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Large Signal Characterization And Modeling Of Pseudomorphic High Electron Mobility Transistors With The Use Of Load Pull Measurements
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Book Synopsis Large Signal Characterization and Modeling of Pseudomorphic High Electron Mobility Transistors with the Use of Load Pull Measurements by : Tuan Huu Nguyen
Download or read book Large Signal Characterization and Modeling of Pseudomorphic High Electron Mobility Transistors with the Use of Load Pull Measurements written by Tuan Huu Nguyen and published by . This book was released on 1998 with total page 128 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Parameter Extraction and Complex Nonlinear Transistor Models by : Gunter Kompa
Download or read book Parameter Extraction and Complex Nonlinear Transistor Models written by Gunter Kompa and published by Artech House. This book was released on 2019-12-31 with total page 610 pages. Available in PDF, EPUB and Kindle. Book excerpt: All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and gallium nitride (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.
Book Synopsis Fabrication, Characterization, and Modeling of AlGaN/GaN High Electron Mobility Transistors by : Ekaterina Harvard
Download or read book Fabrication, Characterization, and Modeling of AlGaN/GaN High Electron Mobility Transistors written by Ekaterina Harvard and published by . This book was released on 2013 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt: Initially, advances in the high frequency markets were begun by work in Gallium Arsenide systems. In recent years, however, the focus has shifted to the promise of ever higher power at ever higher frequency with the emergence of wide bandgap group III-V semiconductors, including Gallium Nitride. One area receiving attention is that of novel passivation materials for the active areas of AlGaN/GaN devices. Passivation is a critical issue because surface trapping effects are essentially unavoidable, even with the highest queality epitaxial layers, due to the polarized nature of the material. The question then becomes, which passivation materials offer the best mitigation of surface trapping effects with the least impact on parasitic elements detrimental to device performance. In this work, AlGaN/GaN devices passivated with AlSiN for both high frequency and high power operation are studied. The high frequency devices were fabricated alongside devices passivated with SiN, a standard passivation material, and characterized for both small signal and large signal performance. The AlSiN passivation was found to enhance both small and large signal performance, and so another set of devices was fabricated with high voltage, high power switching as the intended application. These devices were characterized for off-state breakdown, which was more than 4 times that of typical SiN-passivated devices, and time-domain and loadline measurements were performed.
Book Synopsis Handbook of RF and Microwave Power Amplifiers by : John L. B. Walker
Download or read book Handbook of RF and Microwave Power Amplifiers written by John L. B. Walker and published by Cambridge University Press. This book was released on 2012 with total page 705 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is a one-stop guide for circuit designers and system/device engineers, covering everything from CAD to reliability.
Book Synopsis Large-signal Characterization of Dual-gate Field Effect Transistors Using Load-pull Measurements by : Denis Marion Drury
Download or read book Large-signal Characterization of Dual-gate Field Effect Transistors Using Load-pull Measurements written by Denis Marion Drury and published by . This book was released on 1987 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Analysis of the Equivalent Circuit Model of the AIGaN/GaN High Electron Mobility Transistor by : Chia-Hsuan Tsai
Download or read book Analysis of the Equivalent Circuit Model of the AIGaN/GaN High Electron Mobility Transistor written by Chia-Hsuan Tsai and published by . This book was released on 2006 with total page 44 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Modeling and Design of GaN High Electron Mobility Transistors and Hot Electron Transistors Through Monte Carlo Particle-based Device Simulations by : Riccardo Soligo
Download or read book Modeling and Design of GaN High Electron Mobility Transistors and Hot Electron Transistors Through Monte Carlo Particle-based Device Simulations written by Riccardo Soligo and published by . This book was released on 2016 with total page 135 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this work, the insight provided by our sophisticated Full Band Monte Carlo simulator is used to analyze the behavior of state-of-art devices like GaN High Electron Mobility Transistors and Hot Electron Transistors. Chapter 1 is dedicated to the description of the simulation tool used to obtain the results shown in this work. Moreover, a separate section is dedicated the set up of a procedure to validate to the tunneling algorithm recently implemented in the simulator. Chapter 2 introduces High Electron Mobility Transistors (HEMTs), state-of-art devices characterized by highly non linear transport phenomena that require the use of advanced simulation methods. The techniques for device modeling are described applied to a recent GaN-HEMT, and they are validated with experimental measurements. The main techniques characterization techniques are also described, including the original contribution provided by this work. Chapter 3 focuses on a popular technique to enhance HEMTs performance: the down-scaling of the device dimensions. In particular, this chapter is dedicated to lateral scaling and the calculation of a limiting cutoff frequency for a device of vanishing length. Finally, Chapter 4 and Chapter 5 describe the modeling of Hot Electron Transistors (HETs). The simulation approach is validated by matching the current characteristics with the experimental one before variations of the layouts are proposed to increase the current gain to values suitable for amplification. The frequency response of these layouts is calculated, and modeled by a small signal circuit. For this purpose, a method to directly calculate the capacitance is developed which provides a graphical picture of the capacitative phenomena that limit the frequency response in devices. In Chapter 5 the properties of the hot electrons are investigated for different injection energies, which are obtained by changing the layout of the emitter barrier. Moreover, the large signal characterization of the HET is shown for different layouts, where the collector barrier was scaled.
Book Synopsis Large Signal Characterisation of High Electron Mobility Transistors by : Ian Philip Sheppard
Download or read book Large Signal Characterisation of High Electron Mobility Transistors written by Ian Philip Sheppard and published by . This book was released on 1992 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 1995 with total page 778 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis A Large-signal Equivalent Circuit Model for a Novel ALGAAS/INGAAS/GAAS Pseudomorphic High Electron Mobility Transistor by : Nathan Lawrence Richardson
Download or read book A Large-signal Equivalent Circuit Model for a Novel ALGAAS/INGAAS/GAAS Pseudomorphic High Electron Mobility Transistor written by Nathan Lawrence Richardson and published by . This book was released on 1992 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scattering and Noise Measurements of Pseudomorphic High Electron Mobility Transistors by :
Download or read book Scattering and Noise Measurements of Pseudomorphic High Electron Mobility Transistors written by and published by . This book was released on 1904 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In the characterization of the transistors at microwaves, scattering and noise parameters are used in circuit design and, in particular noise measurements, for quality and reliability assessment. Results presented in literature are discussed, and the measurements of the scattering and noise parameters of some PHEMTs between 2 GHz and 26 GHz are published.
Book Synopsis Electrical & Electronics Abstracts by :
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 1860 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characterization of Pseudomorphic High Electron Mobility Transistor Using Surface Photovoltage Spectroscopy by : Sanelia Solodky
Download or read book Characterization of Pseudomorphic High Electron Mobility Transistor Using Surface Photovoltage Spectroscopy written by Sanelia Solodky and published by . This book was released on 1999 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Analysis and Optimization of AlGaN/GaN High Electron Mobility Transistors for Microwave Applications by : Michael Hosch
Download or read book Analysis and Optimization of AlGaN/GaN High Electron Mobility Transistors for Microwave Applications written by Michael Hosch and published by Cuvillier Verlag. This book was released on 2011-08-08 with total page 129 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis deals with the analysis and optimization of some of the most prominent non-ideal effects in AlGaN/GaN high electron mobility transistors used in microwave applications as well as the optimization of the RF gain. The effect of current collapse, the root cause of leakage currents as well as field-dependent self-heating effects have been investigated by eletrical characterization using well established techniques and have been analyzed using 2-dimensional physical device simulations. It will be shown that the origin of all effects is strongly related to the device surface and some are even competing effects making device optimization a challenge. However, a detailed localization of the regions affecting device performance will be given leading to a better understanding for fabrication process optimization. Finally, I simulation study is conducted giving suggestions for RF gain improvement based on very simple device layout variations.
Book Synopsis Gallium Nitride High Electron Mobility Transistors on Native Substrates for Power Switching Applications by : Muhammad Alshahed
Download or read book Gallium Nitride High Electron Mobility Transistors on Native Substrates for Power Switching Applications written by Muhammad Alshahed and published by . This book was released on 2019 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis An Analytical and Computer Aided Model for the High Electron Mobility Transistor by : Guan-wu Wang
Download or read book An Analytical and Computer Aided Model for the High Electron Mobility Transistor written by Guan-wu Wang and published by . This book was released on 1986 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Time-domain Characterization of Transistors by : James Joseph Kempf
Download or read book Time-domain Characterization of Transistors written by James Joseph Kempf and published by . This book was released on 1999 with total page 490 pages. Available in PDF, EPUB and Kindle. Book excerpt:
