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Experimental Studies Of Electromigration In Advanced Interconnect Systems For Future Ulsi Technology
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Book Synopsis Experimental Studies of Electromigration in Advanced Interconnect Systems for Future ULSI Technology by : Richard Frankovic
Download or read book Experimental Studies of Electromigration in Advanced Interconnect Systems for Future ULSI Technology written by Richard Frankovic and published by . This book was released on 1996 with total page 290 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electromigration in ULSI Interconnections by : Cher Ming Tan
Download or read book Electromigration in ULSI Interconnections written by Cher Ming Tan and published by World Scientific. This book was released on 2010 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electromigration in ULSI Interconnections provides a comprehensive description of the electro migration in integrated circuits. It is intended for both beginner and advanced readers on electro migration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electro migration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electro migration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electro migration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electro migration are presented in a concise and rigorous manner.Methods of numerical modeling for the interconnect electro migration and their applications to the understanding of electro migration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electro migration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electro migration are outlined and discussed.
Book Synopsis Electromigration In Ulsi Interconnections by : Cher Ming Tan
Download or read book Electromigration In Ulsi Interconnections written by Cher Ming Tan and published by World Scientific. This book was released on 2010-06-25 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained.The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed.
Book Synopsis American Doctoral Dissertations by :
Download or read book American Doctoral Dissertations written by and published by . This book was released on 2000 with total page 816 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electromigration in ULSI Interconnections by : Cher Ming Tan
Download or read book Electromigration in ULSI Interconnections written by Cher Ming Tan and published by World Scientific. This book was released on 2010 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed.
Book Synopsis Advanced Interconnects for ULSI Technology by : Mikhail Baklanov
Download or read book Advanced Interconnects for ULSI Technology written by Mikhail Baklanov and published by John Wiley & Sons. This book was released on 2012-02-17 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt: Finding new materials for copper/low-k interconnects is critical to the continuing development of computer chips. While copper/low-k interconnects have served well, allowing for the creation of Ultra Large Scale Integration (ULSI) devices which combine over a billion transistors onto a single chip, the increased resistance and RC-delay at the smaller scale has become a significant factor affecting chip performance. Advanced Interconnects for ULSI Technology is dedicated to the materials and methods which might be suitable replacements. It covers a broad range of topics, from physical principles to design, fabrication, characterization, and application of new materials for nano-interconnects, and discusses: Interconnect functions, characterisations, electrical properties and wiring requirements Low-k materials: fundamentals, advances and mechanical properties Conductive layers and barriers Integration and reliability including mechanical reliability, electromigration and electrical breakdown New approaches including 3D, optical, wireless interchip, and carbon-based interconnects Intended for postgraduate students and researchers, in academia and industry, this book provides a critical overview of the enabling technology at the heart of the future development of computer chips.
Book Synopsis Electromigration in Cu Interconnects by : Dr. Arijit Roy
Download or read book Electromigration in Cu Interconnects written by Dr. Arijit Roy and published by LAP Lambert Academic Publishing. This book was released on 2011-07 with total page 144 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work is intended for the beginners and the advanced readers. Electromigration is VLSI/ULSI interconnection remains one of the major failure issues in microelectronics and electromigration remains an attractive research area in last few decades. This work attempts to explore the driving force formalism of the electromigration phenomenon.The prime interest of this work is to investigate the physics of failure in submicron (down to 100 nm wide) Cu interconnections including the effect of surrounding materials. A combined driving force model, including the forces from the stress and temperature gradients is presented. In order to develop the combined driving force model, commercial finite element analysis package is used. Plenty of experiments on Cu damascene interconnects are conducted, and extensive failure analyses are performed to investigate the root causes of electromigration failure. Good correlations between the model predictions and experiments are obtained. The future challenges on the study of electromigration are also discussed.
Book Synopsis Fundamentals of Electromigration-Aware Integrated Circuit Design by : Jens Lienig
Download or read book Fundamentals of Electromigration-Aware Integrated Circuit Design written by Jens Lienig and published by Springer. This book was released on 2018-02-23 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book provides a comprehensive overview of electromigration and its effects on the reliability of electronic circuits. It introduces the physical process of electromigration, which gives the reader the requisite understanding and knowledge for adopting appropriate counter measures. A comprehensive set of options is presented for modifying the present IC design methodology to prevent electromigration. Finally, the authors show how specific effects can be exploited in present and future technologies to reduce electromigration’s negative impact on circuit reliability.
Book Synopsis Advanced Metallization and Interconnect Systems for ULSI Applications in 1996: Volume 12 by : Robert Havemann
Download or read book Advanced Metallization and Interconnect Systems for ULSI Applications in 1996: Volume 12 written by Robert Havemann and published by Mrs Conference Proceedings. This book was released on 1997 with total page 640 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Book Synopsis High-Speed VLSI Interconnections by : Ashok K. Goel
Download or read book High-Speed VLSI Interconnections written by Ashok K. Goel and published by John Wiley & Sons. This book was released on 2007-10-19 with total page 433 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Second Edition focuses on emerging topics and advances in the field of VLSI interconnections In the decade since High-Speed VLSI Interconnections was first published, several major developments have taken place in the field. Now, updated to reflect these advancements, this Second Edition includes new information on copper interconnections, nanotechnology circuit interconnects, electromigration in the copper interconnections, parasitic inductances, and RLC models for comprehensive analysis of interconnection delays and crosstalk. Each chapter is designed to exist independently or as a part of one coherent unit, and several appropriate exercises are provided at the end of each chapter, challenging the reader to gain further insight into the contents being discussed. Chapter subjects include: * Preliminary Concepts * Parasitic Resistances, Capacitances, and Inductances * Interconnection Delays * Crosstalk Analysis * Electromigration-Induced Failure Analysis * Future Interconnections High-Speed VLSI Interconnections, Second Edition is an indispensable reference for high-speed VLSI designers, RF circuit designers, and advanced students of electrical engineering.
Book Synopsis Electrical & Electronics Abstracts by :
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 1948 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Materials for Information Technology by : Ehrenfried Zschech
Download or read book Materials for Information Technology written by Ehrenfried Zschech and published by Springer Science & Business Media. This book was released on 2006-07-02 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an up to date survey of the state of the art of research into the materials used in information technology, and will be bought by researchers in universities, institutions as well as research workers in the semiconductor and IT industries.
Book Synopsis Proceedings of the ... International Symposium on the Physical & Failure Analysis of Integrated Circuits by :
Download or read book Proceedings of the ... International Symposium on the Physical & Failure Analysis of Integrated Circuits written by and published by . This book was released on 2003 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Atomic Layer Deposition for Semiconductors by : Cheol Seong Hwang
Download or read book Atomic Layer Deposition for Semiconductors written by Cheol Seong Hwang and published by Springer Science & Business Media. This book was released on 2013-10-18 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.
Book Synopsis Advanced Metallization for Future ULSI: Volume 427 by : Materials Research Society. Meeting
Download or read book Advanced Metallization for Future ULSI: Volume 427 written by Materials Research Society. Meeting and published by . This book was released on 1996-11-08 with total page 624 pages. Available in PDF, EPUB and Kindle. Book excerpt: The feature sizes of microelectronic devices have entered the deep submicron regime. The process integration and structure-properties control of the multilevel metal circuitry demand an interdisciplinary interaction and understanding between manufacturing and research. To realize the vision presented in the national technology road map, material and technological challenges will need to be overcome. For example Cu conductor and its barrier metals and low-dielectric constant insulators are at issue. For materials processing, chemical-mechanical planarization and low-temperature filling of high-aspect ratio vias are challenges. For materials examination, the metrology of submicron structures is nontrivial and for materials reliability, the interplay among multiple driving forces and the response in small-dimension microstructures are intriguing. These issues are the focus of this book from MRS. Topics include: road map, technology and metrology of submicron device structures; reliability issues for Cu metallization; Al interconnects and vias; barrier metal; interlevel low-K dielectrics and contact to Si and compound semiconductors.
Book Synopsis Semiconductor Material and Device Characterization by : Dieter K. Schroder
Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Book Synopsis Thermally-Aware Design by : Yong Zhan
Download or read book Thermally-Aware Design written by Yong Zhan and published by Now Publishers Inc. This book was released on 2008 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt: Provides an overview of analysis and optimization techniques for thermally-aware chip design.
