Defect Interaction And Clustering In Semiconductors

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Defect Interaction and Clustering in Semiconductors

Author : Sergio Pizzini
Publisher : Trans Tech Publications Ltd
ISBN 13 : 3035707081
Total Pages : 370 pages
Book Rating : 4.0/5 (357 download)

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Book Synopsis Defect Interaction and Clustering in Semiconductors by : Sergio Pizzini

Download or read book Defect Interaction and Clustering in Semiconductors written by Sergio Pizzini and published by Trans Tech Publications Ltd. This book was released on 2001-12-12 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern semiconductor devices rely upon precise defect engineering. On the one hand: defects are the components needed to generate the electronic architecture of the device. On the other hand: they may if not carefully controlled induce failure of that device. During the past fifty years, the electrical and optical properties of defects, their generation, transport, clustering and reactions between them have been investigated intensively. Yet the development of semiconductor technology remains closely connected to the advances made in defect science and engineering. Compared to metals, defect control in silicon is significantly complicated by the open structure of its lattice. As a result, reactions between defects, even at room temperature, have become a central issue in defect engineering.

Defect Interaction and Clustering in Semiconductors

Author : Sergio Pizzini
Publisher : Scitec Publications
ISBN 13 :
Total Pages : 440 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Defect Interaction and Clustering in Semiconductors by : Sergio Pizzini

Download or read book Defect Interaction and Clustering in Semiconductors written by Sergio Pizzini and published by Scitec Publications. This book was released on 2002 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern semiconductor devices rely upon precise defect engineering. On the one hand: defects are the components needed to generate the electronic architecture of the device. On the other hand: they may - if not carefully controlled- induce failure of that device. During the past fifty years, the electrical and optical properties of defects, their generation, transport, clustering and reactions between them have been investigated intensively. Yet the development of semiconductor technology remains closely connected to the advances made in defect science and engineering. Compared to metals, defect control in silicon is significantly complicated by the open structure of its lattice. As a result, reactions between defects, even at room temperature, have become a central issue in defect engineering.

Chemistry of Semiconductors

Author : Sergio Pizzini
Publisher : Royal Society of Chemistry
ISBN 13 : 1839162120
Total Pages : 375 pages
Book Rating : 4.8/5 (391 download)

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Book Synopsis Chemistry of Semiconductors by : Sergio Pizzini

Download or read book Chemistry of Semiconductors written by Sergio Pizzini and published by Royal Society of Chemistry. This book was released on 2023-12-24 with total page 375 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Physical Chemistry of Semiconductor Materials and Processes

Author :
Publisher : John Wiley & Sons
ISBN 13 : 1118514602
Total Pages : 416 pages
Book Rating : 4.1/5 (185 download)

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Book Synopsis Physical Chemistry of Semiconductor Materials and Processes by :

Download or read book Physical Chemistry of Semiconductor Materials and Processes written by and published by John Wiley & Sons. This book was released on 2015-08-17 with total page 416 pages. Available in PDF, EPUB and Kindle. Book excerpt: The development of solid state devices began a little more than a century ago, with the discovery of the electrical conductivity of ionic solids. Today, solid state technologies form the background of the society in which we live. The aim of this book is threefold: to present the background physical chemistry on which the technology of semiconductor devices is based; secondly, to describe specific issues such as the role of defects on the properties of solids, and the crucial influence of surface properties; and ultimately, to look at the physics and chemistry of semiconductor growth processes, both at the bulk and thin-film level, together with some issues relating to the properties of nano-devices. Divided into five chapters, it covers: Thermodynamics of solids, including phases and their properties and structural order Point defects in semiconductors Extended defects in semiconductors and their interactions with point defects and impurities Growth of semiconductor materials Physical chemistry of semiconductor materials processing With applications across all solid state technologies,the book is useful for advanced students and researchers in materials science, physics, chemistry, electrical and electronic engineering. It is also useful for those in the semiconductor industry.

Charged Semiconductor Defects

Author : Edmund G. Seebauer
Publisher : Springer Science & Business Media
ISBN 13 : 1848820593
Total Pages : 304 pages
Book Rating : 4.8/5 (488 download)

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Book Synopsis Charged Semiconductor Defects by : Edmund G. Seebauer

Download or read book Charged Semiconductor Defects written by Edmund G. Seebauer and published by Springer Science & Business Media. This book was released on 2008-11-14 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.

Silicon, Germanium, and Their Alloys

Author : Gudrun Kissinger
Publisher : CRC Press
ISBN 13 : 1466586648
Total Pages : 436 pages
Book Rating : 4.4/5 (665 download)

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Book Synopsis Silicon, Germanium, and Their Alloys by : Gudrun Kissinger

Download or read book Silicon, Germanium, and Their Alloys written by Gudrun Kissinger and published by CRC Press. This book was released on 2014-12-09 with total page 436 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon–germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium nanocrystals. World-recognized experts are the authors of the book’s chapters, which span bulk, thin film, and nanostructured materials growth and characterization problems, theoretical modeling, crystal defects, diffusion, and issues of key applicative value, including chemical etching as a defect delineation technique, the spectroscopic analysis of impurities, and the use of devices as tools for the measurement of materials quality.

Defects and Diffusion in Semiconductors XIV

Author : David J. Fisher
Publisher : Trans Tech Publications Ltd
ISBN 13 : 3038139866
Total Pages : 173 pages
Book Rating : 4.0/5 (381 download)

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Book Synopsis Defects and Diffusion in Semiconductors XIV by : David J. Fisher

Download or read book Defects and Diffusion in Semiconductors XIV written by David J. Fisher and published by Trans Tech Publications Ltd. This book was released on 2012-12-04 with total page 173 pages. Available in PDF, EPUB and Kindle. Book excerpt: This 14th volume in the series covers the latest results in the field of Defects and Diffusion in Semiconductor. The issue also includes some original papers: An Experimental Study of the Thermal Properties of Modified 9Cr-1Mo Steel; Physico-Mechanical Properties of Sintered Iron-Silica Sand Nanoparticle Composites: A Preliminary Study; Defect and Dislocation Density Parameters of 5251 Al Alloy Using Positron Annihilation Lifetime Technique; A Novel Computational Strategy to Enhance the Ability of Elaborate Search by Entire Swarm to Find the Best Solution in Optimization of AMCs; Synthesis and Characterization of Novel Nanoceramic Magnesium Ferrite Material Doped with Samarium and Dysprosium for Designing Microstrip Patch Antenna; ZnO Varistor Defective Gd and Pr Ions; Injecting CO2 and Pumping Out Saline Formation Water Simultaneously to Control Pressure Build-Up while Storing CO2 in Deep Saline Aquifers; Studying the Effect of Low ?-Radiation Doses on CR-39 Polymers Using Positron Annihilation Lifetime and Mechanical Properties.

Simulation of Semiconductor Processes and Devices 1998

Author : Kristin De Meyer
Publisher : Springer Science & Business Media
ISBN 13 : 3709168279
Total Pages : 423 pages
Book Rating : 4.7/5 (91 download)

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Book Synopsis Simulation of Semiconductor Processes and Devices 1998 by : Kristin De Meyer

Download or read book Simulation of Semiconductor Processes and Devices 1998 written by Kristin De Meyer and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 423 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices. Topics include: • semiconductor equipment simulation • process modeling and simulation • device modeling and simulation of complex structures • interconnect modeling • integrated systems for process, device, circuit simulation and optimisation • numerical methods and algorithms • compact modeling and parameter extraction • modeling for RF applications • simulation and modeling of new devices (heterojunction based, SET’s, quantum effect devices, laser based ...)

Materials Science Reading Sampler

Author : Wiley
Publisher : John Wiley & Sons
ISBN 13 : 111860590X
Total Pages : 250 pages
Book Rating : 4.1/5 (186 download)

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Book Synopsis Materials Science Reading Sampler by : Wiley

Download or read book Materials Science Reading Sampler written by Wiley and published by John Wiley & Sons. This book was released on 2013-02-15 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 2013 Materials Science eBook Sampler includes select material from seven Materials Science titles. Titles are from a number of Wiley imprints including Wiley, Wiley-VCH, Wiley-American Ceramic Society, Wiley-Scrivener and Wiley-The Minerals, Metals and Materials Society. The material that is included for each selection is the book’s full Table of Contents as well as a sample chapter. If you would like to read more from these books, you can purchase the full book or e-book at your favorite online retailer.

Characterisation and Control of Defects in Semiconductors

Author : Filip Tuomisto
Publisher : Materials, Circuits and Device
ISBN 13 : 1785616552
Total Pages : 601 pages
Book Rating : 4.7/5 (856 download)

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Book Synopsis Characterisation and Control of Defects in Semiconductors by : Filip Tuomisto

Download or read book Characterisation and Control of Defects in Semiconductors written by Filip Tuomisto and published by Materials, Circuits and Device. This book was released on 2019-10-27 with total page 601 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an up-to-date review of the experimental and theoretical methods used for studying defects in semiconductors, this book focuses on recent developments driven by the requirements of new materials, including nitrides, oxide semiconductors and 2-D semiconductors.

Defects and Diffusion in Semiconductors XIII

Author : David J. Fisher
Publisher : Trans Tech Publications Ltd
ISBN 13 : 3038135208
Total Pages : 199 pages
Book Rating : 4.0/5 (381 download)

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Book Synopsis Defects and Diffusion in Semiconductors XIII by : David J. Fisher

Download or read book Defects and Diffusion in Semiconductors XIII written by David J. Fisher and published by Trans Tech Publications Ltd. This book was released on 2011-07-04 with total page 199 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thirteenth volume in the series covering the latest results in the field includes abstracts of papers which have appeared since the publication of Annual Retrospective XII (Volumes 303-304). As well as the over 300 semiconductor-related abstracts, the issue includes the original papers: Effect of KCl Addition upon the Photocatalytic Activity of Zinc Sulphide (D.Vaya, A.Jain, S.Lodha, V.K.Sharma, S.C.Ameta), Localized Vibrational Mode in Manganese-Doped Zinc Sulphide and Cadmium Sulphide Nanoparticles (M.Ragam, N.Sankar, K.Ramachandran), The Effect of a Light Impurity on the Electronic Structure of Dislocations in NiAl (L.Chen, Z.Qiu), Analysis of Finite Element Discretisation Schemes for Multi-Phase Darcy Flow (D.P.Adhikary, A.H.Wilkins), Theoretical Investigations of the Defect Structure for Ni3+ in ZnO (Z.H.Zhang, S.Y.Wu, S.X.Zhang).

Defects and Diffusion in Semiconductors IV

Author : David J. Fisher
Publisher : Trans Tech Publications Ltd
ISBN 13 : 303570709X
Total Pages : 500 pages
Book Rating : 4.0/5 (357 download)

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Book Synopsis Defects and Diffusion in Semiconductors IV by : David J. Fisher

Download or read book Defects and Diffusion in Semiconductors IV written by David J. Fisher and published by Trans Tech Publications Ltd. This book was released on 2001-11-30 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt: This fourth volume in the series covering the latest results in the field includes abstracts of papers which appeared within the approximate period of mid-2000 to mid-2001. The scope of this coverage includes, in addition to traditional semiconductors, the increasingly important carbide, nitride and silicide semiconductors. Semiconducting oxides are not covered, as information on these can be found in the "Defects and Diffusion in Ceramics Retrospective" series. The increasing interest in ceramic-type semiconductors is again reflected by the invited papers, which include an extensive review of the particular problems involved in growing GaN films on sapphire substrates. Nevertheless, established semiconductors continue to spring surprises and to offer new problems and these are also addressed here by a number of further detailed reviews of work on Si, InP and InGaP. Finally, new results are to be found here concerning diffusive processes and defect behaviour in Ge, GeSi, InGaAs, Si and ZnSe. Altogether, these 8 long reviews, 9 research papers and 752 selected abstracts provide an invaluable and up-to-date insight into current and future trends in semiconductor theory, processing and applications.

Semiconductor Radiation Detectors

Author : Gerhard Lutz
Publisher : Springer
ISBN 13 : 3540716793
Total Pages : 353 pages
Book Rating : 4.5/5 (47 download)

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Book Synopsis Semiconductor Radiation Detectors by : Gerhard Lutz

Download or read book Semiconductor Radiation Detectors written by Gerhard Lutz and published by Springer. This book was released on 2007-06-15 with total page 353 pages. Available in PDF, EPUB and Kindle. Book excerpt: Starting from basic principles, this book describes the rapidly growing field of modern semiconductor detectors used for energy and position measurement radiation. The author, whose own contributions to these developments have been significant, explains the working principles of semiconductor radiation detectors in an intuitive way. Broad coverage is also given to electronic signal readout and to the subject of radiation damage.

Principles of Radiation Interaction in Matter and Detection

Author : Claude Leroy
Publisher : World Scientific
ISBN 13 : 981436052X
Total Pages : 1041 pages
Book Rating : 4.8/5 (143 download)

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Book Synopsis Principles of Radiation Interaction in Matter and Detection by : Claude Leroy

Download or read book Principles of Radiation Interaction in Matter and Detection written by Claude Leroy and published by World Scientific. This book was released on 2012 with total page 1041 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book, like the first and second editions, addresses the fundamental principles of interaction between radiation and matter and the principles of particle detection and detectors in a wide scope of fields, from low to high energy, including space physics and medical environment. It provides abundant information about the processes of electromagnetic and hadronic energy deposition in matter, detecting systems, performance of detectors and their optimization. The third edition includes additional material covering, for instance: mechanisms of energy loss like the inverse Compton scattering, corrections due to the LandauOCoPomeranchukOCoMigdal effect, an extended relativistic treatment of nucleusOConucleus screened Coulomb scattering, and transport of charged particles inside the heliosphere. Furthermore, the displacement damage (NIEL) in semiconductors has been revisited to account for recent experimental data and more comprehensive comparisons with results previously obtained. This book will be of great use to graduate students and final-year undergraduates as a reference and supplement for courses in particle, astroparticle, space physics and instrumentation. A part of the book is directed toward courses in medical physics. The book can also be used by researchers in experimental particle physics at low, medium, and high energy who are dealing with instrumentation."

Principles of Radiation Interaction in Matter and Detection

Author : Claude Leroy
Publisher : World Scientific
ISBN 13 : 9814458465
Total Pages : 1040 pages
Book Rating : 4.8/5 (144 download)

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Book Synopsis Principles of Radiation Interaction in Matter and Detection by : Claude Leroy

Download or read book Principles of Radiation Interaction in Matter and Detection written by Claude Leroy and published by World Scientific. This book was released on 2011-09-23 with total page 1040 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book, like the first and second editions, addresses the fundamental principles of interaction between radiation and matter and the principles of particle detection and detectors in a wide scope of fields, from low to high energy, including space physics and medical environment. It provides abundant information about the processes of electromagnetic and hadronic energy deposition in matter, detecting systems, performance of detectors and their optimization. The third edition includes additional material covering, for instance: mechanisms of energy loss like the inverse Compton scattering, corrections due to the Landau–Pomeranchuk–Migdal effect, an extended relativistic treatment of nucleus–nucleus screened Coulomb scattering, and transport of charged particles inside the heliosphere. Furthermore, the displacement damage (NIEL) in semiconductors has been revisited to account for recent experimental data and more comprehensive comparisons with results previously obtained. This book will be of great use to graduate students and final-year undergraduates as a reference and supplement for courses in particle, astroparticle, space physics and instrumentation. A part of the book is directed toward courses in medical physics. The book can also be used by researchers in experimental particle physics at low, medium, and high energy who are dealing with instrumentation. Errata(s) Errata Contents:Electromagnetic Interaction of Radiation in MatterNuclear Interactions in MatterRadiation Environments and Damage in Silicon SemiconductorsScintillating Media and Scintillator DetectorsSolid State DetectorsDisplacement Damage and Particle Interactions in Silicon DevicesGas Filled ChambersPrinciples of Particle Energy DeterminationSuperheated Droplet (Bubble) Detectors and CDM SearchMedical Physics Applications Readership: Researchers, academics, graduate students and professionals in accelerator, particle, astroparticle, space, applied and medical physics. Keywords:Interactions Between Radiation/Particles and Matter;High;Intermediate and Low Energy Particle Physics;Medical Physics;Radiation/Particle Detection;Space Physics;Detectors;Semiconductors;Calorimeters;Chambers;Scintillators;Silicon Pixels;Radiation Damage;Single Event Effects;Solar CellsKey Features:Covers state-of-the-art detection techniques and underlying theoriesAddresses topics of considerable use for professionals in medical physics, nuclear engineering, and environmental studiesContains an updated reference table set of physical properties

Defects and Properties of Semiconductors

Author : J. Chikawa
Publisher : Springer
ISBN 13 :
Total Pages : 280 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Defects and Properties of Semiconductors by : J. Chikawa

Download or read book Defects and Properties of Semiconductors written by J. Chikawa and published by Springer. This book was released on 1987-03-31 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains nearly all of the papers presented at the Symposium on "Defects and Qualities of Semiconductors" which was held in Tokyo on May 17-18, 1984, under the sponsorship of the SOCIETY OF NON-TRADITIONAL TECHNOLOGY. The Symposium was organized by the promoting committee of the research project "Quality Developement of Semiconductors by Utilization of Crystal Defects" sponsored by the Science and Technology Agency of Japan. Defect study in semiconductor engineering started originally with seeking methods how to suppress generation of harmful defects during device processing in order to achieve a high yield of device fabrication. Recently, a new trend has appeared in which crystal defects are positively utilized to improve the device performance and reliability. A typical example is the intrinsic gettering technique for Czochralski silicon. Thus, a new term "DEFECT ENGINEERING" was born. It is becoming more important to control density and distribution of defects than to eliminate all the defects. Very precise and deep knowledge on defects is required to establish such techniques as generation and development of defects desired depending on type of devices and degree of integration. Electrical, optical and mechanical effects of defects should be also understood correctly. Such knowledge is essential even for eliminating defects from some specified device regions. It is the time now to investigate defect properties and defect kinetics in an energetic way. From this point of view, all the speakers in this symposium were invited among the most active investigators in the field of defect engineering in Japan.

Identification of Defects in Semiconductors

Author :
Publisher : Academic Press
ISBN 13 : 9780080864488
Total Pages : 376 pages
Book Rating : 4.8/5 (644 download)

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Book Synopsis Identification of Defects in Semiconductors by :

Download or read book Identification of Defects in Semiconductors written by and published by Academic Press. This book was released on 1998-07-02 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors.The"Willardson and Beer"Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices,Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.