International Electron Devices Meeting, 2002, San Francisco, CA, December 8-11, 2002

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Publisher :
ISBN 13 :
Total Pages : 957 pages
Book Rating : 4.:/5 (939 download)

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Book Synopsis International Electron Devices Meeting, 2002, San Francisco, CA, December 8-11, 2002 by :

Download or read book International Electron Devices Meeting, 2002, San Francisco, CA, December 8-11, 2002 written by and published by . This book was released on 2002 with total page 957 pages. Available in PDF, EPUB and Kindle. Book excerpt:

International Electron Devices Meeting 2002

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Publisher :
ISBN 13 : 9780780374621
Total Pages : 1000 pages
Book Rating : 4.3/5 (746 download)

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Book Synopsis International Electron Devices Meeting 2002 by :

Download or read book International Electron Devices Meeting 2002 written by and published by . This book was released on 2002 with total page 1000 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Advanced Short-time Thermal Processing for Si-based CMOS Devices 2

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Publisher : The Electrochemical Society
ISBN 13 : 9781566774062
Total Pages : 444 pages
Book Rating : 4.7/5 (74 download)

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Book Synopsis Advanced Short-time Thermal Processing for Si-based CMOS Devices 2 by : Mehmet C. Öztürk

Download or read book Advanced Short-time Thermal Processing for Si-based CMOS Devices 2 written by Mehmet C. Öztürk and published by The Electrochemical Society. This book was released on 2004 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Micro- and Nanoelectronics

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Publisher : CRC Press
ISBN 13 : 1351831348
Total Pages : 388 pages
Book Rating : 4.3/5 (518 download)

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Book Synopsis Micro- and Nanoelectronics by : Tomasz Brozek

Download or read book Micro- and Nanoelectronics written by Tomasz Brozek and published by CRC Press. This book was released on 2017-12-19 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt: Micro- and Nanoelectronics: Emerging Device Challenges and Solutions presents a comprehensive overview of the current state of the art of micro- and nanoelectronics, covering the field from fundamental science and material properties to novel ways of making nanodevices. Containing contributions from experts in both industry and academia, this cutting-edge text: Discusses emerging silicon devices for CMOS technologies, fully depleted device architectures, characteristics, and scaling Explains the specifics of silicon compound devices (SiGe, SiC) and their unique properties Explores various options for post-CMOS nanoelectronics, such as spintronic devices and nanoionic switches Describes the latest developments in carbon nanotubes, iii-v devices structures, and more Micro- and Nanoelectronics: Emerging Device Challenges and Solutions provides an excellent representation of a complex engineering field, examining emerging materials and device architecture alternatives with the potential to shape the future of nanotechnology.

Physics of Semiconductor Devices

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Publisher : Alpha Science Int'l Ltd.
ISBN 13 : 9788173195679
Total Pages : 1310 pages
Book Rating : 4.1/5 (956 download)

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Book Synopsis Physics of Semiconductor Devices by : K. N. Bhat

Download or read book Physics of Semiconductor Devices written by K. N. Bhat and published by Alpha Science Int'l Ltd.. This book was released on 2004 with total page 1310 pages. Available in PDF, EPUB and Kindle. Book excerpt: Contributed papers of the workshop held at IIT, Madras, in 2003.

75th Anniversary of the Transistor

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Publisher : John Wiley & Sons
ISBN 13 : 139420244X
Total Pages : 469 pages
Book Rating : 4.3/5 (942 download)

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Book Synopsis 75th Anniversary of the Transistor by : Arokia Nathan

Download or read book 75th Anniversary of the Transistor written by Arokia Nathan and published by John Wiley & Sons. This book was released on 2023-08-01 with total page 469 pages. Available in PDF, EPUB and Kindle. Book excerpt: 75th Anniversary of the Transistor 75th anniversary commemorative volume reflecting the transistor's development since inception to current state of the art 75th Anniversary of the Transistor is a commemorative anniversary volume to celebrate the invention of the transistor. The anniversary volume was conceived by the IEEE Electron Devices Society (EDS) to provide comprehensive yet compact coverage of the historical perspectives underlying the invention of the transistor and its subsequent evolution into a multitude of integration and manufacturing technologies and applications. The book reflects the transistor's development since inception to the current state of the art that continues to enable scaling to very large-scale integrated circuits of higher functionality and speed. The stages in this evolution covered are in chronological order to reflect historical developments. Narratives and experiences are provided by a select number of venerated industry and academic leaders, and retired veterans, of the semiconductor industry. 75th Anniversary of the Transistor highlights: Historical perspectives of the state-of-the-art pre-solid-state-transistor world (pre-1947) leading to the invention of the transistor Invention of the bipolar junction transistor (BJT) and analytical formulations by Shockley (1948) and their impact on the semiconductor industry Large scale integration, Moore's Law (1965) and transistor scaling (1974), and MOS/LSI, including flash memories — SRAMs, DRAMs (1963), and the Toshiba NAND flash memory (1989) Image sensors (1986), including charge-coupled devices, and related microsensor applications With comprehensive yet succinct and accessible coverage of one of the cornerstones of modern technology, 75th Anniversary of the Transistor is an essential reference for engineers, researchers, and undergraduate students looking for historical perspective from leaders in the field.

Handbook for III-V High Electron Mobility Transistor Technologies

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Publisher : CRC Press
ISBN 13 : 0429862520
Total Pages : 446 pages
Book Rating : 4.4/5 (298 download)

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Book Synopsis Handbook for III-V High Electron Mobility Transistor Technologies by : D. Nirmal

Download or read book Handbook for III-V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 446 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Circuits and Applications Using Silicon Heterostructure Devices

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Publisher : CRC Press
ISBN 13 : 1420066951
Total Pages : 360 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Circuits and Applications Using Silicon Heterostructure Devices by : John D. Cressler

Download or read book Circuits and Applications Using Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt: No matter how you slice it, semiconductor devices power the communications revolution. Skeptical? Imagine for a moment that you could flip a switch and instantly remove all the integrated circuits from planet Earth. A moment’s reflection would convince you that there is not a single field of human endeavor that would not come to a grinding halt, be it commerce, agriculture, education, medicine, or entertainment. Life, as we have come to expect it, would simply cease to exist. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume covers SiGe circuit applications in the real world. Edited by John D. Cressler, with contributions from leading experts in the field, this book presents a broad overview of the merits of SiGe for emerging communications systems. Coverage spans new techniques for improved LNA design, RF to millimeter-wave IC design, SiGe MMICs, SiGe Millimeter-Wave ICs, and wireless building blocks using SiGe HBTs. The book provides a glimpse into the future, as envisioned by industry leaders.

Field Effect Transistors, A Comprehensive Overview

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Publisher : John Wiley & Sons
ISBN 13 : 1119155800
Total Pages : 565 pages
Book Rating : 4.1/5 (191 download)

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Book Synopsis Field Effect Transistors, A Comprehensive Overview by : Pouya Valizadeh

Download or read book Field Effect Transistors, A Comprehensive Overview written by Pouya Valizadeh and published by John Wiley & Sons. This book was released on 2016-02-01 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses modern-day Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) and future trends of transistor devices. This book provides an overview of Field Effect Transistors (FETs) by discussing the basic principles of FETs and exploring the latest technological developments in the field. It covers and connects a wide spectrum of topics related to semiconductor device physics, physics of transistors, and advanced transistor concepts. This book contains six chapters. Chapter 1 discusses electronic materials and charge. Chapter 2 examines junctions, discusses contacts under thermal-equilibrium, metal-semiconductor contacts, and metal-insulator-semiconductor systems. Chapter 3 covers traditional planar Metal Oxide Semiconductor Field Effect Transistors (MOSFETs). Chapter 4 describes scaling-driving technological variations and novel dimensions of MOSFETs. Chapter 5 analyzes Heterojunction Field Effect Transistors (FETs) and also discusses the challenges and rewards of heteroepitaxy. Finally, Chapter 6 examines FETs at molecular scales. Links the discussion of contemporary transistor devices to physical processes Material has been class-tested in undergraduate and graduate courses on the design of integrated circuit components taught by the author Contains examples and end-of-chapter problems Field Effect Transistors, A Comprehensive Overview: From Basic Concepts to Novel Technologies is a reference for senior undergraduate / graduate students and professional engineers needing insight into physics of operation of modern FETs. Pouya Valizadeh is Associate Professor in the Department of Electrical and Computer Engineering at Concordia University in Quebec, Canada. He received B.S. and M.S. degrees with honors from the University of Tehran and Ph.D. degree from The University of Michigan (Ann Arbor) all in Electrical Engineering in 1997, 1999, and 2005, respectively. Over the past decade, Dr. Valizadeh has taught numerous sections of five different courses covering topics such as semiconductor process technology, semiconductor materials and their properties, advanced solid state devices, transistor design for modern CMOS technology, and high speed transistors.

Nitride Wide Bandgap Semiconductor Material and Electronic Devices

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Publisher : CRC Press
ISBN 13 : 1315351838
Total Pages : 325 pages
Book Rating : 4.3/5 (153 download)

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Book Synopsis Nitride Wide Bandgap Semiconductor Material and Electronic Devices by : Yue Hao

Download or read book Nitride Wide Bandgap Semiconductor Material and Electronic Devices written by Yue Hao and published by CRC Press. This book was released on 2016-11-03 with total page 325 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

Computational Finite Element Methods in Nanotechnology

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Publisher : CRC Press
ISBN 13 : 135183259X
Total Pages : 647 pages
Book Rating : 4.3/5 (518 download)

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Book Synopsis Computational Finite Element Methods in Nanotechnology by : Sarhan M. Musa

Download or read book Computational Finite Element Methods in Nanotechnology written by Sarhan M. Musa and published by CRC Press. This book was released on 2017-12-19 with total page 647 pages. Available in PDF, EPUB and Kindle. Book excerpt: Computational Finite Element Methods in Nanotechnology demonstrates the capabilities of finite element methods in nanotechnology for a range of fields. Bringing together contributions from researchers around the world, it covers key concepts as well as cutting-edge research and applications to inspire new developments and future interdisciplinary research. In particular, it emphasizes the importance of finite element methods (FEMs) for computational tools in the development of efficient nanoscale systems. The book explores a variety of topics, including: A novel FE-based thermo-electrical-mechanical-coupled model to study mechanical stress, temperature, and electric fields in nano- and microelectronics The integration of distributed element, lumped element, and system-level methods for the design, modeling, and simulation of nano- and micro-electromechanical systems (N/MEMS) Challenges in the simulation of nanorobotic systems and macro-dimensions The simulation of structures and processes such as dislocations, growth of epitaxial films, and precipitation Modeling of self-positioning nanostructures, nanocomposites, and carbon nanotubes and their composites Progress in using FEM to analyze the electric field formed in needleless electrospinning How molecular dynamic (MD) simulations can be integrated into the FEM Applications of finite element analysis in nanomaterials and systems used in medicine, dentistry, biotechnology, and other areas The book includes numerous examples and case studies, as well as recent applications of microscale and nanoscale modeling systems with FEMs using COMSOL Multiphysics® and MATLAB®. A one-stop reference for professionals, researchers, and students, this is also an accessible introduction to computational FEMs in nanotechnology for those new to the field.

Nanoscale Devices

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Publisher : CRC Press
ISBN 13 : 1351670212
Total Pages : 410 pages
Book Rating : 4.3/5 (516 download)

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Book Synopsis Nanoscale Devices by : Brajesh Kumar Kaushik

Download or read book Nanoscale Devices written by Brajesh Kumar Kaushik and published by CRC Press. This book was released on 2018-11-16 with total page 410 pages. Available in PDF, EPUB and Kindle. Book excerpt: The primary aim of this book is to discuss various aspects of nanoscale device design and their applications including transport mechanism, modeling, and circuit applications. . Provides a platform for modeling and analysis of state-of-the-art devices in nanoscale regime, reviews issues related to optimizing the sub-nanometer device performance and addresses simulation aspect and/or fabrication process of devices Also, includes design problems at the end of each chapter

Extreme Environment Electronics

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Publisher : CRC Press
ISBN 13 : 143987431X
Total Pages : 1041 pages
Book Rating : 4.4/5 (398 download)

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Book Synopsis Extreme Environment Electronics by : John D. Cressler

Download or read book Extreme Environment Electronics written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 1041 pages. Available in PDF, EPUB and Kindle. Book excerpt: Unfriendly to conventional electronic devices, circuits, and systems, extreme environments represent a serious challenge to designers and mission architects. The first truly comprehensive guide to this specialized field, Extreme Environment Electronics explains the essential aspects of designing and using devices, circuits, and electronic systems intended to operate in extreme environments, including across wide temperature ranges and in radiation-intense scenarios such as space. The Definitive Guide to Extreme Environment Electronics Featuring contributions by some of the world’s foremost experts in extreme environment electronics, the book provides in-depth information on a wide array of topics. It begins by describing the extreme conditions and then delves into a description of suitable semiconductor technologies and the modeling of devices within those technologies. It also discusses reliability issues and failure mechanisms that readers need to be aware of, as well as best practices for the design of these electronics. Continuing beyond just the "paper design" of building blocks, the book rounds out coverage of the design realization process with verification techniques and chapters on electronic packaging for extreme environments. The final set of chapters describes actual chip-level designs for applications in energy and space exploration. Requiring only a basic background in electronics, the book combines theoretical and practical aspects in each self-contained chapter. Appendices supply additional background material. With its broad coverage and depth, and the expertise of the contributing authors, this is an invaluable reference for engineers, scientists, and technical managers, as well as researchers and graduate students. A hands-on resource, it explores what is required to successfully operate electronics in the most demanding conditions.

MEMS Materials and Processes Handbook

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Publisher : Springer Science & Business Media
ISBN 13 : 0387473181
Total Pages : 1211 pages
Book Rating : 4.3/5 (874 download)

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Book Synopsis MEMS Materials and Processes Handbook by : Reza Ghodssi

Download or read book MEMS Materials and Processes Handbook written by Reza Ghodssi and published by Springer Science & Business Media. This book was released on 2011-03-18 with total page 1211 pages. Available in PDF, EPUB and Kindle. Book excerpt: MEMs Materials and Processes Handbook" is a comprehensive reference for researchers searching for new materials, properties of known materials, or specific processes available for MEMS fabrication. The content is separated into distinct sections on "Materials" and "Processes". The extensive Material Selection Guide" and a "Material Database" guides the reader through the selection of appropriate materials for the required task at hand. The "Processes" section of the book is organized as a catalog of various microfabrication processes, each with a brief introduction to the technology, as well as examples of common uses in MEMs.

Physical Model and Applications of High-Efficiency Electro-Optical Conversion Devices - Volume II

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Publisher : Frontiers Media SA
ISBN 13 : 2832519679
Total Pages : 97 pages
Book Rating : 4.8/5 (325 download)

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Book Synopsis Physical Model and Applications of High-Efficiency Electro-Optical Conversion Devices - Volume II by : Feng Chi

Download or read book Physical Model and Applications of High-Efficiency Electro-Optical Conversion Devices - Volume II written by Feng Chi and published by Frontiers Media SA. This book was released on 2023-03-31 with total page 97 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Noise Coupling in System-on-Chip

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Publisher : CRC Press
ISBN 13 : 1138031615
Total Pages : 519 pages
Book Rating : 4.1/5 (38 download)

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Book Synopsis Noise Coupling in System-on-Chip by : Thomas Noulis

Download or read book Noise Coupling in System-on-Chip written by Thomas Noulis and published by CRC Press. This book was released on 2018-01-09 with total page 519 pages. Available in PDF, EPUB and Kindle. Book excerpt: Noise Coupling is the root-cause of the majority of Systems on Chip (SoC) product fails. The book discusses a breakthrough substrate coupling analysis flow and modelling toolset, addressing the needs of the design community. The flow provides capability to analyze noise components, propagating through the substrate, the parasitic interconnects and the package. Using this book, the reader can analyze and avoid complex noise coupling that degrades RF and mixed signal design performance, while reducing the need for conservative design practices. With chapters written by leading international experts in the field, novel methodologies are provided to identify noise coupling in silicon. It additionally features case studies that can be found in any modern CMOS SoC product for mobile communications, automotive applications and readout front ends.

14 MeV Neutrons

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Publisher : CRC Press
ISBN 13 : 1482238012
Total Pages : 500 pages
Book Rating : 4.4/5 (822 download)

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Book Synopsis 14 MeV Neutrons by : Vladivoj Valkovic

Download or read book 14 MeV Neutrons written by Vladivoj Valkovic and published by CRC Press. This book was released on 2015-08-25 with total page 500 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite the often difficult and time-consuming effort of performing experiments with fast (14 MeV) neutrons, these neutrons can offer special insight into nucleus and other materials because of the absence of charge. 14 MeV Neutrons: Physics and Applications explores fast neutrons in basic science and applications to problems in medicine, the envir