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Download Exploitation Of Pre Stress Temperature Characterization For Algaas Gaas Microwave Power Heterojunction Bipolar Transistors full books in PDF, epub, and Kindle. Read online Exploitation Of Pre Stress Temperature Characterization For Algaas Gaas Microwave Power Heterojunction Bipolar Transistors ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Author :
Publisher :
ISBN 13 :
Total Pages : 622 pages
Book Rating : 4.3/5 (91 download)
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1997 with total page 622 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Albert G. Baca
Publisher : IET
ISBN 13 : 9780863413537
Total Pages : 372 pages
Book Rating : 4.4/5 (135 download)
Download or read book Fabrication of GaAs Devices written by Albert G. Baca and published by IET. This book was released on 2005-09 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. This book is suitable for both new and practising engineers.
Author : M. R. Brozel
Publisher : Inst of Engineering & Technology
ISBN 13 : 9780852968857
Total Pages : 981 pages
Book Rating : 4.9/5 (688 download)
Download or read book Properties of Gallium Arsenide written by M. R. Brozel and published by Inst of Engineering & Technology. This book was released on 1996 with total page 981 pages. Available in PDF, EPUB and Kindle. Book excerpt: It was in 1986 that INSPEC (The Information Division of the Institution of Electrical Engineers) published the book Properties of Gallium Arsenide. Since then, major developments have taken place. This third edition is comprised of 150 specially commissioned articles contributed by experts from the USA, Europe and Japan.
Author : Ian A. Glover
Publisher : John Wiley & Sons
ISBN 13 : 0470012749
Total Pages : 550 pages
Book Rating : 4.4/5 (7 download)
Download or read book Microwave Devices, Circuits and Subsystems for Communications Engineering written by Ian A. Glover and published by John Wiley & Sons. This book was released on 2006-05-01 with total page 550 pages. Available in PDF, EPUB and Kindle. Book excerpt: Microwave Devices, Circuits and Subsystems for Communications Engineering provides a detailed treatment of the common microwave elements found in modern microwave communications systems. The treatment is thorough without being unnecessarily mathematical. The emphasis is on acquiring a conceptual understanding of the techniques and technologies discussed and the practical design criteria required to apply these in real engineering situations. Key topics addressed include: Microwave diode and transistor equivalent circuits Microwave transmission line technologies and microstrip design Network methods and s-parameter measurements Smith chart and related design techniques Broadband and low-noise amplifier design Mixer theory and design Microwave filter design Oscillators, synthesisers and phase locked loops Each chapter is written by specialists in their field and the whole is edited by experience authors whose expertise spans the fields of communications systems engineering and microwave circuit design. Microwave Devices, Circuits and Subsystems for Communications Engineering is suitable for senior electrical, electronic or telecommunications engineering undergraduate students, first year postgraduate students and experienced engineers seeking a conversion or refresher text. Includes a companion website featuring: Solutions to selected problems Electronic versions of the figures Sample chapter
Author : A. Christou
Publisher : Springer Science & Business Media
ISBN 13 : 9400924828
Total Pages : 571 pages
Book Rating : 4.4/5 (9 download)
Download or read book Semiconductor Device Reliability written by A. Christou and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 571 pages. Available in PDF, EPUB and Kindle. Book excerpt: This publication is a compilation of papers presented at the Semiconductor Device Reliabi lity Workshop sponsored by the NATO International Scientific Exchange Program. The Workshop was held in Crete, Greece from June 4 to June 9, 1989. The objective of the Workshop was to review and to further explore advances in the field of semiconductor reliability through invited paper presentations and discussions. The technical emphasis was on quality assurance and reliability of optoelectronic and high speed semiconductor devices. The primary support for the meeting was provided by the Scientific Affairs Division of NATO. We are indebted to NATO for their support and to Dr. Craig Sinclair, who admin isters this program. The chapters of this book follow the format and order of the sessions of the meeting. Thirty-six papers were presented and discussed during the five-day Workshop. In addi tion, two panel sessions were held, with audience participation, where the particularly controversial topics of bum-in and reliability modeling and prediction methods were dis cussed. A brief review of these sessions is presented in this book.
Author : Sorab Khushro Ghandhi
Publisher : John Wiley & Sons
ISBN 13 :
Total Pages : 690 pages
Book Rating : 4.3/5 (91 download)
Download or read book VLSI Fabrication Principles written by Sorab Khushro Ghandhi and published by John Wiley & Sons. This book was released on 1983 with total page 690 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fully updated with the latest technologies, this edition covers the fundamental principles underlying fabrication processes for semiconductor devices along with integrated circuits made from silicon and gallium arsenide. Stresses fabrication criteria for such circuits as CMOS, bipolar, MOS, FET, etc. These diverse technologies are introduced separately and then consolidated into complete circuits. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Author : Matthias Rudolph
Publisher : Cambridge University Press
ISBN 13 : 1139502263
Total Pages : 367 pages
Book Rating : 4.1/5 (395 download)
Download or read book Nonlinear Transistor Model Parameter Extraction Techniques written by Matthias Rudolph and published by Cambridge University Press. This book was released on 2011-10-13 with total page 367 pages. Available in PDF, EPUB and Kindle. Book excerpt: Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction.
Author : Vassil Palankovski
Publisher : Springer Science & Business Media
ISBN 13 : 3709105609
Total Pages : 309 pages
Book Rating : 4.7/5 (91 download)
Download or read book Analysis and Simulation of Heterostructure Devices written by Vassil Palankovski and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 309 pages. Available in PDF, EPUB and Kindle. Book excerpt: The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
Author : Debdeep Jena
Publisher : Springer Science & Business Media
ISBN 13 : 0387368310
Total Pages : 523 pages
Book Rating : 4.3/5 (873 download)
Download or read book Polarization Effects in Semiconductors written by Debdeep Jena and published by Springer Science & Business Media. This book was released on 2008 with total page 523 pages. Available in PDF, EPUB and Kindle. Book excerpt: Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures. These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices. The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGaInN, and other nitrides, and SiC heterostructures. It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects. In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered. The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the "Polarization Effects in Semiconductors" DOD funded Multi Disciplinary University Research Initiative. This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications. It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development.
Author : R. K. Sharma
Publisher : Springer
ISBN 13 : 3319976044
Total Pages : 1260 pages
Book Rating : 4.3/5 (199 download)
Download or read book The Physics of Semiconductor Devices written by R. K. Sharma and published by Springer. This book was released on 2019-01-31 with total page 1260 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community. The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.
Author : Mildred Dresselhaus
Publisher : Springer
ISBN 13 : 3662559226
Total Pages : 521 pages
Book Rating : 4.6/5 (625 download)
Download or read book Solid State Properties written by Mildred Dresselhaus and published by Springer. This book was released on 2018-01-17 with total page 521 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book fills a gap between many of the basic solid state physics and materials sciencebooks that are currently available. It is written for a mixed audience of electricalengineering and applied physics students who have some knowledge of elementaryundergraduate quantum mechanics and statistical mechanics. This book, based on asuccessful course taught at MIT, is divided pedagogically into three parts: (I) ElectronicStructure, (II) Transport Properties, and (III) Optical Properties. Each topic is explainedin the context of bulk materials and then extended to low-dimensional materials whereapplicable. Problem sets review the content of each chapter to help students to understandthe material described in each of the chapters more deeply and to prepare them to masterthe next chapters.
Author : Eduard Säckinger
Publisher : John Wiley & Sons
ISBN 13 : 0471726397
Total Pages : 454 pages
Book Rating : 4.4/5 (717 download)
Download or read book Broadband Circuits for Optical Fiber Communication written by Eduard Säckinger and published by John Wiley & Sons. This book was released on 2005-05-27 with total page 454 pages. Available in PDF, EPUB and Kindle. Book excerpt: An expert guide to the new and emerging field of broadband circuits for optical fiber communication This exciting publication makes it easy for readers to enter into and deepen their knowledge of the new and emerging field of broadband circuits for optical fiber communication. The author's selection and organization of material have been developed, tested, and refined from his many industry courses and seminars. Five types of broadband circuits are discussed in detail: * Transimpedance amplifiers * Limiting amplifiers * Automatic gain control (AGC) amplifiers * Lasers drivers * Modulator drivers Essential background on optical fiber, photodetectors, lasers, modulators, and receiver theory is presented to help readers understand the system environment in which these broadband circuits operate. For each circuit type, the main specifications and their impact on system performance are explained and illustrated with numerical values. Next, the circuit concepts are discussed and illustrated with practical implementations. A broad range of circuits in MESFET, HFET, BJT, HBT, BiCMOS, and CMOS technologies is covered. Emphasis is on circuits for digital, continuous-mode transmission in the 2.5 to 40 Gb/s range, typically used in SONET, SDH, and Gigabit Ethernet applications. Burst-mode circuits for passive optical networks (PON) and analog circuits for hybrid fiber-coax (HFC) cable-TV applications also are discussed. Learning aids are provided throughout the text to help readers grasp and apply difficult concepts and techniques, including: * Chapter summaries that highlight the key points * Problem-and-answer sections to help readers apply their new knowledge * Research directions that point to exciting new technological breakthroughs on the horizon * Product examples that show the performance of actual broadband circuits * Appendices that cover eye diagrams, differential circuits, S parameters, transistors, and technologies * A bibliography that leads readers to more complete and in-depth treatment of specialized topics This is a superior learning tool for upper-level undergraduates and graduate-level students in circuit design and optical fiber communication. Unlike other texts that concentrate on analog circuits in general or mostly on optics, this text provides balanced coverage of electronic, optic, and system issues. Professionals in the fiber optic industry will find it an excellent reference, incorporating the latest technology and discoveries in the industry.
Author : D. Nirmal
Publisher : CRC Press
ISBN 13 : 0429862520
Total Pages : 434 pages
Book Rating : 4.4/5 (298 download)
Download or read book Handbook for III-V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots
Author : Rolf E. Hummel
Publisher : Springer Science & Business Media
ISBN 13 : 3662024241
Total Pages : 323 pages
Book Rating : 4.6/5 (62 download)
Download or read book Electronic Properties of Materials written by Rolf E. Hummel and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 323 pages. Available in PDF, EPUB and Kindle. Book excerpt: The present book on electrical, optical, magnetic and thermal properties of materials is in many aspects different from other introductory texts in solid state physics. First of all, this book is written for engineers, particularly materials and electrical engineers who want to gain a fundamental under standing of semiconductor devices, magnetic materials, lasers, alloys, etc. Second, it stresses concepts rather than mathematical formalism, which should make the presentation relatively easy to understand. Thus, this book provides a thorough preparation for advanced texts, monographs, or special ized journal articles. Third, this book is not an encyclopedia. The selection oftopics is restricted to material which is considered to be essential and which can be covered in a 15-week semester course. For those professors who want to teach a two-semester course, supplemental topics can be found which deepen the understanding. (These sections are marked by an asterisk [*]. ) Fourth, the present text leaves the teaching of crystallography, X-ray diffrac tion, diffusion, lattice defects, etc. , to those courses which specialize in these subjects. As a rule, engineering students learn this material at the beginning of their upper division curriculum. The reader is, however, reminded of some of these topics whenever the need arises. Fifth, this book is distinctly divided into five self-contained parts which may be read independently.
Author : R.S. Williams
Publisher : Springer Science & Business Media
ISBN 13 : 9401595763
Total Pages : 367 pages
Book Rating : 4.4/5 (15 download)
Download or read book Nanotechnology Research Directions: IWGN Workshop Report written by R.S. Williams and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 367 pages. Available in PDF, EPUB and Kindle. Book excerpt: energy production, environmental management, transportation, communication, computation, and education. As the twenty-first century unfolds, nanotechnology's impact on the health, wealth, and security of the world's people is expected to be at least as significant as the combined influences in this century of antibiotics, the integrated circuit, and human-made polymers. Dr. Neal Lane, Advisor to the President for Science and Technology and former National Science Foundation (NSF) director, stated at a Congressional hearing in April 1998, "If I were asked for an area of science and engineering that will most likely produce the breakthroughs of tomorrow, I would point to nanoscale science and engineering. " Recognizing this potential, the White House Office of Science and Technology Policy (OSTP) and the Office of Management and Budget (OMB) have issued a joint memorandum to Federal agency heads that identifies nanotechnology as a research priority area for Federal investment in fiscal year 2001. This report charts "Nanotechnology Research Directions," as developed by the Interagency W orking Group on Nano Science, Engineering, and Technology (IWGN) of the National Science and Technology Council (NSTC). The report incorporates the views of leading experts from government, academia, and the private sector. It reflects the consensus reached at an IWGN-sponsored workshop held on January 27-29, 1999, and detailed in contributions submitted thereafter by members of the V. S. science and engineering community. (See Appendix A for a list of contributors.
Author : David L. Pulfrey
Publisher : Cambridge University Press
ISBN 13 : 1139484672
Total Pages : 355 pages
Book Rating : 4.1/5 (394 download)
Download or read book Understanding Modern Transistors and Diodes written by David L. Pulfrey and published by Cambridge University Press. This book was released on 2010-01-28 with total page 355 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written in a concise, easy-to-read style, this text for senior undergraduate and graduate courses covers all key topics thoroughly. It is also a useful self-study guide for practising engineers who need a complete, up-to-date review of the subject. Key features: • Rigorous theoretical treatment combined with practical detail • A theoretical framework built up systematically from the Schrödinger Wave Equation and the Boltzmann Transport Equation • Covers MOSFETS, HBTs and HJFETS • Uses the PSP model for MOSFETS • Rigorous treatment of device capacitance • Describes the operation of modern, high-performance transistors and diodes • Evaluates the suitability of various transistor types and diodes for specific modern applications • Covers solar cells and LEDs and their potential impact on energy generation and reduction • Includes a chapter on nanotransistors to prepare students and professionals for the future • Provides results of detailed numerical simulations to compare with analytical solutions • End-of-chapter exercises • Online lecture slides for undergraduate and graduate courses
Author : Meiyong Liao
Publisher : Elsevier
ISBN 13 : 0128172568
Total Pages : 506 pages
Book Rating : 4.1/5 (281 download)
Download or read book Ultra-wide Bandgap Semiconductor Materials written by Meiyong Liao and published by Elsevier. This book was released on 2019-06-18 with total page 506 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride. - Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, ß-Ga2O3, boron nitrides, and low-dimensional materials - Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance - Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics
