Silicon Germanium Strained Layers And Heterostructures

Download Silicon Germanium Strained Layers And Heterostructures full books in PDF, epub, and Kindle. Read online Silicon Germanium Strained Layers And Heterostructures ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!

Silicon-Germanium Strained Layers and Heterostructures

Author : M. Willander
Publisher : Elsevier
ISBN 13 : 008054102X
Total Pages : 322 pages
Book Rating : 4.0/5 (85 download)

DOWNLOAD NOW!

Book Synopsis Silicon-Germanium Strained Layers and Heterostructures by : M. Willander

Download or read book Silicon-Germanium Strained Layers and Heterostructures written by M. Willander and published by Elsevier. This book was released on 2003-10-02 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt: The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling. * Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review * The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject * Appropriate for students and senior researchers

Germanium-silicon Strained Layers and Heterostructures

Author : Suresh C. Jain
Publisher :
ISBN 13 :
Total Pages : 328 pages
Book Rating : 4.:/5 (31 download)

DOWNLOAD NOW!

Book Synopsis Germanium-silicon Strained Layers and Heterostructures by : Suresh C. Jain

Download or read book Germanium-silicon Strained Layers and Heterostructures written by Suresh C. Jain and published by . This book was released on 1994 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: Biaxial strain in coherent GeSi layers grown on Si substrates provides a powerful tool for tailoring bandgaps and band offsets. Extremely high electron and hole mobilities have been obtained in modulation-doped GeSi strained layer heterostructures. Ultra-high-speed Heterojunction Bipolar Transistors and MODFETs, and long wavelength (1 to 20 micrometre) IR Detectors have been fabricated using these layers. Quantum wells, ultra-thin period superlattices, and quantum dots can also be fabricated using the strained layers. These devices were previously implemented using III-V semiconductors. Now they can be fabricated using existing Si technology, which is mature and reliable. GeSi strained layer technology has made it possible to manufacture monolithic Si integrated circuits containing heterojunction devices.

Silicon-Germanium Strained Layers and Heterostructures

Author : M. Willander
Publisher : Academic Press
ISBN 13 : 9780127521831
Total Pages : 322 pages
Book Rating : 4.5/5 (218 download)

DOWNLOAD NOW!

Book Synopsis Silicon-Germanium Strained Layers and Heterostructures by : M. Willander

Download or read book Silicon-Germanium Strained Layers and Heterostructures written by M. Willander and published by Academic Press. This book was released on 2003-10-20 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt: The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling. * Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review * The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject * Appropriate for students and senior researchers

Applications of Silicon-Germanium Heterostructure Devices

Author : C.K Maiti
Publisher : CRC Press
ISBN 13 : 1420034693
Total Pages : 402 pages
Book Rating : 4.4/5 (2 download)

DOWNLOAD NOW!

Book Synopsis Applications of Silicon-Germanium Heterostructure Devices by : C.K Maiti

Download or read book Applications of Silicon-Germanium Heterostructure Devices written by C.K Maiti and published by CRC Press. This book was released on 2001-07-20 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of st

SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices

Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 1420066862
Total Pages : 264 pages
Book Rating : 4.4/5 (2 download)

DOWNLOAD NOW!

Book Synopsis SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices by : John D. Cressler

Download or read book SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2017-12-19 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.

Silicon Heterostructure Handbook

Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 1420026585
Total Pages : 1248 pages
Book Rating : 4.4/5 (2 download)

DOWNLOAD NOW!

Book Synopsis Silicon Heterostructure Handbook by : John D. Cressler

Download or read book Silicon Heterostructure Handbook written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 1248 pages. Available in PDF, EPUB and Kindle. Book excerpt: An extraordinary combination of material science, manufacturing processes, and innovative thinking spurred the development of SiGe heterojunction devices that offer a wide array of functions, unprecedented levels of performance, and low manufacturing costs. While there are many books on specific aspects of Si heterostructures, the Silicon Heterostructure Handbook: Materials, Fabrication, Devices, Circuits, and Applications of SiGe and Si Strained-Layer Epitaxy is the first book to bring all aspects together in a single source. Featuring broad, comprehensive, and in-depth discussion, this handbook distills the current state of the field in areas ranging from materials to fabrication, devices, CAD, circuits, and applications. The editor includes "snapshots" of the industrial state-of-the-art for devices and circuits, presenting a novel perspective for comparing the present status with future directions in the field. With each chapter contributed by expert authors from leading industrial and research institutions worldwide, the book is unequalled not only in breadth of scope, but also in depth of coverage, timeliness of results, and authority of references. It also includes a foreword by Dr. Bernard S. Meyerson, a pioneer in SiGe technology. Containing nearly 1000 figures along with valuable appendices, the Silicon Heterostructure Handbook authoritatively surveys materials, fabrication, device physics, transistor optimization, optoelectronics components, measurement, compact modeling, circuit design, and device simulation.

Strained Silicon Heterostructures

Author : C. K. Maiti
Publisher : IET
ISBN 13 : 9780852967782
Total Pages : 520 pages
Book Rating : 4.9/5 (677 download)

DOWNLOAD NOW!

Book Synopsis Strained Silicon Heterostructures by : C. K. Maiti

Download or read book Strained Silicon Heterostructures written by C. K. Maiti and published by IET. This book was released on 2001 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in siliconheterostructure material systems. In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques has given rise to a new area of research of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also for other fascinating novel quantum devices. This book provides an excellent introduction and valuable references for postgraduate students and research scientists.

SiGe and Si Strained-layer Epitaxy for Silicon Heterostructure Devices

Author : John D. Cressler
Publisher :
ISBN 13 : 9781351826105
Total Pages : 264 pages
Book Rating : 4.8/5 (261 download)

DOWNLOAD NOW!

Book Synopsis SiGe and Si Strained-layer Epitaxy for Silicon Heterostructure Devices by : John D. Cressler

Download or read book SiGe and Si Strained-layer Epitaxy for Silicon Heterostructure Devices written by John D. Cressler and published by . This book was released on 2008 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Strained-Si Heterostructure Field Effect Devices

Author : C.K Maiti
Publisher : CRC Press
ISBN 13 : 1420012347
Total Pages : 438 pages
Book Rating : 4.4/5 (2 download)

DOWNLOAD NOW!

Book Synopsis Strained-Si Heterostructure Field Effect Devices by : C.K Maiti

Download or read book Strained-Si Heterostructure Field Effect Devices written by C.K Maiti and published by CRC Press. This book was released on 2007-01-11 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt: A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated wi

SiGe Based Technologies

Author : Y. Shiraki
Publisher : Elsevier
ISBN 13 : 0444596895
Total Pages : 289 pages
Book Rating : 4.4/5 (445 download)

DOWNLOAD NOW!

Book Synopsis SiGe Based Technologies by : Y. Shiraki

Download or read book SiGe Based Technologies written by Y. Shiraki and published by Elsevier. This book was released on 1993-02-18 with total page 289 pages. Available in PDF, EPUB and Kindle. Book excerpt: The preparation of silicon germanium microstructures, their physical, chemical and electrical characterization, and their device processing and application are reviewed in this book. Special emphasis is given to ultrathin Si/Ge superlattices. Topics covered include: Wafer preparation and epitaxial growth; surface effects driven phenomena, such as clustering, segregation, 'surfactants'; Analysis, both in situ and ex situ; Strain adjustment methods; High quality buffers; Modification of material properties by quantum wells and superlattices; Devices: Novel concepts, processing, modelling, demonstrators. The questions highlighted, particularly those articles comparing related or competing activities, will provide a wealth of knowledge for all those interested in the future avenues of theory and applications in this field.

Heterostructures on Silicon: One Step Further with Silicon

Author : Y. Nissim
Publisher : Springer Science & Business Media
ISBN 13 : 9400909136
Total Pages : 361 pages
Book Rating : 4.4/5 (9 download)

DOWNLOAD NOW!

Book Synopsis Heterostructures on Silicon: One Step Further with Silicon by : Y. Nissim

Download or read book Heterostructures on Silicon: One Step Further with Silicon written by Y. Nissim and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 361 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the field of logic circuits in microelectronics, the leadership of silicon is now strongly established due to the achievement of its technology. Near unity yield of one million transistor chips on very large wafers (6 inches today, 8 inches tomorrow) are currently accomplished in industry. The superiority of silicon over other material can be summarized as follow: - The Si/Si0 interface is the most perfect passivating interface ever 2 obtained (less than 10" e y-I cm2 interface state density) - Silicon has a large thermal conductivity so that large crystals can be pulled. - Silicon is a hard material so that large wafers can be handled safely. - Silicon is thermally stable up to 1100°C so that numerous metallurgical operations (oxydation, diffusion, annealing ... ) can be achieved safely. - There is profusion of silicon on earth so that the base silicon wafer is cheap. Unfortunatly, there are fundamental limits that cannot be overcome in silicon due to material properties: laser action, infra-red detection, high mobility for instance. The development of new technologies of deposition and growth has opened new possibilities for silicon based structures. The well known properties of silicon can now be extended and properly used in mixed structures for areas such as opto-electronics, high-speed devices. This has been pioneered by the integration of a GaAs light emitting diode on a silicon based structure by an MIT group in 1985.

Silicon-germanium Heterojunction Bipolar Transistors

Author : John D. Cressler
Publisher : Artech House
ISBN 13 : 1580533612
Total Pages : 570 pages
Book Rating : 4.5/5 (85 download)

DOWNLOAD NOW!

Book Synopsis Silicon-germanium Heterojunction Bipolar Transistors by : John D. Cressler

Download or read book Silicon-germanium Heterojunction Bipolar Transistors written by John D. Cressler and published by Artech House. This book was released on 2003 with total page 570 pages. Available in PDF, EPUB and Kindle. Book excerpt: This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.

Properties of Strained and Relaxed Silicon Germanium

Author : Erich Kasper
Publisher : Institution of Electrical Engineers
ISBN 13 : 9780852968260
Total Pages : 0 pages
Book Rating : 4.9/5 (682 download)

DOWNLOAD NOW!

Book Synopsis Properties of Strained and Relaxed Silicon Germanium by : Erich Kasper

Download or read book Properties of Strained and Relaxed Silicon Germanium written by Erich Kasper and published by Institution of Electrical Engineers. This book was released on 1995 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume systematically evaluates and reviews the properties of silicon germanium within a structured framework, relating them where appropriate to stoichiometry and strain. The invited contributions include concise discussion and expert guidance to the reference literature.

Silicon Molecular Beam Epitaxy

Author : E. Kasper
Publisher : CRC Press
ISBN 13 : 1351085077
Total Pages : 306 pages
Book Rating : 4.3/5 (51 download)

DOWNLOAD NOW!

Book Synopsis Silicon Molecular Beam Epitaxy by : E. Kasper

Download or read book Silicon Molecular Beam Epitaxy written by E. Kasper and published by CRC Press. This book was released on 2018-05-04 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: This subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.

GeSi Strained Layers and Their Applications

Author : A. M. Stoneham
Publisher :
ISBN 13 :
Total Pages : 368 pages
Book Rating : 4.:/5 (655 download)

DOWNLOAD NOW!

Book Synopsis GeSi Strained Layers and Their Applications by : A. M. Stoneham

Download or read book GeSi Strained Layers and Their Applications written by A. M. Stoneham and published by . This book was released on 1995 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon Heterostructure Devices

Author : John D. Cressler
Publisher : CRC Press
ISBN 13 : 1420066919
Total Pages : 472 pages
Book Rating : 4.4/5 (2 download)

DOWNLOAD NOW!

Book Synopsis Silicon Heterostructure Devices by : John D. Cressler

Download or read book Silicon Heterostructure Devices written by John D. Cressler and published by CRC Press. This book was released on 2018-10-03 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: SiGe HBTs are the most mature of the Si heterostructure devices and not surprisingly the most completely researched and discussed in the technical literature. However, new effects and nuances of device operation are uncovered year-after-year as transistor scaling advances and application targets march steadily upward in frequency and sophistication. Providing a comprehensive treatment of SiGe HBTs, Silicon Heterostructure Devices covers an amazingly diverse set of topics, ranging from basic transistor physics to noise, radiation effects, reliability, and TCAD simulation. Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this text explores SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, various other heterostructure devices, as well as optoelectronic components. The book provides an overview, characteristics, and derivative applications for each device covered. It discusses device physics, broadband noise, performance limits, reliability, engineered substrates, and self-assembling nanostructures. Coverage of optoelectronic devices includes Si/SiGe LEDs, near-infrared detectors, photonic transistors for integrated optoelectronics, and quantum cascade emitters. In addition to this substantial collection of material, the book concludes with a look at the ultimate limits of SiGe HBTs scaling. It contains easy-to-reference appendices on topics including the properties of silicon and germanium, the generalized Moll-Ross relations, and the integral charge-control model, and sample SiGe HBT compact model parameters.

Silicon Photonics

Author : M. Jamal Deen
Publisher : John Wiley & Sons
ISBN 13 : 1119940907
Total Pages : 426 pages
Book Rating : 4.1/5 (199 download)

DOWNLOAD NOW!

Book Synopsis Silicon Photonics by : M. Jamal Deen

Download or read book Silicon Photonics written by M. Jamal Deen and published by John Wiley & Sons. This book was released on 2012-03-30 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt: The creation of affordable high speed optical communications using standard semiconductor manufacturing technology is a principal aim of silicon photonics research. This would involve replacing copper connections with optical fibres or waveguides, and electrons with photons. With applications such as telecommunications and information processing, light detection, spectroscopy, holography and robotics, silicon photonics has the potential to revolutionise electronic-only systems. Providing an overview of the physics, technology and device operation of photonic devices using exclusively silicon and related alloys, the book includes: Basic Properties of Silicon Quantum Wells, Wires, Dots and Superlattices Absorption Processes in Semiconductors Light Emitters in Silicon Photodetectors , Photodiodes and Phototransistors Raman Lasers including Raman Scattering Guided Lightwaves Planar Waveguide Devices Fabrication Techniques and Material Systems Silicon Photonics: Fundamentals and Devices outlines the basic principles of operation of devices, the structures of the devices, and offers an insight into state-of-the-art and future developments.