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Author : John Condon Bean
Publisher :
ISBN 13 :
Total Pages : 478 pages
Book Rating : 4.:/5 (318 download)
Download or read book Proceedings of the First International Symposium on Silicon Molecular Beam Epitaxy written by John Condon Bean and published by . This book was released on 1985 with total page 478 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : International Symposium on Silicon Molecular Beam Epitaxy. 1, 1985, Toronto
Publisher :
ISBN 13 :
Total Pages : 455 pages
Book Rating : 4.:/5 (312 download)
Download or read book Proceedings of the First International Symposium on Silicon Molecular Beam Epitaxy, Held May 14-17, 1985, Toronto, Ohio written by International Symposium on Silicon Molecular Beam Epitaxy. 1, 1985, Toronto and published by . This book was released on 1985 with total page 455 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : John Condon Bean
Publisher :
ISBN 13 :
Total Pages : 682 pages
Book Rating : 4.3/5 (91 download)
Download or read book Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy written by John Condon Bean and published by . This book was released on 1988 with total page 682 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : John C.. Bean
Publisher :
ISBN 13 :
Total Pages : 619 pages
Book Rating : 4.:/5 (474 download)
Download or read book Proceedings of the Second International Symposium on Silicon Molecular Beam Epitaxy written by John C.. Bean and published by . This book was released on 1988 with total page 619 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : E. Kasper
Publisher : CRC Press
ISBN 13 : 1351085077
Total Pages : 306 pages
Book Rating : 4.3/5 (51 download)
Download or read book Silicon Molecular Beam Epitaxy written by E. Kasper and published by CRC Press. This book was released on 2018-05-04 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Author : B Baliga
Publisher : Elsevier
ISBN 13 : 0323155456
Total Pages : 336 pages
Book Rating : 4.3/5 (231 download)
Download or read book Epitaxial Silicon Technology written by B Baliga and published by Elsevier. This book was released on 2012-12-02 with total page 336 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial Silicon Technology is a single-volume, in-depth review of all the silicon epitaxial growth techniques. This technology is being extended to the growth of epitaxial layers on insulating substrates by means of a variety of lateral seeding approaches. This book is divided into five chapters, and the opening chapter describes the growth of silicon layers by vapor-phase epitaxy, considering both atmospheric and low-pressure growth. The second chapter discusses molecular-beam epitaxial growth of silicon, providing a unique ability to grow very thin layers with precisely controlled doping characteristics. The third chapter introduces the silicon liquid-phase epitaxy, in which the growth of silicon layers arose from a need to decrease the growth temperature and to suppress autodoping. The fourth chapter addresses the growth of silicon on sapphire for improving the radiation hardness of CMOS integrated circuits. The fifth chapter deals with the advances in the application of silicon epitaxial growth. This chapter also discusses the formation of epitaxial layers of silicon on insulators, such as silicon dioxide, which do not provide a natural single crystal surface for growth. Each chapter begins with a discussion on the fundamental transport mechanisms and the kinetics governing the growth rate, followed by a description of the electrical properties that can be achieved in the layers and the restrictions imposed by the growth technique upon the control over its electrical characteristics. Each chapter concludes with a discussion on the applications of the particular growth technique. This reference material will be useful for process technologists and engineers who may need to apply epitaxial growth for device fabrication.
Author : Electrochemical Society. High Temperature Materials Division
Publisher :
ISBN 13 :
Total Pages : 1296 pages
Book Rating : 4.E/5 ( download)
Download or read book Proceedings of the Tenth International Conference on Chemical Vapor Deposition, 1987 written by Electrochemical Society. High Temperature Materials Division and published by . This book was released on 1987 with total page 1296 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Y. Nissim
Publisher : Springer Science & Business Media
ISBN 13 : 9400909136
Total Pages : 361 pages
Book Rating : 4.4/5 (9 download)
Download or read book Heterostructures on Silicon: One Step Further with Silicon written by Y. Nissim and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 361 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the field of logic circuits in microelectronics, the leadership of silicon is now strongly established due to the achievement of its technology. Near unity yield of one million transistor chips on very large wafers (6 inches today, 8 inches tomorrow) are currently accomplished in industry. The superiority of silicon over other material can be summarized as follow: - The Si/Si0 interface is the most perfect passivating interface ever 2 obtained (less than 10" e y-I cm2 interface state density) - Silicon has a large thermal conductivity so that large crystals can be pulled. - Silicon is a hard material so that large wafers can be handled safely. - Silicon is thermally stable up to 1100°C so that numerous metallurgical operations (oxydation, diffusion, annealing ... ) can be achieved safely. - There is profusion of silicon on earth so that the base silicon wafer is cheap. Unfortunatly, there are fundamental limits that cannot be overcome in silicon due to material properties: laser action, infra-red detection, high mobility for instance. The development of new technologies of deposition and growth has opened new possibilities for silicon based structures. The well known properties of silicon can now be extended and properly used in mixed structures for areas such as opto-electronics, high-speed devices. This has been pioneered by the integration of a GaAs light emitting diode on a silicon based structure by an MIT group in 1985.
Author : Martin P. Scott
Publisher :
ISBN 13 :
Total Pages : 260 pages
Book Rating : 4.:/5 (41 download)
Download or read book Proceedings of the First International Symposium on Advanced Materials for ULSI written by Martin P. Scott and published by . This book was released on 1988 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Erich Kasper
Publisher : North-Holland
ISBN 13 : 9780444824110
Total Pages : 770 pages
Book Rating : 4.8/5 (241 download)
Download or read book Selected Topics in Group IV and II-VI Semiconductors written by Erich Kasper and published by North-Holland. This book was released on 1996-01-01 with total page 770 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the proceedings of two symposia which brought together crystal growers, chemists and physicists from across the world. The first part is concerned with silicon molecular beam epitaxy and presents an overview of the most research being done in the field.Part two discusses the problems dealing with purification, doping and defects of II-VI materials, mainly of the important semiconductors CdTe and ZnSe. The focus is on materials science issues which are the key for a better understanding of these materials and for any industrial application.
Author : Guy LeLay
Publisher : Springer Science & Business Media
ISBN 13 : 3642729673
Total Pages : 399 pages
Book Rating : 4.6/5 (427 download)
Download or read book Semiconductor Interfaces: Formation and Properties written by Guy LeLay and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 399 pages. Available in PDF, EPUB and Kindle. Book excerpt: The trend towards miniaturisation of microelectronic devices and the search for exotic new optoelectronic devices based on multilayers confer a crucial role on semiconductor interfaces. Great advances have recently been achieved in the elaboration of new thin film materials and in the characterization of their interfacial properties, down to the atomic scale, thanks to the development of sophisticated new techniques. This book is a collection of lectures that were given at the International Winter School on Semiconductor Interfaces: Formation and Properties held at the Centre de Physique des Rouches from 24 February to 6 March, 1987. The aim of this Winter School was to present a comprehensive review of this field, in particular of the materials and methods, and to formulate recom mendations for future research. The following topics are treated: (i) Interface formation. The key aspects of molecular beam epitaxy are emphasized, as well as the fabrication of artificially layered structures, strained layer superlattices and the tailoring of abrupt doping profiles. (ii) Fine characterization down to the atomic scale using recently devel oped, powerful techniques such as scanning tunneling microscopy, high reso lution transmission electron microscopy, glancing incidence x-ray diffraction, x-ray standing waves, surface extended x-ray absorption fine structure and surface extended energy-loss fine structure. (iii) Specific physical properties of the interfaces and their prospective applications in devices. We wish to thank warmly all the lecturers and participants, as well as the organizing committee, who made this Winter School a success.
Author : David Louis Harame
Publisher : The Electrochemical Society
ISBN 13 : 9781566774208
Total Pages : 1242 pages
Book Rating : 4.7/5 (742 download)
Download or read book SiGe--materials, Processing, and Devices written by David Louis Harame and published by The Electrochemical Society. This book was released on 2004 with total page 1242 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Erich Kasper
Publisher : North Holland
ISBN 13 :
Total Pages : 484 pages
Book Rating : 4.3/5 (91 download)
Download or read book Silicon Molecular Beam Epitaxy written by Erich Kasper and published by North Holland. This book was released on 1990 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt: This two-volume work covers recent developments in the single crystal growth, by molecular beam epitaxy, of materials compatible with silicon, their physical characterization, and device application. Papers are included on surface physics and related vacuum synthesis techniques such as solid phase epitaxy and ion beam epitaxy. A selection of contents: Volume I. SiGe Superlattices. SiGe strained layer superlattices (G. Abstreiter). Optical properties of strained GeSi superlattices grown on (001)Ge (T.P. Pearsall et al.). Growth and characterization of SiGe atomic layer superlattices (J.-M. Baribeau et al.). Optical properties of perfect and imperfect SiGe superlattices (K.B. Wong et al.). Confined phonons in stained short-period (001) Si/Ge superlattices (W. Bacsa et al.). Calculation of energies and Raman intensities of confined phonons in SiGe strained layer superlattices (J. White et al.). Rippled surface topography observed on silicon molecular beam epitaxial and vapour phase epitaxial layers (A.J. Pidduck et al.). The 698 meV optical band in MBE silicon (N. de Mello et al.). Silicon Growth Doping.
Author : R.A. Levy
Publisher : Springer Science & Business Media
ISBN 13 : 9400909179
Total Pages : 992 pages
Book Rating : 4.4/5 (9 download)
Download or read book Microelectronic Materials and Processes written by R.A. Levy and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 992 pages. Available in PDF, EPUB and Kindle. Book excerpt: The primary thrust of very large scale integration (VLS!) is the miniaturization of devices to increase packing density, achieve higher speed, and consume lower power. The fabrication of integrated circuits containing in excess of four million components per chip with design rules in the submicron range has now been made possible by the introduction of innovative circuit designs and the development of new microelectronic materials and processes. This book addresses the latter challenge by assessing the current status of the science and technology associated with the production of VLSI silicon circuits. It represents the cumulative effort of experts from academia and industry who have come together to blend their expertise into a tutorial overview and cohesive update of this rapidly expanding field. A balance of fundamental and applied contributions cover the basics of microelectronics materials and process engineering. Subjects in materials science include silicon, silicides, resists, dielectrics, and interconnect metallization. Subjects in process engineering include crystal growth, epitaxy, oxidation, thin film deposition, fine-line lithography, dry etching, ion implantation, and diffusion. Other related topics such as process simulation, defects phenomena, and diagnostic techniques are also included. This book is the result of a NATO-sponsored Advanced Study Institute (AS!) held in Castelvecchio Pascoli, Italy. Invited speakers at this institute provided manuscripts which were edited, updated, and integrated with other contributions solicited from non-participants to this AS!.
Author : Robert W. Fathauer
Publisher :
ISBN 13 :
Total Pages : 332 pages
Book Rating : 4.E/5 ( download)
Download or read book Molecular Beam Epitaxy of Heterostructures Based on Calcium Fluoride/silicon(111) written by Robert W. Fathauer and published by . This book was released on 1987 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Cor L. Claeys
Publisher : The Electrochemical Society
ISBN 13 : 9781566772419
Total Pages : 408 pages
Book Rating : 4.7/5 (724 download)
Download or read book ULSI Process Integration written by Cor L. Claeys and published by The Electrochemical Society. This book was released on 1999 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : John Condon Bean
Publisher :
ISBN 13 :
Total Pages : 682 pages
Book Rating : 4.3/5 (91 download)
Download or read book Silicon Molecular Beam Epitaxy written by John Condon Bean and published by . This book was released on 1991 with total page 682 pages. Available in PDF, EPUB and Kindle. Book excerpt: Featuring papers from the 1991 MRS Spring Meeting (April 29 - May 3, Anaheim, California), this volume contains 93 papers presenting research in Si MBE, including a key paper from the special Late News session on light from porous silicon. Topics covered include: homoepitaxy and substrate preparation; doping; GeSi growth; GeSi optical properties; GeSi electronic transport; device applications; epitaxial metals and insulators; novel materials and growth techniques.
