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Substrate Current Optimization In Smart Power Ics
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Book Synopsis Substrate Current Optimization in Smart Power ICs by : Pietro Buccella
Download or read book Substrate Current Optimization in Smart Power ICs written by Pietro Buccella and published by . This book was released on 2016 with total page 161 pages. Available in PDF, EPUB and Kindle. Book excerpt: Mots-clés de l'auteur: smart Power IC ; substrate extraction ; high-voltage layout optimization ; substrate current couplings ; passive and active protections.
Book Synopsis Substrate Current Effects in Smart Power ICs by : Michael Schenkel
Download or read book Substrate Current Effects in Smart Power ICs written by Michael Schenkel and published by . This book was released on 2003 with total page 165 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Smart Power ICs written by Bruno Murari and published by Springer Science & Business Media. This book was released on 2002-06-13 with total page 598 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a survey of the state of the art of technology and future trends in the new family of Smart Power ICs and describes design and applications in a variety of fields ranging from automotive to telecommunications, reliability evaluation and qualification procedures. The book is a valuable source of information and reference for both power IC design specialists and to all those concerned with applications, the development of digital circuits and with system architecture.
Download or read book Latchup written by Steven H. Voldman and published by John Wiley & Sons. This book was released on 2008-04-15 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Interest in latchup is being renewed with the evolution of complimentary metal-oxide semiconductor (CMOS) technology, metal-oxide-semiconductor field-effect transistor (MOSFET) scaling, and high-level system-on-chip (SOC) integration. Clear methodologies that grant protection from latchup, with insight into the physics, technology and circuit issues involved, are in increasing demand. This book describes CMOS and BiCMOS semiconductor technology and their sensitivity to present day latchup phenomena, from basic over-voltage and over-current conditions, single event latchup (SEL) and cable discharge events (CDE), to latchup domino phenomena. It contains chapters focusing on bipolar physics, latchup theory, latchup and guard ring characterization structures, characterization testing, product level test systems, product level testing and experimental results. Discussions on state-of-the-art semiconductor processes, design layout, and circuit level and system level latchup solutions are also included, as well as: latchup semiconductor process solutions for both CMOS to BiCMOS, such as shallow trench, deep trench, retrograde wells, connecting implants, sub-collectors, heavily-doped buried layers, and buried grids – from single- to triple-well CMOS; practical latchup design methods, automated and bench-level latchup testing methods and techniques, latchup theory of logarithm resistance space, generalized alpha (a) space, beta (b) space, new latchup design methods– connecting the theoretical to the practical analysis, and; examples of latchup computer aided design (CAD) methodologies, from design rule checking (DRC) and logical-to-physical design, to new latchup CAD methodologies that address latchup for internal and external latchup on a local as well as global design level. Latchup acts as a companion text to the author’s series of books on ESD (electrostatic discharge) protection, serving as an invaluable reference for the professional semiconductor chip and system-level ESD engineer. Semiconductor device, process and circuit designers, and quality, reliability and failure analysis engineers will find it informative on the issues that confront modern CMOS technology. Practitioners in the automotive and aerospace industries will also find it useful. In addition, its academic treatment will appeal to both senior and graduate students with interests in semiconductor process, device physics, computer aided design and design integration.
Download or read book ESD written by Steven H. Voldman and published by John Wiley & Sons. This book was released on 2009-07-01 with total page 411 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electrostatic discharge (ESD) failure mechanisms continue to impact semiconductor components and systems as technologies scale from micro- to nano-electronics. This book studies electrical overstress, ESD, and latchup from a failure analysis and case-study approach. It provides a clear insight into the physics of failure from a generalist perspective, followed by investigation of failure mechanisms in specific technologies, circuits, and systems. The book is unique in covering both the failure mechanism and the practical solutions to fix the problem from either a technology or circuit methodology. Look inside for extensive coverage on: failure analysis tools, EOS and ESD failure sources and failure models of semiconductor technology, and how to use failure analysis to design more robust semiconductor components and systems; electro-thermal models and technologies; the state-of-the-art technologies discussed include CMOS, BiCMOS, silicon on insulator (SOI), bipolar technology, high voltage CMOS (HVCMOS), RF CMOS, smart power, gallium arsenide (GaAs), gallium nitride (GaN), magneto-resistive (MR) , giant magneto-resistors (GMR), tunneling magneto-resistor (TMR), devices; micro electro-mechanical (MEM) systems, and photo-masks and reticles; practical methods to use failure analysis for the understanding of ESD circuit operation, temperature analysis, power distribution, ground rule development, internal bus distribution, current path analysis, quality metrics, (connecting the theoretical to the practical analysis); the failure of each key element of a technology from passives, active elements to the circuit, sub-system to package, highlighted by case studies of the elements, circuits and system-on-chip (SOC) in today’s products. ESD: Failure Mechanisms and Models is a continuation of the author’s series of books on ESD protection. It is an essential reference and a useful insight into the issues that confront modern technology as we enter the Nano-electronic era.
Book Synopsis The ESD Handbook by : Steven H. Voldman
Download or read book The ESD Handbook written by Steven H. Voldman and published by John Wiley & Sons. This book was released on 2021-03-02 with total page 1168 pages. Available in PDF, EPUB and Kindle. Book excerpt: A practical and comprehensive reference that explores Electrostatic Discharge (ESD) in semiconductor components and electronic systems The ESD Handbook offers a comprehensive reference that explores topics relevant to ESD design in semiconductor components and explores ESD in various systems. Electrostatic discharge is a common problem in the semiconductor environment and this reference fills a gap in the literature by discussing ESD protection. Written by a noted expert on the topic, the text offers a topic-by-topic reference that includes illustrative figures, discussions, and drawings. The handbook covers a wide-range of topics including ESD in manufacturing (garments, wrist straps, and shoes); ESD Testing; ESD device physics; ESD semiconductor process effects; ESD failure mechanisms; ESD circuits in different technologies (CMOS, Bipolar, etc.); ESD circuit types (Pin, Power, Pin-to-Pin, etc.); and much more. In addition, the text includes a glossary, index, tables, illustrations, and a variety of case studies. Contains a well-organized reference that provides a quick review on a range of ESD topics Fills the gap in the current literature by providing information from purely scientific and physical aspects to practical applications Offers information in clear and accessible terms Written by the accomplished author of the popular ESD book series Written for technicians, operators, engineers, circuit designers, and failure analysis engineers, The ESD Handbook contains an accessible reference to ESD design and ESD systems.
Book Synopsis Parasitic Substrate Coupling in High Voltage Integrated Circuits by : Pietro Buccella
Download or read book Parasitic Substrate Coupling in High Voltage Integrated Circuits written by Pietro Buccella and published by Springer. This book was released on 2018-03-14 with total page 195 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book introduces a new approach to model and predict substrate parasitic failures in integrated circuits with standard circuit design tools. The injection of majority and minority carriers in the substrate is a recurring problem in smart power ICs containing high voltage, high current switching devices besides sensitive control, protection and signal processing circuits. The injection of parasitic charges leads to the activation of substrate bipolar transistors. This book explores how these events can be evaluated for a wide range of circuit topologies. To this purpose, new generalized devices implemented in Verilog-A are used to model the substrate with standard circuit simulators. This approach was able to predict for the first time the activation of a latch-up in real circuits through post-layout SPICE simulation analysis. Discusses substrate modeling and circuit-level simulation of parasitic bipolar device coupling effects in integrated circuits; Includes circuit back-annotation of the parasitic lateral n-p-n and vertical p-n-p bipolar transistors in the substrate; Uses Spice for simulation and characterization of parasitic bipolar transistors, latch-up of the parasitic p-n-p-n structure, and electrostatic discharge (ESD) protection devices; Offers design guidelines to reduce couplings by adding specific protections.
Book Synopsis Smart Power Integration by : Mohamed Abouelatta
Download or read book Smart Power Integration written by Mohamed Abouelatta and published by John Wiley & Sons. This book was released on 2022-09-14 with total page 324 pages. Available in PDF, EPUB and Kindle. Book excerpt: Smart power integration is at the crossroads of different fields of electronics such as high and low power, engine control and electrothermal studies of devices and circuits. These circuits are complex and are heavily influenced by substrate coupling, especially where 3D integration is concerned. This book provides an overview of smart power integration, including high voltage devices, dedicated and compatible processes, as well as isolation techniques. Two types of integration are highlighted: modular or hybrid integration, together with compatible devices such as the insulated gate bipolar transistor (IGBT); and monolithic integration, specifically through the paradigm of functional integration. Smart Power Integration outlines the main MOS devices for high voltage integrated circuits, and explores into the fields of codesign, coupling hardware and software design, including applications to motor control. Studies focusing on heat pipes for electronics cooling are also outlined.
Book Synopsis ESD Protection Device and Circuit Design for Advanced CMOS Technologies by : Oleg Semenov
Download or read book ESD Protection Device and Circuit Design for Advanced CMOS Technologies written by Oleg Semenov and published by Springer Science & Business Media. This book was released on 2008-04-26 with total page 237 pages. Available in PDF, EPUB and Kindle. Book excerpt: ESD Protection Device and Circuit Design for Advanced CMOS Technologies is intended for practicing engineers working in the areas of circuit design, VLSI reliability and testing domains. As the problems associated with ESD failures and yield losses become significant in the modern semiconductor industry, the demand for graduates with a basic knowledge of ESD is also increasing. Today, there is a significant demand to educate the circuits design and reliability teams on ESD issues. This book makes an attempt to address the ESD design and implementation in a systematic manner. A design procedure involving device simulators as well as circuit simulator is employed to optimize device and circuit parameters for optimal ESD as well as circuit performance. This methodology, described in ESD Protection Device and Circuit Design for Advanced CMOS Technologies has resulted in several successful ESD circuit design with excellent silicon results and demonstrates its strengths.
Book Synopsis Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs by :
Download or read book Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs written by and published by . This book was released on 2005 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Proceedings of the Symposium on High Voltage and Smart Power ICs by : Muhammed Ayman Shibib
Download or read book Proceedings of the Symposium on High Voltage and Smart Power ICs written by Muhammed Ayman Shibib and published by . This book was released on 1989 with total page 558 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Substrate Current Modeling for High Temperature Smart Power BCD Technology by : Fabrizio Lo Conte
Download or read book Substrate Current Modeling for High Temperature Smart Power BCD Technology written by Fabrizio Lo Conte and published by . This book was released on 2012 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Integrated Circuit and System Design. Power and Timing Modeling, Optimization and Simulation by : Lars Svensson
Download or read book Integrated Circuit and System Design. Power and Timing Modeling, Optimization and Simulation written by Lars Svensson and published by Springer. This book was released on 2009-01-30 with total page 474 pages. Available in PDF, EPUB and Kindle. Book excerpt: Welcome to the proceedings of PATMOS 2008, the 18th in a series of int- national workshops. PATMOS 2008 was organized by INESC-ID / IST - TU Lisbon, Portugal, with sponsorship by Cadence, IBM, Chipidea, and Tecmic, and technical co-sponsorship by the IEEE. Over the years, PATMOS has evolved into an important European event, where researchers from both industry and academia discuss and investigate the emerging challenges in future and contemporary applications, design meth- ologies, and tools required for the development of the upcoming generations of integrated circuits and systems. The technical program of PATMOS 2008 c- tained state-of-the-art technical contributions, three invited talks, and a special session on recon?gurable architectures. The technical program focused on t- ing, performance and power consumption, as well as architectural aspects with particular emphasis on modeling, design, characterization, analysis and op- mization in the nanometer era. The Technical Program Committee, with the assistance of additional expert reviewers, selected the 41 papers presented at PATMOS. The papers were - ganized into 7 oral sessions (with a total of 31 papers) and 2 poster sessions (with a total of 10 papers). As is customary for the PATMOS workshops, full papers were required for review, and a minimum of three reviews were received per manuscript.
Book Synopsis Crystalline Defects and Contamination by : Bernd O. Kolbesen
Download or read book Crystalline Defects and Contamination written by Bernd O. Kolbesen and published by The Electrochemical Society. This book was released on 2001 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electronic Engine Control Technologies by : Ronald K Jurgen
Download or read book Electronic Engine Control Technologies written by Ronald K Jurgen and published by SAE International. This book was released on 2004-03-13 with total page 770 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this second edition of Electronic Engine Control Technologies, the latest advances and technologies of electronic engine control are explored in a collection of 99 technical papers, none of which were included in the book's first edition. Editor Ronald K. Jurgen offers an informative introduction, "Neural Networks on the Rise," clearly explaining the book's overall format and layout. The book then closely examines the many areas surrounding electronic engine control technologies, including: specific engine controls, diagnostics, engine modeling, innovative solid-state hardware and software systems, communication techniques for engine control, neural network applications, and the future of electronic engine controls.
Book Synopsis Integrated Power Devices and TCAD Simulation by : Yue Fu
Download or read book Integrated Power Devices and TCAD Simulation written by Yue Fu and published by CRC Press. This book was released on 2017-12-19 with total page 366 pages. Available in PDF, EPUB and Kindle. Book excerpt: From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems. Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs). Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems.