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Author : J. R. O'Connor
Publisher :
ISBN 13 :
Total Pages : 521 pages
Book Rating : 4.:/5 (252 download)
Download or read book Silicon Carbide written by J. R. O'Connor and published by . This book was released on 1960 with total page 521 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book SILICON CARBIDE- A HIGH TEMPERATURE SEMICONDUCTOR- PROCEEDINGS OF A CONFERENCE ON SILICON CARBIDE- ELECTRONICS RESEARCH DIRECTORATE, AIR FORCE CAMBRIDGE RESEARCH CENTER. written by and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Joseph R. O'Connor
Publisher : Pergamon
ISBN 13 :
Total Pages : 552 pages
Book Rating : 4.3/5 (91 download)
Download or read book Silicon Carbide, a High Temperature Semiconductor written by Joseph R. O'Connor and published by Pergamon. This book was released on 1960 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Joseph R. O'Connor
Publisher :
ISBN 13 :
Total Pages : 552 pages
Book Rating : 4.F/5 ( download)
Download or read book Silicon Carbide, a High Temperature Semiconductor written by Joseph R. O'Connor and published by . This book was released on 1960 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : J. R. O'Connor
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (847 download)
Download or read book Silicon Carbide, a High Temperature Semiconductor written by J. R. O'Connor and published by . This book was released on 1960 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : H. K. Henisch
Publisher : Elsevier
ISBN 13 : 1483152618
Total Pages : 379 pages
Book Rating : 4.4/5 (831 download)
Download or read book Silicon Carbide — 1968 written by H. K. Henisch and published by Elsevier. This book was released on 2013-10-22 with total page 379 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Carbide — 1968 presents the proceedings of the International Conference on Silicon Carbide held in University Park, Pennsylvania on October 20-23, 1968. The book covers papers about the perspectives on silicon carbide; several problems in the development of silicon carbide semiconductors, such as the control of crystal structure and analysis. The thermal properties of beta-silicon carbide from 20 to 2000 degrees and the influence of impurities on the growth of silicon carbide crystals in chemical reactions and by recrystallization are also discussed. The book then presents papers about silicon carbide single crystal growth using the Norton process; the principles of solution and traveling solvent growth of silicon carbide; the growth of silicon carbide from cobalt-silicon solutions; and the growth of silicon carbide from vapor by the Bridgman-Stockbarger method. Papers about the growth of crystals and epitaxial layers of beta silicon carbide; the heteroepitaxy of beta-silicon carbide employing liquid metals; some aspects of disorder in silicon carbide; and the dependence of physical properties on polytype structure are also considered. The book describes topics about the optical properties of polytypes of silicon carbide as well as the phase stability of silicon carbide against nitrogen. Other papers about the physical and electronic properties of silicon carbide are also discussed in the book. People involved in semiconductor industries will find the book helpful.
Author : J. R. Littler
Publisher :
ISBN 13 :
Total Pages : 24 pages
Book Rating : 4.3/5 (91 download)
Download or read book A Unique High-temperature, High-pressure Crystal Growth System for Silicon Carbide written by J. R. Littler and published by . This book was released on 1973 with total page 24 pages. Available in PDF, EPUB and Kindle. Book excerpt: A high-pressure, high-temperature furnace system is described for crystal growth experiments using crucibles up to 13 cm in diameter and 26 cm high. The vertical temperature gradient is electronically controlled during growth such that the ends of the crucible can be maintained at temperatures above or below the crucible center. Temperatures up to 2800C can be maintained at pressures up to 50 atmospheres. A vacuum capability up to .000001 torr at 1800C has been incorporated into the system. Single crystals of alpha silicon carbide grown in this system at 2600C are described to illustrate its use. (Author).
Author : Conference on Silicon Carbide, Boston, 1959
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (144 download)
Download or read book Silicon carbide, a high temperature semiconductor: proceedings of the conference... written by Conference on Silicon Carbide, Boston, 1959 and published by . This book was released on with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Charles Edward Ryan
Publisher :
ISBN 13 :
Total Pages : 34 pages
Book Rating : 4.3/5 (91 download)
Download or read book The Conversion of Cubic to Hexagonal Silicon Carbide as a Function of Temperature and Pressure written by Charles Edward Ryan and published by . This book was released on 1967 with total page 34 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : International Conference on Silicon Carbide, University Park, Pa., 1968
Publisher :
ISBN 13 :
Total Pages : 372 pages
Book Rating : 4.:/5 (222 download)
Download or read book Silicon Carbide - 1968 written by International Conference on Silicon Carbide, University Park, Pa., 1968 and published by . This book was released on 1969 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 622 pages
Book Rating : 4.:/5 (334 download)
Download or read book Proceedings of the Chemical Society written by and published by . This book was released on 1959 with total page 622 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Gus J. Caras
Publisher :
ISBN 13 :
Total Pages : 212 pages
Book Rating : 4.3/5 (91 download)
Download or read book Silicon Carbide for Semiconductors written by Gus J. Caras and published by . This book was released on 1965 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Joseph J. Comer
Publisher :
ISBN 13 :
Total Pages : 30 pages
Book Rating : 4.3/5 (91 download)
Download or read book Electron Optical Studies of Heteroepitaxial Growth of Beta Silicon Carbide Layers Through Molten Metal Intermediates written by Joseph J. Comer and published by . This book was released on 1970 with total page 30 pages. Available in PDF, EPUB and Kindle. Book excerpt: Beta silicon carbide has the potential of becoming an important semiconductor device material for hazardous military environments such as high temperature and radiation. This report is concerned with a study of the growth of thin single crystal films of beta silicon carbide through molten metal intermediates. Thin films of nickel, cobalt, chromium and iron were deposited by vacuum deposition on to the (0001) faces of single crystals of alpha silicon carbide. Then heteroepitaxial layers of beta silicon carbide were deposited through the molten metal films by the hydrogen reduction of methyltrichlorosilane. The deposited films were studied by electron microscopy, electron diffraction and electron beam microprobe analysis to determine the growth mechanism and to arrive at optimum conditions for heteroepitaxial growth. From the results obtained it was concluded that nickel and cobalt were equally effective in promoting epitaxial growth. Films of nickel only 20A in thickness were as effective as those up to 300A. Results with chromium and iron were disappointing for different reasons. Chromium did not etch the substrate surface uniformly because of poor wetting. With iron, whisker growth of beta silicon carbide occurred at the surface. Although in many respects the growth of mechanism resembled that of the vapor-liquid-solid method, certain differences were observed which make the actual growth mechanism using nickel and cobalt films still uncertain. (Author).
Author : Conference on Silicon Carbide (BOSTON, Massachusetts)
Publisher :
ISBN 13 :
Total Pages : 521 pages
Book Rating : 4.:/5 (558 download)
Download or read book Silicon Carbide: a High Temperature Semiconductor. Proceedings of the Conference on Silicon Carbide ... April 2-3, 1959. Edited by J.R. O'Connor and J. Smiltens, Etc written by Conference on Silicon Carbide (BOSTON, Massachusetts) and published by . This book was released on 1960 with total page 521 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : JOSEPH R. ( EDITOR ) O'CONNOR
Publisher :
ISBN 13 :
Total Pages : 521 pages
Book Rating : 4.:/5 (32 download)
Download or read book SILICON CARBIDE. A HIGH TEMPERATURE SEMICONDUCTOR ; PROCEEDINGS. CONFERENCE, BOSTON 1959 written by JOSEPH R. ( EDITOR ) O'CONNOR and published by . This book was released on 1960 with total page 521 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Robert C. Marshall
Publisher :
ISBN 13 :
Total Pages : 692 pages
Book Rating : 4.:/5 (488 download)
Download or read book Silicon Carbide - 1973 written by Robert C. Marshall and published by . This book was released on 1974 with total page 692 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : New York Public Library. Research Libraries
Publisher :
ISBN 13 :
Total Pages : 648 pages
Book Rating : 4.3/5 (91 download)
Download or read book Dictionary Catalog of the Research Libraries of the New York Public Library, 1911-1971 written by New York Public Library. Research Libraries and published by . This book was released on 1979 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt:
