Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
Download Fabrication Of Polysilicon Contacted Emitter Bipolar Transistors full books in PDF, epub, and Kindle. Read online Fabrication Of Polysilicon Contacted Emitter Bipolar Transistors ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Author : Gerold W. Neudeck
Publisher :
ISBN 13 :
Total Pages : 106 pages
Book Rating : 4.:/5 (12 download)
Download or read book Fabrication of Polysilicon Contacted Emitter Bipolar Transistors written by Gerold W. Neudeck and published by . This book was released on 1989 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Gerold W. Neudeck
Publisher :
ISBN 13 :
Total Pages : 119 pages
Book Rating : 4.:/5 (669 download)
Download or read book A Polysilicon Contacted Emitter Bipolar Transistors written by Gerold W. Neudeck and published by . This book was released on 1988 with total page 119 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Gregory William Bakker
Publisher :
ISBN 13 :
Total Pages : 122 pages
Book Rating : 4.:/5 (639 download)
Download or read book Fabrication and Analysis of Polysilicon Contacted Emitter Bipolar Transisters written by Gregory William Bakker and published by . This book was released on 1984 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Julie Kerstin Bratvold
Publisher :
ISBN 13 :
Total Pages : 104 pages
Book Rating : 4.:/5 (248 download)
Download or read book Design, Fabrication and Characterization of Bipolar Transistors with Polysilicon Emitters written by Julie Kerstin Bratvold and published by . This book was released on 1990 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Peter Ashburn
Publisher :
ISBN 13 :
Total Pages : 222 pages
Book Rating : 4.:/5 (51 download)
Download or read book Design and Realization of Bipolar Transistors written by Peter Ashburn and published by . This book was released on 1988-08-18 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses new developments in the design and fabrication of bipolar transistors for high-speed digital circuits. Covers advances in silicon technology (such as polysilicon emitters and self-aligned fabrication techniques), gallium arsenide technology (such as extremely high-performance MSI circuits resulting from the development of GaAs/GaAlAs heterojunctions), and new applications of bipolar transistors (such as optoelectronic circuits). Also deals with optimization of bipolar devices and processes for high-speed, digital circuits by means of a quasi-analytical expression for the gate delay of an ECL logic gate. Includes case studies.
Author : Ludwig Treitinger
Publisher : Springer Science & Business Media
ISBN 13 : 3642743609
Total Pages : 171 pages
Book Rating : 4.6/5 (427 download)
Download or read book Ultra-Fast Silicon Bipolar Technology written by Ludwig Treitinger and published by Springer Science & Business Media. This book was released on 2013-03-13 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the first bipolar transistor was investigated in 1947, enormous efforts have been devoted to semiconductor devices. The strong world wide competition in fabricating metal-oxide-semiconductor field-effect of develop transistor (MOSFET) memories has accelerated the pace ments in semiconductor technology. Bipolar transistors play a major role due to their high-speed performance. Delay times of about 20 ps per gate have already been achieved. Because of this rapid technologi cal progress, it is difficult to predict the future with any certainty. In 1987 a special session on ultrafast bipolar transistors was held at the European Solid-State Device Research Conference. Its aim was to sum marize the most recent developments and to discuss the future of bip olar transistors. This book is based on that session but also includes contributions by other participants, such that a broad range of up-to is presented. Several conclusions can be drawn from date information this information: the first and most important is the very large poten tial for future progress still existing in this field. This progress is char acterized by the drive towards higher speed and lower power con sumption required for complex single-chip systems, as well as by sev eral concrete technological implementations for fulfilling these dem is that a large part of this potential can be ands. The second conclusion realized by rather unsophisticated techniques and configurations well suited to uncomplicated transfer to fabrication.
Author : Susan Margaret Bradley
Publisher :
ISBN 13 :
Total Pages : 180 pages
Book Rating : 4.:/5 (258 download)
Download or read book The Numerical Simulation of Polysilicon-contacted Emitter Bipolar Transistors written by Susan Margaret Bradley and published by . This book was released on 1987 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Martha Johnson
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (144 download)
Download or read book Physics and modeling of polysilicon emitter contacts for bipolar transistors written by Martha Johnson and published by . This book was released on 1993 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Badih El-Kareh
Publisher : Springer Science & Business Media
ISBN 13 : 1461522099
Total Pages : 605 pages
Book Rating : 4.4/5 (615 download)
Download or read book Fundamentals of Semiconductor Processing Technology written by Badih El-Kareh and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 605 pages. Available in PDF, EPUB and Kindle. Book excerpt: The drive toward new semiconductor technologies is intricately related to market demands for cheaper, smaller, faster, and more reliable circuits with lower power consumption. The development of new processing tools and technologies is aimed at optimizing one or more of these requirements. This goal can, however, only be achieved by a concerted effort between scientists, engineers, technicians, and operators in research, development, and manufac turing. It is therefore important that experts in specific disciplines, such as device and circuit design, understand the principle, capabil ities, and limitations of tools and processing technologies. It is also important that those working on specific unit processes, such as lithography or hot processes, be familiar with other unit processes used to manufacture the product. Several excellent books have been published on the subject of process technologies. These texts, however, cover subjects in too much detail, or do not cover topics important to modem tech nologies. This book is written with the need for a "bridge" between different disciplines in mind. It is intended to present to engineers and scientists those parts of modem processing technologies that are of greatest importance to the design and manufacture of semi conductor circuits. The material is presented with sufficient detail to understand and analyze interactions between processing and other semiconductor disciplines, such as design of devices and cir cuits, their electrical parameters, reliability, and yield.
Author : K. Kapoor Ashon
Publisher :
ISBN 13 :
Total Pages : 263 pages
Book Rating : 4.:/5 (112 download)
Download or read book Polysilicon Emitter Bipolar Transistors written by K. Kapoor Ashon and published by . This book was released on 1983 with total page 263 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : J. J. Wortman
Publisher :
ISBN 13 :
Total Pages : 142 pages
Book Rating : 4.:/5 (227 download)
Download or read book High Frequency Silicon Bipolar Transistor with SIPOS (Semi-Insulating Polycrystalline Silicon) Heterojunction Emitter and Ion Implanted Rapid Thermal Annealed Base Region written by J. J. Wortman and published by . This book was released on 1985 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt: The research program described in this report is directed toward the investigation of concepts for improved high-frequency, high-speed, silicon bipolar transistors. The research is focused in three major areas: (1) deposition and characterization of semi-insulating polycrystalline silicon (SIPOS) as a heterojunction emitter. (2) use of ion implantation and rapid thermal annealing (RTA) for forming the base of bipolar transistors, (3) investigation of other technologies such as oxide isolation and polycrystalline silicon contacts to reduce parasitic effects to improve limitations at high frequencies. The research ranges from fundamental studies of structural, chemical, electrical, and optical properties of SIPOS deposited over a wide range of compositions on various substrates to the fabrication of transistors with polycrystalline and SIPOS emitters. Much effort has also been directed toward the ion implanted base where numerous techniques for forming the shallow implant and maintaining the profile during further processes were investigated.
Author : Peter Ashburn
Publisher : John Wiley & Sons
ISBN 13 : 0470090731
Total Pages : 286 pages
Book Rating : 4.4/5 (7 download)
Download or read book SiGe Heterojunction Bipolar Transistors written by Peter Ashburn and published by John Wiley & Sons. This book was released on 2004-02-06 with total page 286 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs is a hot topic within the microelectronics community because of its applications potential within integrated circuits operating at radio frequencies. Applications range from high speed optical networking to wireless communication devices. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. These transistors form the enabling devices in a wide range of products for wireless and wired communications. This book features: SiGe products include chip sets for wireless cellular handsets as well as WLAN and high-speed wired network applications Describes the physics and technology of SiGe HBTs, with coverage of Si and Ge bipolar transistors Written with the practising engineer in mind, this book explains the operating principles and applications of bipolar transistor technology. Essential reading for practising microelectronics engineers and researchers. Also, optical communications engineers and communication technology engineers. An ideal reference tool for masters level students in microelectronics and electronics engineering.
Author : Gary L. Patton
Publisher :
ISBN 13 :
Total Pages : 151 pages
Book Rating : 4.:/5 (386 download)
Download or read book Physics, Technology, and Modeling of Polysilicon Emitter Contacts for VLSI Bipolar Transistors written by Gary L. Patton and published by . This book was released on 1986 with total page 151 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Ted Kamins
Publisher : Springer Science & Business Media
ISBN 13 : 1461555779
Total Pages : 391 pages
Book Rating : 4.4/5 (615 download)
Download or read book Polycrystalline Silicon for Integrated Circuits and Displays written by Ted Kamins and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 391 pages. Available in PDF, EPUB and Kindle. Book excerpt: Polycrystalline Silicon for Integrated Circuits and Displays, Second Edition presents much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon. By properly understanding the properties of polycrystalline silicon and their relation to the deposition conditions, polysilicon can be designed to ensure optimum device and integrated-circuit performance. Polycrystalline silicon has played an important role in integrated-circuit technology for two decades. It was first used in self-aligned, silicon-gate, MOS ICs to reduce capacitance and improve circuit speed. In addition to this dominant use, polysilicon is now also included in virtually all modern bipolar ICs, where it improves the basic physics of device operation. The compatibility of polycrystalline silicon with subsequent high-temperature processing allows its efficient integration into advanced IC processes. This compatibility also permits polysilicon to be used early in the fabrication process for trench isolation and dynamic random-access-memory (DRAM) storage capacitors. In addition to its integrated-circuit applications, polysilicon is becoming vital as the active layer in the channel of thin-film transistors in place of amorphous silicon. When polysilicon thin-film transistors are used in advanced active-matrix displays, the peripheral circuitry can be integrated into the same substrate as the pixel transistors. Recently, polysilicon has been used in the emerging field of microelectromechanical systems (MEMS), especially for microsensors and microactuators. In these devices, the mechanical properties, especially the stress in the polysilicon film, are critical to successful device fabrication. Polycrystalline Silicon for Integrated Circuits and Displays, Second Edition is an invaluable reference for professionals and technicians working with polycrystalline silicon in the integrated circuit and display industries.
Author : Kathleen Susan Krisch
Publisher :
ISBN 13 :
Total Pages : 246 pages
Book Rating : 4.:/5 (184 download)
Download or read book Design and Characterization of Polysilicon Emitter Bipolar Transistors written by Kathleen Susan Krisch and published by . This book was released on 1988 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Michael Reisch
Publisher : Springer Science & Business Media
ISBN 13 : 364255900X
Total Pages : 671 pages
Book Rating : 4.6/5 (425 download)
Download or read book High-Frequency Bipolar Transistors written by Michael Reisch and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 671 pages. Available in PDF, EPUB and Kindle. Book excerpt: This modern book-length treatment gives a detailed presentation of high-frequency bipolar transistors in silicon or silicon-germanium technology, with particular emphasis placed on today's advanced compact models and their physical foundations.
Author : C. Lea Williams
Publisher :
ISBN 13 :
Total Pages : 86 pages
Book Rating : 4.:/5 (183 download)
Download or read book Optimization and Temperature Dependence of Current Gain in Polysilicon-emitter-contacted Bipolar Transistors written by C. Lea Williams and published by . This book was released on 1988 with total page 86 pages. Available in PDF, EPUB and Kindle. Book excerpt:
