Extended Defects In Germanium

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Extended Defects in Germanium

Author : Cor Claeys
Publisher : Springer Science & Business Media
ISBN 13 : 3540856145
Total Pages : 317 pages
Book Rating : 4.5/5 (48 download)

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Book Synopsis Extended Defects in Germanium by : Cor Claeys

Download or read book Extended Defects in Germanium written by Cor Claeys and published by Springer Science & Business Media. This book was released on 2008-12-29 with total page 317 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim is to give an overview of the physics of extended defects in Germanium, i.e. dislocations (line defects), grain boundaries, stacking faults, twins and {311} defects (two-dimensional defects) and precipitates, bubbles, etc. The first part covers fundamentals, describing the crystallographic structure and other physical and electrical properties, mainly of dislocations. Since dislocations are essential for the plastic deformation of Germanium, methods for analysis and imaging of dislocations and to evaluate their structure are described. Attention is given to the electrical and optical properties, which are important for devices made in dislocated Ge. The second part treats the creation of extended defects during wafer and device processing. Issues are addressed such as defect formation during ion implantation, necessary to create junctions, which are an essential part in every device type. Extended defects are also created during the deposition of thin or thick epitaxial layers on other substrates, which are important for optoelectronic and photovoltaic applications. In brief, the book is intended to provide a fundamental understanding of the extended-defect formation during Ge materials and device processing, providing ways to distinguish harmful from less detrimental defects and should point out ways for defect engineering and control.

Silicon, Germanium, and Their Alloys

Author : Gudrun Kissinger
Publisher : CRC Press
ISBN 13 : 1466586648
Total Pages : 436 pages
Book Rating : 4.4/5 (665 download)

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Book Synopsis Silicon, Germanium, and Their Alloys by : Gudrun Kissinger

Download or read book Silicon, Germanium, and Their Alloys written by Gudrun Kissinger and published by CRC Press. This book was released on 2014-12-09 with total page 436 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon–germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium nanocrystals. World-recognized experts are the authors of the book’s chapters, which span bulk, thin film, and nanostructured materials growth and characterization problems, theoretical modeling, crystal defects, diffusion, and issues of key applicative value, including chemical etching as a defect delineation technique, the spectroscopic analysis of impurities, and the use of devices as tools for the measurement of materials quality.

Extended Defects in Semiconductors

Author : D. B. Holt
Publisher : Cambridge University Press
ISBN 13 : 1139463594
Total Pages : 625 pages
Book Rating : 4.1/5 (394 download)

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Book Synopsis Extended Defects in Semiconductors by : D. B. Holt

Download or read book Extended Defects in Semiconductors written by D. B. Holt and published by Cambridge University Press. This book was released on 2007-04-12 with total page 625 pages. Available in PDF, EPUB and Kindle. Book excerpt: A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.

Silicon, Germanium, and Their Alloys

Author : Gudrun Kissinger
Publisher : CRC Press
ISBN 13 : 1466586656
Total Pages : 431 pages
Book Rating : 4.4/5 (665 download)

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Book Synopsis Silicon, Germanium, and Their Alloys by : Gudrun Kissinger

Download or read book Silicon, Germanium, and Their Alloys written by Gudrun Kissinger and published by CRC Press. This book was released on 2014-12-09 with total page 431 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon–germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium nanocrystals. World-recognized experts are the authors of the book’s chapters, which span bulk, thin film, and nanostructured materials growth and characterization problems, theoretical modeling, crystal defects, diffusion, and issues of key applicative value, including chemical etching as a defect delineation technique, the spectroscopic analysis of impurities, and the use of devices as tools for the measurement of materials quality.

