Molecular Beam Epitaxial Growth Of Gan On Si111 Substrate

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Molecular Beam Epitaxy

Author : Mohamed Henini
Publisher : Elsevier
ISBN 13 : 0128121378
Total Pages : 790 pages
Book Rating : 4.1/5 (281 download)

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Book Synopsis Molecular Beam Epitaxy by : Mohamed Henini

Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community

Molecular Beam Epitaxy

Author : Hajime Asahi
Publisher : John Wiley & Sons
ISBN 13 : 111935501X
Total Pages : 510 pages
Book Rating : 4.1/5 (193 download)

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Book Synopsis Molecular Beam Epitaxy by : Hajime Asahi

Download or read book Molecular Beam Epitaxy written by Hajime Asahi and published by John Wiley & Sons. This book was released on 2019-04-15 with total page 510 pages. Available in PDF, EPUB and Kindle. Book excerpt: Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more. Includes chapters on the fundamentals of MBE Covers new challenging researches in MBE and new technologies Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners Part of the Materials for Electronic and Optoelectronic Applications series Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.

Advances in III-V Semiconductor Nanowires and Nanodevices

Author : Jianye Li
Publisher : Bentham Science Publishers
ISBN 13 : 1608050521
Total Pages : 186 pages
Book Rating : 4.6/5 (8 download)

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Book Synopsis Advances in III-V Semiconductor Nanowires and Nanodevices by : Jianye Li

Download or read book Advances in III-V Semiconductor Nanowires and Nanodevices written by Jianye Li and published by Bentham Science Publishers. This book was released on 2011-09-09 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Semiconductor nanowires exhibit novel electronic and optical properties due to their unique one-dimensional structure and quantum confinement effects. In particular, III-V semiconductor nanowires have been of great scientific and technological interest fo"

III-Nitride Electronic Devices

Author :
Publisher : Academic Press
ISBN 13 : 0128175443
Total Pages : 540 pages
Book Rating : 4.1/5 (281 download)

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Book Synopsis III-Nitride Electronic Devices by :

Download or read book III-Nitride Electronic Devices written by and published by Academic Press. This book was released on 2019-10-18 with total page 540 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more.

Metalorganic Vapor Phase Epitaxy (MOVPE)

Author : Stuart Irvine
Publisher : John Wiley & Sons
ISBN 13 : 1119313015
Total Pages : 582 pages
Book Rating : 4.1/5 (193 download)

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Book Synopsis Metalorganic Vapor Phase Epitaxy (MOVPE) by : Stuart Irvine

Download or read book Metalorganic Vapor Phase Epitaxy (MOVPE) written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-10-07 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

Molecular Beam Epitaxy

Author : John Wilfred Orton
Publisher :
ISBN 13 : 0199695822
Total Pages : 529 pages
Book Rating : 4.1/5 (996 download)

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Book Synopsis Molecular Beam Epitaxy by : John Wilfred Orton

Download or read book Molecular Beam Epitaxy written by John Wilfred Orton and published by . This book was released on 2015 with total page 529 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early 'home-made' variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called 'low-dimensional structures' (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.

III-Nitride Based Light Emitting Diodes and Applications

Author : Tae-Yeon Seong
Publisher : Springer Science & Business Media
ISBN 13 : 9400758634
Total Pages : 434 pages
Book Rating : 4.4/5 (7 download)

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Book Synopsis III-Nitride Based Light Emitting Diodes and Applications by : Tae-Yeon Seong

Download or read book III-Nitride Based Light Emitting Diodes and Applications written by Tae-Yeon Seong and published by Springer Science & Business Media. This book was released on 2014-07-08 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: Light emitting diodes (LEDs) are already used in traffic signals, signage lighting, and automotive applications. However, its ultimate goal is to replace traditional illumination through LED lamps since LED lighting significantly reduces energy consumption and cuts down on carbon-dioxide emission. Despite dramatic advances in LED technologies (e.g., growth, doping and processing technologies), however, there remain critical issues for further improvements yet to be achieved for the realization of solid-state lighting. This book aims to provide the readers with some contemporary LED issues, which have not been comprehensively discussed in the published books and, on which the performance of LEDs is seriously dependent. For example, most importantly, there must be a breakthrough in the growth of high-quality nitride semiconductor epitaxial layers with a low density of dislocations, in particular, in the growth of Al-rich and and In-rich GaN-based semiconductors. The materials quality is directly dependent on the substrates used, such as sapphire, Si, etc. In addition, efficiency droop, growth on different orientations and polarization are also important. Chip processing and packaging technologies are key issues. This book presents a comprehensive review of contemporary LED issues. Given the interest and importance of future research in nitride semiconducting materials and solid state lighting applications, the contents are very timely. The book is composed of chapters written by leading researchers in III-nitride semiconducting materials and device technology. This book will be of interest to scientists and engineers working on LEDs for lighting applications. Postgraduate researchers working on LEDs will also benefit from the issues this book provides.

Epitaxial Growth of III-Nitride Compounds

Author : Takashi Matsuoka
Publisher : Springer
ISBN 13 : 3319766414
Total Pages : 228 pages
Book Rating : 4.3/5 (197 download)

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Book Synopsis Epitaxial Growth of III-Nitride Compounds by : Takashi Matsuoka

Download or read book Epitaxial Growth of III-Nitride Compounds written by Takashi Matsuoka and published by Springer. This book was released on 2018-04-17 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents extensive information on the mechanisms of epitaxial growth in III-nitride compounds, drawing on a state-of-the-art computational approach that combines ab initio calculations, empirical interatomic potentials, and Monte Carlo simulations to do so. It discusses important theoretical aspects of surface structures and elemental growth processes during the epitaxial growth of III-nitride compounds. In addition, it discusses advanced fundamental structural and electronic properties, surface structures, fundamental growth processes and novel behavior of thin films in III-nitride semiconductors. As such, it will appeal to all researchers, engineers and graduate students seeking detailed information on crystal growth and its application to III-nitride compounds.

21st Century Nanoscience – A Handbook

Author : Klaus D. Sattler
Publisher : CRC Press
ISBN 13 : 1000702723
Total Pages : 864 pages
Book Rating : 4.0/5 (7 download)

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Book Synopsis 21st Century Nanoscience – A Handbook by : Klaus D. Sattler

Download or read book 21st Century Nanoscience – A Handbook written by Klaus D. Sattler and published by CRC Press. This book was released on 2020-11-26 with total page 864 pages. Available in PDF, EPUB and Kindle. Book excerpt: 21st Century Nanoscience - A Handbook: Nanophotonics, Nanoelectronics, and Nanoplasmonics (Volume 6) will be the most comprehensive, up-to-date large reference work for the field of nanoscience. Handbook of Nanophysics by the same editor published in the fall of 2010 and was embraced as the first comprehensive reference to consider both fundamental and applied aspects of nanophysics. This follow-up project has been conceived as a necessary expansion and full update that considers the significant advances made in the field since 2010. It goes well beyond the physics as warranted by recent developments in the field. This sixth volume in a ten-volume set covers nanophotonics, nanoelectronics, and nanoplasmonics. Key Features: Provides the most comprehensive, up-to-date large reference work for the field. Chapters written by international experts in the field. Emphasises presentation and real results and applications. This handbook distinguishes itself from other works by its breadth of coverage, readability and timely topics. The intended readership is very broad, from students and instructors to engineers, physicists, chemists, biologists, biomedical researchers, industry professionals, governmental scientists, and others whose work is impacted by nanotechnology. It will be an indispensable resource in academic, government, and industry libraries worldwide. The fields impacted by nanophysics extend from materials science and engineering to biotechnology, biomedical engineering, medicine, electrical engineering, pharmaceutical science, computer technology, aerospace engineering, mechanical engineering, food science, and beyond.

Iii-Nitride Devices and Nanoengineering

Author : Zhe Chuan Feng
Publisher : Imperial College Press
ISBN 13 : 1848162243
Total Pages : 477 pages
Book Rating : 4.8/5 (481 download)

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Book Synopsis Iii-Nitride Devices and Nanoengineering by : Zhe Chuan Feng

Download or read book Iii-Nitride Devices and Nanoengineering written by Zhe Chuan Feng and published by Imperial College Press. This book was released on 2008 with total page 477 pages. Available in PDF, EPUB and Kindle. Book excerpt: Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.

Handbook on Synthesis Strategies for Advanced Materials

Author : A. K. Tyagi
Publisher : Springer Nature
ISBN 13 : 9811618925
Total Pages : 922 pages
Book Rating : 4.8/5 (116 download)

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Book Synopsis Handbook on Synthesis Strategies for Advanced Materials by : A. K. Tyagi

Download or read book Handbook on Synthesis Strategies for Advanced Materials written by A. K. Tyagi and published by Springer Nature. This book was released on 2021-10-22 with total page 922 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents state-of-the-art coverage of synthesis of advanced functional materials. Unconventional synthetic routes play an important role in the synthesis of advanced materials as many new materials are metastable and cannot be synthesized by conventional methods. This book presents various synthesis methods such as conventional solid-state method, combustion method, a range of soft chemical methods, template synthesis, molecular precursor method, microwave synthesis, sono-chemical method and high-pressure synthesis. It provides a comprehensive overview of synthesis methods and covers a variety of materials, including ceramics, films, glass, carbon-based, and metallic materials. Many techniques for processing and surface functionalization are also discussed. Several engineering aspects of materials synthesis are also included. The contents of this book are useful for researchers and professionals working in the areas of materials and chemistry.

Technology of Gallium Nitride Crystal Growth

Author : Dirk Ehrentraut
Publisher : Springer Science & Business Media
ISBN 13 : 3642048307
Total Pages : 337 pages
Book Rating : 4.6/5 (42 download)

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Book Synopsis Technology of Gallium Nitride Crystal Growth by : Dirk Ehrentraut

Download or read book Technology of Gallium Nitride Crystal Growth written by Dirk Ehrentraut and published by Springer Science & Business Media. This book was released on 2010-06-14 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.

Comprehensive Semiconductor Science and Technology

Author :
Publisher : Newnes
ISBN 13 : 0080932282
Total Pages : 3572 pages
Book Rating : 4.0/5 (89 download)

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Book Synopsis Comprehensive Semiconductor Science and Technology by :

Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts

Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing

Author : D. Misra
Publisher : The Electrochemical Society
ISBN 13 : 1607687127
Total Pages : 365 pages
Book Rating : 4.6/5 (76 download)

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Book Synopsis Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing by : D. Misra

Download or read book Dielectrics for Nanosystems 7: Materials Science, Processing, Reliability, and Manufacturing written by D. Misra and published by The Electrochemical Society. This book was released on with total page 365 pages. Available in PDF, EPUB and Kindle. Book excerpt:

GaN Technology

Author : Maurizio Di Paolo Emilio
Publisher : Springer Nature
ISBN 13 : 3031632389
Total Pages : 388 pages
Book Rating : 4.0/5 (316 download)

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Book Synopsis GaN Technology by : Maurizio Di Paolo Emilio

Download or read book GaN Technology written by Maurizio Di Paolo Emilio and published by Springer Nature. This book was released on with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Gallium Nitride (GaN)

Author : Farid Medjdoub
Publisher : CRC Press
ISBN 13 : 1482220040
Total Pages : 372 pages
Book Rating : 4.4/5 (822 download)

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Book Synopsis Gallium Nitride (GaN) by : Farid Medjdoub

Download or read book Gallium Nitride (GaN) written by Farid Medjdoub and published by CRC Press. This book was released on 2017-12-19 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.

Bismuth-Containing Alloys and Nanostructures

Author : Shumin Wang
Publisher : Springer
ISBN 13 : 9811380783
Total Pages : 403 pages
Book Rating : 4.8/5 (113 download)

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Book Synopsis Bismuth-Containing Alloys and Nanostructures by : Shumin Wang

Download or read book Bismuth-Containing Alloys and Nanostructures written by Shumin Wang and published by Springer. This book was released on 2019-07-03 with total page 403 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on novel bismuth-containing alloys and nanostructures, covering a wide range of materials from semiconductors, topological insulators, silica optical fibers and to multiferroic materials. It provides a timely overview of bismuth alloys and nanostructures, from material synthesis and physical properties to device applications and also includes the latest research findings. Bismuth is considered to be a sustainable and environmentally friendly element, and has received increasing attention in a variety of innovative research areas in recent years. The book is intended as a reference resource and textbook for graduate students and researchers working in these fields.