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Schottky Barrier Formation At Metal Quantum Well Interfaces Studied With Ballistic Electron Emission Microscopy
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Book Synopsis Schottky Barrier Formation at Metal-quantum Well Interfaces Studied with Ballistic Electron Emission Microscopy by : Cristian Alexandru Tivarus
Download or read book Schottky Barrier Formation at Metal-quantum Well Interfaces Studied with Ballistic Electron Emission Microscopy written by Cristian Alexandru Tivarus and published by . This book was released on 2005 with total page 233 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: A number of possible near and long term semiconductor device technologies rely on abrupt metal-semiconductor interfaces with nm-dimensions, and with internal nm-scale inhomogeneity. It is therefore very important to be able probe the electronic properties of these buried interfaces with sub-10 nm resolution and to find out the impact of small-size effects on their transport properties. In our study we used Ballistic Electron Emission Microscopy (BEEM) and finite-element electrostatic modeling to quantify how small-size effects modify the energy barrier at metal/semiconductor quantum wells (QWs), formed by making Schottky contacts to cleaved edges of GaAs quantum wells. Our model semiconductor heterostructure is formed as a sequence of AlGaAs/GaAs/AlGaAs layers and contains a sequence of GaAs QWs with thickness between 1 and 15 nm. The Schottky barrier height (SBH) measurements as a function of QW thickness showed that the SBH value increases as the QW thickness is decreased, by up to 140 meV for a 1 nm thick QW. This is mostly due to a large quantum-confinement increase (200 meV for a 1nm QW), modified by smaller decreases due to environmental electric field effects. Our modeling gave excellent quantitative agreement with measurements for a wide range of QW thickness when both these effects are considered. In a separate study, the cleaved QW were used as nm-apertures to estimate the resolution of BEEM as a function of metal film thickness. We found that BEEM resolution degrades as the top metal film layer is made thicker, from 12 nm for a 4 nm thick Au layer, up to 22 nm for a 15 nm thick Au layer. Also presented is modeling of the electrostatic potential profile around charged threading dislocations (TD) in GaN, close to a metal-semiconductor interface, and its dependence on the energy of acceptor sites along the dislocation. We found that for energy values higher than 1.13 eV the near interface TD acceptors are completely filled right up to the interface. This results in a very large negative space charge and an increase in the local barrier height close to the TD core that should be observable by techniques such as BEEM.
Book Synopsis Energy Band Alignments at Metal/molecular Layer/semiconductor and Metal/quantum Dot Interfaces Using Ballistic Electron Emission Microscopy by : Camelia Marginean
Download or read book Energy Band Alignments at Metal/molecular Layer/semiconductor and Metal/quantum Dot Interfaces Using Ballistic Electron Emission Microscopy written by Camelia Marginean and published by . This book was released on 2009 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: In the studies presented here, we used Ballistic Electron Emission Microscopy (BEEM), a version of Scanning Tunneling Microscopy in a three terminal configuration, to quantify the local Schottky barrier height and to image the local hot-electron transmittance at buried interfaces described below. In the search to replace or advance silicon based technology, advances in molecular electronics promote the possibility to use molecular electronic components to enhance integrated circuits. Therefore, the studies of the electronic transport properties of junctions containing molecular layers are of great interest. In our study, we used Au/GaAs Schottky junctions which have molecular layers with large electric dipoles inserted between the Au and GaAs layers, for which the molecules are neither well organized nor close-packed, rather forming monolayers which turn out to present pinholes. We used Ballistic Electron Emission Microscopy to directly characterize the inhomogeneity of the buried molecular layer. One important result that we found in these nanometer resolution studies of Au/molecular film/GaAs junctions is that the electronic transport is made through the pinholes rather than tunneling through the molecules. We also found that the effective Schottky barrier height at the pinholes is modified by the surrounding molecular film with a dipole, consistent with a theoretical model based on macroscopic measurements of the same types of samples.
Book Synopsis Formation Of Semiconductor Interfaces - Proceedings Of The 4th International Conference by : J Pollman
Download or read book Formation Of Semiconductor Interfaces - Proceedings Of The 4th International Conference written by J Pollman and published by World Scientific. This book was released on 1994-06-09 with total page 818 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor interfaces are of paramount importance in micro, nano- and optoelectronics. Basic as well as applied research on such systems is therefore of extremely high current interest. To meet the continuous need for a better understanding of semiconductor interfaces with respect to both their fundamental physical and chemical properties as well as their applications in modern opto- and microelectronics, the series of international conferences on the formation of semiconductor interfaces was begun. The fourth conference of the series held in Jülich addresses as main topics: clean semiconductor surfaces; adsorbates at semiconductor surfaces; metal-semiconductor, insulator-semiconductor and semiconductor-semiconductor interfaces; devices and wet chemical processes. The 12 invited lectures assess the present status of the research in important areas and about 180 contributed papers describe most recent achievements in the field.
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2006 with total page 860 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical & Electronics Abstracts by :
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 2304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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Book Synopsis Optoelectronic Integrated Circuit Materials, Physics, and Devices by : M. Razeghi
Download or read book Optoelectronic Integrated Circuit Materials, Physics, and Devices written by M. Razeghi and published by . This book was released on 1995 with total page 810 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ceramic Abstracts written by and published by . This book was released on 1998 with total page 1040 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Diamond/transition-metal Interfaces Catalytic Graphitisation and Schottky Barrier Formation Studies by XPS. by : Peter Hampden Clifton
Download or read book Diamond/transition-metal Interfaces Catalytic Graphitisation and Schottky Barrier Formation Studies by XPS. written by Peter Hampden Clifton and published by . This book was released on 1996 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Applied Science & Technology Index by :
Download or read book Applied Science & Technology Index written by and published by . This book was released on 2000 with total page 1688 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Canadian Journal of Physics written by and published by . This book was released on 1991 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Nanoscale Schottky Barrier Visualization Utilizing Computational Modeling and Ballistic Electron Emission Microscopy by : Westly Nolting
Download or read book Nanoscale Schottky Barrier Visualization Utilizing Computational Modeling and Ballistic Electron Emission Microscopy written by Westly Nolting and published by . This book was released on 2018 with total page 98 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific Information Bulletin by :
Download or read book Scientific Information Bulletin written by and published by . This book was released on 1992 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Towards a Fundamental Understanding of Inhomogeneous Interfaces Utilizing Ballistic Electron Emission Microscopy by : Robert Balsano
Download or read book Towards a Fundamental Understanding of Inhomogeneous Interfaces Utilizing Ballistic Electron Emission Microscopy written by Robert Balsano and published by . This book was released on 2014 with total page 72 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis International Aerospace Abstracts by :
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1998 with total page 920 pages. Available in PDF, EPUB and Kindle. Book excerpt:
