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Inp Ingaas Heterojunction Bipolar Transistors And Field Effect Transistors Grown By Gas Source Molecular Beam Epitaxy
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Book Synopsis InP/InGaAs Heterojunction Bipolar Transistors and Field Effect Transistors Grown by Gas-source Molecular Beam Epitaxy by : Hao-Chung Kuo
Download or read book InP/InGaAs Heterojunction Bipolar Transistors and Field Effect Transistors Grown by Gas-source Molecular Beam Epitaxy written by Hao-Chung Kuo and published by . This book was released on 1999 with total page 190 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Molecular Beam Epitaxy by : John Orton
Download or read book Molecular Beam Epitaxy written by John Orton and published by OUP Oxford. This book was released on 2015-06-25 with total page 529 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early âhome-madeâ variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called âlow-dimensional structuresâ (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.
Book Synopsis Antimonide-based Field-effect Transistors and Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy by : Chi-chih Liao
Download or read book Antimonide-based Field-effect Transistors and Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy written by Chi-chih Liao and published by . This book was released on 2011 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: For the development of novel high-speed devices, the epitaxial growth of antimonide-based compounds and devices, including field effect transistors (FETs) and hetero-junction bipolar transistors (HBTs), was explored using gas-source molecular beam epitaxy (MBE). The first and second parts of the dissertation detail the growth of InAsSb and InGaSb as the channel materials for n- and p-type FETs, respectively. Both compounds were grown metamorphically on InP substrates with a composite AlSb/AlAs0.5Sb0.5 buffer layer, which was proved to be effective in enhancing the epitaxial quality. By optimizing the growth conditions, the intrinsic carrier mobilities of n-type InAsSb and p-type pseudomorphic InGaSb quantum wells could reach 18000 and 600 cm2/V-s at room temperature, respectively. InAsSb FET showed a high transconductance of 350 mS/mm, which indicated the high potential in the high-speed applications. The third part of the dissertation describes the modification of the emitter-base junction of ultra-fast type-II GaAsSb-based HBTs in order to eliminate the carrier blocking and enhance the current gain. InAlP was used to replace the InP emitter and form a type-I emitter-base junction. Results for large devices show that this modification could improve DC current gain from 80 to 120. The results indicate that type-I/II InAlP/GaAsSb HBTs are promising to achieve better radio-frequency (RF) performance with higher current driving capability.
Book Synopsis InP/InGaAs Heterojunction Bipolar Transistors Grown on Ge/P Co-implanted InP Substrates by Metal-Organic Molecular Bean Epitaxy by : W. J. Sung
Download or read book InP/InGaAs Heterojunction Bipolar Transistors Grown on Ge/P Co-implanted InP Substrates by Metal-Organic Molecular Bean Epitaxy written by W. J. Sung and published by . This book was released on 2002 with total page 3 pages. Available in PDF, EPUB and Kindle. Book excerpt: InP/InGaAs Heterojunction Bipolar Transistors (HBTs) have demonstrated excellent high- frequency performance 1-4 and are widely used for optical fiber transmission 5-7. However; the current mesa HBT structure utilizes a very thick, highly doped n+InGaAs layer for the subcollector contact. This added mesa height makes multilevel interconnection processes more difficult, which impedes the capability of fabricating compact integrated circuits. In addition, rip has a much higher thermal conductivity than InGaAs, so heat dissipation may be a problem for densely packed circuits with the above structure. This paper reports on InP/InGaAs HBTs grown on Ge/P co-implanted substrates by Metal-Organic Molecular Beam Epitaxy (MOMBE). This embedded subcollector HBT structure offers several advantages for the fabrication of large-scale integrated circuits on InP substrates.
Book Synopsis The Fabrication of InGaAs/InAlAs/InP Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy by : Wai Lee
Download or read book The Fabrication of InGaAs/InAlAs/InP Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy written by Wai Lee and published by . This book was released on 1986 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis International Aerospace Abstracts by :
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1999 with total page 974 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1989 with total page 988 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Resonant Tunneling at Room Temperature in Carbon-doped Base InP/InGaAs/InP Composite Collector Heterojunction Bipolar Transistors Grown by Gas-source Molecular Beam Epitaxy by : Brian Gerard Moser
Download or read book Resonant Tunneling at Room Temperature in Carbon-doped Base InP/InGaAs/InP Composite Collector Heterojunction Bipolar Transistors Grown by Gas-source Molecular Beam Epitaxy written by Brian Gerard Moser and published by . This book was released on 2000 with total page 112 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Carbon-doped InP/InGaAs Heterojunction Bipolar Transistors for High Speed Applications by : Russell C. Gee
Download or read book Carbon-doped InP/InGaAs Heterojunction Bipolar Transistors for High Speed Applications written by Russell C. Gee and published by . This book was released on 1993 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Growth and Characterization of High-speed C-doped Base InP/InGaAs Heterojunction Bipolar Transistors Using Metalorganic Molecular Beam Epitaxy by : Sunil Thomas
Download or read book Growth and Characterization of High-speed C-doped Base InP/InGaAs Heterojunction Bipolar Transistors Using Metalorganic Molecular Beam Epitaxy written by Sunil Thomas and published by . This book was released on 1998 with total page 174 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis InGaAs-InAIAs N-P-N Double Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy by : Pui Leng Lam
Download or read book InGaAs-InAIAs N-P-N Double Heterojunction Bipolar Transistors Grown by Molecular Beam Epitaxy written by Pui Leng Lam and published by . This book was released on 1995 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Journal of the Physical Society of Japan by : Nihon Butsuri Gakkai
Download or read book Journal of the Physical Society of Japan written by Nihon Butsuri Gakkai and published by . This book was released on 1996 with total page 956 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ceramic Abstracts by : American Ceramic Society
Download or read book Ceramic Abstracts written by American Ceramic Society and published by . This book was released on 1996 with total page 1000 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Confined Electrons and Photons by : Elias Burstein
Download or read book Confined Electrons and Photons written by Elias Burstein and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 900 pages. Available in PDF, EPUB and Kindle. Book excerpt: The optical properties of semiconductors have played an important role since the identification of semiconductors as "small" bandgap materials in the thinies, due both to their fundamental interest as a class of solids baving specific optical propenies and to their many important applications. On the former aspect we can cite the fundamental edge absorption and its assignment to direct or indirect transitions, many-body effects as revealed by exciton formation and photoconductivity. On the latter aspect, large-scale applications sucb as LEDs and lasers, photovoltaic converters, photodetectors, electro-optics and non-linear optic devices, come to mind. The eighties saw a revitalization of the whole field due to the advent of heterostructures of lower-dimensionality, mainly two-dimensional quantum wells, which through their enhanced photon-matter interaction yielded new devices with unsurpassed performance. Although many of the basic phenomena were evidenced through the seventies, it was this impact on applications which in turn led to such a massive investment in fabrication tools, thanks to which many new structures and materials were studied, yielding funher advances in fundamental physics.
Download or read book InP HBTs written by B. Jalali and published by Artech House Materials Science. This book was released on 1995 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work provides a comprehensive overview of current InP HBT technology and its applications. Each chapter is written by a world-renowned expert on topics including crystal growth, processing, physics, modelling, and digital and analog circuits.
Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1058 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2668 pages. Available in PDF, EPUB and Kindle. Book excerpt:
