Highly Integrated Gate Drivers For Si And Gan Power Transistors

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Highly Integrated Gate Drivers for Si and GaN Power Transistors

Author : Achim Seidel
Publisher : Springer Nature
ISBN 13 : 3030689409
Total Pages : 137 pages
Book Rating : 4.0/5 (36 download)

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Book Synopsis Highly Integrated Gate Drivers for Si and GaN Power Transistors by : Achim Seidel

Download or read book Highly Integrated Gate Drivers for Si and GaN Power Transistors written by Achim Seidel and published by Springer Nature. This book was released on 2021-03-31 with total page 137 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explores integrated gate drivers with emphasis on new gallium nitride (GaN) power transistors, which offer fast switching along with minimum switching losses. It serves as a comprehensive, all-in-one source for gate driver IC design, written in handbook style with systematic guidelines. The authors cover the full range from fundamentals to implementation details including topics like power stages, various kinds of gate drivers (resonant, non-resonant, current-source, voltage-source), gate drive schemes, driver supply, gate loop, gate driver power efficiency and comparison silicon versus GaN transistors. Solutions are presented on the system and circuit level for highly integrated gate drivers. Coverage includes miniaturization by higher integration of subfunctions onto the IC (buffer capacitors), as well as more efficient switching by a multi-level approach, which also improves robustness in case of extremely fast switching transitions. The discussion also includes a concept for robust operation in the highly relevant case that the gate driver is placed in distance to the power transistor. All results are widely applicable to achieve highly compact, energy efficient, and cost-effective power electronics solutions.

GaN Transistors for Efficient Power Conversion

Author : Alex Lidow
Publisher : John Wiley & Sons
ISBN 13 : 1118844769
Total Pages : 266 pages
Book Rating : 4.1/5 (188 download)

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Book Synopsis GaN Transistors for Efficient Power Conversion by : Alex Lidow

Download or read book GaN Transistors for Efficient Power Conversion written by Alex Lidow and published by John Wiley & Sons. This book was released on 2014-09-15 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium nitride (GaN) is an emerging technology that promises to displace silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices offer superior conductivity and switching characteristics, allowing designers to greatly reduce system power losses, size, weight, and cost. This timely second edition has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. With higher-frequency switching capabilities, GaN devices offer the chance to increase efficiency in existing applications such as DC–DC conversion, while opening possibilities for new applications including wireless power transfer and envelope tracking. This book is an essential learning tool and reference guide to enable power conversion engineers to design energy-efficient, smaller and more cost-effective products using GaN transistors. Key features: Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications. Contains useful discussions on device–circuit interactions, which are highly valuable since the new and high performance GaN power transistors require thoughtfully designed drive/control circuits in order to fully achieve their performance potential. Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors – see companion website for further details. A valuable learning resource for professional engineers and systems designers needing to fully understand new devices as well as electrical engineering students.

High Frequency MOSFET Gate Drivers

Author : ZhiLiang Zhang
Publisher : IET
ISBN 13 : 1785613650
Total Pages : 296 pages
Book Rating : 4.7/5 (856 download)

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Book Synopsis High Frequency MOSFET Gate Drivers by : ZhiLiang Zhang

Download or read book High Frequency MOSFET Gate Drivers written by ZhiLiang Zhang and published by IET. This book was released on 2017-09-14 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes advanced high frequency power MOSFET gate driver technologies, which serve a critical role between control and power devices. A gate driver is a power amplifier that accepts a low-power input from a controller integrated circuit and produces a high-current drive input for the gate of a high-power transistor such as a power MOSFET (metal-oxide-semiconductor field-effect transistor).

Monolithic Integration in E-Mode GaN Technology

Author : Maik Peter Kaufmann
Publisher : Springer Nature
ISBN 13 : 3031156250
Total Pages : 185 pages
Book Rating : 4.0/5 (311 download)

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Book Synopsis Monolithic Integration in E-Mode GaN Technology by : Maik Peter Kaufmann

Download or read book Monolithic Integration in E-Mode GaN Technology written by Maik Peter Kaufmann and published by Springer Nature. This book was released on 2022-10-26 with total page 185 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a comprehensive, all-in-one source on design of monolithic GaN power ICs. It is written in handbook style with systematic guidelines and includes implementation examples. It covers the full range from technology fundamentals to implementation details including design techniques specific for GaN technology. It provides a detailed loss analysis based on comparative measurements between silicon and GaN based converters to provide an understanding of the relations between design choices and results which can be transferred to other power converter systems.

Power Electronics Handbook

Author : Muhammad H. Rashid
Publisher : Elsevier
ISBN 13 : 0323993435
Total Pages : 1472 pages
Book Rating : 4.3/5 (239 download)

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Book Synopsis Power Electronics Handbook by : Muhammad H. Rashid

Download or read book Power Electronics Handbook written by Muhammad H. Rashid and published by Elsevier. This book was released on 2023-09-27 with total page 1472 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power Electronics Handbook, Fifth Edition delivers an expert guide to power electronics and their applications. The book examines the foundations of power electronics, power semiconductor devices, and power converters, before reviewing a constellation of modern applications. Comprehensively updated throughout, this new edition features new sections addressing current practices for renewable energy storage, transmission, integration, and operation, as well as smart-grid security, intelligent energy, artificial intelligence, and machine learning applications applied to power electronics, and autonomous and electric vehicles. This handbook is aimed at practitioners and researchers undertaking projects requiring specialist design, analysis, installation, commissioning, and maintenance services. Provides a fully comprehensive work addressing each aspect of power electronics in painstaking depth Delivers a methodical technical presentation in over 1500 pages Includes 50+ contributions prepared by leading experts Offers practical support and guidance with detailed examples and applications for lab and field experimentation Includes new technical sections on smart-grid security and intelligent energy, artificial intelligence, and machine learning applications applied to power electronics and autonomous and electric vehicles Features new chapter level templates and a narrative progression to facilitate understanding

Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Author : Gaudenzio Meneghesso
Publisher : Springer
ISBN 13 : 331977994X
Total Pages : 232 pages
Book Rating : 4.3/5 (197 download)

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Book Synopsis Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion by : Gaudenzio Meneghesso

Download or read book Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion written by Gaudenzio Meneghesso and published by Springer. This book was released on 2018-05-12 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.

GaN Transistors for Efficient Power Conversion

Author : Alex Lidow
Publisher : John Wiley & Sons
ISBN 13 : 1119594375
Total Pages : 384 pages
Book Rating : 4.1/5 (195 download)

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Book Synopsis GaN Transistors for Efficient Power Conversion by : Alex Lidow

Download or read book GaN Transistors for Efficient Power Conversion written by Alex Lidow and published by John Wiley & Sons. This book was released on 2019-08-23 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.

Wide Bandgap Semiconductors for Power Electronics

Author : Peter Wellmann
Publisher : John Wiley & Sons
ISBN 13 : 3527346716
Total Pages : 743 pages
Book Rating : 4.5/5 (273 download)

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Book Synopsis Wide Bandgap Semiconductors for Power Electronics by : Peter Wellmann

Download or read book Wide Bandgap Semiconductors for Power Electronics written by Peter Wellmann and published by John Wiley & Sons. This book was released on 2022-01-10 with total page 743 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide Bandgap Semiconductors for Power Electronic A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles. The book is filled with the most recent developments in the burgeoning field of wide bandgap semiconductor technology and includes information from cutting-edge semiconductor companies as well as material from leading universities and research institutions. By taking both scholarly and industrial perspectives, the book is designed to be a useful resource for scientists, academics, and corporate researchers and developers. This important book: Presents a review of wide bandgap materials and recent developments Links the high potential of wide bandgap semiconductors with the technological implementation capabilities Offers a unique combination of academic and industrial perspectives Meets the demand for a resource that addresses wide bandgap materials in a comprehensive manner Written for materials scientists, semiconductor physicists, electrical engineers, Wide Bandgap Semiconductors for Power Electronics provides a state of the art guide to the technology and application of SiC and related wide bandgap materials.

High Frequency MOSFET Gate Drivers

Author : ZhiLiang Zhang
Publisher :
ISBN 13 : 9781523112845
Total Pages : 337 pages
Book Rating : 4.1/5 (128 download)

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Book Synopsis High Frequency MOSFET Gate Drivers by : ZhiLiang Zhang

Download or read book High Frequency MOSFET Gate Drivers written by ZhiLiang Zhang and published by . This book was released on 2017 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Power GaN Devices

Author : Matteo Meneghini
Publisher : Springer
ISBN 13 : 3319431994
Total Pages : 380 pages
Book Rating : 4.3/5 (194 download)

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Book Synopsis Power GaN Devices by : Matteo Meneghini

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Lateral Power Transistors in Integrated Circuits

Author : Tobias Erlbacher
Publisher : Springer
ISBN 13 : 3319005006
Total Pages : 235 pages
Book Rating : 4.3/5 (19 download)

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Book Synopsis Lateral Power Transistors in Integrated Circuits by : Tobias Erlbacher

Download or read book Lateral Power Transistors in Integrated Circuits written by Tobias Erlbacher and published by Springer. This book was released on 2014-10-08 with total page 235 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book summarizes and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. In its first part, the book motivates the necessity for lateral power transistors by a top-down approach: First, it presents typical energy conversion applications in modern industrial, automotive and consumer electronics. Next, it introduces common circuit topologies suitable for these applications, and discusses the feasibility for monolithic integration. Finally, the combination of power and logic functionality on a single chip is motivated and the requirements and limitations for the power semiconductor devices are deduced. The second part describes the evolution of lateral power transistors over the past decades from the simple pin-type concept to double-acting RESURF topologies. It describes the principle of operation for these LDMOS devices and discusses limitations of lateral power devices. Moreover, figures-of-merit are presented which can be used to evaluate the performance of the novel lateral power transistors described in this book with respect to the LDMOS devices. In the last part, [..] the fundamental physical concepts including charge compensation and trench gate topologies are discussed. Also, the status of research in LDMOS devices on silicon carbide is presented. Advantages and drawbacks for each of these integration approaches are summarized, and the feasibility with respect to power electronic applications is evaluated.

Integrated High-Vin Multi-MHz Converters

Author : Jürgen Wittmann
Publisher : Springer Nature
ISBN 13 : 3030252574
Total Pages : 184 pages
Book Rating : 4.0/5 (32 download)

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Book Synopsis Integrated High-Vin Multi-MHz Converters by : Jürgen Wittmann

Download or read book Integrated High-Vin Multi-MHz Converters written by Jürgen Wittmann and published by Springer Nature. This book was released on 2019-09-03 with total page 184 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with guidelines for designing integrated multi-MHz-switching converters for input voltages/system supplies up to 50V or higher. Coverage includes converter theory, converter architectures, circuit design, efficiency, sizing of passives, technology aspects, etc. The author discusses new circuit designs, new architectures and new switching concepts, including dead-time control and soft-switching techniques that overcome current limitations of these converters. The discussion includes technology related issues and helps readers to choose the right technology for fast-switching converters. This book discusses benefits and drawbacks in terms of integration, size and cost, efficiency and complexity, and enables readers to make trade-offs in design, given different converter parameters. Describes a study for increasing switching frequencies up to 30 MHz at input voltages up to 50V or higher in the scaling of the size of switching converter passives; Analyzes various buck converter implementations and shows that a preference due to higher efficiency depends on the operating point, on the available switch technologies, and on the implementation of the high-side supply generation; Describes an efficiency model based on a four-phase model, which enables separation of loss causes and loss locations.

Design of Power Management Integrated Circuits

Author : Bernhard Wicht
Publisher : John Wiley & Sons
ISBN 13 : 1119123062
Total Pages : 484 pages
Book Rating : 4.1/5 (191 download)

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Book Synopsis Design of Power Management Integrated Circuits by : Bernhard Wicht

Download or read book Design of Power Management Integrated Circuits written by Bernhard Wicht and published by John Wiley & Sons. This book was released on 2024-07-22 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt: Comprehensive resource on power management ICs affording new levels of functionality and applications with cost reduction in various fields Design of Power Management Integrated Circuits is a comprehensive reference for power management IC design, covering the circuit design of main power management circuits like linear and switched-mode voltage regulators, along with sub-circuits such as power switches, gate drivers and their supply, level shifters, the error amplifier, current sensing, and control loop design. Circuits for protection and diagnostics, as well as aspects of the physical design like lateral and vertical power delivery, pin-out, floor planning, grounding/supply guidelines, and packaging, are also addressed. A full chapter is dedicated to the design of integrated passives. The text illustrates the application of power management integrated circuits (PMIC) to growth areas like computing, the internet of Things, mobility, and renewable energy. Includes numerous real-world examples, case studies, and exercises illustrating key design concepts and techniques. Offering a unique insight into this rapidly evolving technology through the author's experience developing PMICs in both the industrial and academic environment, Design of Power Management Integrated Circuits includes information on: Capacitive, inductive and hybrid DC-DC converters and their essential circuit blocks, covering error amplifiers, comparators, and ramp generators Sensing, protection, and diagnostics, covering thermal protection, inductive loads and clamping structures, under-voltage, reference and power-on reset generation Integrated MOS, MOM and MIM capacitors, integrated inductors Control loop design and PWM generation ensuring stability and fast transient response; subharmonic oscillations in current mode control (analysis and circuit design for slope compensation) DC behavior and DC-related circuit design, covering power efficiency, line and load regulation, error amplifier, dropout, and power transistor sizing Commonly used level shifters (including sizing rules) and cascaded (tapered) driver sizing and optimization guidelines Optimizing the physical design considering packaging, floor planning, EMI, pinout, PCB design and thermal design Design of Power Management Integrated Circuits is an essential resource on the subject for circuit designers/IC designers, system engineers, and application engineers, along with advanced undergraduate students and graduate students in related programs of study.

Wide Bandgap Semiconductor Power Devices

Author : B. Jayant Baliga
Publisher : Woodhead Publishing
ISBN 13 : 0081023073
Total Pages : 418 pages
Book Rating : 4.0/5 (81 download)

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Book Synopsis Wide Bandgap Semiconductor Power Devices by : B. Jayant Baliga

Download or read book Wide Bandgap Semiconductor Power Devices written by B. Jayant Baliga and published by Woodhead Publishing. This book was released on 2018-10-17 with total page 418 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact

GaN Transistors for Efficient Power Conversion

Author : Alex Lidow
Publisher : Efficient Power Publications
ISBN 13 : 0615569250
Total Pages : 221 pages
Book Rating : 4.6/5 (155 download)

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Book Synopsis GaN Transistors for Efficient Power Conversion by : Alex Lidow

Download or read book GaN Transistors for Efficient Power Conversion written by Alex Lidow and published by Efficient Power Publications. This book was released on 2012 with total page 221 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Integrated Electronics on Aluminum Nitride

Author : Reet Chaudhuri
Publisher : Springer Nature
ISBN 13 : 3031171993
Total Pages : 266 pages
Book Rating : 4.0/5 (311 download)

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Book Synopsis Integrated Electronics on Aluminum Nitride by : Reet Chaudhuri

Download or read book Integrated Electronics on Aluminum Nitride written by Reet Chaudhuri and published by Springer Nature. This book was released on 2022-12-06 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis outlines the principles, device physics, and technological applications of electronics based on the ultra-wide bandgap semiconductor aluminum nitride. It discusses the basic principles of electrostatics and transport properties of polarization-induced two-dimensional electron and hole channels in semiconductor heterostructures based on aluminum nitride. It explains the discovery of high-density two-dimensional hole gases in undoped heterojunctions, and shows how these high conductivity n- and p-type channels are used for high performance nFETs and pFETs, along with wide bandgap RF, mm-wave, and CMOS applications. The thesis goes on to discuss how the several material advantages of aluminum nitride, such as its high thermal conductivity and piezoelectric coefficient, enable not just high performance of transistors, but also monolithic integration of passive elements such as high frequency filters, enabling a new form factor for integrated RF electronics.

Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6

Author : Fred Roozeboom
Publisher : The Electrochemical Society
ISBN 13 : 1607687143
Total Pages : 356 pages
Book Rating : 4.6/5 (76 download)

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Book Synopsis Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 by : Fred Roozeboom

Download or read book Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 written by Fred Roozeboom and published by The Electrochemical Society. This book was released on with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt: