in industry. The superiority of silicon over other material can be summarized as follow: - The Si/Si0 interface is the most perfect passivating interface ever 2 obtained (less than 10" e y-I cm2 interface state density) - Silicon has a large thermal conductivity so that large crystals can be pulled. - Silicon is a hard material so that large wafers can be handled safely. - Silicon is thermally stable up to 1100°C so that numerous metallurgical operations (oxydation, diffusion, annealing ... ) can be achieved safely. - There is profusion of silicon on earth so that the base silicon wafer is cheap. Unfortunatly, there are fundamental limits that cannot be overcome in silicon due to material properties: laser action, infra-red detection, high mobility for instance. The development of new technologies of deposition and growth has opened new possibilities for silicon based structures. The well known properties of silicon can now be extended and properly used in mixed structures for areas such as opto-electronics, high-speed devices. This has been pioneered by the integration of a GaAs light emitting diode on a silicon based structure by an MIT group in 1985.

Physics Of Semiconductors - Proceedings Of The 20th International Conference (In 3 Volumes)

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Publisher : World Scientific
ISBN 13 : 9814583634
Total Pages : 2768 pages
Book Rating : 4.8/5 (145 download)

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Book Synopsis Physics Of Semiconductors - Proceedings Of The 20th International Conference (In 3 Volumes) by : E M Anastassakis

Download or read book Physics Of Semiconductors - Proceedings Of The 20th International Conference (In 3 Volumes) written by E M Anastassakis and published by World Scientific. This book was released on 1990-11-29 with total page 2768 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gathering top experts in the field, the 20th ICPS proceedings reviews the progress in all aspects of semiconductor physics. The proceedings will include state-of-the-art lectures with special emphasis on exciting new developments. It should serve as excellent material for researchers in this and related fields.

Polycrystalline Semiconductors

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Publisher : Springer Science & Business Media
ISBN 13 : 3642934137
Total Pages : 399 pages
Book Rating : 4.6/5 (429 download)

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Book Synopsis Polycrystalline Semiconductors by : Hans J. Möller

Download or read book Polycrystalline Semiconductors written by Hans J. Möller and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 399 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book summarizes the most recent aspects of polycrystalline semiconductors as presented at the conference Polycrystalline Semiconductors - Grain Boundaries and Interfaces. It contains 12 review articles on selected topics written by experts in their fields and 41 complementary contributed papers. The structure, chemistry and physics of grain boundaries and other interfaces are experimentally and theoretically studied. Aspects of the technologically important polycrystalline silicon are discussed in detail. Also covered are other polycrystalline semiconductors, germanium and compound semiconductors, that are currently of interest in fundamental research and in the technology of solar cells and thin film devices. Anyone interested in polycrystalline semiconductors will be able to use this comprehensive collection to advantage. It also suggests directions for new research and development.

Electrical & Electronics Abstracts

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Publisher :
ISBN 13 :
Total Pages : 2304 pages
Book Rating : 4.3/5 (243 download)

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Book Synopsis Electrical & Electronics Abstracts by :

Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 2304 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Handbook of Thin Films, Five-Volume Set

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Publisher : Elsevier
ISBN 13 : 0080533248
Total Pages : 3451 pages
Book Rating : 4.0/5 (85 download)

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Book Synopsis Handbook of Thin Films, Five-Volume Set by : Hari Singh Nalwa

Download or read book Handbook of Thin Films, Five-Volume Set written by Hari Singh Nalwa and published by Elsevier. This book was released on 2001-11-17 with total page 3451 pages. Available in PDF, EPUB and Kindle. Book excerpt: This five-volume handbook focuses on processing techniques, characterization methods, and physical properties of thin films (thin layers of insulating, conducting, or semiconductor material). The editor has composed five separate, thematic volumes on thin films of metals, semimetals, glasses, ceramics, alloys, organics, diamonds, graphites, porous materials, noncrystalline solids, supramolecules, polymers, copolymers, biopolymers, composites, blends, activated carbons, intermetallics, chalcogenides, dyes, pigments, nanostructured materials, biomaterials, inorganic/polymer composites, organoceramics, metallocenes, disordered systems, liquid crystals, quasicrystals, and layered structures. Thin films is a field of the utmost importance in today's materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, digital camcorders, sensitive broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are but a few examples of miniaturized device technologies that depend the utilization of thin film materials. The Handbook of Thin Films Materials is a comprehensive reference focusing on processing techniques, characterization methods, and physical properties of these thin film materials.

Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 9

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Publisher : The Electrochemical Society
ISBN 13 : 1607688689
Total Pages : 176 pages
Book Rating : 4.6/5 (76 download)

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Book Synopsis Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 9 by : F. Roozeboom

Download or read book Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 9 written by F. Roozeboom and published by The Electrochemical Society. This book was released on 2019-05-17 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions includes papers based on presentations from the symposium "Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 9," originally held at the 235th ECS Meeting in Dallas, Texas, May 26-30, 2019.

Proceedings of the Second International Symposium on Ultra-Clean Processing of Silicon Surfaces

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ISBN 13 :
Total Pages : 388 pages
Book Rating : 4.:/5 (42 download)

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Book Synopsis Proceedings of the Second International Symposium on Ultra-Clean Processing of Silicon Surfaces by : Marc Heyns

Download or read book Proceedings of the Second International Symposium on Ultra-Clean Processing of Silicon Surfaces written by Marc Heyns and published by . This book was released on 1994 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Selected Topics in Group IV and II-VI Semiconductors

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Publisher : North-Holland
ISBN 13 : 9780444824110
Total Pages : 770 pages
Book Rating : 4.8/5 (241 download)

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Book Synopsis Selected Topics in Group IV and II-VI Semiconductors by : Erich Kasper

Download or read book Selected Topics in Group IV and II-VI Semiconductors written by Erich Kasper and published by North-Holland. This book was released on 1996-01-01 with total page 770 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the proceedings of two symposia which brought together crystal growers, chemists and physicists from across the world. The first part is concerned with silicon molecular beam epitaxy and presents an overview of the most research being done in the field.Part two discusses the problems dealing with purification, doping and defects of II-VI materials, mainly of the important semiconductors CdTe and ZnSe. The focus is on materials science issues which are the key for a better understanding of these materials and for any industrial application.

VLSI Science and Technology/1984

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ISBN 13 :
Total Pages : 554 pages
Book Rating : 4.:/5 (41 download)

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Book Synopsis VLSI Science and Technology/1984 by : Kenneth E. Bean

Download or read book VLSI Science and Technology/1984 written by Kenneth E. Bean and published by . This book was released on 1984 with total page 554 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Epitaxial Silicon Technology

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Publisher : Elsevier
ISBN 13 : 0323155456
Total Pages : 336 pages
Book Rating : 4.3/5 (231 download)

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Book Synopsis Epitaxial Silicon Technology by : B Baliga

Download or read book Epitaxial Silicon Technology written by B Baliga and published by Elsevier. This book was released on 2012-12-02 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial Silicon Technology is a single-volume, in-depth review of all the silicon epitaxial growth techniques. This technology is being extended to the growth of epitaxial layers on insulating substrates by means of a variety of lateral seeding approaches. This book is divided into five chapters, and the opening chapter describes the growth of silicon layers by vapor-phase epitaxy, considering both atmospheric and low-pressure growth. The second chapter discusses molecular-beam epitaxial growth of silicon, providing a unique ability to grow very thin layers with precisely controlled doping characteristics. The third chapter introduces the silicon liquid-phase epitaxy, in which the growth of silicon layers arose from a need to decrease the growth temperature and to suppress autodoping. The fourth chapter addresses the growth of silicon on sapphire for improving the radiation hardness of CMOS integrated circuits. The fifth chapter deals with the advances in the application of silicon epitaxial growth. This chapter also discusses the formation of epitaxial layers of silicon on insulators, such as silicon dioxide, which do not provide a natural single crystal surface for growth. Each chapter begins with a discussion on the fundamental transport mechanisms and the kinetics governing the growth rate, followed by a description of the electrical properties that can be achieved in the layers and the restrictions imposed by the growth technique upon the control over its electrical characteristics. Each chapter concludes with a discussion on the applications of the particular growth technique. This reference material will be useful for process technologists and engineers who may need to apply epitaxial growth for device fabrication.

Proceedings of the Second International Conference on Synchrotron Radiation in Materials Science, October 31-November 3, 1998, Kobe, Japan

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ISBN 13 :
Total Pages : 688 pages
Book Rating : 4.X/5 (4 download)

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Book Synopsis Proceedings of the Second International Conference on Synchrotron Radiation in Materials Science, October 31-November 3, 1998, Kobe, Japan by : Teikichi A. Sasaki

Download or read book Proceedings of the Second International Conference on Synchrotron Radiation in Materials Science, October 31-November 3, 1998, Kobe, Japan written by Teikichi A. Sasaki and published by . This book was released on 1998 with total page 688 pages. Available in PDF, EPUB and Kindle. Book excerpt: