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Author : Martin M. Sokoloski
Publisher :
ISBN 13 :
Total Pages : 28 pages
Book Rating : 4.:/5 (31 download)
Download or read book Structure and Kinetics of Defects in Silicon written by Martin M. Sokoloski and published by . This book was released on 1967 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Edmund G. Seebauer
Publisher : Springer Science & Business Media
ISBN 13 : 1848820593
Total Pages : 304 pages
Book Rating : 4.8/5 (488 download)
Download or read book Charged Semiconductor Defects written by Edmund G. Seebauer and published by Springer Science & Business Media. This book was released on 2008-11-14 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.
Author : V. I. Talanin
Publisher : Cambridge Scholars Publishing
ISBN 13 : 152752342X
Total Pages : 281 pages
Book Rating : 4.5/5 (275 download)
Download or read book The Formation of Structural Imperfections in Semiconductor Silicon written by V. I. Talanin and published by Cambridge Scholars Publishing. This book was released on 2018-12-14 with total page 281 pages. Available in PDF, EPUB and Kindle. Book excerpt: Today, it is difficult to imagine all spheres of human activity without personal computers, solid-state electronic devices, micro- and nanoelectronics, photoconverters, and mobile communication devices. The basic material of modern electronics and for all of these industries is semiconductor silicon. Its properties and applications are determined by defects in its crystal structure. However, until now, there has been no complete and reliable description of the creation and transformation of such a defective structure. This book solves this mystery through two different approaches to semiconductor silicon: the classical and the probabilistic. This book brings together, for the first time, all existing experimental and theoretical information on the internal structure of semiconductor silicon. It will appeal to a wide range of readers, from materials scientists and practical engineers to students.
Author : Peter Pichler
Publisher : Springer Science & Business Media
ISBN 13 : 3709105978
Total Pages : 576 pages
Book Rating : 4.7/5 (91 download)
Download or read book Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Author : Boyd Rogers
Publisher :
ISBN 13 :
Total Pages : 346 pages
Book Rating : 4.:/5 (195 download)
Download or read book The Kinetics of Intrinsic Point Defects at Silicon/oxide and Silicon/nitride Interfaces written by Boyd Rogers and published by . This book was released on 1988 with total page 346 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Yutaka Yoshida
Publisher : Springer
ISBN 13 : 4431558004
Total Pages : 498 pages
Book Rating : 4.4/5 (315 download)
Download or read book Defects and Impurities in Silicon Materials written by Yutaka Yoshida and published by Springer. This book was released on 2016-03-30 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.
Author : Albertus M. Beers
Publisher :
ISBN 13 :
Total Pages : 128 pages
Book Rating : 4.:/5 (252 download)
Download or read book Structure and kinetics in the chemical vapour deposition of silicon written by Albertus M. Beers and published by . This book was released on 1983 with total page 128 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : W. Murray Bullis
Publisher :
ISBN 13 :
Total Pages : 716 pages
Book Rating : 4.:/5 (44 download)
Download or read book Proceedings of the Second Symposium on Defects in Silicon written by W. Murray Bullis and published by . This book was released on 1991 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Jie Zheng
Publisher :
ISBN 13 : 9789038623962
Total Pages : 172 pages
Book Rating : 4.6/5 (239 download)
Download or read book Atomic Hydrogen Induced Defects in Amorphous Silicon written by Jie Zheng and published by . This book was released on 2010 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: The motivation of this thesis is to provide quantitative insights into the microscopic interaction mechanisms between atomic hydrogen and hydrogenated amorphous silicon (a-Si:H), particularly the evolution kinetics of the electronic defect states during the interaction. a-Si:H thin films are grown on the total internal reflection surface of a folded miniature optical resonator by thermal decomposition of SiH4 on a hotwire, and are subjected to quantified atomic H fluxes at various substrate temperature. The H-induced defects during the process is monitored in situ by the Evanescent-Wave Cavity Ring-Down Spectroscopy (EW-CRDS), which allows to study the kinetics with a time resolution of 33 ms and sensitivity up to 0.1 ppm in the defect absorption change. The defect evolution process is characterized by a fast increase to a steady state when the H flux is turn on and reversible healing after the H flux is turned off. The effects of the H flux, substrate temperature, film structure and film thickness on the defect evolution process are investigated.
Author : C. S. Murthy
Publisher : The Electrochemical Society
ISBN 13 : 9781566772242
Total Pages : 244 pages
Book Rating : 4.7/5 (722 download)
Download or read book Proceedings of the Fifth International Symposium of Process Physics and Modeling in Semiconductor Technology written by C. S. Murthy and published by The Electrochemical Society. This book was released on 1999 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Yi Xu
Publisher :
ISBN 13 :
Total Pages : 139 pages
Book Rating : 4.:/5 (93 download)
Download or read book Structure and Chemistry of Defect Passivation at the Interface Between Silicon Dioxide and Silicon Carbide written by Yi Xu and published by . This book was released on 2014 with total page 139 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon carbide (SiC) is a wide bandgap semiconductor which has material properties well-suited for high-power, high-temperature electronics applications. The performance of SiC transistors is limited by electrical defects formed at the SiO2/SiC interface under high temperature oxidation. A central goal of this work is to improve our atomic level understanding of electrical defects in SiC devices, and to further develop methods to minimize defects. Introduction of interfacial nitrogen (N) or phosphorus (P) reduces the interface (charge) trap density, increases the SiC charge mobility (in the semiconductor channel), and thus device performance. This dissertation is focused on the chemistry of the SiO2/SiC interface, the critical interface in future SiC-based devices. We address issues of composition, structure, chemical bonding, and reaction behavior of N and P that we have used to improve device performance. We report photoemission and ion scattering studies to determine the concentrations of N and P passivating agents at the SiO2/SiC interface, and develop a more complete understanding of the mechanism and kinetics for the passivation processes on different crystallographic surfaces. The study shows that N (and P) passivated SiO2/SiC structures have a thin oxy-nitride (oxy-phosphide) interface dielectric layer that cannot be removed by a buffered HF etchant. The same dielectric structures are completely etched when formed on Si. Atomic scale modeling, combined with our experimental observations, results in the suggestion of likely bonding structures of N and P at the SiO2/SiC interface. The depth profile of N and P at SiO2/SiC interface has also been established and provides further insights into the nature of N and P as surface passivating additives.
Author : J. Chikawa
Publisher : Springer
ISBN 13 : 9789401086165
Total Pages : 300 pages
Book Rating : 4.0/5 (861 download)
Download or read book Defects and Properties of Semiconductors written by J. Chikawa and published by Springer. This book was released on 2011-12-25 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains nearly all of the papers presented at the Symposium on "Defects and Qualities of Semiconductors" which was held in Tokyo on May 17-18, 1984, under the sponsorship of the SOCIETY OF NON-TRADITIONAL TECHNOLOGY. The Symposium was organized by the promoting committee of the research project "Quality Developement of Semiconductors by Utilization of Crystal Defects" sponsored by the Science and Technology Agency of Japan. Defect study in semiconductor engineering started originally with seeking methods how to suppress generation of harmful defects during device processing in order to achieve a high yield of device fabrication. Recently, a new trend has appeared in which crystal defects are positively utilized to improve the device performance and reliability. A typical example is the intrinsic gettering technique for Czochralski silicon. Thus, a new term "DEFECT ENGINEERING" was born. It is becoming more important to control density and distribution of defects than to eliminate all the defects. Very precise and deep knowledge on defects is required to establish such techniques as generation and development of defects desired depending on type of devices and degree of integration. Electrical, optical and mechanical effects of defects should be also understood correctly. Such knowledge is essential even for eliminating defects from some specified device regions. It is the time now to investigate defect properties and defect kinetics in an energetic way. From this point of view, all the speakers in this symposium were invited among the most active investigators in the field of defect engineering in Japan.
Author : Stefan Rein
Publisher : Springer Science & Business Media
ISBN 13 : 3540279229
Total Pages : 513 pages
Book Rating : 4.5/5 (42 download)
Download or read book Lifetime Spectroscopy written by Stefan Rein and published by Springer Science & Business Media. This book was released on 2005-11-25 with total page 513 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lifetime spectroscopy is one of the most sensitive diagnostic tools for the identification and analysis of impurities in semiconductors. Since it is based on the recombination process, it provides insight into precisely those defects that are relevant to semiconductor devices such as solar cells. This book introduces a transparent modeling procedure that allows a detailed theoretical evaluation of the spectroscopic potential of the different lifetime spectroscopic techniques. The various theoretical predictions are verified experimentally with the context of a comprehensive study on different metal impurities. The quality and consistency of the spectroscopic results, as explained here, confirms the excellent performance of lifetime spectroscopy.
Author : Sergio Pizzini
Publisher : Scitec Publications
ISBN 13 :
Total Pages : 440 pages
Book Rating : 4.3/5 (91 download)
Download or read book Defect Interaction and Clustering in Semiconductors written by Sergio Pizzini and published by Scitec Publications. This book was released on 2002 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern semiconductor devices rely upon precise defect engineering. On the one hand: defects are the components needed to generate the electronic architecture of the device. On the other hand: they may - if not carefully controlled- induce failure of that device. During the past fifty years, the electrical and optical properties of defects, their generation, transport, clustering and reactions between them have been investigated intensively. Yet the development of semiconductor technology remains closely connected to the advances made in defect science and engineering. Compared to metals, defect control in silicon is significantly complicated by the open structure of its lattice. As a result, reactions between defects, even at room temperature, have become a central issue in defect engineering.
Author : Lisa Echeverria Benatar
Publisher :
ISBN 13 :
Total Pages : 286 pages
Book Rating : 4.:/5 (387 download)
Download or read book Kinetics of Light-induced Metastable Defect Formation in Hydrogenated Amorphous Silicon written by Lisa Echeverria Benatar and published by . This book was released on 1993 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Gianfranco Pacchioni
Publisher : Springer Science & Business Media
ISBN 13 : 9401009449
Total Pages : 619 pages
Book Rating : 4.4/5 (1 download)
Download or read book Defects in SiO2 and Related Dielectrics: Science and Technology written by Gianfranco Pacchioni and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 619 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.
Author : B. Henderson
Publisher : Springer Science & Business Media
ISBN 13 : 1468428020
Total Pages : 502 pages
Book Rating : 4.4/5 (684 download)
Download or read book Defects and Their Structure in Nonmetallic Solids written by B. Henderson and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 502 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Advanced Study Institute of which this volume is the proceedings was held at the University of Exeter during 24 August to 6 September 1975. There were seventy participants of whom eighteen were lecturers and members of the advisory committee. All NATO countries except Holland, Iceland and Portugal were re presented. In addition a small number of participants came from non-NATO countries Japan, Ireland and Switzerland. An aim of the organising committee was to bring together scientists of wide interests and expertise in the defect structure of insulators and semiconductors. Thus major emphases in the pro gramme concerned the use of spectroscopy and microscopy in revealing the structure of point defects and their aggregates, line defects as well as planar and volume defects. The lectures revealed that in general little is known of the fate of the interstitial in most irradiated solids. Nor are the dynamic properties of defects under stood in sufficient detail that one can state how point defects cluster and eventually become macroscopic defects. Although this book faithfully reproduces the material covered by the invited speakers, it does not really follow the flow of the lectures. This is because it seemed advisable for each lecturer to provide a single self-contained and authoritative manuscript, rather than a series of short articles corresponding to the lectures.