Point Defects in Solids

Author : James H. Crawford
Publisher : Springer Science & Business Media
ISBN 13 : 1468409042
Total Pages : 494 pages
Book Rating : 4.4/5 (684 download)

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Book Synopsis Point Defects in Solids by : James H. Crawford

Download or read book Point Defects in Solids written by James H. Crawford and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 494 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume 1 of Point Defects in Solids has as its major emphasis defects in ionic solids. Volume 2 now extends this emphasis to semiconductors. The first four chapters treat in some detail the creation, kinetic behavior, inter actions, and physical properties of both simple and composite defects in a variety of semiconducting systems. Also included, as in Vol. 1, are chapters on special topics, namely phonon-defect interactions and defects in organic crystals. Defect behavior in semiconductors has been a subject of considerable interest since the discovery some twenty-five years ago that fast neutron irradiation profoundly affected the electrical characteristics of germanium and silicon. Present-day interest has been stimulated by such semiconductor applications as solar cell power plants for space stations and satellites and semiconductor particle and y-ray detectors, since in both radiation damage can cause serious deterioration. Of even greater practical concern is the need to understand particle damage in order to capitalize upon the develop ing technique of ion implantation as a means of device fabrication. Although the periodic international conferences on radiation effects in semiconductors have served the valuable function of summarizing the extensive work being done in this field, these proceedings are much too detailed and lack the background discussion needed to make them useful to the novice.

Proceedings of the Second Symposium on Defects in Silicon

Author : W. Murray Bullis
Publisher :
ISBN 13 :
Total Pages : 716 pages
Book Rating : 4.:/5 (44 download)

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Book Synopsis Proceedings of the Second Symposium on Defects in Silicon by : W. Murray Bullis

Download or read book Proceedings of the Second Symposium on Defects in Silicon written by W. Murray Bullis and published by . This book was released on 1991 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Defects in Semiconductors

Author :
Publisher : Academic Press
ISBN 13 : 0128019409
Total Pages : 458 pages
Book Rating : 4.1/5 (28 download)

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Book Synopsis Defects in Semiconductors by :

Download or read book Defects in Semiconductors written by and published by Academic Press. This book was released on 2015-06-08 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. Expert contributors Reviews of the most important recent literature Clear illustrations A broad view, including examination of defects in different semiconductors

Metal Impurities in Silicon- and Germanium-Based Technologies

Author : Cor Claeys
Publisher : Springer
ISBN 13 : 3319939254
Total Pages : 438 pages
Book Rating : 4.3/5 (199 download)

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Book Synopsis Metal Impurities in Silicon- and Germanium-Based Technologies by : Cor Claeys

Download or read book Metal Impurities in Silicon- and Germanium-Based Technologies written by Cor Claeys and published by Springer. This book was released on 2018-08-13 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices’ performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.

Silicon-Germanium (SiGe) Nanostructures

Author : Y. Shiraki
Publisher : Elsevier
ISBN 13 : 0857091425
Total Pages : 656 pages
Book Rating : 4.8/5 (57 download)

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Book Synopsis Silicon-Germanium (SiGe) Nanostructures by : Y. Shiraki

Download or read book Silicon-Germanium (SiGe) Nanostructures written by Y. Shiraki and published by Elsevier. This book was released on 2011-02-26 with total page 656 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices. The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices. With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures. Reviews the materials science of nanostructures and their properties and applications in different electronic devices Assesses the structural properties of SiGe nanostructures, discussing electronic band structures of SiGe alloys Explores the formation of SiGe nanostructuresfeaturing different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition

Germanium-Based Technologies

Author : Cor Claeys
Publisher : Elsevier
ISBN 13 : 9780080474908
Total Pages : 480 pages
Book Rating : 4.4/5 (749 download)

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Book Synopsis Germanium-Based Technologies by : Cor Claeys

Download or read book Germanium-Based Technologies written by Cor Claeys and published by Elsevier. This book was released on 2011-07-28 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt: Germanium is a semiconductor material that formed the basis for the development of transistor technology. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron (sub 45 nm) technologies. Germanium-Based technologies: From Materials to Devices is the first book to provide a broad, in-depth coverage of the field, including recent advances in Ge-technology and the fundamentals in material science, device physics and semiconductor processing. The contributing authors are international experts with a world-wide recognition and involved in the leading research in the field. The book also covers applications and the use of Ge for optoelectronics, detectors and solar cells. An ideal reference work for students and scientists working in the field of physics of semiconductor devices and materials, as well as for engineers in research centres and industry. Both the newcomer and the expert should benefit from this unique book. State-of-the-art information available for the first time as an all-in-source Extensive reference list making it an indispensable reference book Broad coverage from fundamental aspects up to industrial applications

High Mobility Materials for CMOS Applications

Author : Nadine Collaert
Publisher : Woodhead Publishing
ISBN 13 : 0081020627
Total Pages : 384 pages
Book Rating : 4.0/5 (81 download)

