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Ferroelectricity In Doped Hafnium Oxide
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Book Synopsis Ferroelectricity in Doped Hafnium Oxide by : Uwe Schroeder
Download or read book Ferroelectricity in Doped Hafnium Oxide written by Uwe Schroeder and published by Woodhead Publishing. This book was released on 2019-03-27 with total page 570 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face
Book Synopsis Ferroelectric Thin Films by : Masanori Okuyama
Download or read book Ferroelectric Thin Films written by Masanori Okuyama and published by Springer Science & Business Media. This book was released on 2005-02-22 with total page 272 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.
Book Synopsis Electrical Characterisation of Ferroelectric Field Effect Transistors Based on Ferroelectric HfO2 Thin Films by : Ekaterina Yurchuk
Download or read book Electrical Characterisation of Ferroelectric Field Effect Transistors Based on Ferroelectric HfO2 Thin Films written by Ekaterina Yurchuk and published by . This book was released on 2015 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ferroelectric-Gate Field Effect Transistor Memories by : Byung-Eun Park
Download or read book Ferroelectric-Gate Field Effect Transistor Memories written by Byung-Eun Park and published by Springer Nature. This book was released on 2020-03-23 with total page 421 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and promising applications of FET-type ferroelectric memory devices, presenting a comprehensive review of past, present, and future technologies. The topics discussed will lead to further advances in large-area electronics implemented on glass, plastic or paper substrates as well as in conventional Si electronics. The book is composed of chapters written by leading researchers in ferroelectric materials and related device technologies, including oxide and organic ferroelectric thin films.
Book Synopsis Formation of Ferroelectricity in Hafnium Oxide Based Thin Films by : Tony Schenk
Download or read book Formation of Ferroelectricity in Hafnium Oxide Based Thin Films written by Tony Schenk and published by BoD – Books on Demand. This book was released on 2017-03-15 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt: In 2011, Böscke et al. reported the unexpected discovery of ferroelectric properties in hafnia based thin films, which has since initiated many further studies and revitalized research on the topic of ferroelectric memories. In spite of many efforts, the unveiling of the fundamentals behind this surprising discovery has proven rather challenging. In this work, the originally claimed Pca21 phase is experimentally proven to be the root of the ferroelectric properties and the nature of this ferroelectricity is classified in the frame of existing concepts of ferroelectric materials. Parameters to stabilize this polar phase are examined from a theoretical and fabrication point of view. With these very basic questions addressed, the application relevant electric field cycling behavior is studied. The results of first-order reversal curves, impedance spectroscopy, scanning transmission electron microscopy and piezoresponse force microscopy significantly advance the understanding of structural mechanisms underlying wake-up, fatigue and the novel phenomenon of split-up/merging of transient current peaks. The impact of field cycling behavior on applications like ferroelectric memories is highlighted and routes to optimize it are derived. These findings help to pave the road for a successful commercialization of hafnia based ferroelectrics.
Book Synopsis Principles and Applications of Ferroelectrics and Related Materials by : M. E. Lines
Download or read book Principles and Applications of Ferroelectrics and Related Materials written by M. E. Lines and published by Oxford University Press. This book was released on 2001-02 with total page 700 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is a standard work on ferroelectrics.
Book Synopsis Internal Photoemission Spectroscopy by : Valeri V. Afanas'ev
Download or read book Internal Photoemission Spectroscopy written by Valeri V. Afanas'ev and published by Elsevier. This book was released on 2014-02-22 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second edition of Internal Photoemission Spectroscopy thoroughly updates this vital, practical guide to internal photoemission (IPE) phenomena and measurements. The book's discussion of fundamental physical and technical aspects of IPE spectroscopic applications is supplemented by an extended overview of recent experimental results in swiftly advancing research fields. These include the development of insulating materials for advanced SiMOS technology, metal gate materials, development of heterostructures based on high-mobility semiconductors, and more. Recent results concerning the band structure of important interfaces in novel materials are covered as well. Internal photoemission involves the physics of charge carrier photoemission from one solid to another, and different spectroscopic applications of this phenomenon to solid state heterojunctions. This technique complements conventional external photoemission spectroscopy by analyzing interfaces separated from the sample surface by a layer of a different solid or liquid. Internal photoemission provides the most straightforward, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method enables the analysis of heterostructures relevant to modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication. First complete model description of the internal photoemission phenomena Overview of the most reliable energy barrier determination procedures and trap characterization methods Overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces with semiconductors and metals
Book Synopsis Pulsed Laser Deposition of Thin Films by : Robert Eason
Download or read book Pulsed Laser Deposition of Thin Films written by Robert Eason and published by John Wiley & Sons. This book was released on 2007-12-14 with total page 754 pages. Available in PDF, EPUB and Kindle. Book excerpt: Edited by major contributors to the field, this text summarizes current or newly emerging pulsed laser deposition application areas. It spans the field of optical devices, electronic materials, sensors and actuators, biomaterials, and organic polymers. Every scientist, technologist and development engineer who has a need to grow and pattern, to apply and use thin film materials will regard this book as a must-have resource.
Book Synopsis Metal Oxides for Non-volatile Memory by : Panagiotis Dimitrakis
Download or read book Metal Oxides for Non-volatile Memory written by Panagiotis Dimitrakis and published by Elsevier. This book was released on 2022-03-01 with total page 534 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal Oxides for Non-volatile Memory: Materials, Technology and Applications covers the technology and applications of metal oxides (MOx) in non-volatile memory (NVM) technology. The book addresses all types of NVMs, including floating-gate memories, 3-D memories, charge-trapping memories, quantum-dot memories, resistance switching memories and memristors, Mott memories and transparent memories. Applications of MOx in DRAM technology where they play a crucial role to the DRAM evolution are also addressed. The book offers a broad scope, encompassing discussions of materials properties, deposition methods, design and fabrication, and circuit and system level applications of metal oxides to non-volatile memory. Finally, the book addresses one of the most promising materials that may lead to a solution to the challenges in chip size and capacity for memory technologies, particular for mobile applications and embedded systems. Systematically covers metal oxides materials and their properties with memory technology applications, including floating-gate memory, 3-D memory, memristors, and much more Provides an overview on the most relevant deposition methods, including sputtering, CVD, ALD and MBE Discusses the design and fabrication of metal oxides for wide breadth of non-volatile memory applications from 3-D flash technology, transparent memory and DRAM technology
Book Synopsis Crystalline Hafnia and Zirconia based Dielectrics for Memory Applications by : Tim S. Böscke
Download or read book Crystalline Hafnia and Zirconia based Dielectrics for Memory Applications written by Tim S. Böscke and published by Cuvillier Verlag. This book was released on 2010-05-31 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work investigates the crystallography and dielectric properties of Zirconium- and Hafnium-oxide based nano-scale thin film insulators for memory. Hafnium- and Zirconium-oxide are industry leading candidates for high-k dielectrics. Most application research has focused on the application of amorphous high-k due to formation of defects associated with the crystalline phase. However the application of crystalline dielectrics offers two advantages: Potentially high thermal stability, since no measures have to be taken to avoid crystallization, and the ability to manipulate crystalline phase composition to maximize dielectric constants. Pure ZrO2 crystallized at a lower temperature than HfO2 and always formed a metastable t’ higher-k phase. ZrO2 crystallized already during deposition, leading to leakage current degradation. It was shown that this problem could be solved by SiO2 addition to raise the crystallization temperature, allowing fabrication of low leakage, low effective oxide thickness (EOT) metal-insulator-metal (MIM) capacitors suitable for stack based DRAM down to the 4X nm node. HfO2, in contrast, formed a mixture of monoclinic and tetragonal phase which led to the formation of mechanical defects (microcracks). Addition of SiO2 allowed manipulating the phase composition of HfO2. When up to 7 mol% SiO2 was added, increased stabilization of the metastable t' phase with a dielectric constant of 34-36 was observed. It could be shown that the stabilization is due to a combination of a surface energy effect and solved SiO2 in the HfO2 lattice. Above 11 mol% SiO2 segregated from HfO2 and a tetragonal phase with higher c/a splitting and lower dielectric constant was stabilized instead. It was discovered that the behavior of HfSiO was fundamentally altered if it was crystallized under mechanical confinement in presence of a top electrode. Besides a significant increase in dielectric constant, the material exhibited ferroelectric and antiferroelectric polarization hysteresis, a characteristic not previously reported for HfO2 or ZrO2. This behavior originated from the formation of a new orthorhombic crystal phase. Utilizing the increased permittivity of the antiferroelectic phase, it was possible to demonstrate low EOT, highly temperature stable, MIM capacitors with potential application in sub 50 nm deep trench-DRAM generations. Novel ferroelectric HfSiO was used to fabricate ferroelectric field effect transistors which allowed long term nonvolatile data storage. The electrical characteristics of the devices meet or exceed that of the best published literature results. Full compatibility to silicon semiconductor technology with a gate stack thickness down to 5 nm was demonstrated for the first time, suggesting that HfSiO based FEFETs can potentially be scaled to below the 30 nm node. This goal could not be achieved with previously known materials.
Book Synopsis Negative Capacitance in Ferroelectric Materials by : Michael Hoffmann
Download or read book Negative Capacitance in Ferroelectric Materials written by Michael Hoffmann and published by BoD – Books on Demand. This book was released on 2020-09-15 with total page 172 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation investigates the phenomenon of negative capacitance in ferroelectric materials, which is promising for overcoming the fundamental limits of energy efficiency in electronics. The focus of this dissertation is on negative capacitance in hafnium oxide based ferroelectrics and the impact of ferroelectric domain formation.
Book Synopsis Development and Investigation of Novel Logic-in-Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide-Based Ferroelectric Field-Effect Transistors by : Evelyn Tina Breyer
Download or read book Development and Investigation of Novel Logic-in-Memory and Nonvolatile Logic Circuits Utilizing Hafnium Oxide-Based Ferroelectric Field-Effect Transistors written by Evelyn Tina Breyer and published by BoD – Books on Demand. This book was released on 2022-02-08 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: Not only conventional computer architectures, such as the von-Neumann architecture with its inevitable von-Neumann bottleneck, but likewise the emerging field of edge computing require to substantially decrease the spatial separation of logic and memory units to overcome power and latency shortages. The integration of logic operations into memory units (Logic-in-Memory), as well as memory elements into logic circuits (Nonvolatile Logic), promises to fulfill this request by combining high-speed with low-power operation. Ferroelectric field-effect transistors (FeFETs) based on hafnium oxide prove to be auspicious candidates for the memory elements in applications of that kind, as those nonvolatile memory elements are CMOS-compatible and likewise scalable. This work presents implementations that merge logic and memory by exploiting the natural capability of the FeFET to combine logic functionality (transistor) and memory ability (nonvolatility).
Book Synopsis Micro-Electronics and Telecommunication Engineering by : Devendra Kumar Sharma
Download or read book Micro-Electronics and Telecommunication Engineering written by Devendra Kumar Sharma and published by Springer Nature. This book was released on 2020-04-02 with total page 735 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents selected papers from the 3rd International Conference on Micro-Electronics and Telecommunication Engineering, held at SRM Institute of Science and Technology, Ghaziabad, India, on 30-31 August 2019. It covers a wide variety of topics in micro-electronics and telecommunication engineering, including micro-electronic engineering, computational remote sensing, computer science and intelligent systems, signal and image processing, and information and communication technology.
Book Synopsis Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films by : Ekaterina Yurchuk
Download or read book Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films written by Ekaterina Yurchuk and published by Logos Verlag Berlin GmbH. This book was released on 2015-06-30 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO2 thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO2 thin films was analysed in order to gain better insight into the occurrence of ferroelectricity in this system. A subsequent examination of the potential of this material as well as its possible limitations with the respect to the application in non-volatile memories followed. The Si:HfO2-based ferroelectric transistors that were fully integrated into the state-of-the-art high-k metal gate CMOS technology were studied in this work for the first time. The memory performance of these devices scaled down to 28 nm gate length was investigated. Special attention was paid to the charge trapping phenomenon shown to significantly affect the device behaviour.
Book Synopsis Semiconductor Devices and Technologies for Future Ultra Low Power Electronics by : D. Nirmal
Download or read book Semiconductor Devices and Technologies for Future Ultra Low Power Electronics written by D. Nirmal and published by CRC Press. This book was released on 2021-12-10 with total page 303 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the fundamentals and significance of 2-D materials and related semiconductor transistor technologies for the next-generation ultra low power applications. It provides comprehensive coverage on advanced low power transistors such as NCFETs, FinFETs, TFETs, and flexible transistors for future ultra low power applications owing to their better subthreshold swing and scalability. In addition, the text examines the use of field-effect transistors for biosensing applications and covers design considerations and compact modeling of advanced low power transistors such as NCFETs, FinFETs, and TFETs. TCAD simulation examples are also provided. FEATURES Discusses the latest updates in the field of ultra low power semiconductor transistors Provides both experimental and analytical solutions for TFETs and NCFETs Presents synthesis and fabrication processes for FinFETs Reviews details on 2-D materials and 2-D transistors Explores the application of FETs for biosensing in the healthcare field This book is aimed at researchers, professionals, and graduate students in electrical engineering, electronics and communication engineering, electron devices, nanoelectronics and nanotechnology, microelectronics, and solid-state circuits.
Book Synopsis Physics of Ferroelectrics by : Karin M. Rabe
Download or read book Physics of Ferroelectrics written by Karin M. Rabe and published by Springer Science & Business Media. This book was released on 2007-07-20 with total page 395 pages. Available in PDF, EPUB and Kindle. Book excerpt: The past two decades have witnessed revolutionary breakthroughs in the understanding of ferroelectric materials, both from the perspective of theory and experiment. This book addresses the paradigmatic shifts in understanding brought about by these breakthroughs, including the consideration of novel fabrication methods and nanoscale applications of these materials, and new theoretical methods such as the effective Hamiltonian approach and density functional theory.
Book Synopsis Resistive Switching by : Daniele Ielmini
Download or read book Resistive Switching written by Daniele Ielmini and published by John Wiley & Sons. This book was released on 2015-12-28 with total page 784 pages. Available in PDF, EPUB and Kindle. Book excerpt: With its comprehensive coverage, this reference introduces readers to the wide topic of resistance switching, providing the knowledge, tools, and methods needed to understand, characterize and apply resistive switching memories. Starting with those materials that display resistive switching behavior, the book explains the basics of resistive switching as well as switching mechanisms and models. An in-depth discussion of memory reliability is followed by chapters on memory cell structures and architectures, while a section on logic gates rounds off the text. An invaluable self-contained book for materials scientists, electrical engineers and physicists dealing with memory research and development.
