Electron Devices Based On Ferroelectric Hafnium Oxide Thin Films

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Ferroelectricity in Doped Hafnium Oxide

Author : Uwe Schroeder
Publisher : Woodhead Publishing
ISBN 13 : 0081024312
Total Pages : 572 pages
Book Rating : 4.0/5 (81 download)

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Book Synopsis Ferroelectricity in Doped Hafnium Oxide by : Uwe Schroeder

Download or read book Ferroelectricity in Doped Hafnium Oxide written by Uwe Schroeder and published by Woodhead Publishing. This book was released on 2019-03-27 with total page 572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. - Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices - Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more - Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face

Ferroelectric Thin Films

Author : Masanori Okuyama
Publisher : Springer Science & Business Media
ISBN 13 : 9783540241638
Total Pages : 272 pages
Book Rating : 4.2/5 (416 download)

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Book Synopsis Ferroelectric Thin Films by : Masanori Okuyama

Download or read book Ferroelectric Thin Films written by Masanori Okuyama and published by Springer Science & Business Media. This book was released on 2005-02-22 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.

Formation of Ferroelectricity in Hafnium Oxide Based Thin Films

Author : Tony Schenk
Publisher : BoD – Books on Demand
ISBN 13 : 3743127296
Total Pages : 194 pages
Book Rating : 4.7/5 (431 download)

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Book Synopsis Formation of Ferroelectricity in Hafnium Oxide Based Thin Films by : Tony Schenk

Download or read book Formation of Ferroelectricity in Hafnium Oxide Based Thin Films written by Tony Schenk and published by BoD – Books on Demand. This book was released on 2017-03-15 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt: In 2011, Böscke et al. reported the unexpected discovery of ferroelectric properties in hafnia based thin films, which has since initiated many further studies and revitalized research on the topic of ferroelectric memories. In spite of many efforts, the unveiling of the fundamentals behind this surprising discovery has proven rather challenging. In this work, the originally claimed Pca21 phase is experimentally proven to be the root of the ferroelectric properties and the nature of this ferroelectricity is classified in the frame of existing concepts of ferroelectric materials. Parameters to stabilize this polar phase are examined from a theoretical and fabrication point of view. With these very basic questions addressed, the application relevant electric field cycling behavior is studied. The results of first-order reversal curves, impedance spectroscopy, scanning transmission electron microscopy and piezoresponse force microscopy significantly advance the understanding of structural mechanisms underlying wake-up, fatigue and the novel phenomenon of split-up/merging of transient current peaks. The impact of field cycling behavior on applications like ferroelectric memories is highlighted and routes to optimize it are derived. These findings help to pave the road for a successful commercialization of hafnia based ferroelectrics.

Principles and Applications of Ferroelectrics and Related Materials

Author : M. E. Lines
Publisher : Oxford University Press
ISBN 13 : 9780198507789
Total Pages : 700 pages
Book Rating : 4.5/5 (77 download)

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Book Synopsis Principles and Applications of Ferroelectrics and Related Materials by : M. E. Lines

Download or read book Principles and Applications of Ferroelectrics and Related Materials written by M. E. Lines and published by Oxford University Press. This book was released on 2001-02 with total page 700 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is a standard work on ferroelectrics.

Ferroelectric-Gate Field Effect Transistor Memories

Author : Byung-Eun Park
Publisher : Springer Nature
ISBN 13 : 9811512124
Total Pages : 421 pages
Book Rating : 4.8/5 (115 download)

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Book Synopsis Ferroelectric-Gate Field Effect Transistor Memories by : Byung-Eun Park

Download or read book Ferroelectric-Gate Field Effect Transistor Memories written by Byung-Eun Park and published by Springer Nature. This book was released on 2020-03-23 with total page 421 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.

