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Author : Michel Lannoo
Publisher : Springer
ISBN 13 :
Total Pages : 296 pages
Book Rating : 4.3/5 (91 download)
Download or read book Point Defects in Semiconductors: Theoretical aspects written by Michel Lannoo and published by Springer. This book was released on 1981 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : M. Lannoo
Publisher : Springer Science & Business Media
ISBN 13 : 364281574X
Total Pages : 283 pages
Book Rating : 4.6/5 (428 download)
Download or read book Point Defects in Semiconductors I written by M. Lannoo and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 283 pages. Available in PDF, EPUB and Kindle. Book excerpt: From its early beginning before the war, the field of semiconductors has developped as a classical example where the standard approximations of 'band theory' can be safely used to study its interesting electronic properties. Thus in these covalent crystals, the electronic structure is only weakly coupled with the atomic vibrations; one-electron Bloch functions can be used and their energy bands can be accurately computed in the neighborhood of the energy gap between the valence and conduction bands; nand p doping can be obtained by introducing substitutional impurities which only introduce shallow donors and acceptors and can be studied by an effective-mass weak-scattering description. Yet, even at the beginning, it was known from luminescence studies that these simple concepts failed to describe the various 'deep levels' introduced near the middle of the energy gap by strong localized imperfections. These imperfections not only include some interstitial and many substitutional atoms, but also 'broken bonds' associated with surfaces and interfaces, dis location cores and 'vacancies', i.e., vacant iattice sites in the crystal. In all these cases, the electronic structure can be strongly correlated with the details of the atomic structure and the atomic motion. Because these 'deep levels' are strongly localised, electron-electron correlations can also playa significant role, and any weak perturbation treatment from the perfect crystal structure obviously fails. Thus, approximate 'strong coupling' techniques must often be used, in line' with a more chemical de scription of bonding.
Author : Michel Lannoo
Publisher :
ISBN 13 : 9783642815751
Total Pages : 294 pages
Book Rating : 4.8/5 (157 download)
Download or read book Point Defects in Semiconductors written by Michel Lannoo and published by . This book was released on 1981 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Johann-Martin Spaeth
Publisher : Springer Science & Business Media
ISBN 13 : 3642556159
Total Pages : 497 pages
Book Rating : 4.6/5 (425 download)
Download or read book Point Defects in Semiconductors and Insulators written by Johann-Martin Spaeth and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 497 pages. Available in PDF, EPUB and Kindle. Book excerpt: The precedent book with the title "Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy" ap peared about 10 years ago. Since then a very active development has oc curred both with respect to the experimental methods and the theoretical interpretation of the experimental results. It would therefore not have been sufficient to simply publish a second edition of the precedent book with cor rections and a few additions. Furthermore the application of the multiple magnetic resonance methods has more and more shifted towards materials science and represents one of the important methods of materials analysis. Multiple magnetic resonances are used less now for "fundamental" studies in solid state physics. Therefore a more "pedestrian" access to the meth ods is called for to help the materials scientist to use them or to appreciate results obtained by using these methods. We have kept the two introduc tory chapters on conventional electron paramagnetic resonance (EPR) of the precedent book which are the base for the multiple resonance methods. The chapter on optical detection of EPR (ODEPR) was supplemented by sections on the structural information one can get from "forbidden" transitions as well as on spatial correlations between defects in the so-called "cross relaxation spectroscopy". High-field ODEPR/ENDOR was also added. The chapter on stationary electron nuclear double resonance (ENDOR) was supplemented by the method of stochastic END OR developed a few years ago in Paderborn which is now also commercially available.
Author : J. S. Blakemore
Publisher : Cambridge University Press
ISBN 13 : 9780521313919
Total Pages : 520 pages
Book Rating : 4.3/5 (139 download)
Download or read book Solid State Physics written by J. S. Blakemore and published by Cambridge University Press. This book was released on 1985-12-12 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt: Updated to reflect recent work in the field, this book emphasizes crystalline solids, going from the crystal lattice to the ideas of reciprocal space and Brillouin zones, and develops these ideas for lattice vibrations, for the theory of metals, and for semiconductors. The theme of lattice periodicity and its varied consequences runs through eighty percent of the book. Other sections deal with major aspects of solid state physics controlled by other phenomena: superconductivity, dielectric and magnetic properties, and magnetic resonance.
Author : Johann-Martin Spaeth
Publisher : Springer
ISBN 13 : 9783642556166
Total Pages : 492 pages
Book Rating : 4.5/5 (561 download)
Download or read book Point Defects in Semiconductors and Insulators written by Johann-Martin Spaeth and published by Springer. This book was released on 2012-10-15 with total page 492 pages. Available in PDF, EPUB and Kindle. Book excerpt: The precedent book with the title "Structural Analysis of Point Defects in Solids: An introduction to multiple magnetic resonance spectroscopy" ap peared about 10 years ago. Since then a very active development has oc curred both with respect to the experimental methods and the theoretical interpretation of the experimental results. It would therefore not have been sufficient to simply publish a second edition of the precedent book with cor rections and a few additions. Furthermore the application of the multiple magnetic resonance methods has more and more shifted towards materials science and represents one of the important methods of materials analysis. Multiple magnetic resonances are used less now for "fundamental" studies in solid state physics. Therefore a more "pedestrian" access to the meth ods is called for to help the materials scientist to use them or to appreciate results obtained by using these methods. We have kept the two introduc tory chapters on conventional electron paramagnetic resonance (EPR) of the precedent book which are the base for the multiple resonance methods. The chapter on optical detection of EPR (ODEPR) was supplemented by sections on the structural information one can get from "forbidden" transitions as well as on spatial correlations between defects in the so-called "cross relaxation spectroscopy". High-field ODEPR/ENDOR was also added. The chapter on stationary electron nuclear double resonance (ENDOR) was supplemented by the method of stochastic END OR developed a few years ago in Paderborn which is now also commercially available.
Author : S. Pizzini
Publisher : Materials Research Forum LLC
ISBN 13 : 1945291230
Total Pages : 134 pages
Book Rating : 4.9/5 (452 download)
Download or read book Point Defects in Group IV Semiconductors written by S. Pizzini and published by Materials Research Forum LLC. This book was released on 2017-04-05 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt: A self-consistent model of point defects requires a reliable connection with the experimentally deduced structural, spectroscopic and thermodynamic properties of the defect centres, to allow their unambiguous identification. This book focuses on the properties of defects in group IV semiconductors and seeks to clarify whether full knowledge of their chemical nature can account for several problems encountered in practice. It is shown how difficult the fulfilment of self-consistency conditions can be, even today, after more than four decades of dedicated research work, especially in the case of compound semiconductors, such as SiC, but also in the apparently simple cases of silicon and germanium. The reason for this is that the available microscopic models do not yet account for defect interactions in real solids.
Author : A. M. Stoneham
Publisher : Oxford University Press
ISBN 13 : 9780198507802
Total Pages : 982 pages
Book Rating : 4.5/5 (78 download)
Download or read book Theory of Defects in Solids written by A. M. Stoneham and published by Oxford University Press. This book was released on 2001 with total page 982 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book surveys the theory of defects in solids, concentrating on the electronic structure of point defects in insulators and semiconductors. The relations between different approaches are described, and the predictions of the theory compared critically with experiment. The physical assumptions and approximations are emphasized. The book begins with the perfect solid, then reviews the main methods of calculating defect energy levels and wave functions. The calculation and observable defect properties is discussed, and finally, the theory is applied to a range of defects that are very different in nature. This book is intended for research workers and graduate students interested in solid-state physics. From reviews of the hardback: 'It is unique and of great value to all interested in the basic aspects of defects in solids.' Physics Today 'This is a particularly worthy book, one which has long been needed by the theoretician and experimentalist alike.' Nature
Author : Johann-Martin Spaeth
Publisher : Springer Science & Business Media
ISBN 13 : 3642844057
Total Pages : 376 pages
Book Rating : 4.6/5 (428 download)
Download or read book Structural Analysis of Point Defects in Solids written by Johann-Martin Spaeth and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: Strutural Analysis of Point Defects in Solids introduces the principles and techniques of modern electron paramagnetic resonance (EPR) spectroscopy essentialfor applications to the determination of microscopic defect structures. Investigations of the microscopic and electronic structure, and also correlations with the magnetic propertiesof solids, require various multiple magnetic resonance methods, such as ENDOR and optically detected EPR or ENDOR. This book discusses experimental, technological and theoretical aspects of these techniques comprehensively, from a practical viewpoint, with many illustrative examples taken from semiconductors and other solids. The nonspecialist is informed about the potential of the different methods, while the researcher faced with the task of determining defect structures isprovided with the necessary tools, together with much information on computer-aided methods of data analysis and the principles of modern spectrometer design.
Author : David A. Drabold
Publisher : Springer
ISBN 13 : 9783540822707
Total Pages : 295 pages
Book Rating : 4.8/5 (227 download)
Download or read book Theory of Defects in Semiconductors written by David A. Drabold and published by Springer. This book was released on 2009-09-02 with total page 295 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume presents a coherent and detailed description of the field, and brings together leaders in theoretical research. The book discusses today's state-of-the-art, as well as tomorrow’s tools: the supercell-pseudopotential method, the GW formalism, Quantum Monte Carlo, learn-on-the-fly molecular dynamics, finite-temperature treatments and more. A wealth of applications are included, from point defects to wafer bonding or the propagation of dislocation.
Author : Otfried Madelung
Publisher : Springer Science & Business Media
ISBN 13 : 3642618855
Total Pages : 501 pages
Book Rating : 4.6/5 (426 download)
Download or read book Introduction to Solid-State Theory written by Otfried Madelung and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: Introduction to Solid-State Theory is a textbook for graduate students of physics and materials science. It also provides the theoretical background needed by physicists doing research in pure solid-state physics and its applications to electrical engineering. The fundamentals of solid-state theory are based on a description by delocalized and localized states and - within the concept of delocalized states - by elementary excitations. The development of solid-state theory within the last ten years has shown that by a systematic introduction of these concepts, large parts of the theory can be described in a unified way. This form of description gives a "pictorial" formulation of many elementary processes in solids, which facilitates their understanding.
Author : J. Bourgoin
Publisher : Springer Science & Business Media
ISBN 13 : 3642818323
Total Pages : 314 pages
Book Rating : 4.6/5 (428 download)
Download or read book Point Defects in Semiconductors II written by J. Bourgoin and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt: In introductory solid-state physics texts we are introduced to the concept of a perfect crystalline solid with every atom in its proper place. This is a convenient first step in developing the concept of electronic band struc ture, and from it deducing the general electronic and optical properties of crystalline solids. However, for the student who does not proceed further, such an idealization can be grossly misleading. A perfect crystal does not exist. There are always defects. It was recognized very early in the study of solids that these defects often have a profound effect on the real physical properties of a solid. As a result, a major part of scientific research in solid-state physics has,' from the early studies of "color centers" in alkali halides to the present vigorous investigations of deep levels in semiconductors, been devoted to the study of defects. We now know that in actual fact, most of the interest ing and important properties of solids-electrical, optical, mechanical- are determined not so much by the properties of the perfect crystal as by its im perfections.
Author : Marshall Stoneham
Publisher : Oxford University Press, USA
ISBN 13 : 9780199532506
Total Pages : 996 pages
Book Rating : 4.5/5 (325 download)
Download or read book Theories of Defects in Solids written by Marshall Stoneham and published by Oxford University Press, USA. This book was released on 2001-02-01 with total page 996 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book surveys the theory of defects in solids, concentrating on the electronic structure of point defects in insulators and semiconductors. The relations between different approaches are described, and the predictions of the theory compared critically with experiment. The physicalassumptions and approximations are emphasized. Theory of Defects in Solids begins with the perfect solid, then reviews the main methods of calculating defect energy levels and wave functions. The calculation of observable defect properties is discussed, and finally, the theory is applied to a range of defects that are very different in nature.This book is intended for research workers and graduate students interested in solid-state physics.
Author : Reinhard Krause-Rehberg
Publisher : Springer Science & Business Media
ISBN 13 : 9783540643715
Total Pages : 408 pages
Book Rating : 4.6/5 (437 download)
Download or read book Positron Annihilation in Semiconductors written by Reinhard Krause-Rehberg and published by Springer Science & Business Media. This book was released on 1999 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive book reports on recent investigations of lattice imperfections in semiconductors by means of positron annihilation. It reviews positron techniques, and describes the application of these techniques to various kinds of defects, such as vacancies, impurity vacancy complexes and dislocations.
Author : Stephan Glutsch
Publisher : Springer Science & Business Media
ISBN 13 : 3662071509
Total Pages : 302 pages
Book Rating : 4.6/5 (62 download)
Download or read book Excitons in Low-Dimensional Semiconductors written by Stephan Glutsch and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt: The author develops the effective-mass theory of excitons in low-dimensional semiconductors and describes numerical methods for calculating the optical absorption including Coulomb interaction, geometry, and external fields. The theory is applied to Fano resonances in low-dimensional semiconductors and the Zener breakdown in superlattices. Comparing theoretical results with experiments, the book is essentially self-contained; it is a hands-on approach with detailed derivations, worked examples, illustrative figures, and computer programs. The book is clearly structured and will be valuable as an advanced-level self-study or course book for graduate students, lecturers, and researchers.
Author : C.Y. Fong
Publisher : Springer Science & Business Media
ISBN 13 : 1468455532
Total Pages : 350 pages
Book Rating : 4.4/5 (684 download)
Download or read book Properties of Impurity States in Superlattice Semiconductors written by C.Y. Fong and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt: A NATO workshop on "The Properties of Impurity States in Semiconductor Superlattices" was held at the University of Essex, Colchester, United Kingdom, from September 7 to 11, 1987. Doped semiconductor superlattices not only provide a unique opportunity for studying low dimensional electronic behavior, they can also be custom-designed to exhibit many other fascinating el~ctronic properties. The possibility of using these materials for new and novel devices has further induced many astonishing advances, especially in recent years. The purpose of this workshop was to review both advances in the state of the art and recent results in various areas of semiconductor superlattice research, including: (i) growth and characterization techniques, (ii) deep and shallow im purity states, (iii) quantum well states, and (iv) two-dimensional conduction and other novel electronic properties. This volume consists of all the papers presented at the workshop. Chapters 1-6 are concerned with growth and characterization techniques for superlattice semiconductors. The question of a-layer is also discussed in this section. Chapters 7-15 contain a discussion of various aspects of the impurity states. Chapters 16- 22 are devoted to quantum well states. Finally, two-dimensional conduction and other electronic properties are described in chapters 23-26.
Author : Guiseppe Morandi
Publisher : Springer Science & Business Media
ISBN 13 : 3662042738
Total Pages : 286 pages
Book Rating : 4.6/5 (62 download)
Download or read book Field Theories for Low-Dimensional Condensed Matter Systems written by Guiseppe Morandi and published by Springer Science & Business Media. This book was released on 2013-03-14 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is especially addressed to young researchers in theoretical physics with a basic background in Field Theory and Condensed Matter Physics. The topics were chosen so as to offer the largest possible overlap between the two expertises, selecting a few key problems in Condensed Matter Theory which have been recently revisited within a field-theoretic approach. The presentation of the material is aimed not only at providing the reader with an overview of this exciting frontier area of modern theoretical physics, but also at elucidating most of the tools needed for a technical comprehen sion of the many papers appearing in current issues of physics journals and, hopefully, to enable the reader to tackle research problems in this area of physics. This makes the material a live creature: while not pretending it to be exhaustive, it is tutorial enough to be useful to young researchers as a starting point in anyone of the topics covered in the book.
