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Electroreflectance Study Of Ion Implanted Zno Single Crystals
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Book Synopsis Electroreflectance Study of Ion-Implanted ZnO Single Crystals by : Louis Hari
Download or read book Electroreflectance Study of Ion-Implanted ZnO Single Crystals written by Louis Hari and published by . This book was released on 1975 with total page 83 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamental edge electroreflectance spectra of ion-implanted zinc oxide (ZnO) single crystals were measured at room temperature using the electrolyte technique. Measurements were made with the electric vector of the incident light both parallel and perpendicular to the hexagonal axis of the crystals. Quantitive results were obtained for the fundamental edge transition. The effects on the electroreflectance spectra due to electrochemical reactions and different band bending conditions were examined. Since the ion-implantation process produced deep-centered impurities, the electroreflectance spectra did not exhibit impurity associated transitions. (Author).
Book Synopsis Electroreflectance Study of Ion-implanted ZnO Single Crystals by : Louis Hari (CAPT, USAF.)
Download or read book Electroreflectance Study of Ion-implanted ZnO Single Crystals written by Louis Hari (CAPT, USAF.) and published by . This book was released on 1975 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1977 with total page 1150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Annealing Studies on the Structural and Magnetical Properties of Co Implanted Zno Single Crystal by : Lanlan Zou
Download or read book Annealing Studies on the Structural and Magnetical Properties of Co Implanted Zno Single Crystal written by Lanlan Zou and published by Open Dissertation Press. This book was released on 2017-01-26 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Annealing Studies on the Structural and Magnetical Properties of Co Implanted ZnO Single Crystal" by Lanlan, Zou, 邹兰兰, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: As a wide band gap semiconductor, Zinc Oxide (ZnO) has recently attracted considerable attention due to its wide applicability. Transition metal (TM) doped ZnO is one of the most intensive research field in the last decade because of its possible application in spintronics devices. The Co-implanted ZnO has been considered as one of the most promising candidate in the field of diluted magnetic semiconductor (DMS). In this study, the magnetic and structural properties of Co-implanted ZnO single crystal were investigated. ZnO single crystals were implanted with 100 keV-Co ions at 300K with a fluence of 1014cm-2and subsequently annealed at 750oC and 900oC respectively. The samples were studied by secondary ion mass spectrometry, X-ray diffraction, photoluminescence, X-ray photoemission spectroscopy and vibrating sample magnetometer. The as-implanted sample seemed to be phase pure while the spinel secondary phase ZnCo2O4 was present in 750oC and 900oC samples showed trace ofCo3O4, Zn0.52Co2.48O4 and metallic Co cluster. All the samples exhibited ferromagnetism at room temperature in low field region, and the magnetic moment was found to decrease and increase after the heat treatment. In high field region, typical paramagnetism was the dominating magnetic property. More than one ferromagnetic mechanism is involved to explain the experimental results. DOI: 10.5353/th_b4979969 Subjects: Zinc oxide Annealing of crystals
Book Synopsis Electroreflectance Study of CdS and ZnO Single Crystals by : Edwin D. Hutchinson (CAPT, USAF.)
Download or read book Electroreflectance Study of CdS and ZnO Single Crystals written by Edwin D. Hutchinson (CAPT, USAF.) and published by . This book was released on 1967 with total page 102 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Surface Characterization of Cu-ion Implanted Single Crystal and Thin Film ZnO for Catalytic Applications by :
Download or read book Surface Characterization of Cu-ion Implanted Single Crystal and Thin Film ZnO for Catalytic Applications written by and published by . This book was released on 1995 with total page 31 pages. Available in PDF, EPUB and Kindle. Book excerpt: Single crystals and thin films of zinc oxide were implanted with copper ions in order to study the catalytic properties of a mixed Cu-ZnO system. ZnO is widely used as a catalyst in the methanol synthesis reaction, and copper has been noted to have a synergistic effect on the rates and yields of reaction. The samples were characterized by x-ray photoelectron spectroscopy (XPS) before and after implantation, and surface copper concentration in the implanted specimens was determined. Implanted samples were heated under oxidizing and reducing atmospheres and re-examined by XPS to determine the oxidation state of the implanted copper species. XPS results demonstrated that the oxidation state of the copper could be manipulated, although there was a corresponding decrease in the concentration of the surface copper ions, relative to temperature and time of heating. jg p.3.
Book Synopsis Implantation of Acceptor Ions Into ZnO Crystals by : John Vedamuthu Kennedy
Download or read book Implantation of Acceptor Ions Into ZnO Crystals written by John Vedamuthu Kennedy and published by . This book was released on 2006 with total page 40 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Studies of Oxygen Implantation Induced Deep Level Defects in Zinc Oxide Single Crystal by : Ziran Ye
Download or read book Studies of Oxygen Implantation Induced Deep Level Defects in Zinc Oxide Single Crystal written by Ziran Ye and published by . This book was released on 2017-01-26 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Studies of Oxygen Implantation Induced Deep Level Defects in Zinc Oxide Single Crystal" by Ziran, Ye, 叶自然, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Zinc Oxide (ZnO)is a wide band gap semiconductor which has attracted great attention because of its wide applicability. In order to obtain semiconductor devices with stable and reproducible properties further study of deep level defects is essential. DLTS (Deep level Transient Spectroscopy) is a direct and straightforward techniqueto determine the energy level of the deep level defects. Other information such as activation energy and capture cross section of the defect can also be obtained through this method. In our study ZnO single crystal samples were implanted by oxygen with the energy of 150keV. After the pretreatment of hydrogen peroxide, Schottky contacts were fabricated with Au film deposited by thermal evaporation. Deep level defects were studied by deep level transient spectroscopy (DLTS). Single peak spectra were observed in the as-implanted sample and samples anneal at 350oC, 650oC and 750oC with the corresponding activation energy decreasing with the annealing temperature from 0.29eV as found in theas-implanted sample. Three peaks were identified in the DLTS spectra of the 900oC sample, with the activation energies of 0.11eV, 0.16eV and 0.37eV respectively.After analysis in detail we found some peaks in the DLTS spectra were the combination of two other peaks, dominated in different temperature range. The thermal evolutions of the deep levels up to the temperature of 1200oC were also investigated. DOI: 10.5353/th_b4715385 Subjects: Zinc oxide - Defects Deep level transient spectroscopy Ion implantation
Book Synopsis Deep Level Defects Study of Arsenic Implanted Zno Single Crystal by : Congyong Zhu
Download or read book Deep Level Defects Study of Arsenic Implanted Zno Single Crystal written by Congyong Zhu and published by Open Dissertation Press. This book was released on 2017-01-27 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Deep Level Defects Study of Arsenic Implanted ZnO Single Crystal" by Congyong, Zhu, 朱從佣, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b4098775 Subjects: Zinc oxide Arsenic Doped semiconductors Semiconductors - Defects Deep level transient spectroscopy
Book Synopsis Deep Level Transient Spectroscopic Study of Intrinsic Defects in Particle-Irradiated Zno Single Crystal Materials by : Xiaohong Lu
Download or read book Deep Level Transient Spectroscopic Study of Intrinsic Defects in Particle-Irradiated Zno Single Crystal Materials written by Xiaohong Lu and published by Open Dissertation Press. This book was released on 2017-01-26 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Deep Level Transient Spectroscopic Study of Intrinsic Defects in Particle-irradiated ZnO Single Crystal Materials" by Xiaohong, Lu, 吕小红, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Zinc oxide (ZnO), as a Ⅱ-Ⅵ compound semiconductor with a wide direct band gap, has attracted great attention from the worldwide researchers for its potential application in the fields of spintronics and optoelectronics. At present research about the defects in ZnO and ZnO-based materials is still far from complete. The deep level defects in melted grown ZnO single crystal induced by helium ions implantation and electron irradiation, as well as their thermal evolution, were studied in this research using the technique of deep level transient spectroscopy (DLTS) and photoluminescence (PL). DLTS results indicated that, besides E3 ( 0.28 ) trap which was widely observed in the as-grown ZnO samples, the deep level with 0.92 was also indentified in the helium-implanted ZnO samples, which was introduced by the ion implantation and tentatively assigned to be the oxygen vacancy (VO). This deep level was removed after 350 oC annealing in argon gas. Annealing at 350 oC also brought along a new deep level with 0.66 into helium-implanted samples which could be annealed out by 650 oC annealing in argon gas. The electron irradiation induced a deep level with 0.59 into ZnO, which was probably associated with the singly charged state of VO. This deep level also tended to be removed at 350 oC annealing in argon gas. The PL spectra revealed that both helium implantation and electron irradiation could improve the bound-exciton peak. Helium implantation also introduced defects emission at 1.90 eV, which was the red luminescence band, into the ZnO single crystal materials. This red luminescence band peak might be associated with DAP recombination. Electron irradiation might restrain the green luminescence in ZnO single crystal. The fine structures could disappear as the measurement temperature increased, leaving the green luminescence band only. DOI: 10.5353/th_b4786991 Subjects: Zinc oxide - Defects Deep level transient spectroscopy
Book Synopsis Deep Level Transient Spectroscopic Study of Nitrogen-Implanted Zno Single Crystal by : Guangwei Ding
Download or read book Deep Level Transient Spectroscopic Study of Nitrogen-Implanted Zno Single Crystal written by Guangwei Ding and published by Open Dissertation Press. This book was released on 2017-01-26 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Deep Level Transient Spectroscopic Study of Nitrogen-implanted ZnO Single Crystal" by Guangwei, Ding, 丁光炜, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b4554159 Subjects: Zinc oxide - Defects Deep level transient spectroscopy
Book Synopsis Photoluminescence Study of Zno Materials by : BIN. XIAO
Download or read book Photoluminescence Study of Zno Materials written by BIN. XIAO and published by . This book was released on 2017-01-26 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Photoluminescence Study of ZnO Materials" by Bin, Xiao, 肖斌, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Zinc oxide (ZnO) is a wide band gap (3.4eV at 300K) II-VI semiconductor with an exciton binding energy up to 60meV and is promising in the realization of excitonic or polaritonic lasing effect. Photoluminescence is widely used in studying the band gap and defect levels of ZnO. However, understanding in defects of ZnO is still far from satisfaction and remains controversial. Different authors suggest different explanations and mechanisms. In the present study we investigate in the photoluminescence spectra of four kinds of ZnO single crystal, namely as-grown (not implanted) Zn-face polished, Zn-implanted, O-implanted and He-implanted. The samples are annealed both in air and argon gas at a temperature of 350, 650, 750, 900 and 1200oC. The results show that O-implanted sample is weaker in excitonic emission and has an annealing effect tendency not consistent with that of Zn-implanted and He-implanted. Ion implantation would introduce defects in favor of yellow luminescence and the defects would anneal out gradually as the annealing temperature is rising. DOI: 10.5353/th_b4715359 Subjects: Zinc oxide - Optical properties Photoluminescence
Book Synopsis Thermal Stability of Ion-implanted ZnO. by :
Download or read book Thermal Stability of Ion-implanted ZnO. written by and published by . This book was released on 2005 with total page 11 pages. Available in PDF, EPUB and Kindle. Book excerpt: Zinc oxide single crystals implanted at room temperature with high-dose (1.4 x 1017 cm−2) 300 keV As ions are annealed at 1000-1200 C. Damage recovery is studied by a combination of Rutherford backscattering/ channeling spectrometry (RBS/C), cross-sectional transmission electron microscopy (XTEM), and atomic force microscopy (AFM). Results show that such a thermal treatment leads to the decomposition and evaporation of the heavily-damaged layer instead of apparent defect recovery and recrystallization that could be inferred from RBS/C and XTEM data alone. Such a relatively poor thermal stability of heavily-damaged ZnO has significant implications for understanding results on thermal annealing of ion-implanted ZnO.
Book Synopsis Deep Level Defects Study of Arsenic Implanted ZnO Single Crystal by : Congyong Zhu
Download or read book Deep Level Defects Study of Arsenic Implanted ZnO Single Crystal written by Congyong Zhu and published by . This book was released on 2008 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Annealing Studies on the Structural and Magnetical Properties of Co Implanted ZnO Single Crystal by : Lanlan Zou
Download or read book Annealing Studies on the Structural and Magnetical Properties of Co Implanted ZnO Single Crystal written by Lanlan Zou and published by . This book was released on 2012 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Annealing Studies on the Structural and Magnetical Properties of Co Implanted ZnO Single Crystal by : Lanlan Zou
Download or read book Annealing Studies on the Structural and Magnetical Properties of Co Implanted ZnO Single Crystal written by Lanlan Zou and published by . This book was released on 2012 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Deep Level Transient Spectroscopic Study of Nitrogen-implanted ZnO Single Crystal by : Guangwei Ding (M. Phil.)
Download or read book Deep Level Transient Spectroscopic Study of Nitrogen-implanted ZnO Single Crystal written by Guangwei Ding (M. Phil.) and published by . This book was released on 2010 with total page 98 pages. Available in PDF, EPUB and Kindle. Book excerpt:
