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Optical Structural And Electrical Properties Of Group Iii Nitrides
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Book Synopsis III-Nitride Semiconductors by : M.O. Manasreh
Download or read book III-Nitride Semiconductors written by M.O. Manasreh and published by Elsevier. This book was released on 2000-12-06 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.
Book Synopsis Optoelectronic Devices by : M Razeghi
Download or read book Optoelectronic Devices written by M Razeghi and published by Elsevier. This book was released on 2004 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Book Synopsis Iii-nitride Semiconductor Materials by : Zhe Chuan Feng
Download or read book Iii-nitride Semiconductor Materials written by Zhe Chuan Feng and published by World Scientific. This book was released on 2006-03-20 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride semiconductor materials — (Al, In, Ga)N — are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment.The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals./a
Book Synopsis Group III-Nitride Semiconductor Optoelectronics by : Choudhury J. Praharaj
Download or read book Group III-Nitride Semiconductor Optoelectronics written by Choudhury J. Praharaj and published by John Wiley & Sons. This book was released on 2023-11-07 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discover a comprehensive exploration of the foundations and frontiers of the optoelectronics technology of group-III nitrides and their ternary alloys In Group III-Nitride Semiconductor Optoelectronics, expert engineer Dr. Choudhury J. Praharaj delivers an insightful overview of the optoelectronic applications of group III-nitride semiconductors. The book covers all relevant aspects of optical emission and detection, including the challenges of optoelectronic integration and a detailed comparison with other material systems. The author discusses band structure and optical properties of III-nitride semiconductors, as well as the properties of their low-dimensional structures. He also describes different optoelectronic systems such as LEDs, lasers, photodetectors, and optoelectronic integrated circuits. Group III-Nitride Semiconductor Optoelectronics covers both the fundamentals of the field and the most cutting-edge discoveries. Detailed appendices contain Maxwell's equations in dielectric media and descriptions of time-dependent perturbation theory and light-matter interaction. Readers will also benefit from: A thorough introduction to the band structure and optical properties of group III-nitride semiconductors Comprehensive explorations of growth and doping of group III-nitride devices and heterostructures Practical discussions of the optical properties of low dimensional structures in group III-nitrides In-depth examinations of lasers and light-emitting diodes, other light-emitting devices, photodetectors, photovoltaics, and optoelectronic integrated circuits Concise treatments of the quantum optical properties of nitride semiconductor devices Perfect for researchers in electrical engineering, applied physics, and materials science, Group III-Nitride Semiconductor Optoelectronics is also a must-read resource for graduate students and industry practitioners in those fields seeking a state-of-the-art reference on the optoelectronics technology of group III-nitrides.
Book Synopsis Dilute III-V Nitride Semiconductors and Material Systems by : Ayse Erol
Download or read book Dilute III-V Nitride Semiconductors and Material Systems written by Ayse Erol and published by Springer Science & Business Media. This book was released on 2008-01-12 with total page 607 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.
Download or read book III-nitride written by Zhe Chuan Feng and published by Imperial College Press. This book was released on 2006 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride semiconductor materials OCo (Al, In, Ga)N OCo are excellent wide band gap semiconductors very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved recently, and current knowledge and data published have to be modified and upgraded. This book presents the new developments and achievements in the field. Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory or experiment. The III-Nitride-based industry is building up and new economic developments from these materials are promising. It is expected that III-Nitride-based LEDs may replace traditional light bulbs to realize a revolution in lighting. This book is a valuable source of information for engineers, scientists and students working towards such goals. Sample Chapter(s). Chapter 1: Hydride Vapor Phase Epitaxy of Group III Nitride Materials (540 KB). Contents: Hydride Vapor Phase Epitaxy of Group III Nitride Materials (V Dmitriev & A Usikov); Planar MOVPE Technology for Epitaxy of III-Nitride Materials (M Dauelsberg et al.); Close-Coupled Showerhead MOCVD Technology for the Epitaxy of GaN and Related Materials (E J Thrush & A R Boyd); Molecular Beam Epitaxy for III-N Materials (H Tang & J Webb); Growth and Properties of Nonpolar GaN Films and Heterostructures (Y J Sun & O Brandt); Indium-Nitride Growth by High-Pressure CVD: Real-Time and Ex-Situ Characterization (N Dietz); A New Look on InN (L-W Tu et al.); Growth and Optical/Electrical Properties of Al x Ga 1-x N Alloys in the Full Composition Range (F Yun); Optical Investigation of InGaN/GaN Quantum Well Structures Grown by MOCVD (T Wang); Clustering Nanostructures and Optical Characteristics in InGaN/GaN Quantum-Well Structures with Silicon Doping (Y-C Cheng et al.); III-Nitrides Micro- and Nano-Structures (H M Ng & A Chowdhury); New Developments in Dilute Nitride Semiconductor Research (W Shan et al.). Readership: Scientists; material growers and evaluators; device design, processing engineers; postgraduate and graduate students in electrical & electronic engineering and materials engineering.
Book Synopsis Optical and Electrical Properties of Nanoscale Materials by : Alain Diebold
Download or read book Optical and Electrical Properties of Nanoscale Materials written by Alain Diebold and published by Springer Nature. This book was released on 2022-01-10 with total page 495 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the optical and electrical properties of nanoscale materials with an emphasis on how new and unique material properties result from the special nature of their electronic band structure. Beginning with a review of the optical and solid state physics needed for understanding optical and electrical properties, the book then introduces the electronic band structure of solids and discusses the effect of spin orbit coupling on the valence band, which is critical for understanding the optical properties of most nanoscale materials. Excitonic effects and excitons are also presented along with their effect on optical absorption. 2D materials, such as graphene and transition metal dichalcogenides, are host to unique electrical properties resulting from the electronic band structure. This book devotes significant attention to the optical and electrical properties of 2D and topological materials with an emphasis on optical measurements, electrical characterization of carrier transport, and a discussion of the electronic band structures using a tight binding approach. This book succinctly compiles useful fundamental and practical information from one of the fastest growing research topics in materials science and is thus an essential compendium for both students and researchers in this rapidly moving field.
Book Synopsis Electrical and Optical Characterization of Group III-nitride Alloys for Solar Energy Conversion by : Rebecca Elizabeth Jones
Download or read book Electrical and Optical Characterization of Group III-nitride Alloys for Solar Energy Conversion written by Rebecca Elizabeth Jones and published by . This book was released on 2008 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :Nerijus Armakavicius Publisher :Linköping University Electronic Press ISBN 13 :917685132X Total Pages :62 pages Book Rating :4.1/5 (768 download)
Book Synopsis Free charge carrier properties in group III nitrides and graphene studied by THz-to-MIR ellipsometry and optical Hall effect by : Nerijus Armakavicius
Download or read book Free charge carrier properties in group III nitrides and graphene studied by THz-to-MIR ellipsometry and optical Hall effect written by Nerijus Armakavicius and published by Linköping University Electronic Press. This book was released on 2019-03-05 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt: Development of silicon based electronics have revolutionized our every day life during the last five decades. Nowadays silicon based devices operate close to their theoretical limits that is becoming a bottleneck for further progress. In particular, for the growing field of high frequency and high power electronics, silicon cannot offer the required properties. Development of materials capable of providing high current densities, carrier mobilities and high breakdown fields is crucial for further progress in state of the art electronics. Epitaxial graphene grown on semi-insulating silicon carbide substrates has a high potential to be integrated in current planar device technologies. High electron mobilities and sheet carrier densities make graphene extremely attractive for high frequency analog applications. One of the remaining challenges is the interaction of epitaxial graphene with the substrate. Typically, much lower free charge carrier mobilities, compared to free standing graphene, and doping, due to charge transfer from the substrate, is reported. Thus, a good understanding of the intrinsic free charge carriers properties and the factors affecting them is very important for further development of epitaxial graphene. Group III-nitrides have been extensively studied and already have proven their high efficiency as light emitting diodes for short wavelengths. High carrier mobilities and breakdown electric fields were demonstrated for group III-nitrides, making them attractive for high frequency and high power applications. Currently, In-rich InGaN alloys and AlGaN/GaN high electron mobility structures are of high interest for the research community due to open fundamental questions such as free charge carrier properties at high temperatures and wavefunction hybridization in AlGaN/GaN heterostructures. Electrical characterization techniques, commonly used for the determination of free charge carrier properties, require good ohmic and Schottky contacts, which in certain cases can be difficult to achieve. Access to electrical properties of buried conductive channels in multilayered structures requires modification of samples and good knowledge of the electrical properties of all electrical junctions within the structure. Moreover, the use of contacts to electrically characterize two-dimensional electronic materials, such as graphene, can alter their intrinsic properties. Furthermore, the determination of effective mass parameters commonly employs cyclotron resonance and Shubnikov-de Haas oscillations measurements, which require long scattering times of free charge carriers, high magnetic fields and low temperatures. The optical Hall effect is an external magnetic-field induced birefringence of conductive layers due to the free charge carriers interaction with long-wavelength electromagnetic waves under the influence of the Lorentz force. The optical Hall effect can be measured by generalized ellipsometry and provides a powerful method for the determination of free charge carrier properties in a non-destructive and contactless manner. The optical Hall effect measurements can provide quantitative information about free charge carrier type, concentration, mobility and effective mass parameters at temperatures ranging from few kelvins to room temperature and above. It further allows to differentiate the free charge carrier properties of individual layers in multilayer samples. The employment of a backside cavity for transparent samples can enhance the optical Hall effect and allows to access free charge carrier properties at relatively low magnetic fields using permanent magnet. The optical Hall effect measurements at mid-infrared spectral range can be used to probe quantum mechanical phenomena such as Landau levels in graphene. The magnetic field dependence of the inter-Landau level transition energies and optical polarization selection rules provide information about coupling properties between graphene layers and the electronic band structure. Measurement of the optical Hall effect by generalized ellipsometry is an indirect technique requiring subsequent data analysis. Parameterized optical models are fitted to match experimentally measured ellipsometric spectra by varying physically significant model parameters. Analysis of the generalized ellipsometry data at long wavelengths for samples containing free charge carriers by optical models based on the classical Drude formulation, augmented with an external magnetic field contribution, allows to extract carrier concentration, mobility and effective mass parameters. The development of the integrated FIR and THz frequency-domain ellipsometer at the Terahertz Materials Analysis Center in Linköping University was part of the graduate studies presented in this dissertation. The THz ellipsometer capabilities are demonstrated by determination of Si and sapphire optical constants, and free charge carrier properties of two-dimensional electron gas in GaN-based high electron mobility transistor structures. The THz ellipsometry is further shown to be capable of determining free charge carrier properties and following their changes upon variation of ambient conditions in atomically thin layers with an example of epitaxial graphene. A potential of the THz OHE with the cavity enhancement (THz-CE-OHE) for determination of the free charge carrier properties in atomically thin layers were demonstrated by the measurements of the carrier properties in monolayer and multilayer epitaxial graphene on Si-face 4H-SiC. The data analysis revealed p-type doping for monolayer graphene with a carrier density in the low 1012 cm-2 range and a carrier mobility of 1550 cm2V-1s-1. For the multilayer graphene, n-type doping with a carrier density in the low 1013 cm-2 range, a mobility of 470 cm2V-1s-1 and an effective mass of (0.14 ± 0.03)m0 were extracted. Different type of doping among monolayer and multilayer graphene is explained as a result of different hydrophobicity among samples. Further, we have employed THz-CE-OHE to determine for the first time anisotropic mobility parameter in quasi-free-standing bilayer epitaxial graphene induced by step-like surface morphology of 4H-SiC. Correlation of atomic force microscopy, Raman scattering spectroscopy, scanning probe Kelvin probe microscopy, low energy electron microscopy and diffraction analysis allows us to investigate the possible scattering mechanisms and suggests that anisotropic mobility is induced by varying local mobility parameter due to interaction between graphene and underlaying substrate. The origin of the layers decoupling in multilayer graphene on C-face 4H-SiC was studied by MIR-OHE, transmission electron microscopy and electron energy loss spectroscopy. The results revealed the decoupling of the layers induced by the increased interlayer spacing which is attributed to the Si atoms trapped between graphene layers. MIR ellipsometry and MIR-OHE measurements were employed to determine the electron effective mass in a wurtzite In0.33Ga0.67N epitaxial layer. The data analysis revealed the effective mass parameters parallel and perpendicular to the c-axis which can be considered as equal within sensitivity of our measurements. The determined effective mass is consistent with linear dependence on the In content. Analysis of the free charge carrier properties in AlGaN/GaN high electron mobility structures with modified interfaces showed that AlGaN/GaN interface structure has a significant effect on the mobility parameter. A sample with a sharp interface layers exhibits a record mobility of 2332 ± 73 cm2V-1s-1. The determined effective mass parameters showed an increase compared to the bulk GaN value, which is attributed to the penetration of the electron wavefunction into the AlGaN barrier layer. Temperature dependence of free charge carrier properties in GaN-based high electron mobility transistor structures with AlGaN and InAlN barrier layers were measured by terahertz optical Hall effect technique in a temperature range from 7.2 K to 398 K. The results revealed strong changes in the effective mass and mobility parameters. At temperatures below 57 K very high carrier mobility parameters above 20000 cm2V-1s-1 for AlGaN-barrier sample and much lower mobilities of ~ 5000 cm2V-1s-1 for InAlN-barrier sample were obtained. At low temperatures the effective mass parameters for both samples are very similar to bulk GaN value, while at temperatures above 131 K effective mass shows a strong increase with temperature. The effective masses of 0.344 m0 (@370 K) and 0.439 m0 (@398 K) were obtained for AlGaN- and InAlN-barrier samples, respectively. We discussed the possible origins of effective mass enhancement in high electron mobility transistor structures.
Book Synopsis III-nitride Devices and Nanoengineering by : Zhe Chuan Feng
Download or read book III-nitride Devices and Nanoengineering written by Zhe Chuan Feng and published by World Scientific. This book was released on 2008 with total page 477 pages. Available in PDF, EPUB and Kindle. Book excerpt: Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.
Book Synopsis Properties of Group III Nitrides by : James H. Edgar
Download or read book Properties of Group III Nitrides written by James H. Edgar and published by Institution of Electrical Engineers. This book was released on 1994 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: The group III nitrides are playing an increasingly important role in the development of commercially viable microelectronic and optoelectronic devices. This volume provides reviews and evaluations of the group, in addition to guidance on the current reference literature.
Book Synopsis III-Nitride Based Light Emitting Diodes and Applications by : Tae-Yeon Seong
Download or read book III-Nitride Based Light Emitting Diodes and Applications written by Tae-Yeon Seong and published by Springer Science & Business Media. This book was released on 2014-07-08 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: Light emitting diodes (LEDs) are already used in traffic signals, signage lighting, and automotive applications. However, its ultimate goal is to replace traditional illumination through LED lamps since LED lighting significantly reduces energy consumption and cuts down on carbon-dioxide emission. Despite dramatic advances in LED technologies (e.g., growth, doping and processing technologies), however, there remain critical issues for further improvements yet to be achieved for the realization of solid-state lighting. This book aims to provide the readers with some contemporary LED issues, which have not been comprehensively discussed in the published books and, on which the performance of LEDs is seriously dependent. For example, most importantly, there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and and In-rich GaN-based semiconductors. The materials quality is directly dependent on the substrates used, such as sapphire, Si, etc. In addition, efficiency droop, growth on different orientations and polarization are also important. Chip processing and packaging technologies are key issues. This book presents a comprehensive review of contemporary LED issues. Given the interest and importance of future research in nitride semiconducting materials and solid state lighting applications, the contents are very timely. The book is composed of chapters written by leading researchers in III-nitride semiconducting materials and device technology. This book will be of interest to scientists and engineers working on LEDs for lighting applications. Postgraduate researchers working on LEDs will also benefit from the issues this book provides.
Book Synopsis III-Nitride Semiconductor Optoelectronics by :
Download or read book III-Nitride Semiconductor Optoelectronics written by and published by Academic Press. This book was released on 2017-01-05 with total page 490 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride Semiconductor Optoelectronics covers the latest breakthrough research and exciting developments in the field of III-nitride compound semiconductors. It includes important topics on the fundamentals of materials growth, characterization, and optoelectronic device applications of III-nitrides. Bulk, quantum well, quantum dot, and nanowire heterostructures are all thoroughly explored. - Contains the latest breakthrough research in III-nitride optoelectronics - Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization and the design and performance characterization of state-of-the-art optoelectronic devices - Presents an in-depth discussion on III-nitride bulk, quantum well, quantum dot, and nanowire technologies
Book Synopsis Handbook of Nitride Semiconductors and Devices, Materials Properties, Physics and Growth by : Hadis Morkoç
Download or read book Handbook of Nitride Semiconductors and Devices, Materials Properties, Physics and Growth written by Hadis Morkoç and published by John Wiley & Sons. This book was released on 2009-07-30 with total page 1311 pages. Available in PDF, EPUB and Kindle. Book excerpt: The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 1 deals with the properties and growth of GaN. The deposition methods considered are: hydride VPE, organometallic CVD, MBE, and liquid/high pressure growth. Additionally, extended defects and their electrical nature, point defects, and doping are reviewed.
Book Synopsis III-Nitrides Light Emitting Diodes: Technology and Applications by : Jinmin Li
Download or read book III-Nitrides Light Emitting Diodes: Technology and Applications written by Jinmin Li and published by Springer Nature. This book was released on 2020-08-31 with total page 295 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book provides an overview of III-nitride-material-based light-emitting diode (LED) technology, from the basic material physics to the latest advances in the field, such as homoepitaxy and heteroepitaxy of the materials on different substrates. It also includes the latest advances in the field, such as approaches to improve quantum efficiency and reliability as well as novel structured LEDs. It explores the concept of material growth, chip structure, packaging, reliability and application of LEDs. With spectra coverage from ultraviolet (UV) to entire visible light wavelength, the III-nitride-material-based LEDs have a broad application potential, and are not just limited to illumination. These novel applications, such as health & medical, visible light communications, fishery and horticulture, are also discussed in the book.
Book Synopsis Optical and Structural Characterization of GaN Based Hybrid Structures and Nanorods by : Mathias Forsberg
Download or read book Optical and Structural Characterization of GaN Based Hybrid Structures and Nanorods written by Mathias Forsberg and published by Linköping University Electronic Press. This book was released on 2015-01-29 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN belongs to the group III nitrides and is today the material of choice for efficient blue light emission, enabling solid state white lighting by combining red, blue and green light emitting diodes (LED) or by having a blue LED illuminating a phosphor. By combining GaN quantum well (QW) structures with colloids, nanoparticles or polyfluorene films, LEDs may be fabricate at lower cost. Such hybrid structures are promising for future micro-light sources in full-color displays, sensors and imaging systems. In this work, hybrid structures based on an MOCVD grown GaN QW sandwiched between two layers of AlGaN have been studied. On top of the structure, colloidal ZnO nano-crystals were deposited by spin-coating. Time-resolved photoluminescence was used to investigate the QW exciton dynamics in these hybrids depending on the cap layer thickness. From comparison of the recombination rate in the bare QW structure and the hybrid, the efficiency of the non-radiative resonant energy transfer between the QW and the nano-crystals could be obtained. Bulk GaN of large area is difficult to synthesize. Thus, due to lack of native substrates, GaN-based structures are grown on SiC or sapphire, which results in high threading dislocation density in the active layer of the device. Fabricating GaN nanorods (NR) can be a way to produce GaN with lower defect density since threading dislocations are annihilated toward the NR wall during growth. Here, GaN(0001) NRs grown on Si(111) substrates by magnetron sputter epitaxy using a liquid Ga target have been investigated. Sputter deposition has the advantage of being easy to scale up for depositions on large surfaces. It is also possible to deposit at lower temperatures, which allows the use of substrates with lower decomposition temperature. In the second paper of this thesis, optical and structural properties of sputtered GaN NRs have been studied.
Book Synopsis Handbook of Nitride Semiconductors and Devices, Electronic and Optical Processes in Nitrides by : Hadis Morkoç
Download or read book Handbook of Nitride Semiconductors and Devices, Electronic and Optical Processes in Nitrides written by Hadis Morkoç and published by John Wiley & Sons. This book was released on 2009-07-30 with total page 883 pages. Available in PDF, EPUB and Kindle. Book excerpt: The three volumes of this handbook treat the fundamentals, technology and nanotechnology of nitride semiconductors with an extraordinary clarity and depth. They present all the necessary basics of semiconductor and device physics and engineering together with an extensive reference section. Volume 2 addresses the electrical and optical properties of nitride materials. It includes semiconductor metal contacts, impurity and carrier concentrations, and carrier transport in semiconductors.
