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Author : Yannis Tsividis
Publisher :
ISBN 13 : 9780199838417
Total Pages : pages
Book Rating : 4.8/5 (384 download)
Download or read book Operation and Modeling of the MOS Transistor, Solution Manual written by Yannis Tsividis and published by . This book was released on 2012-08-23 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Mehran Bagheri
Publisher :
ISBN 13 : 9780070653825
Total Pages : 184 pages
Book Rating : 4.6/5 (538 download)
Download or read book Solutions Manual to Accompany Tsividis written by Mehran Bagheri and published by . This book was released on 1987 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Yannis Tsividis
Publisher :
ISBN 13 : 9780195170153
Total Pages : 0 pages
Book Rating : 4.1/5 (71 download)
Download or read book Operation and Modeling of the MOS Transistor written by Yannis Tsividis and published by . This book was released on 2011 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MOS (Metal Oxide Semiconductor) transistor is the most important building block of modern silicon integrated circuits. This book fills an important gap in the literature by presenting a unified treatment of the operation and modeling of the MOS transistor that is complemented withextensive intuitive discussions.The MOS transistor is the dominant VLSI (Very Large Scale Integration) device, and understanding of this device is mandatory for those people planning a career in device physics and modeling as well as in circuit design. Especially important for university courses,there is a logical, systematic and progressive description that starts with semiconductor fundamentals and builds up to a comprehensive understanding of the basics of MOS transistors. For practicing professionals there are details of nuances observed in MOS transistor behavior, and variousapproaches to modeling these are presented. Detailed derivations are given for modeling dc currents, charges for large-signal operation, small-signal operation at low frequencies and high frequencies, and noise.
Author : Charles Batchelor Professor of Electrical Engineering Yannis Tsividis
Publisher :
ISBN 13 : 9780199733774
Total Pages : 248 pages
Book Rating : 4.7/5 (337 download)
Download or read book Instructor's Solution Manaul for Operation and Modeling of the Mo 3rd Ed written by Charles Batchelor Professor of Electrical Engineering Yannis Tsividis and published by . This book was released on 2010-12-14 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Yannis Tsividis
Publisher :
ISBN 13 : 9780070655249
Total Pages : 5 pages
Book Rating : 4.6/5 (552 download)
Download or read book Solutions Manual to Accompany Operation and Modeling of the MOS Transistor written by Yannis Tsividis and published by . This book was released on 1999 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Yannis Tsividis
Publisher : Oxford University Press, USA
ISBN 13 : 9780195170146
Total Pages : 620 pages
Book Rating : 4.1/5 (71 download)
Download or read book Operation and Modeling of the MOS Transistor written by Yannis Tsividis and published by Oxford University Press, USA. This book was released on 1999 with total page 620 pages. Available in PDF, EPUB and Kindle. Book excerpt: Extensively revised and updated, this, the second edition of the highly praised text Operation and Modeling of The MOS Transistor, has become a standard in academia and industry. The book provides a thorough treatment of the MOS transistor-the key element of most modern microelectronic chips. KEY FEATURES .Unified, careful treatment. The book covers in depth the development of many important models, ranging from the simple to the sophisticated, with the connection between models clearly identified. Many aspects of modeling are covered, including: dc, ac, small-signal, large-signal transient, quasi-static, nonquasi-static, and noise. .Expanded coverage. New material is included on a number of topics, including charge sheet models, small-dimension effects, noise, and modeling for RF applications. .New chapter on modeling for CAD. A completely new chapter discusses the context, considerations, and pitfalls associated with the development of models for computer-aided design, and describes ways to evaluate them. .Extensive Bibliography. A thoroughly updated, greatly expanded bibliography is provided."
Author : Yannis Tsividis
Publisher : OUP USA
ISBN 13 : 9780199325993
Total Pages : 736 pages
Book Rating : 4.3/5 (259 download)
Download or read book Operation and Modeling of the MOS Transistor written by Yannis Tsividis and published by OUP USA. This book was released on 2013-03-14 with total page 736 pages. Available in PDF, EPUB and Kindle. Book excerpt: Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Extensively revised and updated, the third edition of this highly acclaimed text provides a thorough treatment of the MOS transistor—the key element of modern microelectronic chips.
Author : Yannis Tsividis
Publisher : OUP USA
ISBN 13 : 9780199829835
Total Pages : 752 pages
Book Rating : 4.8/5 (298 download)
Download or read book Operation and Modeling of the MOS Transistor, Third Edtion International Edition written by Yannis Tsividis and published by OUP USA. This book was released on 2012-09-13 with total page 752 pages. Available in PDF, EPUB and Kindle. Book excerpt: Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Extensively revised and updated, the third edition of this highly acclaimed text provides a thorough treatment of the MOS transistor--the key element of modern microelectronic chips.
Author : Paolo Pavan
Publisher : Springer Science & Business Media
ISBN 13 : 1402077319
Total Pages : 139 pages
Book Rating : 4.4/5 (2 download)
Download or read book Floating Gate Devices: Operation and Compact Modeling written by Paolo Pavan and published by Springer Science & Business Media. This book was released on 2004-02-29 with total page 139 pages. Available in PDF, EPUB and Kindle. Book excerpt: Floating Gate Devices: Operation and Compact Modeling focuses on standard operations and compact modeling of memory devices based on Floating Gate architecture. Floating Gate devices are the building blocks of Flash, EPROM, EEPROM memories. Flash memories, which are the most versatile nonvolatile memories, are widely used to store code (BIOS, Communication protocol, Identification code,) and data (solid-state Hard Disks, Flash cards for digital cameras,). The reader, who deals with Floating Gate memory devices at different levels - from test-structures to complex circuit design - will find an essential explanation on device physics and technology, and also circuit issues which must be fully understood while developing a new device. Device engineers will use this book to find simplified models to design new process steps or new architectures. Circuit designers will find the basic theory to understand the use of compact models to validate circuits against process variations and to evaluate the impact of parameter variations on circuit performances. Floating Gate Devices: Operation and Compact Modeling is meant to be a basic tool for designing the next generation of memory devices based on FG technologies.
Author : Christian C. Enz
Publisher : John Wiley & Sons
ISBN 13 : 0470855452
Total Pages : 328 pages
Book Rating : 4.4/5 (78 download)
Download or read book Charge-Based MOS Transistor Modeling written by Christian C. Enz and published by John Wiley & Sons. This book was released on 2006-08-14 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters. Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine: the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties; the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices; the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits. Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering.
Author : Juin Jei Liou
Publisher : Springer Science & Business Media
ISBN 13 : 1461554152
Total Pages : 356 pages
Book Rating : 4.4/5 (615 download)
Download or read book Analysis and Design of MOSFETs written by Juin Jei Liou and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt: Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction is the first book devoted entirely to a broad spectrum of analysis and design issues related to the semiconductor device called metal-oxide semiconductor field-effect transistor (MOSFET). These issues include MOSFET device physics, modeling, numerical simulation, and parameter extraction. The discussion of the application of device simulation to the extraction of MOSFET parameters, such as the threshold voltage, effective channel lengths, and series resistances, is of particular interest to all readers and provides a valuable learning and reference tool for students, researchers and engineers. Analysis and Design of MOSFETs: Modeling, Simulation, and Parameter Extraction, extensively referenced, and containing more than 180 illustrations, is an innovative and integral new book on MOSFETs design technology.
Author : Gennady Gildenblat
Publisher : Springer Science & Business Media
ISBN 13 : 9048186145
Total Pages : 531 pages
Book Rating : 4.0/5 (481 download)
Download or read book Compact Modeling written by Gennady Gildenblat and published by Springer Science & Business Media. This book was released on 2010-06-22 with total page 531 pages. Available in PDF, EPUB and Kindle. Book excerpt: Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.
Author : Yuhua Cheng
Publisher : Springer Science & Business Media
ISBN 13 : 0306470500
Total Pages : 467 pages
Book Rating : 4.3/5 (64 download)
Download or read book MOSFET Modeling & BSIM3 User’s Guide written by Yuhua Cheng and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 467 pages. Available in PDF, EPUB and Kindle. Book excerpt: Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. It is helpful to experts and students alike.
Author : Yogesh Singh Chauhan
Publisher : Elsevier
ISBN 13 : 0323958230
Total Pages : 326 pages
Book Rating : 4.3/5 (239 download)
Download or read book FinFET/GAA Modeling for IC Simulation and Design written by Yogesh Singh Chauhan and published by Elsevier. This book was released on 2024-08-30 with total page 326 pages. Available in PDF, EPUB and Kindle. Book excerpt: FinFET/GAA Modeling for IC Simulation and Design: Using the BSIM-CMG Standard, Second Edition is the first to book to explain FinFET modeling for IC simulation and the industry standard – BSIM-CMG - describing the rush in demand for advancing the technology from planar to 3D architecture as now enabled by the approved industry standard. The book gives a strong foundation on the physics and operation of FinFET, details aspects of the BSIM-CMG model such as surface potential, charge and current calculations, and includes a dedicated chapter on parameter extraction procedures, thus providing a step-by-step approach for the efficient extraction of model parameters. With this book, users will learn Why you should use FinFET, The physics and operation of FinFET Details of the FinFET standard model (BSIM-CMG), Parameter extraction in BSIM-CMG FinFET circuit design and simulation, and more. Authored by the lead inventor and developer of FinFET and developers of the BSIM-CMG standard model, providing an expert’s insight into the specifications of the standard A new edition of the original groundbreaking book on the industry-standard FinFET model—BSIM-CMG New to This Edition Includes a new chapter providing a comprehensive introduction to GAAFET, including motivations, device concepts, structure, benefits, and the industry standard GAAFET model Covers the most recent developments in the BSIM-CMG model Presents an updated RF modeling of FinFET using the BSIM-CMG model including parameter extraction Includes a new chapter on cryogenic modeling
Author :
Publisher :
ISBN 13 :
Total Pages : 316 pages
Book Rating : 4.:/5 (318 download)
Download or read book IEEE Circuits & Devices written by and published by . This book was released on 2006 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Alain C. Diebold
Publisher : CRC Press
ISBN 13 : 0203904540
Total Pages : 703 pages
Book Rating : 4.2/5 (39 download)
Download or read book Handbook of Silicon Semiconductor Metrology written by Alain C. Diebold and published by CRC Press. This book was released on 2001-06-29 with total page 703 pages. Available in PDF, EPUB and Kindle. Book excerpt: Containing more than 300 equations and nearly 500 drawings, photographs, and micrographs, this reference surveys key areas such as optical measurements and in-line calibration methods. It describes cleanroom-based measurement technology used during the manufacture of silicon integrated circuits and covers model-based, critical dimension, overlay
Author :
Publisher :
ISBN 13 :
Total Pages : 2432 pages
Book Rating : 4.F/5 ( download)
Download or read book Books in Print written by and published by . This book was released on 1991 with total page 2432 pages. Available in PDF, EPUB and Kindle. Book excerpt:
