Coupled Diffusion Of Impurity Atoms And Point Defects In Silicon Crystals

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Coupled Diffusion Of Impurity Atoms And Point Defects In Silicon Crystals

Author : Oleg Velichko
Publisher : World Scientific
ISBN 13 : 1786347172
Total Pages : 404 pages
Book Rating : 4.7/5 (863 download)

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Book Synopsis Coupled Diffusion Of Impurity Atoms And Point Defects In Silicon Crystals by : Oleg Velichko

Download or read book Coupled Diffusion Of Impurity Atoms And Point Defects In Silicon Crystals written by Oleg Velichko and published by World Scientific. This book was released on 2019-11-05 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.

Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon

Author : Peter Pichler
Publisher : Springer Science & Business Media
ISBN 13 : 3709105978
Total Pages : 554 pages
Book Rating : 4.7/5 (91 download)

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Book Synopsis Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon by : Peter Pichler

Download or read book Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 554 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.

Fundamentals of Semiconductor Processing Technology

Author : Badih El-Kareh
Publisher : Springer Science & Business Media
ISBN 13 : 1461522099
Total Pages : 605 pages
Book Rating : 4.4/5 (615 download)

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Book Synopsis Fundamentals of Semiconductor Processing Technology by : Badih El-Kareh

Download or read book Fundamentals of Semiconductor Processing Technology written by Badih El-Kareh and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 605 pages. Available in PDF, EPUB and Kindle. Book excerpt: The drive toward new semiconductor technologies is intricately related to market demands for cheaper, smaller, faster, and more reliable circuits with lower power consumption. The development of new processing tools and technologies is aimed at optimizing one or more of these requirements. This goal can, however, only be achieved by a concerted effort between scientists, engineers, technicians, and operators in research, development, and manufac turing. It is therefore important that experts in specific disciplines, such as device and circuit design, understand the principle, capabil ities, and limitations of tools and processing technologies. It is also important that those working on specific unit processes, such as lithography or hot processes, be familiar with other unit processes used to manufacture the product. Several excellent books have been published on the subject of process technologies. These texts, however, cover subjects in too much detail, or do not cover topics important to modem tech nologies. This book is written with the need for a "bridge" between different disciplines in mind. It is intended to present to engineers and scientists those parts of modem processing technologies that are of greatest importance to the design and manufacture of semi conductor circuits. The material is presented with sufficient detail to understand and analyze interactions between processing and other semiconductor disciplines, such as design of devices and cir cuits, their electrical parameters, reliability, and yield.

Point Defects and Diffusion

Author : C. P. Flynn
Publisher :
ISBN 13 :
Total Pages : 848 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Point Defects and Diffusion by : C. P. Flynn

Download or read book Point Defects and Diffusion written by C. P. Flynn and published by . This book was released on 1972 with total page 848 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Gettering and Defect Engineering in Semiconductor Technology VII

Author : Cor Claeys
Publisher : Trans Tech Publications Ltd
ISBN 13 : 3035706719
Total Pages : 556 pages
Book Rating : 4.0/5 (357 download)

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Book Synopsis Gettering and Defect Engineering in Semiconductor Technology VII by : Cor Claeys

Download or read book Gettering and Defect Engineering in Semiconductor Technology VII written by Cor Claeys and published by Trans Tech Publications Ltd. This book was released on 1997-07-25 with total page 556 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defect control relies more and more upon advanced fabrication approaches such as the use of slow pulling rates and hydrogen annealing. Gettering techniques remain of key importance in enhancing the device yield.

Handbook of Materials Structures, Properties, Processing and Performance

Author : Lawrence E. Murr
Publisher : Springer
ISBN 13 : 9783319019055
Total Pages : 1500 pages
Book Rating : 4.0/5 (19 download)

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Book Synopsis Handbook of Materials Structures, Properties, Processing and Performance by : Lawrence E. Murr

Download or read book Handbook of Materials Structures, Properties, Processing and Performance written by Lawrence E. Murr and published by Springer. This book was released on 2021-01-14 with total page 1500 pages. Available in PDF, EPUB and Kindle. Book excerpt: This extensive knowledge base provides a coherent description of advanced topics in materials science and engineering with an interdisciplinary/multidisciplinary approach. The book incorporates a historical account of critical developments and the evolution of materials fundamentals, providing an important perspective for materials innovations, including advances in processing, selection, characterization, and service life prediction. It includes the perspectives of materials chemistry, materials physics, engineering design, and biological materials as these relate to crystals, crystal defects, and natural and biological materials hierarchies, from the atomic and molecular to the macroscopic, and emphasizing natural and man-made composites. This expansive presentation of topics explores interrelationships among properties, processing, and synthesis (historic and contemporary). The book serves as both an authoritative reference and roadmap of advanced materials concepts for practitioners, graduate-level students, and faculty coming from a range of disciplines.

Defects and Diffusion in Solids

Author : Stanisław Mrowec
Publisher : Elsevier Science & Technology
ISBN 13 :
Total Pages : 474 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Defects and Diffusion in Solids by : Stanisław Mrowec

Download or read book Defects and Diffusion in Solids written by Stanisław Mrowec and published by Elsevier Science & Technology. This book was released on 1980 with total page 474 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Compatibility and Testing of Electronic Components

Author : C. E. Jowett
Publisher : Elsevier
ISBN 13 : 1483103358
Total Pages : 354 pages
Book Rating : 4.4/5 (831 download)

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Book Synopsis Compatibility and Testing of Electronic Components by : C. E. Jowett

Download or read book Compatibility and Testing of Electronic Components written by C. E. Jowett and published by Elsevier. This book was released on 2016-08-10 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compatibility and Testing of Electronic Components outlines the concepts of component part life according to thresholds of failure; the advantages that result from identifying such thresholds; their identification; and the various tests used in their detection. The book covers topics such as the interconnection of miniature passive components; the integrated circuit compatibility and its components; the semiconductor joining techniques; and the thin film hybrid approach in integrated circuits. Also covered are topics such as thick film resistors, conductors, and insulators; thin inlays for electronic applications; and humidity corrosion of metallic resistors. The text is recommended for electrical engineers who would like to know more about electrical components, especially those who are interested in the fields of thin films and integrated circuitry.

Nuclear Science Abstracts

Author :
Publisher :
ISBN 13 :
Total Pages : 912 pages
Book Rating : 4.0/5 ( download)

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Book Synopsis Nuclear Science Abstracts by :

Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1976-05 with total page 912 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Handbook of Photovoltaic Silicon

Author : Deren Yang
Publisher : Springer
ISBN 13 : 9783662564714
Total Pages : 0 pages
Book Rating : 4.5/5 (647 download)

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Book Synopsis Handbook of Photovoltaic Silicon by : Deren Yang

Download or read book Handbook of Photovoltaic Silicon written by Deren Yang and published by Springer. This book was released on 2019-11-28 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The utilization of sun light is one of the hottest topics in sustainable energy research. To efficiently convert sun power into a reliable energy – electricity – for consumption and storage, silicon and its derivatives have been widely studied and applied in solar cell systems. This handbook covers the photovoltaics of silicon materials and devices, providing a comprehensive summary of the state of the art of photovoltaic silicon sciences and technologies. This work is divided into various areas including but not limited to fundamental principles, design methodologies, wafering techniques/fabrications, characterizations, applications, current research trends and challenges. It offers the most updated and self-explanatory reference to all levels of students and acts as a quick reference to the experts from the fields of chemistry, material science, physics, chemical engineering, electrical engineering, solar energy, etc..

Atomic Diffusion in Semiconductors

Author : Derek Shaw
Publisher : Springer
ISBN 13 :
Total Pages : 630 pages
Book Rating : 4.:/5 (42 download)

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Book Synopsis Atomic Diffusion in Semiconductors by : Derek Shaw

Download or read book Atomic Diffusion in Semiconductors written by Derek Shaw and published by Springer. This book was released on 1973-05 with total page 630 pages. Available in PDF, EPUB and Kindle. Book excerpt: The diffusion or migration of atoms in matter, of whatever form, is a basic consequence of the existence of atoms. In metals, atomic diffusion has a well established position of importance as it is recognized that there are few metallurgical processes which do not embody the diffusion of one or more of the constituents. As regards semiconductors any thermal annealing treatment involves atomic diffusion. In semiconductor technology diffusion processes provide a vital and basic means of fabricating doped structures. Notwithstanding the importance of diffusion in the preparative processes of semiconductor structures and samples, the diffusion based aspects have acquired an empirical outlook verging almost on alchemy. The first attempt to present a systematic account of semiconductor diffusion processes was made by Boltaks [11 in 1961. During the decade since Boltaks' book appeared much work germane to understanding the atomic mechanisms responsible for diffusion in semiconductors has been published. The object of the present book is to give an account of, and to consolidate, present knowledge of semiconductor diffusion in terms of basic concepts of atomic migration in crystalline lattices. To this end, exhaustive compilations of empirical data have been avoided as these are available elsewhere [2, 31 : attention has been limited to considering evidence capable of yielding insight into the physical processes concerned in atomic diffusion.

Concepts of Materials Science

Author : Adrian P. Sutton
Publisher : Oxford University Press
ISBN 13 : 0192846833
Total Pages : 161 pages
Book Rating : 4.1/5 (928 download)

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Book Synopsis Concepts of Materials Science by : Adrian P. Sutton

Download or read book Concepts of Materials Science written by Adrian P. Sutton and published by Oxford University Press. This book was released on 2021 with total page 161 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an expert perspective and a unique insight into the essence of the science of materials, introducing the reader to ten fundamental concepts underpinning the subject. It is suitable for undergraduate and pre-university students of physics, chemistry and mathematics.

Imperfections and Impurities in Semiconductor Silicon

Author : K. V. Ravi
Publisher : John Wiley & Sons
ISBN 13 :
Total Pages : 408 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Imperfections and Impurities in Semiconductor Silicon by : K. V. Ravi

Download or read book Imperfections and Impurities in Semiconductor Silicon written by K. V. Ravi and published by John Wiley & Sons. This book was released on 1981 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Point Defects in Solids

Author : Lawrence M. Slifkin
Publisher : Springer
ISBN 13 :
Total Pages : 506 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Point Defects in Solids by : Lawrence M. Slifkin

Download or read book Point Defects in Solids written by Lawrence M. Slifkin and published by Springer. This book was released on 1972 with total page 506 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume 1 of Point Defects in Solids has as its major emphasis defects in ionic solids. Volume 2 now extends this emphasis to semiconductors. The first four chapters treat in some detail the creation, kinetic behavior, inter actions, and physical properties of both simple and composite defects in a variety of semiconducting systems. Also included, as in Vol. 1, are chapters on special topics, namely phonon-defect interactions and defects in organic crystals. Defect behavior in semiconductors has been a subject of considerable interest since the discovery some twenty-five years ago that fast neutron irradiation profoundly affected the electrical characteristics of germanium and silicon. Present-day interest has been stimulated by such semiconductor applications as solar cell power plants for space stations and satellites and semiconductor particle and y-ray detectors, since in both radiation damage can cause serious deterioration. Of even greater practical concern is the need to understand particle damage in order to capitalize upon the develop ing technique of ion implantation as a means of device fabrication. Although the periodic international conferences on radiation effects in semiconductors have served the valuable function of summarizing the extensive work being done in this field, these proceedings are much too detailed and lack the background discussion needed to make them useful to the novice.

Physics of Radiation Effects in Crystals

Author : R.A. Johnson
Publisher : Elsevier
ISBN 13 : 0444598227
Total Pages : 736 pages
Book Rating : 4.4/5 (445 download)

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Book Synopsis Physics of Radiation Effects in Crystals by : R.A. Johnson

Download or read book Physics of Radiation Effects in Crystals written by R.A. Johnson and published by Elsevier. This book was released on 2012-12-02 with total page 736 pages. Available in PDF, EPUB and Kindle. Book excerpt: ``Physics of Radiation Effects in Crystals'' is presented in two parts. The first part covers the general background and theory of radiation effects in crystals, including the theory describing the generation of crystal lattice defects by radiation, the kinetic approach to the study of the disposition of these defects and the effects of the diffusion of these defects on alloy compositions and phases. Specific problems of current interest are treated in the second part and include anisotropic dimensional changes in x-uranium, zirconium and graphite, acceleration of thermal creep in reactor materials, and radiation damage of semiconductors and superconductors.

Point Defects in Semiconductors I

Author : M. Lannoo
Publisher : Springer Science & Business Media
ISBN 13 : 364281574X
Total Pages : 283 pages
Book Rating : 4.6/5 (428 download)

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Book Synopsis Point Defects in Semiconductors I by : M. Lannoo

Download or read book Point Defects in Semiconductors I written by M. Lannoo and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 283 pages. Available in PDF, EPUB and Kindle. Book excerpt: From its early beginning before the war, the field of semiconductors has developped as a classical example where the standard approximations of 'band theory' can be safely used to study its interesting electronic properties. Thus in these covalent crystals, the electronic structure is only weakly coupled with the atomic vibrations; one-electron Bloch functions can be used and their energy bands can be accurately computed in the neighborhood of the energy gap between the valence and conduction bands; nand p doping can be obtained by introducing substitutional impurities which only introduce shallow donors and acceptors and can be studied by an effective-mass weak-scattering description. Yet, even at the beginning, it was known from luminescence studies that these simple concepts failed to describe the various 'deep levels' introduced near the middle of the energy gap by strong localized imperfections. These imperfections not only include some interstitial and many substitutional atoms, but also 'broken bonds' associated with surfaces and interfaces, dis location cores and 'vacancies', i.e., vacant iattice sites in the crystal. In all these cases, the electronic structure can be strongly correlated with the details of the atomic structure and the atomic motion. Because these 'deep levels' are strongly localised, electron-electron correlations can also playa significant role, and any weak perturbation treatment from the perfect crystal structure obviously fails. Thus, approximate 'strong coupling' techniques must often be used, in line' with a more chemical de scription of bonding.

Point Defects in Solids

Author : James H. Crawford
Publisher : Springer Science & Business Media
ISBN 13 : 1468429701
Total Pages : 568 pages
Book Rating : 4.4/5 (684 download)

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Book Synopsis Point Defects in Solids by : James H. Crawford

Download or read book Point Defects in Solids written by James H. Crawford and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 568 pages. Available in PDF, EPUB and Kindle. Book excerpt: Crystal defects can no longer be thought of as a scientific curiosity, but must be considered an important aspect of solid-state science. This is largely because many of the more interesting properties of crystalline solids are disproportionately dominated by effects due to a tiny concentration of imperfections in an otherwise perfect lattice. The physics of such lattice defects is not only of significance in a great variety of applications, but is also interesting in its own right. Thus, an extensive science of point defects and dislocations has been constructed during the past two and a half decades. Stimulated by the technological and scientific interest in plasticity, there have appeared in recent years rather a large number of books dealing with dislocations; in the case of point defects, however, only very few broad and extensive treatments have been published. Thus, there are few compre hensive, tutorial sources for the scientist or engineer whose research ac tivities are affected by point defect phenomena, or who might wish to enter the field. It is partially to fill this need that the present treatise aims.