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Growth And Electronic Properties Of Gallium Arsenide And Germanium Metal Insulator Semiconductor Structures
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Book Synopsis Growth and Electronic Properties of Gallium Arsenide and Germanium Metal Insulator Semiconductor Structures by : John Charles Reed
Download or read book Growth and Electronic Properties of Gallium Arsenide and Germanium Metal Insulator Semiconductor Structures written by John Charles Reed and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The metal insulator semiconductor (MIS) structure is arguably the most technologically important type of solid in existence. The microelectronics revolution of the last thirty years is made possible largely due to the ability to realize extremely high quality metal/SiO$sb2$/Si metal oxide semiconductor (MOS) structures. Unfortunately, silicon does not stand out in its ability to pass charge carriers with the highest speed. Significant improvements in the performance of many areas of electronics would result if another, high mobility semiconductor could be implemented into a high quality MIS structure. In this thesis, MIS structures incorporating two high-mobility semiconductors, GaAs and Ge, are investigated. An in situ, plasma-enhanced chemical vapor deposition system has been constructed which allows deposition of Si-based insulators and group IV semiconductors on the pristine GaAs or Ge surface. For the GaAs MIS system, a thin Si/Ge interlayer between the insulator and GaAs surface is found to improve the insulator/GaAs interface. This has allowed the realization of high transconductance GaAs metal insulator semiconductor field effect transistors (MISFETs). For the Ge MIS system, the growth of Ge on GaAs at 250$spcirc$C while maintaining a low interface trap density at the insulator/Ge interface is shown to be possible. The high hole mobility of Ge and high electron mobility of GaAs suggest possible uses of this structure for high performance complementary metal insulator semiconductor (CMIS) applications.
Book Synopsis Growth and Electronic Properties of GaAs and Ge Metal Insulator Semiconductor Structures by : John Charles Reed
Download or read book Growth and Electronic Properties of GaAs and Ge Metal Insulator Semiconductor Structures written by John Charles Reed and published by . This book was released on 1994 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Properties of Gallium Arsenide written by and published by INSPEC. This book was released on 1986 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Surface Chemistry and Surface Electronic Properties of Gallium Arsenide and Gallium Nitride by : Jingxi Sun
Download or read book Surface Chemistry and Surface Electronic Properties of Gallium Arsenide and Gallium Nitride written by Jingxi Sun and published by . This book was released on 2000 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Gallium Arsenide written by M. J. Howes and published by . This book was released on 1985 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the seventh volume in the Wiley Series in Solid State Devices and Circuits, and deals comprehensively with the use of gallium arsenide for high frequency and high speed circuits.
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1991 with total page 1460 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Book Synopsis Growth, Characterization, and Applications of Gallium Arsenide and Germanium Layers Grown by Molecular Beam Epitaxy by : Richard Alan Stall
Download or read book Growth, Characterization, and Applications of Gallium Arsenide and Germanium Layers Grown by Molecular Beam Epitaxy written by Richard Alan Stall and published by . This book was released on 1980 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electronic Properties of the 110 surface of Gallium Arsenide and other III-V compounds by : Arie Huijser
Download or read book Electronic Properties of the 110 surface of Gallium Arsenide and other III-V compounds written by Arie Huijser and published by . This book was released on 1979 with total page 193 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :Bell Telephone Laboratories, inc. Libraries and Information Systems Center Publisher : ISBN 13 : Total Pages :626 pages Book Rating :4.3/5 (91 download)
Book Synopsis Bell Laboratories Talks and Papers by : Bell Telephone Laboratories, inc. Libraries and Information Systems Center
Download or read book Bell Laboratories Talks and Papers written by Bell Telephone Laboratories, inc. Libraries and Information Systems Center and published by . This book was released on 1983 with total page 626 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Gallium Arsenide Technology by : David K. Ferry
Download or read book Gallium Arsenide Technology written by David K. Ferry and published by Sams Technical Publishing. This book was released on 1985 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :United States. National Aeronautics and Space Administration. Scientific and Technical Information Branch Publisher : ISBN 13 : Total Pages :1080 pages Book Rating :4.E/5 ( download)
Book Synopsis Japanese Science and Technology, 1983-1984 by : United States. National Aeronautics and Space Administration. Scientific and Technical Information Branch
Download or read book Japanese Science and Technology, 1983-1984 written by United States. National Aeronautics and Space Administration. Scientific and Technical Information Branch and published by . This book was released on 1985 with total page 1080 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :Bell Telephone Laboratories, inc. Technical Information Libraries Publisher : ISBN 13 : Total Pages :558 pages Book Rating :4.:/5 (31 download)
Book Synopsis BTL Talks and Papers by : Bell Telephone Laboratories, inc. Technical Information Libraries
Download or read book BTL Talks and Papers written by Bell Telephone Laboratories, inc. Technical Information Libraries and published by . This book was released on 1981 with total page 558 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1973 with total page 1256 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2002 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Growth and Characterization of Gallium Arsenide Nanowire Structures by Metal Organic Chemical Vapor Deposition by : Nicholas G. Minutillo
Download or read book The Growth and Characterization of Gallium Arsenide Nanowire Structures by Metal Organic Chemical Vapor Deposition written by Nicholas G. Minutillo and published by . This book was released on 2014 with total page 141 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor nanowires hold a wealth of promise for studying the fundamental physics of electron behavior and interactions in a quasi-one dimensional environment and as components in or the foundation of technological advancement in electronic and spintronic devices. Especially in the case of spintronic applications, the crystalline environment must be highly controlled. Spintronic devices often depend on relative phases of spin states which are easily lost in an environment with high scattering probabilities. In any material system, control of the fabrication is the limiting factor to achieving the theoretical characteristics and operation. Bottom-up synthesis of semiconductor nanowires has yet to reach the level of control required for use as a base system in research. Material synthesis that meets the criteria for advanced applications remains a bottle neck in advancing the application of GaAs or any other semiconductor nanowires. We discuss the vapor-liquid-solid (VLS) mechanism and the growth of gallium arsenide and other III-V semiconductors. This mechanism has become a foundation of bottom-up nanowire growth, the physics of which remains the subject of ongoing research. We also discuss metal organic chemical vapor deposition (MOCVD), an epitaxial technique for III-V semiconductor thin films that is prominent in semiconductor nanowire growth.
Book Synopsis Electrical Properties of Gallium-Arsenide Fet Structures by : Fanling Hsu Yang
Download or read book Electrical Properties of Gallium-Arsenide Fet Structures written by Fanling Hsu Yang and published by . This book was released on 1984 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ceramic Abstracts by : American Ceramic Society
Download or read book Ceramic Abstracts written by American Ceramic Society and published by . This book was released on 1995 with total page 1150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
