The Luminescence Properties of the Wide Bandgap Nitrides Doped with Rare Earth Ions and Gallium Nitride Doped with Conventional Isoelectronic Impurities

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ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (492 download)

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Book Synopsis The Luminescence Properties of the Wide Bandgap Nitrides Doped with Rare Earth Ions and Gallium Nitride Doped with Conventional Isoelectronic Impurities by : Wojciech M. Jadwisieńczak

Download or read book The Luminescence Properties of the Wide Bandgap Nitrides Doped with Rare Earth Ions and Gallium Nitride Doped with Conventional Isoelectronic Impurities written by Wojciech M. Jadwisieńczak and published by . This book was released on 2001 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Dissertation Abstracts International

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ISBN 13 :
Total Pages : 656 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Dissertation Abstracts International by :

Download or read book Dissertation Abstracts International written by and published by . This book was released on 2002 with total page 656 pages. Available in PDF, EPUB and Kindle. Book excerpt:

American Doctoral Dissertations

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ISBN 13 :
Total Pages : 776 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis American Doctoral Dissertations by :

Download or read book American Doctoral Dissertations written by and published by . This book was released on 2001 with total page 776 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Handbook of Nitride Semiconductors and Devices

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Publisher :
ISBN 13 : 9783540469308
Total Pages : 800 pages
Book Rating : 4.4/5 (693 download)

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Book Synopsis Handbook of Nitride Semiconductors and Devices by : Hadis Morkoç

Download or read book Handbook of Nitride Semiconductors and Devices written by Hadis Morkoç and published by . This book was released on 2009-01 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with a clarity and depth not found elsewhere. The handbooks present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. They also deal with the properties and processes for thermal, optical (3-, 2-, 1-, 0-dimensional systems), electrical (at low- and high-electric fields, low- and high-magnetic fields for 3- and 2-dimensional systems), magnetism and magnetic properties (in dilute magnetic ion doped compounds) and spin-based device concepts. The associated measurement methods for each material deposition are discussed. The present volume 3 deals with nitride semiconductor devices and device technology. Among the applications areas that feature prominently are LEDs, lasers (including recording), FETs and HBTs (including novel treatment of fundamentals and hot phonon processes affecting the velocity), detectors and unique issues surrounding solar blind detection. This comprehensive handbook provides all interested researchers and engineers with an accessible treatment of this important class of materials.

Luminescence

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Publisher : Walter de Gruyter GmbH & Co KG
ISBN 13 : 3110676516
Total Pages : 332 pages
Book Rating : 4.1/5 (16 download)

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Book Synopsis Luminescence by : Ratnesh Tiwari

Download or read book Luminescence written by Ratnesh Tiwari and published by Walter de Gruyter GmbH & Co KG. This book was released on 2021-12-20 with total page 332 pages. Available in PDF, EPUB and Kindle. Book excerpt: Phosphors are often consisting of transition-metal compounds or rare-earth compounds, with the most common application being displays and fluorescent light. This book will guide the reader through the latest developments in thermo-, electro-, mechano- and bioluminescence of rare earth phosphors and crystals. Also, the effect of doping will be discussed.

Gallium Nitride and Related Materials: Volume 395

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Publisher : Materials Research Society
ISBN 13 : 9781558992986
Total Pages : 0 pages
Book Rating : 4.9/5 (929 download)

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Book Synopsis Gallium Nitride and Related Materials: Volume 395 by : R. D. Dupuis

Download or read book Gallium Nitride and Related Materials: Volume 395 written by R. D. Dupuis and published by Materials Research Society. This book was released on 1996-09-04 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reflects the excitement in the scientific community about III-V nitrides. Based on papers presented at the First International Symposium on Gallium Nitride and Related Materials (ISGN-1), it reveals the large amount of work that has taken place since the field exploded with the announcement of commercial blue-light-emitting devices. The compound semiconductors in the III-V nitride systems are of increasing interest for high-performance optoelectronic and electronic device applications. These wide-bandgap semiconductor materials are also of great fundamental scientific interest because of their unique structural, electrical and optical properties. From the advances in the technologies for the heteroepitaxial growth of these materials, leading to improved quality and device performance, it is expected that III-V nitrides will soon be of significant practical and commercial interest. Topics include: crystal growth - substrates and early stages; molecular beam growth techniques; chemical vapor phase and alloys and novel growth techniques; structural properties; electronic properties; optical properties; point defects; hydrogen, etching and other materials processes; surfaces and metal contacts and devices.

Nitride Semiconductors: Volume 482

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ISBN 13 :
Total Pages : 1274 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Nitride Semiconductors: Volume 482 by : Materials Research Society. Meeting

Download or read book Nitride Semiconductors: Volume 482 written by Materials Research Society. Meeting and published by . This book was released on 1998-04-20 with total page 1274 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is on recent experimental and theoretical progress in the rapidly growing field of III-V nitrides. Issues related to crystal growth (bulk and thin films), structure and microstructure, formation of defects, doping, alloying, formation of heterostructures, determination of physical properties and device fabrication and evaluation are addressed. Papers show much progress in the growth and understanding of III-V nitrides and in the production of optoelectronic devices based on these materials. Most exciting is the fact that light-emitting diodes and laser diodes have now reached amazing levels of performance which forecasts a revolution in lighting, optical storage, printing, and display technologies. Topics include: crystal growth- bulk growth, early stages of epitaxy; crystal growth- MOCVD; growth techniques - MBE and HVPE; novel substrates and growth techniques; structural properties; electronic properties; luminescence and recombination; characterization, elemental and stress analysis; physical modelling; device processing, implantation, annealing; device characterization, contacts, degradation; and injection laser diodes and applications.

Ultra-wide Bandgap Semiconductor Materials

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Publisher : Elsevier
ISBN 13 : 0128172568
Total Pages : 503 pages
Book Rating : 4.1/5 (281 download)

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Book Synopsis Ultra-wide Bandgap Semiconductor Materials by : Meiyong Liao

Download or read book Ultra-wide Bandgap Semiconductor Materials written by Meiyong Liao and published by Elsevier. This book was released on 2019-06-18 with total page 503 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride. Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, β-Ga2O3, boron nitrides, and low-dimensional materials Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics

Power GaN Devices

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Publisher : Springer
ISBN 13 : 3319431994
Total Pages : 383 pages
Book Rating : 4.3/5 (194 download)

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Book Synopsis Power GaN Devices by : Matteo Meneghini

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Gallium Oxide

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Publisher : Springer Nature
ISBN 13 : 3030371530
Total Pages : 768 pages
Book Rating : 4.0/5 (33 download)

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Book Synopsis Gallium Oxide by : Masataka Higashiwaki

Download or read book Gallium Oxide written by Masataka Higashiwaki and published by Springer Nature. This book was released on 2020-04-23 with total page 768 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga2O3). Ga2O3 has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga2O3 is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community. Expert chapters cover physical properties, synthesis, and state-of-the-art applications, including materials properties, growth techniques of melt-grown bulk single crystals and epitaxial thin films, and many types of devices. The book is an essential resource for academic and industry readers who have an interest in, or plan to start, a new R&D project related to Ga2O3.

The Physics of Semiconductor Devices

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Publisher : Springer
ISBN 13 : 3319976044
Total Pages : 1299 pages
Book Rating : 4.3/5 (199 download)

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Book Synopsis The Physics of Semiconductor Devices by : R. K. Sharma

Download or read book The Physics of Semiconductor Devices written by R. K. Sharma and published by Springer. This book was released on 2019-01-31 with total page 1299 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community. The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.

Ultrawide Bandgap Semiconductors

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Publisher : Elsevier
ISBN 13 : 0128228709
Total Pages : 480 pages
Book Rating : 4.1/5 (282 download)

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Book Synopsis Ultrawide Bandgap Semiconductors by : Yuji Zhao

Download or read book Ultrawide Bandgap Semiconductors written by Yuji Zhao and published by Elsevier. This book was released on 2021-08-17 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ultrawide Bandgap Semiconductors, Volume 107 in the Semiconductors and Semimetals series, highlights the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices based on gallium oxide, aluminium nitride, boron nitride, and diamond. It includes important topics on the materials growth, characterization, and device applications of UWBG materials, where electronic, photonic, thermal and quantum properties are all thoroughly explored. Contains the latest breakthrough in fundamental science and technology development of ultrawide bandgap (UWBG) semiconductor materials and devices Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization, as well as design and performance characterization of state-of-the-art UWBG materials, structures, and devices Presents an in-depth discussion on electronic, photonic, thermal, and quantum technologies based on UWBG materials

Oxide Electronics

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Publisher : John Wiley & Sons
ISBN 13 : 1119529476
Total Pages : 628 pages
Book Rating : 4.1/5 (195 download)

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Book Synopsis Oxide Electronics by : Asim K. Ray

Download or read book Oxide Electronics written by Asim K. Ray and published by John Wiley & Sons. This book was released on 2021-04-12 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt: Oxide Electronics Multiple disciplines converge in this insightful exploration of complex metal oxides and their functions and properties Oxide Electronics delivers a broad and comprehensive exploration of complex metal oxides designed to meet the multidisciplinary needs of electrical and electronic engineers, physicists, and material scientists. The distinguished author eschews complex mathematics whenever possible and focuses on the physical and functional properties of metal oxides in each chapter. Each of the sixteen chapters featured within the book begins with an abstract and an introduction to the topic, clear explanations are presented with graphical illustrations and relevant equations throughout the book. Numerous supporting references are included, and each chapter is self-contained, making them perfect for use both as a reference and as study material. Readers will learn how and why the field of oxide electronics is a key area of research and exploitation in materials science, electrical engineering, and semiconductor physics. The book encompasses every application area where the functional and electronic properties of various genres of oxides are exploited. Readers will also learn from topics like: Thorough discussions of High-k gate oxide for silicon heterostructure MOSFET devices and semiconductor-dielectric interfaces An exploration of printable high-mobility transparent amorphous oxide semiconductors Treatments of graphene oxide electronics, magnetic oxides, ferroelectric oxides, and materials for spin electronics Examinations of the calcium aluminate binary compound, perovoksites for photovoltaics, and oxide 2Degs Analyses of various applications for oxide electronics, including data storage, microprocessors, biomedical devices, LCDs, photovoltaic cells, TFTs, and sensors Suitable for researchers in semiconductor technology or working in materials science, electrical engineering, and physics, Oxide Electronics will also earn a place in the libraries of private industry researchers like device engineers working on electronic applications of oxide electronics. Engineers working on photovoltaics, sensors, or consumer electronics will also benefit from this book.

Internal Photoemission Spectroscopy

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Publisher : Elsevier
ISBN 13 : 0080999301
Total Pages : 404 pages
Book Rating : 4.0/5 (89 download)

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Book Synopsis Internal Photoemission Spectroscopy by : Valeri V. Afanas'ev

Download or read book Internal Photoemission Spectroscopy written by Valeri V. Afanas'ev and published by Elsevier. This book was released on 2014-02-22 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second edition of Internal Photoemission Spectroscopy thoroughly updates this vital, practical guide to internal photoemission (IPE) phenomena and measurements. The book's discussion of fundamental physical and technical aspects of IPE spectroscopic applications is supplemented by an extended overview of recent experimental results in swiftly advancing research fields. These include the development of insulating materials for advanced SiMOS technology, metal gate materials, development of heterostructures based on high-mobility semiconductors, and more. Recent results concerning the band structure of important interfaces in novel materials are covered as well. Internal photoemission involves the physics of charge carrier photoemission from one solid to another, and different spectroscopic applications of this phenomenon to solid state heterojunctions. This technique complements conventional external photoemission spectroscopy by analyzing interfaces separated from the sample surface by a layer of a different solid or liquid. Internal photoemission provides the most straightforward, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method enables the analysis of heterostructures relevant to modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication. First complete model description of the internal photoemission phenomena Overview of the most reliable energy barrier determination procedures and trap characterization methods Overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces with semiconductors and metals

Phosphor Handbook

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Publisher : CRC Press
ISBN 13 : 1420005235
Total Pages : 1078 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Phosphor Handbook by : Shigeo Shionoya

Download or read book Phosphor Handbook written by Shigeo Shionoya and published by CRC Press. This book was released on 2018-10-03 with total page 1078 pages. Available in PDF, EPUB and Kindle. Book excerpt: A benchmark publication, the first edition of the Phosphor Handbook set the standard for references in this field. Completely revised and updated, this second edition explores new and emerging fields such as nanophosphors, nanomaterials, UV phosphors, quantum cutters, plasma display phosphors, sol-gel and other wet phosphor preparation techniques, preparation through combustion, bioluminescence phosphors and devices, and new laser materials such as OLED. It also contains new chapters on the applications of phosphors in solid state lighting, photoionization of luminescent centers in insulating phosphors, and recent developments in halide-based scintillators. The handbook provides a comprehensive description of phosphors with an emphasis on practical phosphors and their uses in various kinds of technological applications. It covers the fundamentals, namely the basic principles of luminescence, the principle phosphor materials, and their optical properties. The authors describe phosphors used in lamps, cathode-ray tubes, x-ray, and ionizing radiation detection. They cover common measurement methodology used to characterize phosphor properties, discuss a number of related items, and conclude with the history of phosphor technology and industry.

Wide Bandgap Semiconductors

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Publisher : Springer Science & Business Media
ISBN 13 : 3540472355
Total Pages : 481 pages
Book Rating : 4.5/5 (44 download)

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Book Synopsis Wide Bandgap Semiconductors by : Kiyoshi Takahashi

Download or read book Wide Bandgap Semiconductors written by Kiyoshi Takahashi and published by Springer Science & Business Media. This book was released on 2007-04-12 with total page 481 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book offers a comprehensive overview of the development, current state, and future prospects of wide bandgap semiconductor materials and related optoelectronics devices. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap semiconductors and related optoelectronics devices.

Fundamentals of Silicon Carbide Technology

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Publisher : John Wiley & Sons
ISBN 13 : 1118313526
Total Pages : 565 pages
Book Rating : 4.1/5 (183 download)

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Book Synopsis Fundamentals of Silicon Carbide Technology by : Tsunenobu Kimoto

Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-11-24 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.