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Secondary Ion Mass Spectrometry For The Characterization Of Semiconductor Materials
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Book Synopsis Secondary Ion Mass Spectrometry for the Characterization of Semiconductor Materials by : Howard Elliot Smith
Download or read book Secondary Ion Mass Spectrometry for the Characterization of Semiconductor Materials written by Howard Elliot Smith and published by . This book was released on 1986 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Secondary Ion Mass Spectrometry by : Fred Stevie
Download or read book Secondary Ion Mass Spectrometry written by Fred Stevie and published by Momentum Press. This book was released on 2015-09-15 with total page 233 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book was written to explain a technique that requires an understanding of many details in order to properly obtain and interpret the data obtained. It also will serve as a reference for those who need to provide SIMS data. The book has over 200 figures and the references allow one to trace development of SIMS and understand the many details of the technique.
Book Synopsis Quantitative Analysis of Semiconductor Materials Using Secondary Ion Mass Spectrometry by : Paul Kim Ho Chu
Download or read book Quantitative Analysis of Semiconductor Materials Using Secondary Ion Mass Spectrometry written by Paul Kim Ho Chu and published by . This book was released on 1982 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characterization of Semiconductor Materials, Volume 1 by : G. E. McGuire
Download or read book Characterization of Semiconductor Materials, Volume 1 written by G. E. McGuire and published by William Andrew. This book was released on 1989-12-31 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt: Characterization of semiconductor materials and methods used to characterize them will be described extensively in this new Noyes series. Written by experts in each subject area, the series will present the most up-to-date information available in this rapidly advancing field. Includes chapters on Electrical Characterization, Ion Mass Spectrometry, Photoelectron Spectroscopy, Ion/Solid Interactions and more.
Book Synopsis Semiconductor Material and Device Characterization by : Dieter K. Schroder
Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Author :National Aeronautics and Space Administration (NASA) Publisher :Createspace Independent Publishing Platform ISBN 13 :9781721216017 Total Pages :32 pages Book Rating :4.2/5 (16 download)
Book Synopsis Growth and Characterization of III-V Semiconductors for Device Applications by : National Aeronautics and Space Administration (NASA)
Download or read book Growth and Characterization of III-V Semiconductors for Device Applications written by National Aeronautics and Space Administration (NASA) and published by Createspace Independent Publishing Platform. This book was released on 2018-06-16 with total page 32 pages. Available in PDF, EPUB and Kindle. Book excerpt: The research goal was to achieve a fundamental understanding of the physical processes occurring at the surfaces and interfaces of epitaxially grown InGaAs/GaAs (100) heterostructures. This will facilitate the development of quantum well devices for infrared optical applications and provide quantitative descriptions of key phenomena which impact their performance. Devices impacted include high-speed laser diodes and modulators for fiber optic communications at 1.55 micron wavelengths and intersub-band lasers for longer infrared wavelengths. The phenomenon of interest studied was the migration of indium in InGaAs structures. This work centered on the molecular beam epitaxy reactor and characterization apparatus donated to CAU by AT&T Bell Laboratories. The material characterization tool employed was secondary ion mass spectrometry. The training of graduate and undergraduate students was an integral part of this program. The graduate students received a thorough exposure to state-of-the-art techniques and equipment for semiconductor materials analysis as part of the Master''s degree requirement in physics. The undergraduates were exposed to a minority scientist who has an excellent track record in this area. They also had the opportunity to explore surface physics as a career option. The results of the scientific work was published in a refereed journal and several talks were presented professional conferences and academic seminars. Williams, Michael D. Glenn Research Center
Book Synopsis An Introduction to Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) and its Application to Materials Science by : Sarah Fearn
Download or read book An Introduction to Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) and its Application to Materials Science written by Sarah Fearn and published by Morgan & Claypool Publishers. This book was released on 2015-10-16 with total page 67 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book highlights the application of Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) for high-resolution surface analysis and characterization of materials. While providing a brief overview of the principles of SIMS, it also provides examples of how dual-beam ToF-SIMS is used to investigate a range of materials systems and properties. Over the years, SIMS instrumentation has dramatically changed since the earliest secondary ion mass spectrometers were first developed. Instruments were once dedicated to either the depth profiling of materials using high-ion-beam currents to analyse near surface to bulk regions of materials (dynamic SIMS), or time-of-flight instruments that produced complex mass spectra of the very outer-most surface of samples, using very low-beam currents (static SIMS). Now, with the development of dual-beam instruments these two very distinct fields now overlap.
Book Synopsis Secondary Ion Mass Spectrometry SIMS XI by : G. Gillen
Download or read book Secondary Ion Mass Spectrometry SIMS XI written by G. Gillen and published by Wiley. This book was released on 1998-03-06 with total page 1150 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains 252 contributions presented as plenary,invited and contributed poster and oral presentations at the 11thInternational Conference on Secondary Ion Mass Spectrometry (SIMSXI) held at the Hilton Hotel, Walt Disney World Village, Orlando,Florida, 7 12 September, 1997. The book covers a diverse range ofresearch, reflecting the rapid growth in advanced semiconductorcharacterization, ultra shallow depth profiling, TOF-SIMS and thenew areas in which SIMS techniques are being used, for example inbiological sciences and organic surface characterization. Papersare presented under the following categories: * Isotopic SIMS * Biological SIMS * Semiconductor Characterization Techniques and Applications * Ultra Shallow Depth Profiling * Depth Profiling Fundamental/Modelling and Diffusion * Sputter-Induced Topography * Fundamentals of Molecular Desorption * Organic Materials * Practical TOF-SIMS * Polyatomic Primary Ions * Materials/Surface Analysis * Postionization * Instrumentation * Geological SIMS * Imaging * Fundamentals of Sputtering * Ion Formation and Cluster Formation * Quantitative Analysis Environmental/ParticleCharacterization * Related Techniques These proceedings provide an invaluable source of reference forboth newcomers to the field and experienced SIMS users.
Book Synopsis Secondary Ion Mass Spectrometry SIMS III by : A. Benninghoven
Download or read book Secondary Ion Mass Spectrometry SIMS III written by A. Benninghoven and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 455 pages. Available in PDF, EPUB and Kindle. Book excerpt: Following the biannual meetings in MUnster (1977) and Stanford (1979) the Third International Conference on Secondary Ion Mass Spectroscopy was held in Budapest from August 31 to September 5, 1981. The Conference was attended by about 250 participants. The success of the 1981 Conference in Budapest was especially due to the excellent preparation and organization by the Local Organizing Committee. We would also like to acknowledge the generous hospitality and cooperation of the Hungarian Academy of Sciences. Japan was chosen to be the location for the next conference in 1983. SIMS conferences are devoted to two main issues: improving the application of SIMS in different and especially new fields, and understanding the ion formation process. Needless to say, there is a very strong interaction be tween these two issues. The major reason for the rapid increase in SIMS activities in the last few years is the fact that SIMS is a powerful tool for bulk, thin-film, and surface analysis. Today it is extensively and successfully applied in such different fields as depth profiling and imaging of semiconductor devices, in isotope analysis of minerals, in imaging biological tissues, in the study of catalysts and catalytic reactions, in oxide-layer analysis on metals in drug detection, and in the analysis of body fluids.
Book Synopsis Secondary Ion Mass Spectrometry by : Paul van der Heide
Download or read book Secondary Ion Mass Spectrometry written by Paul van der Heide and published by John Wiley & Sons. This book was released on 2014-08-19 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt: Serves as a practical reference for those involved in Secondary Ion Mass Spectrometry (SIMS) • Introduces SIMS along with the highly diverse fields (Chemistry, Physics, Geology and Biology) to it is applied using up to date illustrations • Introduces the accepted fundamentals and pertinent models associated with elemental and molecular sputtering and ion emission • Covers the theory and modes of operation of the instrumentation used in the various forms of SIMS (Static vs Dynamic vs Cluster ion SIMS) • Details how data collection/processing can be carried out, with an emphasis placed on how to recognize and avoid commonly occurring analysis induced distortions • Presented as concisely as believed possible with All sections prepared such that they can be read independently of each other
Book Synopsis Secondary Ion Mass Spectrometry by : J. C. Vickerman
Download or read book Secondary Ion Mass Spectrometry written by J. C. Vickerman and published by Oxford University Press, USA. This book was released on 1989 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an overview of the phenomenology, technology and application of secondary ion mass spectrometry as a technique for materials analysis. This approach is developing into one of the most effective methods of characterizing the composition and chemical state of the surface and sub-surface layers of solid materials. The first three chapters introduce the basic physical and chemical principles involved and the theories which have been proposed to explain the process. Subsequent chapters describe the instrumental components of the SIMS apparatus, the use of SIMS as an analytical tool, and the development of the techniques of sputtered neutral mass spectrometry and laser microprobe and plasma desorption mass spectrometry. Many practical examples are featured to illustrate the application of SIMS to real problems, possible pitfalls are pointed out, and data of use to analysts are collected in appendices. The book is a practical guide suitable for scientists in all fields who wish to use this valuable analytical technique.
Book Synopsis Quantification of Secondary Ion Mass Spectrometry on Semiconductor Materials by : Hendrik Johannes Strydom
Download or read book Quantification of Secondary Ion Mass Spectrometry on Semiconductor Materials written by Hendrik Johannes Strydom and published by . This book was released on 1989 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Secondary Ion Mass Spectrometry by : K. F. J. Heinrich
Download or read book Secondary Ion Mass Spectrometry written by K. F. J. Heinrich and published by Forgotten Books. This book was released on 2018-09-12 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt: Excerpt from Secondary Ion Mass Spectrometry: Proceedings of a Workshop on Secondary Ion Mass Spectrometry and Ion Microprobe Mass Analysis; Held at the National Bureau of Standards, Gaithersburg, MD., September 16-18, 1974 Microanalysis by means of secondary ion mass spectrometry is still in the initial phases of exploration. The observation of elements of low atomic number, the measurement of isotope ratios, and the shallow depth of sampling achievable with an ion microprobe or ion microscope are the outstandingly attractive features of this technique. They have already produced exciting results in diverse fields of application, including the study of distribution in depth of dopants and impurities in semiconductor materials, the characterization of the microscopic distribution of hydrogen and boron in alloys, and the analysis of microscopic particles. On the other hand, the experimental difficulties and instrumental limitations, the uncertainties involving theoretical models of ion-target interaction, and the serious problems in obtaining appropriate standards have vexed the analysts involved in the practice of ion probe microanalysis. Since the cost of purchase and maintenance of the instrument is very high, the prospective user needs all the information he can obtain in order to assess the potential gains and the limitations of secondary ion mass spectrometry applied to his specific needs. About the Publisher Forgotten Books publishes hundreds of thousands of rare and classic books. Find more at www.forgottenbooks.com This book is a reproduction of an important historical work. Forgotten Books uses state-of-the-art technology to digitally reconstruct the work, preserving the original format whilst repairing imperfections present in the aged copy. In rare cases, an imperfection in the original, such as a blemish or missing page, may be replicated in our edition. We do, however, repair the vast majority of imperfections successfully; any imperfections that remain are intentionally left to preserve the state of such historical works.
Book Synopsis Secondary Ion Mass Spectrometric Studies of Group III - Group V Semiconductor Materials by : Gerald Joseph Scilla
Download or read book Secondary Ion Mass Spectrometric Studies of Group III - Group V Semiconductor Materials written by Gerald Joseph Scilla and published by . This book was released on 1977 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Practice of TOF-SIMS by : Alan M. Spool
Download or read book The Practice of TOF-SIMS written by Alan M. Spool and published by . This book was released on 2016 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Time of flight secondary ion mass spectrometry, TOF-SIMS, is a highly surface sensitive analytical technique that can provide information about composition with submicron lateral resolution for a wide variety of materials. In conjunction with the latest cluster ion sources, organic depth profiling is also commonly performed now. For select materials, TOF-SIMS provides unparalleled sensitivity along with excellent reproducibility, and as a mass spectrometric technique, it also provides excellent specificity in the identification of many organic materials. Of the analytical methods available, it is among the most surface sensitive, but the physical principles that underlie it are also the least understood. This volume describes the instrumentation, the physical principles behind the technique to the extent they are understood, and provides a practical approach for the interpretation of TOF-SIMS data. The use of advanced data processing methods such as multivariate statistics are described in a readily approachable manner along with guidelines to help the reader understand where they are or are not really helpful. Given a basic background in undergraduate chemistry and physics, the book will be of use to any student with an interest in the technique. While the analyses are in fact performed in a vacuum, they are conducted in the context of a wider laboratory environment where many other analytical methods are available. The place of TOF-SIMS amongst them, when it is appropriate to use this method or another, or when multiple methods should be used in conjunction with TOF-SIMS is discussed in some depth. Examples of the wide range of applications of TOF-SIMS for research and problem solving in Academic Laboratories, National Laboratories, and Industrial laboratories, as it is applied to polymeric, biological, semiconductor, metallic, insulating, homogeneous, and inhomogeneous surfaces are described.
Book Synopsis Secondary Ion Mass Spectrometry by : Robert G. Wilson
Download or read book Secondary Ion Mass Spectrometry written by Robert G. Wilson and published by Wiley-Interscience. This book was released on 1989-11-16 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: Seco ndary Ion Mass Spectrometry Basic Concepts, Instrumental Aspects, Applications and Trends (Volume 86 in Chemical Analysis: A Series of Monographs on Analytical Chemistry and Its Applications) A. Benninghoven, F. G. Rüdenauer, and H. W. Werner "[This book] is (and probably will be for a long time ahead) the standard book on secondary ion mass spectrometry." —Trends in Analytical Chemistry "This is a monumental work, and contains nearly 600 illustrations and over 2,000 references covering nearly all the essential published information up to 1985. The book will certainly find its place as a reference work in most laboratories using this methodology" —Analytica Chimica Acta 1987 (0 471-01056-1) 1,227 pp. Secondary Ion Mass Spectrometry Proceedings of the Sixth International Conference on Secondary Ion Mass Spectrometry (SIMS VI) Edited by A. Benninghoven, A.M. Huber, and H. W. Werner "The international SIMS conferences have been held every two years since 1977. They are recognized as one of the major forums for scientists, instrument manufacturers, and other researchers actively engaged in this rapidly expanding field…this volume is a valuable account of the latest advances in the field of SIMS, and of the research trends of some of the most respected experts in the field.…it is recommended for the libraries of all academic and industrial institutions where SIMS research is ongoing.…it should prove a valuable reference source for years to come." —Applied Spectroscopy 1988 (0 471-91832-6) 1,078 pp.
Book Synopsis Secondary Ion Mass Spectrometry SIMS IV by : A. Benninghoven
Download or read book Secondary Ion Mass Spectrometry SIMS IV written by A. Benninghoven and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains full proceedings of the Fourth International Conference on Secondary Ion Mass Spectrometry (SIMS-IV), held in the Minoo-Kanko Hotel, Osaka, Japan, from November 13th to 19th, 1983. Coordinated by a local or ganizing committee under the auspices of the international organizing com mittee, it followed earlier conferences held in MUnster (1977), Stanford (1979), and Budapest (1981). The conference was attended by about 250 participants from 18 countries, and 130 papers including 24 invited ones were presented. Reflecting the rap idly expanding activities in the SIMS field, informative papers were pre sented containing up-to-date information on SIMS and various related fields. The proceedings focussed upon six main issues: (1) Fundamentals of sput tering and secondary ion formation. (2) Recent progress in instrumentation, including submicron SIMS and image processing. (3) SIMS combined with other surface analysis techniques. (4) Outstanding SIMS-related analytical methods such as laser-microprobe SIMS, sputtered neutral mass spectrometry, mass spectrometry of sputtered neutrals by multi-photon resonance ionization, and accelerator-based SIMS. (5) Organic SIMS and FAB which has recently become a rapidly expanding technique in pharmacy, biotechnology, etc. (6) Appl ica tions of SIMS to various fields such as metallurgy, geology, and biology, including depth profiling of semiconductors, and analysis of inorganic mate rials. As a venue for the exchange of ideas and information concerning all the above issues, the conference proved a great success.
