The Development Of A Nonvolatile Ferroelectric Memeory With Nondestructive Readout

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Development and Investigation of Novel Logic-in-Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide-Based Ferroelectric Field-Effect Transistors

Download Development and Investigation of Novel Logic-in-Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide-Based Ferroelectric Field-Effect Transistors PDF Online Free

Author : Evelyn Tina Breyer
Publisher : BoD – Books on Demand
ISBN 13 : 3755708523
Total Pages : 216 pages
Book Rating : 4.7/5 (557 download)

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Book Synopsis Development and Investigation of Novel Logic-in-Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide-Based Ferroelectric Field-Effect Transistors by : Evelyn Tina Breyer

Download or read book Development and Investigation of Novel Logic-in-Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide-Based Ferroelectric Field-Effect Transistors written by Evelyn Tina Breyer and published by BoD – Books on Demand. This book was released on 2022-02-08 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: Not only conventional computer architectures, such as the von-Neumann architecture with its inevitable von-Neumann bottleneck, but likewise the emerging field of edge computing require to substantially decrease the spatial separation of logic and memory units to overcome power and latency shortages. The integration of logic operations into memory units (Logic-in-Memory), as well as memory elements into logic circuits (Nonvolatile Logic), promises to fulfill this request by combining high-speed with low-power operation. Ferroelectric field-effect transistors (FeFETs) based on hafnium oxide prove to be auspicious candidates for the memory elements in applications of that kind, as those nonvolatile memory elements are CMOS-compatible and likewise scalable. This work presents implementations that merge logic and memory by exploiting the natural capability of the FeFET to combine logic functionality (transistor) and memory ability (nonvolatility).

Development of HfO2-Based Ferroelectric Memories for Future CMOS Technology Nodes

Author : Stefan Ferdinand Müller
Publisher : BoD – Books on Demand
ISBN 13 : 3739248947
Total Pages : 137 pages
Book Rating : 4.7/5 (392 download)

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Book Synopsis Development of HfO2-Based Ferroelectric Memories for Future CMOS Technology Nodes by : Stefan Ferdinand Müller

Download or read book Development of HfO2-Based Ferroelectric Memories for Future CMOS Technology Nodes written by Stefan Ferdinand Müller and published by BoD – Books on Demand. This book was released on 2016-04-08 with total page 137 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis evaluates the viability of ferroelectric Si:HfO2 and its derived FeFET application for non-volatile data storage. At the beginning, the ferroelectric effect is explained briefly such that the applications that make use of it can be understood. Afterwards, the latest findings on ferroelectric HfO2 are reviewed and their potential impact on future applications is discussed. Experimental data is presented afterwards focusing on the ferroelectric material characteristics of Si:HfO2 that are most relevant for memory applications. Besides others, the stability of the ferroelectric switching effect could be demonstrated in a temperature range of almost 400 K. Moreover, nanosecond switching speed and endurance in the range of 1 million to 10 billion cycles could be proven. Retention and imprint characteristics have furthermore been analyzed and are shown to be stable for 1000 hours bake time at 125 oC. Derived from the ferroelectric effect in HfO2, a 28 nm FeFET memory cell is introduced as the central application of this thesis. Based on numerical simulations, the memory concept is explained and possible routes towards an optimized FeFET cell are discussed. Subsequently, the results from electrical characterization of FeFET multi-structures are presented and discussed. By using Si:HfO2 it was possible to realize the world's first 28 nm FeFET devices possessing i.a. 10k cycling endurance and an extrapolated 10 year data retention at room temperature. The next step towards a FeFET memory is represented by connecting several memory cells into matrix-type configurations. A cell concept study illustrates the different ways in which FeFET cells can be combined together to give high density memory arrays. For the proposed architectures, operational schemes are theoretically discussed and analyzed by both electrical characterization of FeFET multi-structures and numerical simulations. The thesis concludes with the electrical characterization of small FeFET memory arrays. First results show that a separation between memory states can be achieved by applying poling and incremental step pulse programming (ISPP) sequences. These results represent an important cornerstone for future studies on Si:HfO2 and its related applications.

Ferroelectric Films

Author : A. S. Bhalla
Publisher :
ISBN 13 :
Total Pages : 490 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Ferroelectric Films by : A. S. Bhalla

Download or read book Ferroelectric Films written by A. S. Bhalla and published by . This book was released on 1992 with total page 490 pages. Available in PDF, EPUB and Kindle. Book excerpt:

NEC Research & Development

Author :
Publisher :
ISBN 13 :
Total Pages : 936 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis NEC Research & Development by :

Download or read book NEC Research & Development written by and published by . This book was released on 1999 with total page 936 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Detector Research And Development For The Superconducting Super Collider - Proceedings Of The Symposium

Author : Valerie Kelly
Publisher : World Scientific
ISBN 13 : 9814569569
Total Pages : 852 pages
Book Rating : 4.8/5 (145 download)

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Book Synopsis Detector Research And Development For The Superconducting Super Collider - Proceedings Of The Symposium by : Valerie Kelly

Download or read book Detector Research And Development For The Superconducting Super Collider - Proceedings Of The Symposium written by Valerie Kelly and published by World Scientific. This book was released on 1991-05-29 with total page 852 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the last three years a significant program of detector technology research and development for high luminosity, high energy hadron-hadron colliders has been underway in the United States, Japan and Europe. In as much as the first formal steps have been undertaken to initiate the experimental program at the Superconducting Super Collider (SSC), it is appropriate to assess in detail the status of this R&D effort.Results and Plans for Advanced Technology R&D for Particle Physics Detectors Appropriate for SSC Experiments are Presented. Specific Topics include: Calorimetry; Particle Tracking and Identification Techniques; Vertex-Detection; Magnets; Front-End Electronics; Data Acquisition Electronics; Techniques in Triggering; Data Transmission; Data Analysis and Simulation Software; Studies on Radiation Damage to Materials and Electronics.

New Topics in Nanotechnology Research

Author : Matthew F. Ginobili
Publisher : Nova Publishers
ISBN 13 : 9781600212918
Total Pages : 268 pages
Book Rating : 4.2/5 (129 download)

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Book Synopsis New Topics in Nanotechnology Research by : Matthew F. Ginobili

Download or read book New Topics in Nanotechnology Research written by Matthew F. Ginobili and published by Nova Publishers. This book was released on 2007 with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanotechnology is a 'catch-all' description of activities at the level of atoms and molecules that have applications in the real world. A manometer is a billionth of a meter, about 1/80,000 of the diameter of a human hair, or 10 times the diameter of a hydrogen atom. Nanotechnology is now used in precision engineering, new materials development as well as in electronics; electromechanical systems as well as mainstream biomedical applications in areas such as gene therapy, drug delivery and novel drug discovery techniques. This book presents the latest research in this frontier field.

Leading-edge Semiconductor Research

Author : Thomas B. Elliot
Publisher : Nova Publishers
ISBN 13 : 9781594545740
Total Pages : 270 pages
Book Rating : 4.5/5 (457 download)

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Book Synopsis Leading-edge Semiconductor Research by : Thomas B. Elliot

Download or read book Leading-edge Semiconductor Research written by Thomas B. Elliot and published by Nova Publishers. This book was released on 2005 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book includes within its scope studies of the structural, electrical, optical and acoustical properties of bulk, low-dimensional and amorphous semiconductors; computational semiconductor physics; interface properties, including the physics and chemistry of heterojunctions, metal-semiconductor and insulator-semiconductor junctions; all multi-layered structures involving semiconductor components. Dopant incorporation. Growth and preparation of materials, including both epitaxial (e.g. molecular beam and chemical vapour methods) and bulk techniques; in situ monitoring of epitaxial growth processes, also included are appropriate aspects of surface science such as the influence of growth kinetics and chemical processing on layer and device properties. The physics of semiconductor electronic and optoelectronic devices are examined , including theoretical modelling and experimental demonstration; all aspects of the technology of semiconductor device and circuit fabrication. Relevant areas of 'molecular electronics' and semiconductor structures incorporating Langmuir-Blodgett films; resists, lithography and metallisation where they are concerned with the definition of small geometry structure. The structural, electrical and optical characterisation of materials and device structures are also included. The scope encompasses materials and device reliability: reliability evaluation of technologies; failure analysis and advanced analysis techniques such as SEM, E-beam, optical emission microscopy, acoustic microscopy techniques; liquid crystal techniques; noise measurement, reliability prediction and simulation; reliability indicators; failure mechanisms, including charge migration, trapping, oxide breakdown, hot carrier effects, electro-migration, stress migration; package- related failure mechanisms; effects of operational and environmental stresses on reliability.

Advances in Non-volatile Memory and Storage Technology

Author : Yoshio Nishi
Publisher : Woodhead Publishing
ISBN 13 : 0081025858
Total Pages : 664 pages
Book Rating : 4.0/5 (81 download)

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Book Synopsis Advances in Non-volatile Memory and Storage Technology by : Yoshio Nishi

Download or read book Advances in Non-volatile Memory and Storage Technology written by Yoshio Nishi and published by Woodhead Publishing. This book was released on 2019-06-15 with total page 664 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3D memory. Finally, to further widen the discussion on the applications space, neuromorphic computing aspects have been included. This book is a key resource for postgraduate students and academic researchers in physics, materials science and electrical engineering. In addition, it will be a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials and portable electronic devices. - Discusses emerging devices and research trends, such as neuromorphic computing and oxide-based ferroelectric memories - Provides an overview on developing nonvolatile memory and storage technologies and explores their strengths and weaknesses - Examines improvements to flash technology, charge trapping and resistive random access memory

Handbook of Semiconductors

Author : Ram K. Gupta
Publisher : CRC Press
ISBN 13 : 1040040926
Total Pages : 396 pages
Book Rating : 4.0/5 (4 download)

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Book Synopsis Handbook of Semiconductors by : Ram K. Gupta

Download or read book Handbook of Semiconductors written by Ram K. Gupta and published by CRC Press. This book was released on 2024-07-10 with total page 396 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with state-of-the-art knowledge of established and emerging semiconducting materials, their processing, and the fabrication of chips and microprocessors. In addition to covering the fundamentals of these materials, it details the basics and workings of many semiconducting devices and their role in modern electronics and explores emerging semiconductors and their importance in future devices. • Provides readers with latest advances in semiconductors. • Covers diodes, transistors, and other devices using semiconducting materials. • Covers advances and challenges in semiconductors and their technological applications. • Discusses fundamentals and characteristics of emerging semiconductors for chip manufacturing. This book provides directions to scientists, engineers, and researchers in materials engineering and related disciplines to help them better understand the physics, characteristics, and applications of modern semiconductors.

Ferroelectric-Gate Field Effect Transistor Memories

Author : Byung-Eun Park
Publisher : Springer
ISBN 13 : 940240841X
Total Pages : 350 pages
Book Rating : 4.4/5 (24 download)

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Book Synopsis Ferroelectric-Gate Field Effect Transistor Memories by : Byung-Eun Park

Download or read book Ferroelectric-Gate Field Effect Transistor Memories written by Byung-Eun Park and published by Springer. This book was released on 2016-09-02 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among the various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has progressed most actively since the late 1980s and has achieved modest mass production levels for specific applications since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide readers with the development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass or plastic substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.

Nanoscale Ferroelectrics and Multiferroics

Author : Miguel Alguero
Publisher : John Wiley & Sons
ISBN 13 : 1118935756
Total Pages : 994 pages
Book Rating : 4.1/5 (189 download)

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Book Synopsis Nanoscale Ferroelectrics and Multiferroics by : Miguel Alguero

Download or read book Nanoscale Ferroelectrics and Multiferroics written by Miguel Alguero and published by John Wiley & Sons. This book was released on 2016-05-31 with total page 994 pages. Available in PDF, EPUB and Kindle. Book excerpt: Dieses Buch beleuchtet die wichtigsten Aspekte der Verarbeitung und Charakterisierung von Ferroelektrika und Multiferroika auf Nanoebene, präsentiert eine umfassende Beschreibung der jeweiligen Eigenschaften und legt dabei den Schwerpunkt auf die Unterscheidung von Größeneffekten bei extrinsischen Eigenschaften wie Rand- oder Interface-Effekte. Eingegangen wird auch auf neuartige Nanoebene. Das Fachbuch ist in drei Abschnitte unterteilt und beschreibt die Verarbeitung (Nanostrukturierung), Charakterisierung (nanostrukturierter Materialien) und Nanoeffekte. Unter Rückgriff auf die Synergien zwischen Nano-Ferroelektrika und -Multiferroika werden Materialien behandelt, die auf allen Ebenen einer Nanostrukturierung unterzogen werden, von Technologien für keramische Materialien wie ferroelektrische Nanopulver, nanostrukturierte Keramiken und Dickschichten sowie magnetoelektrische Nanokomposit-Materialien bis hin zu freistehenden Nanoobjekten mit spezifischen Geometrien wie Nanodrähte und Nanoröhren auf verschiedenen Entwicklungsstufen. Grundlage des Buches ist die europäische Wissensplattform im Wissenschaftsbereich innerhalb der Aktion von COST (Europäische Zusammenarbeit in Wissenschaft und Technik) zu ein- und mehrphasigen Ferroika und Multiferroika mit begrenzten Geometrien (SIMUFER, Ref. MP0904). Die Autoren der Kapitelbeiträge wurden sorgfältig ausgewählt, haben allesamt ganz wesentlich zur Wissensbasis für das jeweilige Thema beigetragen und gehören vor allem zu den renommiertesten Wissenschaftlern des Fachgebiets.

Ferroelectrics

Author : Ashim Kumar Bain
Publisher : John Wiley & Sons
ISBN 13 : 3527342141
Total Pages : 326 pages
Book Rating : 4.5/5 (273 download)

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Book Synopsis Ferroelectrics by : Ashim Kumar Bain

Download or read book Ferroelectrics written by Ashim Kumar Bain and published by John Wiley & Sons. This book was released on 2017-06-19 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt: Combining both fundamental principles and real-life applications in a single volume, this book discusses the latest research results in ferroelectrics, including many new ferroelectric materials for the latest technologies, such as capacitors, transducers and memories. The first two chapters introduce dielectrics and microscopic materials properties, while the following chapter discusses pyroelectricity and piezoelectricity. The larger part of the text is devoted to ferroelectricity and ferroelectric ceramics, with not only their fundamentals but also applications discussed. The book concludes with a look at the future for laser printed materials and applications. With over 600 references to recent publications on piezoelectric and ferroelectric materials, this is an invaluable reference for physicists, materials scientists and engineers.

... International Symposium on Integrated Ferroelectrics

Author :
Publisher :
ISBN 13 :
Total Pages : 704 pages
Book Rating : 4.0/5 ( download)

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Book Synopsis ... International Symposium on Integrated Ferroelectrics by :

Download or read book ... International Symposium on Integrated Ferroelectrics written by and published by . This book was released on 1991 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Advanced Materials and Technologies for Micro/Nano-Devices, Sensors and Actuators

Author : Evgeni Gusev
Publisher : Springer Science & Business Media
ISBN 13 : 9048138051
Total Pages : 310 pages
Book Rating : 4.0/5 (481 download)

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Book Synopsis Advanced Materials and Technologies for Micro/Nano-Devices, Sensors and Actuators by : Evgeni Gusev

Download or read book Advanced Materials and Technologies for Micro/Nano-Devices, Sensors and Actuators written by Evgeni Gusev and published by Springer Science & Business Media. This book was released on 2010-03-15 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt: A NATO Advanced Research Workshop (ARW) entitled “Advanced Materials and Technologies for Micro/Nano Devices, Sensors and Actuators” was held in St. Petersburg, Russia, from June 29 to July 2, 2009. The main goal of the Workshop was to examine (at a fundamental level) the very complex scientific issues that pertain to the use of micro- and nano-electromechanical systems (MEMS and NEMS), devices and technologies in next generation commercial and defen- related applications. Micro- and nano-electromechanical systems represent rather broad and diverse technological areas, such as optical systems (micromirrors, waveguides, optical sensors, integrated subsystems), life sciences and lab equipment (micropumps, membranes, lab-on-chip, membranes, microfluidics), sensors (bio-sensors, chemical sensors, gas-phase sensors, sensors integrated with electronics) and RF applications for signal transmission (variable capacitors, tunable filters and antennas, switches, resonators). From a scientific viewpoint, this is a very multi-disciplinary field, including micro- and nano-mechanics (such as stresses in structural materials), electronic effects (e. g. charge transfer), general electrostatics, materials science, surface chemistry, interface science, (nano)tribology, and optics. It is obvious that in order to overcome the problems surrounding next-generation MEMS/NEMS devices and applications it is necessary to tackle them from different angles: theoreticians need to speak with mechanical engineers, and device engineers and modelers to listen to surface physicists. It was therefore one of the main objectives of the workshop to bring together a multidisciplinary team of distinguished researchers.

VLSI Memory Chip Design

Author : Kiyoo Itoh
Publisher : Springer Science & Business Media
ISBN 13 : 3662044781
Total Pages : 504 pages
Book Rating : 4.6/5 (62 download)

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Book Synopsis VLSI Memory Chip Design by : Kiyoo Itoh

Download or read book VLSI Memory Chip Design written by Kiyoo Itoh and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt: A systematic description of microelectronic device design. Topics range from the basics to low-power and ultralow-voltage designs, subthreshold current reduction, memory subsystem designs for modern DRAMs, and various on-chip supply-voltage conversion techniques. It also covers process and device issues as well as design issues relating to systems, circuits, devices and processes, such as signal-to-noise and redundancy.

Scientific and Technical Aerospace Reports

Author :
Publisher :
ISBN 13 :
Total Pages : 440 pages
Book Rating : 4.:/5 (3 download)

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Book Synopsis Scientific and Technical Aerospace Reports by :

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Gate Stack Engineering for Emerging Polarization based Non-volatile Memories

Author : Milan Pesic
Publisher : BoD – Books on Demand
ISBN 13 : 3744867889
Total Pages : 154 pages
Book Rating : 4.7/5 (448 download)

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Book Synopsis Gate Stack Engineering for Emerging Polarization based Non-volatile Memories by : Milan Pesic

Download or read book Gate Stack Engineering for Emerging Polarization based Non-volatile Memories written by Milan Pesic and published by BoD – Books on Demand. This book was released on 2017-07-14 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: The hafnium based ferroelectric memories offer a low power consumption, ultra-fast operation, non-volatile retention as well as the small relative cell size as the main requirements for future memories. These remarkable properties of ferroelectric memories make them promising candidates for non-volatile memories that would bridge the speed gap between fast logic and slow off-chip, long term storage. Even though the retention of hafnia based ferroelectric memories can be extrapolated to a ten-year specification target, they suffer from a rather limited endurance. Therefore, this work targets relating the field cycling behavior of hafnia based ferroelectric memories to the physical mechanisms taking place within the film stack. Establishing a correlation between the performance of the device and underlying physical mechanisms is the first step toward understanding the device and engineering guidelines for novel, superior devices. In the frame of this work, an in-depth ferroelectric and dielectric characterization, analysis and TEM study was combined with comprehensive modeling approach. Drift and diffusion based vacancy redistribution was found as the main cause for the phase transformation and consequent increase of the remnant polarization, while domain pinning and defect generation is identified to be responsible for the device fatigue. Finally, based on Landau theory, a simple way to utilize the high endurance strength of anti-ferroelectric (AFE) materials and achieve non-volatility in state-of-the-art DRAM stacks was proposed and the fabrication of the world's first non-volatile AFE-RAM is reported. These findings represent an important milestone and pave the way toward a commercialization of (anti)ferroelectric non-volatile memories based on simple binary-oxides.