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Caracterisation Et Analyse Du Couplage Substrat Entre Le Tsv Et Les Transistors Mos Dans Les Circuits Integres 3d
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Book Synopsis Caractérisation et analyse du couplage substrat entre le TSV et les transistors MOS dans les circuits intégrés 3D. by : Mélanie Brocard
Download or read book Caractérisation et analyse du couplage substrat entre le TSV et les transistors MOS dans les circuits intégrés 3D. written by Mélanie Brocard and published by . This book was released on 2013 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ces dernières années ont vu l'émergence d'un nouveaux concept dans le domaine de la microélectronique pour répondre aux besoins grandissant en termes de performances et taille des puces et trouver une alternative au loi de Moore et de More than Moore qui atteignent leur limites. Il s'agit de l'intégration tridimensionnelle des circuits intégrés. Cette innovation de rupture repose sur l'empilement de puces aux fonctionnalités différentes et la transmission des signaux au travers des substrats de silicium via des TSV (via traversant le silicium). Très prometteurs en termes de bande passante et de puissance consommée devant les circuits 2D, les circuits intégrés 3D permettent aussi d'avoir des facteurs de forme plus agressifs. Des points clés par rapport aux applications en vogue sur le marché (téléphonie, appareils numériques) Un prototype nommé Wide I/O DRAM réalisé à ST et au Leti a démontré ses performances face à une puce classique POP (Package on Package), avec une bande passante multipliée par huit et une consommation divisée par deux. Cependant, l'intégration de plus en plus poussée, combinée à la montée en fréquence des circuits, soulève les problèmes des diaphonies entre les interconnexions TSV et les circuits intégrés, qui se manifestent par des perturbations dans le substrat. Ces TSV doivent pouvoir véhiculer des signaux agressifs sans perturber le fonctionnement de blocs logiques ou analogiques situés à proximité, sensibles aux perturbations substrat. Cette thèse a pour objectif d'évaluer ces niveaux de diaphonies sur une large gamme de fréquence (jusqu'à 40 GHz) entre le TSV et les transistors et d'apporter des solutions potentielles pour les réduire. Elle repose sur de la conception de structure de test 3D, leur caractérisation, la modélisation des mécanismes de couplage, et des simulations.
Book Synopsis Analyse Et Caractérisation Des Couplages Substrat Et de la Connectique Dans Les Circuits 3D by : Fengyuan Sun
Download or read book Analyse Et Caractérisation Des Couplages Substrat Et de la Connectique Dans Les Circuits 3D written by Fengyuan Sun and published by Editions Publibook. This book was released on 2016 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt: The proposal of doubling the number of transistors on an IC chip (with minimum costs and subtle innovations) every 24 months by Gordon Moore in 1965 (the so-called called Moore's law) has been the most powerful driver for the emphasis of the microelectronics industry in the past 50 years. This law enhances lithography scaling and integration, in 2D, of all functions on a single chip, increasingly through system-on-chip (SOC). On the other hand, the integration of all these functions can be achieved through 3D integrations . Generally speaking, 3D integration consists of 3D IC packaging, 3D IC integration, and 3D Si integration. They are different and mostly the TSV (through-silicon via) separates 3D IC packaging from 3D IC/Si integrations since the latter two uses TSVs, but 3D IC packaging does not. TSV (with a new concept that every chip or interposer could have two surfaces with circuits) is the heart of 3D IC/Si integrations. Continued technology scaling together with the integration of disparate technologies in a single chip means that device performance continues to outstrip interconnect and packaging capabilities, and hence there exist many difficult engineering challenges, most notably in power management, noise isolation, and intra and inter-chip communication. 3D Si integration is the right way to go and compete with Moore's law (more than Moore versus more Moore). However, it is still a long way to go. In this book, Fengyuan SUN proposes new substrate network extraction techniques. Using this latter, the substrate coupling and loss in IC's can be analyzed. He implements some Green/TLM (Transmission Line Matrix) algorithms in MATLAB. It permits to extract impedances between any number of embedded contacts or/and TSVS. He does investigate models of high aspect ratio TSV, on both analytical and numerical methods electromagnetic simulations. This model enables to extract substrate and TSV impedance, S parameters and parasitic elements, considering the variable resistivity of the substrate. It is full compatible with SPICE-like solvers and should allow an investigation in depth of TSV impact on circuit performance.
Book Synopsis Designing TSVs for 3D Integrated Circuits by : Nauman Khan
Download or read book Designing TSVs for 3D Integrated Circuits written by Nauman Khan and published by Springer Science & Business Media. This book was released on 2012-09-23 with total page 82 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explores the challenges and presents best strategies for designing Through-Silicon Vias (TSVs) for 3D integrated circuits. It describes a novel technique to mitigate TSV-induced noise, the GND Plug, which is superior to others adapted from 2-D planar technologies, such as a backside ground plane and traditional substrate contacts. The book also investigates, in the form of a comparative study, the impact of TSV size and granularity, spacing of C4 connectors, off-chip power delivery network, shared and dedicated TSVs, and coaxial TSVs on the quality of power delivery in 3-D ICs. The authors provide detailed best design practices for designing 3-D power delivery networks. Since TSVs occupy silicon real-estate and impact device density, this book provides four iterative algorithms to minimize the number of TSVs in a power delivery network. Unlike other existing methods, these algorithms can be applied in early design stages when only functional block- level behaviors and a floorplan are available. Finally, the authors explore the use of Carbon Nanotubes for power grid design as a futuristic alternative to Copper.
Book Synopsis Caractérisation et modélisation électrique des phénomènes de couplage par les substrats de silicium dans les empilements 3D de circuits intègrés by : Elie Eid
Download or read book Caractérisation et modélisation électrique des phénomènes de couplage par les substrats de silicium dans les empilements 3D de circuits intègrés written by Elie Eid and published by . This book was released on 2012 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Afin d'améliorer les performances électriques dans les circuits intégrés en 3D, une large modélisation électromagnétique et une caractérisation haute fréquence sont requises. Cela a pour but de quantifier et prédire les phénomènes de couplage par le substrat qui peuvent survenir dans ces circuits intégrés. Ces couplages sont principalement dus aux nombreuses interconnexions verticales par unité de volume qui traversent le silicium et que l'on nomme « Through Silicon Vias » (TSV).L'objectif de cette thèse est de proposer des règles d'optimisation des performances, à savoir la minimisation des effets de couplage par les substrats en RF. Pour cela, différentes configurations de structures de test utilisées pour analyser le couplage sont caractérisées.Les caractérisations sont effectuées sur un très large spectre de fréquence. Les paramètres d'analyse sont les épaisseurs du substrat, les architectures des vias traversant (diamètres, densités, types de barrières), ainsi que la nature des matériaux utilisés. Des modèles électriques permettant de prédire les phénomènes de couplage sont extraits. Différents outils pour l'analyse de ces effets, sont développés dans notre laboratoire. Parallèlement un important travail de modélisation 3D est mené de façon à confronter mesure et simulation et valider nos résultats. Des stratégies d'optimisation pour réduire ces phénomènes dans les circuits 3D ont été proposées, ce qui a permis de fournir de riches informations aux designers.
Book Synopsis Arbitrary Modeling of TSVs for 3D Integrated Circuits by : Khaled Salah
Download or read book Arbitrary Modeling of TSVs for 3D Integrated Circuits written by Khaled Salah and published by Springer. This book was released on 2014-08-21 with total page 181 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents a wide-band and technology independent, SPICE-compatible RLC model for through-silicon vias (TSVs) in 3D integrated circuits. This model accounts for a variety of effects, including skin effect, depletion capacitance and nearby contact effects. Readers will benefit from in-depth coverage of concepts and technology such as 3D integration, Macro modeling, dimensional analysis and compact modeling, as well as closed form equations for the through silicon via parasitics. Concepts covered are demonstrated by using TSVs in applications such as a spiral inductor and inductive-based communication system and bandpass filtering.
Book Synopsis Optimisation d'une technologie 3D pour la réalisation de circuits intégrés millimétriques sur substrat de silicium by : Gonzague Six
Download or read book Optimisation d'une technologie 3D pour la réalisation de circuits intégrés millimétriques sur substrat de silicium written by Gonzague Six and published by . This book was released on 2004 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: Les performances hyperfréquences des transistors MOS actuels permettent leur utilisation dans le domaine des ondes millimétriques.Cependant la conception des circuits se heurte au problème posé par les pertes des structures de transmission sur des substrats silicium standard. Dans ce contexte, il est nécessaire de développer des structures de propagation faibles pertes sur silicium. Nous présentons dans ce mémoire le développement d'une technologie 3D, pour réaliser des structures de transmission répondant à ces besoins. La comparaison des différentes structures de propagation développées dans cette étude montre que la technologie TFMS présente les meilleures performances en terme d'atténuation (0,2 dB/mm à 50 GHz), Ces lignes ont été utilisées pour le développement de filtres sélectifs à 50 GHz et 94 GHz (5,8 % de bande passante à 94 GHz). Une approche de type "reprise de process" a été utilisée pour la réalisation de circuits démonstrateurs zzj(amplificateursà 10et 20 GHz).
Book Synopsis MOSFET Models for VLSI Circuit Simulation by : Narain Arora
Download or read book MOSFET Models for VLSI Circuit Simulation written by Narain Arora and published by Springer. This book was released on 1993 with total page 668 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction.
Book Synopsis Matching Properties of Deep Sub-Micron MOS Transistors by : Jeroen A. Croon
Download or read book Matching Properties of Deep Sub-Micron MOS Transistors written by Jeroen A. Croon and published by Springer. This book was released on 2008-11-01 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction: A simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter. The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters. The physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fluctuations in the drain current and transconductance. The impact of process parameters on the matching properties is discussed. The impact of gate line-edge roughness is investigated, which is considered to be one of the roadblocks to the further down-scaling of the MOS transistor. Matching Properties of Deep Sub-Micron MOS Transistors is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET.
Book Synopsis Modèles physiques et analyse du fonctionnement des composants MOS intégrés sur SIMOX by : Thierry Ouisse
Download or read book Modèles physiques et analyse du fonctionnement des composants MOS intégrés sur SIMOX written by Thierry Ouisse and published by . This book was released on 1991 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: CE MEMOIRE EST CONSACRE A LA CARACTERISATION ET LA MODELISATION DES COMPOSANTS MOS DES TECHNOLOGIES SILICIUM SUR ISOLANT (SOI). LE PREMIER CHAPITRE CONTIENT UNE DESCRIPTION GENERALE DES DIFFERENTES TECHNOLOGIES SOI ET RAPPELLE L'INTERET DE TELLES STRUCTURES POUR LA MICROELECTRONIQUE, PUIS NOUS NOUS CONCENTRONS SUR LE MATERIAU SIMOX. NOUS DEVELOPPONS UNE ANALYSE DES EFFETS DE COUPLAGE ELECTRIQUE INTERVENANT ENTRE LES DIVERSES INTERFACES DES TRANSISTORS MOS SOI TOTALEMENT DESERTES. NOUS PROPOSONS ENSUITE UNE APPROCHE ANALYTIQUE ORIGINALE DES PHENOMENES D'HYSTERESIS ET DE CONDUCTANCE/TRANSCONDUCTANCE NEGATIVE APPARAISSANT DANS LES TRANSISTORS MOS SOI PARTIELLEMENT DESERTES. NOUS DEVELOPPONS L'ANALOGIE FORMELLE EXISTANT ENTRE CES EFFETS DE SUBSTRAT FLOTTANT ET UNE TRANSITION DE PHASE. L'APPLICATION DE LA TECHNIQUE DE POMPAGE DE CHARGE AUX STRUCTURES SOI EST DECRITE EN DETAIL, ET LA MISE EN EVIDENCE DE PHENOMENES SPECIFIQUES PERMET DE CLARIFIER LES CONDITIONS OPTIMALES D'UTILISATION. LES DEUX DERNIERS CHAPITRES TRAITENT DES MECANISMES PHYSIQUES DE DEGRADATION DES TRANSISTORS MOS SOI. NOUS ETUDIONS D'ABORD LES EFFETS D'UNE INJECTION DE PORTEURS CHAUDS PUIS CEUX D'UN RAYONNEMENT IONISANT. NOUS METTONS AINSI EN EVIDENCE LA STRUCTURE PHYSIQUE PARTICULIERE DE L'OXYDE ENTERRE OBTENU PAR IMPLANTATION D'OXYGENE
Book Synopsis Conception, réalisation et caractérisation de transistors à effet de champ à hétérojonction sur substrat d'InP pour circuits intégrés coplanaires en bandes V et W by : Virginie Hoel
Download or read book Conception, réalisation et caractérisation de transistors à effet de champ à hétérojonction sur substrat d'InP pour circuits intégrés coplanaires en bandes V et W written by Virginie Hoel and published by . This book was released on 2013 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Les nouvelles applications necessitent des frequences de travail toujours plus elevees. Pour cela, nous souhaitons realiser des circuits amplificateurs faible bruit performants en technologie coplanaire travaillant en gamme d'ondes millimetriques. Le composant cle pour realiser ces circuits est le transistor a effet de champ a heterojonction hemt (high electron mobility transistor). Par consequent, nous developpons dans ce memoire la conception, la realisation et la caracterisation de transistors hemts performants de longueur de grille submicronique en technologie coplanaire. La technologie utilisee pour realiser la grille est de type nitrure. Les transistors sont naturellement passives par une couche de nitrure de silicium de 800a qui protege la zone active. Le pied de grille est insere dans cette couche de dielectrique ce qui permet d'obtenir des grilles robustes avec des longueurs de grille inferieures a 0.1 m. Ce travail, soutenu financierement par la dga, fait l'objet d'une collaboration avec la societe dassault electronique. Nous presentons le principe de fonctionnement et les differentes structures hemts. L'etat de l'art permet de constater la superiorite des heterojonctions alinas/gainas sur substrat inp. Les hemts sont donc realises sur des structures alinas/gainas adaptees en maille sur inp realisees au laboratoire. Nous etudions ensuite la conception des motifs transistors adaptes a la realisation de circuits integres en technologie coplanaire. Puis, nous decrivons les differentes etapes technologiques qu'il a fallu optimiser pour aboutir a la realisation de hemts performants avec un bon rendement de fabrication. Nous etudions les performances hyperfrequences et en bruit des transistors.
Book Synopsis TOF Range-Imaging Cameras by : Fabio Remondino
Download or read book TOF Range-Imaging Cameras written by Fabio Remondino and published by Springer Science & Business Media. This book was released on 2013-04-09 with total page 243 pages. Available in PDF, EPUB and Kindle. Book excerpt: Today the cost of solid-state two-dimensional imagers has dramatically dropped, introducing low cost systems on the market suitable for a variety of applications, including both industrial and consumer products. However, these systems can capture only a two-dimensional projection (2D), or intensity map, of the scene under observation, losing a variable of paramount importance, i.e., the arrival time of the impinging photons. Time-Of-Flight (TOF) Range-Imaging (TOF) is an emerging sensor technology able to deliver, at the same time, depth and intensity maps of the scene under observation. Featuring different sensor resolutions, RIM cameras serve a wide community with a lot of applications like monitoring, architecture, life sciences, robotics, etc. This book will bring together experts from the sensor and metrology side in order to collect the state-of-art researchers in these fields working with RIM cameras. All the aspects in the acquisition and processing chain will be addressed, from recent updates concerning the photo-detectors, to the analysis of the calibration techniques, giving also a perspective onto new applications domains.
Book Synopsis Lightning Protection Guidelines for Aerospace Vehicles by : C. C. Goodloe
Download or read book Lightning Protection Guidelines for Aerospace Vehicles written by C. C. Goodloe and published by . This book was released on 1999 with total page 52 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Challenge of Change by : Rebecca Hampl
Download or read book The Challenge of Change written by Rebecca Hampl and published by Christian Faith Publishing, Inc.. This book was released on 2022-08-01 with total page 533 pages. Available in PDF, EPUB and Kindle. Book excerpt: At the age of twenty-eight, Marty Ellis is still a bachelor who graduated with a major in journalism and a minor in photojournalism. He enjoys his life with various girlfriends while knocking back drinks in bars, going out to dinner, and rolling in the sheets. Yet inevitably, he grows tired of these surface-level-only feelings, shells out his standard goodbye speech, and moves on. However, using only his body and saying sayonara to his love lifeaEUR(tm)s revolving door is not how he wants to live for the rest of his life. How will he ever know what true love feels like if he doesnaEUR(tm)t ascertain how to actually give it? In what way will he begin to be able to discover the whole package that runs beneath the surface of a woman? Unexpectedly, Marty is blindsided when his best friend invites him to leave New Jersey for a weekend trip. Lauren Morris is a beautiful thirty-two-year-old woman who, after graduating at the age of twenty-one with a masteraEUR(tm)s degree in business, took a huge leap of faith and purchased an old farmhouse in Vermont. After ten years of hard work and sweat equity, she has transformed it into a beautiful inn that has become extremely lucrative. But winter is fast approaching, and she is dreading that feeling of loneliness that is connected to darkened afternoons and long, empty nights. Will a man ever enter her life? One that she could love and perhaps be with until death due them part? After meeting Marty, Lauren begins to consider if this man might be the one she has been waiting for her whole life. But then again, she is older than he is; long distance relationships hardly ever work out; and sudden heartbreaking unforeseen events rock both of their worlds. And if they do fall in love, which one of them will have to make the ultimate sacrifice and give up what theyaEUR(tm)ve worked so hard to achieve in order to be together? With so many changes causing so many challenges, will they get through them together, or will one push the other away?
Book Synopsis Advances in Photodiodes by : Gian-Franco Dalla Betta
Download or read book Advances in Photodiodes written by Gian-Franco Dalla Betta and published by BoD – Books on Demand. This book was released on 2011-03-22 with total page 482 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photodiodes, the simplest but most versatile optoelectronic devices, are currently used in a variety of applications, including vision systems, optical interconnects, optical storage systems, photometry, particle physics, medical imaging, etc. Advances in Photodiodes addresses the state-of-the-art, latest developments and new trends in the field, covering theoretical aspects, design and simulation issues, processing techniques, experimental results, and applications. Written by internationally renowned experts, with contributions from universities, research institutes and industries, the book is a valuable reference tool for students, scientists, engineers, and researchers.
Book Synopsis Handbook of Aerospace Electromagnetic Compatibility by : Dr. Reinaldo J. Perez
Download or read book Handbook of Aerospace Electromagnetic Compatibility written by Dr. Reinaldo J. Perez and published by John Wiley & Sons. This book was released on 2018-11-30 with total page 768 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive resource that explores electromagnetic compatibility (EMC) for aerospace systems Handbook of Aerospace Electromagnetic Compatibility is a groundbreaking book on EMC for aerospace systems that addresses both aircraft and space vehicles. With contributions from an international panel of aerospace EMC experts, this important text deals with the testing of spacecraft components and subsystems, analysis of crosstalk and field coupling, aircraft communication systems, and much more. The text also includes information on lightning effects and testing, as well as guidance on design principles and techniques for lightning protection. The book offers an introduction to E3 models and techniques in aerospace systems and explores EMP effects on and technology for aerospace systems. Filled with the most up-to-date information, illustrative examples, descriptive figures, and helpful scenarios, Handbook of Aerospace Electromagnetic Compatibility is designed to be a practical information source. This vital guide to electromagnetic compatibility: • Provides information on a range of topics including grounding, coupling, test procedures, standards, and requirements • Offers discussions on standards for aerospace applications • Addresses aerospace EMC through the use of testing and theoretical approaches Written for EMC engineers and practitioners, Handbook of Aerospace Electromagnetic Compatibility is a critical text for understanding EMC for aerospace systems.
Book Synopsis Single-Photon Generation and Detection by :
Download or read book Single-Photon Generation and Detection written by and published by Academic Press. This book was released on 2013-11-29 with total page 593 pages. Available in PDF, EPUB and Kindle. Book excerpt: Single-photon generation and detection is at the forefront of modern optical physics research. This book is intended to provide a comprehensive overview of the current status of single-photon techniques and research methods in the spectral region from the visible to the infrared. The use of single photons, produced on demand with well-defined quantum properties, offers an unprecedented set of capabilities that are central to the new area of quantum information and are of revolutionary importance in areas that range from the traditional, such as high sensitivity detection for astronomy, remote sensing, and medical diagnostics, to the exotic, such as secretive surveillance and very long communication links for data transmission on interplanetary missions. The goal of this volume is to provide researchers with a comprehensive overview of the technology and techniques that are available to enable them to better design an experimental plan for its intended purpose. The book will be broken into chapters focused specifically on the development and capabilities of the available detectors and sources to allow a comparative understanding to be developed by the reader along with and idea of how the field is progressing and what can be expected in the near future. Along with this technology, we will include chapters devoted to the applications of this technology, which is in fact much of the driver for its development. This is set to become the go-to reference for this field. Covers all the basic aspects needed to perform single-photon experiments and serves as the first reference to any newcomer who would like to produce an experimental design that incorporates the latest techniques Provides a comprehensive overview of the current status of single-photon techniques and research methods in the spectral region from the visible to the infrared, thus giving broad background that should enable newcomers to the field to make rapid progress in gaining proficiency Written by leading experts in the field, among which, the leading Editor is recognized as having laid down the roadmap, thus providing the reader with an authenticated and reliable source
Book Synopsis The Political Economy of Populism by : Petar Stankov
Download or read book The Political Economy of Populism written by Petar Stankov and published by Routledge. This book was released on 2020-07-21 with total page 94 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Political Economy of Populism explores the interplay between identity, the economy and inequality to explain the dynamics of populist votes since the beginning of the 20th century. The book discusses the political and economic implications of populist governance using data on populist incumbencies and linking it to historical data on the macro economy and democracy. Chapters draw from the most recent political science, economics and other social science literature, as well as historical data, to explain the long-term causes and consequences of populism. Populism emerges and gains traction when political entrepreneurs exploit underlying identity conflicts for political gains. As the distributional consequences of both economic distress and economic growth typically favor the elite over the poor and the lower middle class, economic shocks usually sharpen the underlying identity conflicts between the groups. The book provides evidence of significant differences in the ways fiscal and monetary policies are conducted by incumbent populists in Latin America, Europe and the OECD. The work concludes by suggesting avenues through which a 21st century social consensus can be built, so that our society can avoid repeating the mistakes that led to wars and failed economic experiments in the 20th century. The Political Economy of Populism marks a significant contribution to the study of populism and is suited to students and scholars across the social sciences, including economics, political science and sociology.