Oxide Thin Film Transistors

Author : Yue Kuo
Publisher : John Wiley & Sons
ISBN 13 : 1394200250
Total Pages : 244 pages
Book Rating : 4.3/5 (942 download)

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Book Synopsis Oxide Thin Film Transistors by : Yue Kuo

Download or read book Oxide Thin Film Transistors written by Yue Kuo and published by John Wiley & Sons. This book was released on 2024-11-01 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: Comprehensive resource reviewing fundamentals, device physics and reliability, fabrication processes, and numerous emerging applications of oxide thin film transistor technology over performing traditional thin film transistor technologies Oxide Thin Film Transistors book presents a comprehensive overview of oxide thin film transistor (TFT) science and technology, including fundamental material properties, device operation principles, modeling, fabrication processes, and applications. Split into four sections, the book first details oxide TFT materials including material parameters, and electrical and contact properties. The next section describes oxide TFT devices including designs, reliability, and comparison with other TFT types. The third part delves into the fabrication processes of oxide TFTs. The last section provides insight into existing and emerging applications of oxide TFTs including displays, imagers, circuits, sensors, flexible electronics, and circuits. Written by a team of well-reputed researchers in the field including the inventor of the IGZO TFT, Oxide Thin Film Transistors include information on: Electronic and crystal structure of widegap oxides, covering electronic structure of n- and p-type oxide semiconductors as well as doping limit and band alignment Device physics, covering operation principles, reliability, comparison with other TFT types, and high-frequency performance Fabrication processes, covering deposition methods, gate insulators, and passivation layers Applications, covering liquid crystal, light emitting diode, and electrophoretic displays, flexible electronics, imagers, and integrated circuits Oxide Thin Film Transistors is an ideal textbook resource for students who want to learn about oxide TFTs and a useful, up-to-date reference for researchers and engineers working on oxide TFTs and in related areas.

Amorphous Oxide Semiconductors

Author : Hideo Hosono
Publisher : John Wiley & Sons
ISBN 13 : 1119715652
Total Pages : 644 pages
Book Rating : 4.1/5 (197 download)

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Book Synopsis Amorphous Oxide Semiconductors by : Hideo Hosono

Download or read book Amorphous Oxide Semiconductors written by Hideo Hosono and published by John Wiley & Sons. This book was released on 2022-05-17 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt: AMORPHOUS OXIDE SEMICONDUCTORS A singular resource on amorphous oxide semiconductors edited by a world-recognized pioneer in the field In Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory, the Editors deliver a comprehensive account of the current status of—and latest developments in—transparent oxide semiconductor technology. With contributions from leading international researchers and exponents in the field, this edited volume covers physical fundamentals, thin-film transistor applications, processing, circuits and device simulation, display and memory applications, and new materials relevant to amorphous oxide semiconductors. The book makes extensive use of structural diagrams of materials, energy level and energy band diagrams, device structure illustrations, and graphs of device transfer characteristics, photographs and micrographs to help illustrate the concepts discussed within. It also includes: A thorough introduction to amorphous oxide semiconductors, including discussions of commercial demand, common challenges faced during their manufacture, and materials design Comprehensive explorations of the electronic structure of amorphous oxide semiconductors, structural randomness, doping limits, and defects Practical discussions of amorphous oxide semiconductor processing, including oxide materials and interfaces for application and solution-process metal oxide semiconductors for flexible electronics In-depth examinations of thin film transistors (TFTs), including the trade-off relationship between mobility and reliability in oxide TFTs Perfect for practicing scientists, engineers, and device technologists working with transparent semiconductor systems, Amorphous Oxide Semiconductors: IGZO and Related Materials for Display and Memory will also earn a place in the libraries of students studying oxides and other non-classical and innovative semiconductor devices. WILEY SID Series in Display Technology Series Editor: Ian Sage, Abelian Services, Malvern, UK The Society for Information Display (SID) is an international society which has the aim of encouraging the development of all aspects of the field of information display. Complementary to the aims of the society, the Wiley-SID series is intended to explain the latest developments in information display technology at a professional level. The broad scope of the series addresses all facets of information displays from technical aspects through systems and prototypes to standards and ergonomics.

Internal Photoemission Spectroscopy

Author : Valeri V. Afanas'ev
Publisher : Elsevier
ISBN 13 : 0080999301
Total Pages : 404 pages
Book Rating : 4.0/5 (89 download)

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Book Synopsis Internal Photoemission Spectroscopy by : Valeri V. Afanas'ev

Download or read book Internal Photoemission Spectroscopy written by Valeri V. Afanas'ev and published by Elsevier. This book was released on 2014-02-22 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second edition of Internal Photoemission Spectroscopy thoroughly updates this vital, practical guide to internal photoemission (IPE) phenomena and measurements. The book's discussion of fundamental physical and technical aspects of IPE spectroscopic applications is supplemented by an extended overview of recent experimental results in swiftly advancing research fields. These include the development of insulating materials for advanced SiMOS technology, metal gate materials, development of heterostructures based on high-mobility semiconductors, and more. Recent results concerning the band structure of important interfaces in novel materials are covered as well. Internal photoemission involves the physics of charge carrier photoemission from one solid to another, and different spectroscopic applications of this phenomenon to solid state heterojunctions. This technique complements conventional external photoemission spectroscopy by analyzing interfaces separated from the sample surface by a layer of a different solid or liquid. Internal photoemission provides the most straightforward, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method enables the analysis of heterostructures relevant to modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication. - First complete model description of the internal photoemission phenomena - Overview of the most reliable energy barrier determination procedures and trap characterization methods - Overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces with semiconductors and metals

Development of HfO2-Based Ferroelectric Memories for Future CMOS Technology Nodes

Author : Stefan Ferdinand Müller
Publisher : BoD – Books on Demand
ISBN 13 : 3739248947
Total Pages : 137 pages
Book Rating : 4.7/5 (392 download)

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Book Synopsis Development of HfO2-Based Ferroelectric Memories for Future CMOS Technology Nodes by : Stefan Ferdinand Müller

Download or read book Development of HfO2-Based Ferroelectric Memories for Future CMOS Technology Nodes written by Stefan Ferdinand Müller and published by BoD – Books on Demand. This book was released on 2016-04-08 with total page 137 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis evaluates the viability of ferroelectric Si:HfO2 and its derived FeFET application for non-volatile data storage. At the beginning, the ferroelectric effect is explained briefly such that the applications that make use of it can be understood. Afterwards, the latest findings on ferroelectric HfO2 are reviewed and their potential impact on future applications is discussed. Experimental data is presented afterwards focusing on the ferroelectric material characteristics of Si:HfO2 that are most relevant for memory applications. Besides others, the stability of the ferroelectric switching effect could be demonstrated in a temperature range of almost 400 K. Moreover, nanosecond switching speed and endurance in the range of 1 million to 10 billion cycles could be proven. Retention and imprint characteristics have furthermore been analyzed and are shown to be stable for 1000 hours bake time at 125 oC. Derived from the ferroelectric effect in HfO2, a 28 nm FeFET memory cell is introduced as the central application of this thesis. Based on numerical simulations, the memory concept is explained and possible routes towards an optimized FeFET cell are discussed. Subsequently, the results from electrical characterization of FeFET multi-structures are presented and discussed. By using Si:HfO2 it was possible to realize the world's first 28 nm FeFET devices possessing i.a. 10k cycling endurance and an extrapolated 10 year data retention at room temperature. The next step towards a FeFET memory is represented by connecting several memory cells into matrix-type configurations. A cell concept study illustrates the different ways in which FeFET cells can be combined together to give high density memory arrays. For the proposed architectures, operational schemes are theoretically discussed and analyzed by both electrical characterization of FeFET multi-structures and numerical simulations. The thesis concludes with the electrical characterization of small FeFET memory arrays. First results show that a separation between memory states can be achieved by applying poling and incremental step pulse programming (ISPP) sequences. These results represent an important cornerstone for future studies on Si:HfO2 and its related applications.

Atomic Layer Deposition for Semiconductors

Author : Cheol Seong Hwang
Publisher : Springer Science & Business Media
ISBN 13 : 146148054X
Total Pages : 266 pages
Book Rating : 4.4/5 (614 download)

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Book Synopsis Atomic Layer Deposition for Semiconductors by : Cheol Seong Hwang

Download or read book Atomic Layer Deposition for Semiconductors written by Cheol Seong Hwang and published by Springer Science & Business Media. This book was released on 2013-10-18 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.

Emerging Electronic Devices, Circuits and Systems

Author : Chandan Giri
Publisher : Springer Nature
ISBN 13 : 9819900557
Total Pages : 465 pages
Book Rating : 4.8/5 (199 download)

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Book Synopsis Emerging Electronic Devices, Circuits and Systems by : Chandan Giri

Download or read book Emerging Electronic Devices, Circuits and Systems written by Chandan Giri and published by Springer Nature. This book was released on 2023-06-01 with total page 465 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book constitutes peer-reviewed proceedings of a workshop on Emerging Electronics Devices, Circuits, and Systems (EEDCS) held in conjunction with International Symposium on Devices, Circuits, and Systems (ISDCS 2022). The book focuses on the recent development in devices, circuits, and systems. It also discusses innovations, trends, practical challenges, and solutions adopted in device design, modeling, fabrication, characterization, and their circuit implementation with pertinent system applications. It will be useful for researchers, developers, engineers, academicians, and students.

Handbook of Thin Film Deposition

Author : Dominic Schepis
Publisher : Elsevier
ISBN 13 : 044313524X
Total Pages : 428 pages
Book Rating : 4.4/5 (431 download)

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Book Synopsis Handbook of Thin Film Deposition by : Dominic Schepis

Download or read book Handbook of Thin Film Deposition written by Dominic Schepis and published by Elsevier. This book was released on 2024-10-08 with total page 428 pages. Available in PDF, EPUB and Kindle. Book excerpt: Handbook of Thin Film Deposition, Fifth Edition, is a comprehensive reference focusing on thin film technologies and applications used in the semiconductor industry. When pursuing patents, there is a phase called 'reduction to practice' where the idea for a technology transitions from a concept to actual use. The section 'Thin Film Reduction to Practice' includes chapters that review the most relevant methods to fabricate thin films towards practical applications. Then, the latest applications of thin film deposition technologies are discussed. Handbook of Thin Film Deposition, 5th Edition is suitable for materials scientists and engineers in academia and working in semiconductor R&D. - Offers a practical survey of thin film technologies including design, fabrication, and reliability - Covers core processes and applications in the semiconductor industry and discusses latest advances in new thin film development - Features new chapters that review methods on front-end and back-end thin films

Negative Capacitance in Ferroelectric Materials

Author : Michael Hoffmann
Publisher : BoD – Books on Demand
ISBN 13 : 3751999361
Total Pages : 172 pages
Book Rating : 4.7/5 (519 download)

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Book Synopsis Negative Capacitance in Ferroelectric Materials by : Michael Hoffmann

Download or read book Negative Capacitance in Ferroelectric Materials written by Michael Hoffmann and published by BoD – Books on Demand. This book was released on 2020-09-15 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation investigates the phenomenon of negative capacitance in ferroelectric materials, which is promising for overcoming the fundamental limits of energy efficiency in electronics. The focus of this dissertation is on negative capacitance in hafnium oxide based ferroelectrics and the impact of ferroelectric domain formation.

Semiconductor Memories and Systems

Author : Andrea Redaelli
Publisher : Woodhead Publishing
ISBN 13 : 0128209461
Total Pages : 364 pages
Book Rating : 4.1/5 (282 download)

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Book Synopsis Semiconductor Memories and Systems by : Andrea Redaelli

Download or read book Semiconductor Memories and Systems written by Andrea Redaelli and published by Woodhead Publishing. This book was released on 2022-06-07 with total page 364 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Memories and Systems provides a comprehensive overview of the current state of semiconductor memory at the technology and system levels. After an introduction on market trends and memory applications, the book focuses on mainstream technologies, illustrating their current status, challenges and opportunities, with special attention paid to scalability paths. Technologies discussed include static random access memory (SRAM), dynamic random access memory (DRAM), non-volatile memory (NVM), and NAND flash memory. Embedded memory and requirements and system level needs for storage class memory are also addressed. Each chapter covers physical operating mechanisms, fabrication technologies, and the main challenges to scalability.Finally, the work reviews the emerging trends for storage class memory, mainly focusing on the advantages and opportunities of phase change based memory technologies. - Features contributions from experts from leading companies in semiconductor memory - Discusses physical operating mechanisms, fabrication technologies and paths to scalability for current and emerging semiconductor memories - Reviews primary memory technologies, including SRAM, DRAM, NVM and NAND flash memory - Includes emerging storage class memory technologies such as phase change memory

Emerging VLSI Devices, Circuits and Architectures

Author : Anu Gupta
Publisher : Springer Nature
ISBN 13 : 9819752698
Total Pages : 358 pages
Book Rating : 4.8/5 (197 download)

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Book Synopsis Emerging VLSI Devices, Circuits and Architectures by : Anu Gupta

Download or read book Emerging VLSI Devices, Circuits and Architectures written by Anu Gupta and published by Springer Nature. This book was released on with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Ferroelectric Thin Films

Author : Carlos Paz de Araujo
Publisher : Taylor & Francis
ISBN 13 : 9782884491891
Total Pages : 596 pages
Book Rating : 4.4/5 (918 download)

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Book Synopsis Ferroelectric Thin Films by : Carlos Paz de Araujo

Download or read book Ferroelectric Thin Films written by Carlos Paz de Araujo and published by Taylor & Francis. This book was released on 1996 with total page 596 pages. Available in PDF, EPUB and Kindle. Book excerpt: The impetus for the rapid development of thin film technology, relative to that of bulk materials, is its application to a variety of microelectronic products. Many of the characteristics of thin film ferroelectric materials are utilized in the development of these products - namely, their nonvolatile memory and piezoelectric, pyroelectric, and electro-optic properties. It is befitting, therefore, that the first of a set of three complementary books with the general title Integrated Ferroelectric Devices and Technologies focuses on the synthesis of thin film ferroelectric materials and their basic properties. Because it is a basic introduction to the chemistry, materials science, processing, and physics of the materials from which integrated ferroelectrics are made, newcomers to this field as well as veterans will find this book self-contained and invaluable in acquiring the diverse elements requisite to success in their work in this area. It is directed at electronic engineers and physicists as well as process and system engineers, ceramicists, and chemists involved in the research, design, development, manufacturing, and utilization of thin film ferroelectric materials.

Micro and Nanoelectronics Devices, Circuits and Systems

Author : Trupti Ranjan Lenka
Publisher : Springer Nature
ISBN 13 : 9811923086
Total Pages : 519 pages
Book Rating : 4.8/5 (119 download)

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Book Synopsis Micro and Nanoelectronics Devices, Circuits and Systems by : Trupti Ranjan Lenka

Download or read book Micro and Nanoelectronics Devices, Circuits and Systems written by Trupti Ranjan Lenka and published by Springer Nature. This book was released on 2022-09-12 with total page 519 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents select proceedings of the International Conference on Micro and Nanoelectronics Devices, Circuits and Systems (MNDCS-2022). The book includes cutting-edge research papers in the emerging fields of micro and nanoelectronics devices, circuits, and systems from experts working in these fields over the last decade. The book is a unique collection of chapters from different areas with a common theme and is immensely useful to academic researchers and practitioners in the industry who work in this field.