Fabrication and Characterization of Thin-film Transistor Materials and Devices

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ISBN 13 :
Total Pages : 266 pages
Book Rating : 4.:/5 (272 download)

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Book Synopsis Fabrication and Characterization of Thin-film Transistor Materials and Devices by : David Hong

Download or read book Fabrication and Characterization of Thin-film Transistor Materials and Devices written by David Hong and published by . This book was released on 2009 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: A class of inorganic thin-film transistor (TFT) semiconductor materials has emerged involving oxides composed of post-transitional cations with (n-1)d10ns° (n[greater than or equal to]4) electronic configurations. This thesis is devoted to the pursuit of topics involving the development of these materials for TFT applications: Deposition of zinc oxide and zinc tin oxide semiconductor layers via reactive sputtering from a metal target, and the characterization of indium gallium zinc oxide (IGZO)-based TFTs utilizing various insulator materials as the gate dielectric. The first topic involves the deposition of oxide semiconductor layers via reactive sputtering from a metal target. Two oxide semiconductors are utilized for fabricating TFTs via reactive sputtering from a metal target: zinc oxide and zinc tin oxide. With optimized processing parameters, zinc oxide and zinc tin oxide via this deposition method exhibit similar characteristics to TFTs fabricated via sputtering from a ceramic target. Additionally the effects of gate capacitance density and gate dielectric material are explored utilizing TFTs with IGZO as the semiconductor layers. IGZO-based TFTs exhibit ideal behavior with improved TFT performance such as higher current drive at a given overvoltage, a decrease in the subthreshold swing, and a decrease in the magnitude of the turn-on voltage. Additionally it is shown that silicon dioxide is the preferred dielectric material, with silicon nitride a poor choice for oxide-based TFTs. Finally a simple method to characterize the band tail state distribution near the conduction band minimum of a semiconductor by analyzing two-terminal current-voltage characteristics of a TFT with a floating gate is presented. The characteristics trap energy (E[subscript T]) as a function of post-deposition annealing temperature is shown to correlate very well with IGZO TFT performance, with a lower value of E[subscript T], corresponding to a more abrupt distribution of band tail states, correlating with improved TFT mobility. It is shown that as the post-deposition anneal temperature increases, the total number of band tail states does not change significantly, however the energy distribution of these states approaches that of a crystalline material.

Organic Field Effect Transistors

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Publisher : Springer Science & Business Media
ISBN 13 : 0387921346
Total Pages : 156 pages
Book Rating : 4.3/5 (879 download)

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Book Synopsis Organic Field Effect Transistors by : Ioannis Kymissis

Download or read book Organic Field Effect Transistors written by Ioannis Kymissis and published by Springer Science & Business Media. This book was released on 2008-12-25 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: Organic Field Effect Transistors presents the state of the art in organic field effect transistors (OFETs), with a particular focus on the materials and techniques useful for making integrated circuits. The monograph begins with some general background on organic semiconductors, discusses the types of organic semiconductor materials suitable for making field effect transistors, the fabrication processes used to make integrated Circuits, and appropriate methods for measurement and modeling. Organic Field Effect Transistors is written as a basic introduction to the subject for practitioners. It will also be of interest to researchers looking for references and techniques that are not part of their subject area or routine. A synthetic organic chemist, for example, who is interested in making OFETs may use the book more as a device design and characterization reference. A thin film processing electrical engineer, on the other hand, may be interested in the book to learn about what types of electron carrying organic semiconductors may be worth trying and learning more about organic semiconductor physics.

Fabrication and Characterization of Compound Thin-film Transistors

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ISBN 13 :
Total Pages : 146 pages
Book Rating : 4.:/5 (859 download)

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Book Synopsis Fabrication and Characterization of Compound Thin-film Transistors by : Rongsheng Chen

Download or read book Fabrication and Characterization of Compound Thin-film Transistors written by Rongsheng Chen and published by . This book was released on 2013 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Short-Channel Organic Thin-Film Transistors

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Publisher : Springer
ISBN 13 : 3319188968
Total Pages : 232 pages
Book Rating : 4.3/5 (191 download)

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Book Synopsis Short-Channel Organic Thin-Film Transistors by : Tarek Zaki

Download or read book Short-Channel Organic Thin-Film Transistors written by Tarek Zaki and published by Springer. This book was released on 2015-05-27 with total page 232 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work takes advantage of high-resolution silicon stencil masks to build air-stable complementary OTFTs using a low-temperature fabrication process. Plastic electronics based on organic thin-film transistors (OTFTs) pave the way for cheap, flexible and large-area products. Over the past few years, OTFTs have undergone remarkable advances in terms of reliability, performance and scale of integration. Many factors contribute to the allure of this technology; the masks exhibit excellent stiffness and stability, thus allowing OTFTs with submicrometer channel lengths and superb device uniformity to be patterned. Furthermore, the OTFTs employ an ultra-thin gate dielectric that provides a sufficiently high capacitance to enable the transistors to operate at voltages as low as 3 V. The critical challenges in this development are the subtle mechanisms that govern the properties of aggressively scaled OTFTs. These mechanisms, dictated by device physics, are well described and implemented into circuit-design tools to ensure adequate simulation accuracy.

Organic Thin Film Transistor Integration

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Publisher : John Wiley & Sons
ISBN 13 : 3527634452
Total Pages : 258 pages
Book Rating : 4.5/5 (276 download)

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Book Synopsis Organic Thin Film Transistor Integration by : Flora Li

Download or read book Organic Thin Film Transistor Integration written by Flora Li and published by John Wiley & Sons. This book was released on 2011-03-21 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research on organic electronics (or plastic electronics) is driven by the need to create systems that are lightweight, unbreakable, and mechanically flexible. With the remarkable improvement in the performance of organic semiconductor materials during the past few decades, organic electronics appeal to innovative, practical, and broad-impact applications requiring large-area coverage, mechanical flexibility, low-temperature processing, and low cost. Thus, organic electronics appeal to a broad range of electronic devices and products including transistors, diodes, sensors, solar cells, lighting, displays, and electronic identification and tracking devices A number of commercial opportunities have been identified for organic thin film transistors (OTFTs), ranging from flexible displays, electronic paper, radio-frequency identification (RFID) tags, smart cards, to low-cost disposable electronic products, and more are continually being invented as the technology matures. The potential applications for "plastic electronics" are huge but several technological hurdles must be overcome. In many of these applications, transistor serves as a fundamental building block to implement the necessary electronic functionality. Hence, research in organic thin film transistors (OTFTs) or organic field effect transistors (OFETs) is eminently pertinent to the development and realization of organic electronics. This book presents a comprehensive investigation of the production and application of a variety of polymer based transistor devices and circuits. It begins with a detailed overview of Organic Thin Film Transistors (OTFTs) and discusses the various possible fabrication methods reported so far. This is followed by two major sections on the choice, optimization and implementation of the gate dielectric material to be used. Details of the effects of processing on the efficiency of the contacts are then provided. The book concludes with a chapter on the integration of such devices to produce a variety of OTFT based circuits and systems. The key objective is to examine strategies to exploit existing materials and techniques to advance OTFT technology in device performance, device manufacture, and device integration. Finally, the collective knowledge from these investigations facilitates the integration of OTFTs into organic circuits, which is expected to contribute to the development of new generation of all-organic displays for communication devices and other pertinent applications. Overall, a major outcome of this work is that it provides an economical means for organic transistor and circuit integration, by enabling the use of a well-established PECVD infrastructure, while not compromising the performance of electronics. The techniques established here are not limited to use in OTFTs only; the organic semiconductor and SiNx combination can be used in other device structures (e.g., sensors, diodes, photovoltaics). Furthermore, the approach and strategy used for interface optimization can be extended to the development of other materials systems.

Fabrication and Characterization of Solution Processed Organic Thin Film Transistors

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ISBN 13 :
Total Pages : 78 pages
Book Rating : 4.:/5 (946 download)

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Book Synopsis Fabrication and Characterization of Solution Processed Organic Thin Film Transistors by : Yin Sun

Download or read book Fabrication and Characterization of Solution Processed Organic Thin Film Transistors written by Yin Sun and published by . This book was released on 2015 with total page 78 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Characterization of Materials and Fabrication of Active Matrix Thin Film Transistor Arrays for Electrical Interfacing of Biological Materials

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ISBN 13 :
Total Pages : 245 pages
Book Rating : 4.:/5 (463 download)

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Book Synopsis Characterization of Materials and Fabrication of Active Matrix Thin Film Transistor Arrays for Electrical Interfacing of Biological Materials by :

Download or read book Characterization of Materials and Fabrication of Active Matrix Thin Film Transistor Arrays for Electrical Interfacing of Biological Materials written by and published by . This book was released on 2009 with total page 245 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electrical interfacing between semiconductor devices and biological materials has been studied for live cell probing which will make it possible to perform direct electrical sensing of cells. To extend the applicability of extracellular and planar microelectrode arrays, recently vertically aligned nanofibers (VACNFs) have been integrated with micro electrode arrays (MEA) for applications such as cell membrane mimics, gene delivery arrays, neuroelectrochemical interfacing arrays, superhydrophobic switches, and intracellular probes. The main drawback of VACNF-MEA devices are the low density of electrodes and passive addressing approach. In order to increase the number of elements of an MEA and enable both stimulation and recording on the same platform, an actively addressed thin film transistor (TFT) array platform was developed. Active matrix-TFTs are highly functional devices which have been used widely as backplanes in display electronics field over the past few decades. VACNFs were integrated onto the TFT array (TFT-VACNF) as they enhance the electrical sensitivity to the cell relative to standard planar arrays; furthermore, the vertical electrodes provide the potential for intracellular sensing within individual cells. This device platform provides great potential as an advanced microelectrode array for direct cell sensing, probing, and recording with a high electrode density and active addressability. In this study, VACNFs were successfully integrated onto TFT devices to demonstrate a new microelectrode array platform. The materials and processes of the TFT structure were designed to be compatible with the requisite high-temperature (~700°C) and direct current Plasma Enhanced Chemical Vapor Deposition (dc-PECVD) VACNF growth process. To extend the applicability of utilizing these vertical electrodes, this dissertation describes: the characterization and optimization of each layer for the TFT; the fabrication process and issues for active matrix TFT array; the critical device integration issues of VACNFs onto active matrix TFT arrays are elaborated; and the initial and final device characteristics are reported.

Fabrication and Analysis of Bottom Gate Nanocrystalline Silicon Thin Film Transistors

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ISBN 13 : 9780494438121
Total Pages : 71 pages
Book Rating : 4.4/5 (381 download)

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Book Synopsis Fabrication and Analysis of Bottom Gate Nanocrystalline Silicon Thin Film Transistors by : Kyung-Wook Shin

Download or read book Fabrication and Analysis of Bottom Gate Nanocrystalline Silicon Thin Film Transistors written by Kyung-Wook Shin and published by . This book was released on 2008 with total page 71 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thin film transistors (TFTs) have brought prominent growth in both variety and utility of large area electronics market over the past few decades. Nanocrystalline silicon (nc-Si:H) TFTs have attracted attention recently, due to high-performance and low-cost, as an alternative of amorphous silicon (a-Si:H) and polycrystalline silicon (poly-Si) TFTs. The nc-Si:H TFTs has higher carrier mobility and better device stability than a-Si:H TFTs while lower manufacturing cost than poly-Si TFTs. However, current nc-Si:TFTs have several challenging issues on materials and devices, on which this thesis focuses. In the material study, the gate quality silicon nitride (a-SiNx) films and doped nc-Si:H contacts based on conventional plasma enhanced chemical vapor deposition (PECVD) are investigated. The feasibility of a-SiNx on TFT application is discussed with current-voltage (I-V)/capacitance-voltage(C-V) measurement and Fourier Transform Infrared Spectroscopy (FTIR) results which demonstrate 4.3 MV/cm, relative permittivity of 6.15 and nitrogen rich composition. The doped nc-Si:H for contact layer of TFTs is characterized with Raman Spectroscopy and I-V measurements to reveal 56 % of crystalinity and 0.42 S/cm of dark conductivity. Inverted staggered TFT structure is fabricated for nc-Si:H TFT device research using fully wet etch fabrication process which requires five lithography steps. The process steps are described in detail as well as adaptation of the fabrication process to a backplane fabrication for direct conversion X-ray imagers. The modification of TFT process for backplane fabrication involves two more lithography steps for mushroom electrode formation while other pixel components is incorporated into the five lithography step TFT process. The TFTs are electrically characterized demonstrating 7.22 V of threshold voltage, 0.63 S/decade of subthreshold slope, 0.07 cm2/V-s of field effect mobility, and 106 of on/off ratio. The transfer characteristics of TFTs reveal a severe effect of parasitic resistance which is induced from channel layer itself, a contact between channel layer and doped nc-Si:H contact layer, the resistance of doped nc-Si:H contact layer, and a contact between the doped nc-Si:H layer and source/drain metal electrodes. The parasitic resistance effect is investigated using numerical simulation method by various parasitic resistances, channel length of the TFT, and intrinsic properties of nc-Si:H channel layer. It reveals the parasitic resistance effect become severe when the channel is short and has better quality, therefore, several further research topics on improving contact nc-Si:H quality and process adjustment are required.

Fabrication and Characterization of Oxide-based Thin Film Transistors, and Process Development for Oxide Heterostructures

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (665 download)

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Book Synopsis Fabrication and Characterization of Oxide-based Thin Film Transistors, and Process Development for Oxide Heterostructures by : Wantae Lim

Download or read book Fabrication and Characterization of Oxide-based Thin Film Transistors, and Process Development for Oxide Heterostructures written by Wantae Lim and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: This dissertation is focused on the development of thin film transistors (TFTs) using oxide materials composed of post-transitional cations with (n-1)d10ns0 (n[more than or equal to]4). The goal is to achieve high performance oxide-based TFTs fabricated at low processing temperature on either glass or flexible substrates for next generation display applications. In addition, etching mechanism and Ohmic contact formation for oxide heterostructure (ZnO/CuCrO2) system is demonstrated. The deposition and characterization of oxide semiconductors (In2O3-Zn0, and InGaZnO4) using a RF-magnetron sputtering system are studied. The main influence on the resistivity of the films is found to be the oxygen partial pressure in the sputtering ambient. The films remained amorphous and transparent (> 70%) at all process conditions. These films showed good transmittance at suitable conductivity for transistor fabrication. The electrical characteristics of both top- and bottom-gate type Indium Zinc Oxide (InZnO) and Indium Gallium Zinc Oxide (InGaZnO4)-based TFTs are reported. The InZnO films were favorable for depletion-mode TFTs due to their tendency to form oxygen vacancies, while enhancement-mode devices were realized with InGaZnO4 films. The InGaZnO4-based TFTs fabricated on either glass or plastic substrates at low temperature (

Introduction to Thin Film Transistors

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Publisher : Springer Science & Business Media
ISBN 13 : 3319000020
Total Pages : 467 pages
Book Rating : 4.3/5 (19 download)

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Book Synopsis Introduction to Thin Film Transistors by : S.D. Brotherton

Download or read book Introduction to Thin Film Transistors written by S.D. Brotherton and published by Springer Science & Business Media. This book was released on 2013-04-16 with total page 467 pages. Available in PDF, EPUB and Kindle. Book excerpt: Introduction to Thin Film Transistors reviews the operation, application and technology of the main classes of thin film transistor (TFT) of current interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si:H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors. The large scale manufacturing of a-Si:H TFTs forms the basis of the active matrix flat panel display industry. Poly-Si TFTs facilitate the integration of electronic circuits into portable active matrix liquid crystal displays, and are increasingly used in active matrix organic light emitting diode (AMOLED) displays for smart phones. The recently developed AOS TFTs are seen as an alternative option to poly-Si and a-Si:H for AMOLED TV and large AMLCD TV applications, respectively. The organic TFTs are regarded as a cost effective route into flexible electronics. As well as treating the highly divergent preparation and properties of these materials, the physics of the devices fabricated from them is also covered, with emphasis on performance features such as carrier mobility limitations, leakage currents and instability mechanisms. The thin film transistors implemented with these materials are the conventional, insulated gate field effect transistors, and a further chapter describes a new thin film transistor structure: the source gated transistor, SGT. The driving force behind much of the development of TFTs has been their application to AMLCDs, and there is a chapter dealing with the operation of these displays, as well as of AMOLED and electrophoretic displays. A discussion of TFT and pixel layout issues is also included. For students and new-comers to the field, introductory chapters deal with basic semiconductor surface physics, and with classical MOSFET operation. These topics are handled analytically, so that the underlying device physics is clearly revealed. These treatments are then used as a reference point, from which the impact of additional band-gap states on TFT behaviour can be readily appreciated. This reference book, covering all the major TFT technologies, will be of interest to a wide range of scientists and engineers in the large area electronics industry. It will also be a broad introduction for research students and other scientists entering the field, as well as providing an accessible and comprehensive overview for undergraduate and postgraduate teaching programmes.

Fabrication and Characterization of Small-grain Silicon-based Thin-film Transistors

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Publisher :
ISBN 13 :
Total Pages : 186 pages
Book Rating : 4.:/5 (982 download)

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Book Synopsis Fabrication and Characterization of Small-grain Silicon-based Thin-film Transistors by : Meng Zhang

Download or read book Fabrication and Characterization of Small-grain Silicon-based Thin-film Transistors written by Meng Zhang and published by . This book was released on 2016 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Handbook of Thin Films, Five-Volume Set

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Publisher : Academic Press
ISBN 13 : 0125129084
Total Pages : 661 pages
Book Rating : 4.1/5 (251 download)

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Book Synopsis Handbook of Thin Films, Five-Volume Set by : Hari Singh Nalwa

Download or read book Handbook of Thin Films, Five-Volume Set written by Hari Singh Nalwa and published by Academic Press. This book was released on 2001-10-29 with total page 661 pages. Available in PDF, EPUB and Kindle. Book excerpt: This five-volume handbook focuses on processing techniques, characterization methods, and physical properties of thin films (thin layers of insulating, conducting, or semiconductor material). The editor has composed five separate, thematic volumes on thin films of metals, semimetals, glasses, ceramics, alloys, organics, diamonds, graphites, porous materials, noncrystalline solids, supramolecules, polymers, copolymers, biopolymers, composites, blends, activated carbons, intermetallics, chalcogenides, dyes, pigments, nanostructured materials, biomaterials, inorganic/polymer composites, organoceramics, metallocenes, disordered systems, liquid crystals, quasicrystals, and layered structures. Thin films is a field of the utmost importance in today's materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, digital camcorders, sensitive broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are but a few examples of miniaturized device technologies that depend the utilization of thin film materials. The Handbook of Thin Films Materials is a comprehensive reference focusing on processing techniques, characterization methods, and physical properties of these thin film materials.

GaN-based Materials and Devices

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Publisher : World Scientific
ISBN 13 : 9789812562364
Total Pages : 310 pages
Book Rating : 4.5/5 (623 download)

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Book Synopsis GaN-based Materials and Devices by : Michael Shur

Download or read book GaN-based Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2004 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.

Fabrication and Characterization of Thin-film Transistors with Organic Heterostructure of Pentacene and PTCDI-C13

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (84 download)

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Book Synopsis Fabrication and Characterization of Thin-film Transistors with Organic Heterostructure of Pentacene and PTCDI-C13 by : Jérôme Tilman

Download or read book Fabrication and Characterization of Thin-film Transistors with Organic Heterostructure of Pentacene and PTCDI-C13 written by Jérôme Tilman and published by . This book was released on 2010 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Water-stable Organic Transistor Sensors

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ISBN 13 :
Total Pages : 228 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Water-stable Organic Transistor Sensors by : Mark Edward Roberts

Download or read book Water-stable Organic Transistor Sensors written by Mark Edward Roberts and published by . This book was released on 2008 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Thin film transistors. 1. Amorphous silicon thin film transistors

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Publisher : Springer Science & Business Media
ISBN 13 : 9781402075056
Total Pages : 538 pages
Book Rating : 4.0/5 (75 download)

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Book Synopsis Thin film transistors. 1. Amorphous silicon thin film transistors by : Yue Kuo

Download or read book Thin film transistors. 1. Amorphous silicon thin film transistors written by Yue Kuo and published by Springer Science & Business Media. This book was released on 2004 with total page 538 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first reference on amorphous silicon and polycrystalline silicon thin film transistors that gives a systematic global review of all major topics in the field. These volumes include sections on basic materials and substrates properties, fundamental device physics, critical fabrication processes (structures, a-Si: H, dielectric, metallization, catalytic CVD), and existing and new applications. The chapters are written by leading researchers who have extensive experience with reputed track records. Thin Film Transistors provides practical information on preparing individual functional a-Si: H TFTs and poly-Si TFTs as well as large-area TFT arrays. Also covered are basic theories on the a-Si: H TFT operations and unique material characteristics. Readers are also exposed to a wide range of existing and new applications in industries.

Thin-Film Transistors

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Publisher : CRC Press
ISBN 13 : 0824747542
Total Pages : 486 pages
Book Rating : 4.8/5 (247 download)

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Book Synopsis Thin-Film Transistors by : Cherie R. Kagan

Download or read book Thin-Film Transistors written by Cherie R. Kagan and published by CRC Press. This book was released on 2003-02-25 with total page 486 pages. Available in PDF, EPUB and Kindle. Book excerpt: A single-source treatment of developments in TFT production from international specialists. It interweaves overlapping areas in multiple disciplines pertinent to transistor fabrication and explores the killer application of amorphous silicon transistors in active matrix liquid crystal displays.