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Book Synopsis High Mobility Materials for CMOS Applications by : Nadine Collaert

Download or read book High Mobility Materials for CMOS Applications written by Nadine Collaert and published by Woodhead Publishing. This book was released on 2018-06-29 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt: High Mobility Materials for CMOS Applications provides a comprehensive overview of recent developments in the field of (Si)Ge and III-V materials and their integration on Si. The book covers material growth and integration on Si, going all the way from device to circuit design. While the book's focus is on digital applications, a number of chapters also address the use of III-V for RF and analog applications, and in optoelectronics. With CMOS technology moving to the 10nm node and beyond, however, severe concerns with power dissipation and performance are arising, hence the need for this timely work on the advantages and challenges of the technology. Addresses each of the challenges of utilizing high mobility materials for CMOS applications, presenting possible solutions and the latest innovations Covers the latest advances in research on heterogeneous integration, gate stack, device design and scalability Provides a broad overview of the topic, from materials integration to circuits

SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices

Author : David Harame
Publisher : The Electrochemical Society
ISBN 13 : 1566776562
Total Pages : 1136 pages
Book Rating : 4.5/5 (667 download)

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Book Synopsis SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices by : David Harame

Download or read book SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices written by David Harame and published by The Electrochemical Society. This book was released on 2008 with total page 1136 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds have become a key component of the arsenal in improving semiconductor performance. This issue of ECS Transactions discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.

SiGe and Ge

Author : David Louis Harame
Publisher : The Electrochemical Society
ISBN 13 : 1566775078
Total Pages : 1280 pages
Book Rating : 4.5/5 (667 download)

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Book Synopsis SiGe and Ge by : David Louis Harame

Download or read book SiGe and Ge written by David Louis Harame and published by The Electrochemical Society. This book was released on 2006 with total page 1280 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second International SiGe & Ge: Materials, Processing, and Devices Symposium was part of the 2006 ECS conference held in Cancun, Mexico from October 29-Nov 3, 2006. This meeting provided a forum for reviewing and discussing all materials and device related aspects of SiGe & Ge. The hardcover edition includes a bonus CD-ROM containing the PDF of the entire issue.

2009 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors

Author : Yue Kuo
Publisher : The Electrochemical Society
ISBN 13 : 1566777356
Total Pages : 350 pages
Book Rating : 4.5/5 (667 download)

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Book Synopsis 2009 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors by : Yue Kuo

Download or read book 2009 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors written by Yue Kuo and published by The Electrochemical Society. This book was released on 2009-07 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions includes 33 papers that were presented at the Second International Conference on Semiconductor Technology for Ultra Large Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT II), held in the Xi¿an Garden Hotel, Xian, China, July 5-10, 2009. This symposium was sponsored by the Engineering Conferences International.

Defects in Microelectronic Materials and Devices

Author : Daniel M. Fleetwood
Publisher : CRC Press
ISBN 13 : 1420043773
Total Pages : 772 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Defects in Microelectronic Materials and Devices by : Daniel M. Fleetwood

Download or read book Defects in Microelectronic Materials and Devices written by Daniel M. Fleetwood and published by CRC Press. This book was released on 2008-11-19 with total page 772 pages. Available in PDF, EPUB and Kindle. Book excerpt: Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe

Germanium Silicon: Physics and Materials

Author :
Publisher : Academic Press
ISBN 13 : 0080864546
Total Pages : 444 pages
Book Rating : 4.0/5 (88 download)

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Book Synopsis Germanium Silicon: Physics and Materials by :

Download or read book Germanium Silicon: Physics and Materials written by and published by Academic Press. This book was released on 1998-11-09 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Silicon-Germanium Strained Layers and Heterostructures

Author : M. Willander
Publisher : Elsevier
ISBN 13 : 008054102X
Total Pages : 322 pages
Book Rating : 4.0/5 (85 download)

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Book Synopsis Silicon-Germanium Strained Layers and Heterostructures by : M. Willander

Download or read book Silicon-Germanium Strained Layers and Heterostructures written by M. Willander and published by Elsevier. This book was released on 2003-10-02 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt: The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling. * Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review * The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject * Appropriate for students and senior researchers