An Annealing Study of Neutron Transmutation Doped Silicon: Boron

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ISBN 13 :
Total Pages : 136 pages
Book Rating : 4.:/5 (957 download)

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Book Synopsis An Annealing Study of Neutron Transmutation Doped Silicon: Boron by : Jeffrey B. Watson

Download or read book An Annealing Study of Neutron Transmutation Doped Silicon: Boron written by Jeffrey B. Watson and published by . This book was released on 1982 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Neutron Transmutation Doping of Semiconductor Materials

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Publisher : Springer Science & Business Media
ISBN 13 : 1461326958
Total Pages : 337 pages
Book Rating : 4.4/5 (613 download)

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Book Synopsis Neutron Transmutation Doping of Semiconductor Materials by : Robert D. Larrabee

Download or read book Neutron Transmutation Doping of Semiconductor Materials written by Robert D. Larrabee and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: viii The growing use of NTD silicon outside the U. S. A. motivated an interest in having the next NTD conference in Europe. Therefore, the Third International Conference on Neutron Transmutation-Doped Silicon was organized by Jens Guldberg and held in Copenhagen, Denmark on August 27-29, 1980. The papers presented at this conference reviewed the developments which occurred during the t'A'O years since the previous conference and included papers on irradiation technology, radiation-induced defects, characteriza tion of NTD silicon, and the use of NTD silicon for device appli cations. The proceedings of this conference were edited by Jens Guldberg and published by Plenum Press in 1981. Interest in, and commercial use of, NTD silicon continued to grow after the Third NTD Conference, and research into neutron trans mutation doping of nonsilicon semiconductors had begun to accel erate. The Fourth International Transmutation Doping Conference reported in this volume includes invited papers summarizing the present and anticipated future of NTD silicon, the processing and characterization of NTD silicon, and the use of NTD silicon in semiconductor power devices. In addition, four papers were pre sented on NTD of nonsilicon semiconductors, five papers on irra diation technology, three papers on practical utilization of NTD silicon, four papers on the characterization of NTD silicon, and five papers on neutron damage and annealing. These papers indi cate that irradiation technology for NTD silicon and its use by the power-device industry are approaching maturity.

Neutron Transmutation Doping in Semiconductors

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Publisher : Springer Science & Business Media
ISBN 13 : 1468482491
Total Pages : 368 pages
Book Rating : 4.4/5 (684 download)

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Book Synopsis Neutron Transmutation Doping in Semiconductors by : J. Meese

Download or read book Neutron Transmutation Doping in Semiconductors written by J. Meese and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the invited and contributed papers presented at the Second International Conference on Neutron Transmutation Doping in Semiconductors held April 23-26, 1978 at the University of Missouri-Columbia. The first "testing of the waters" symposium on this subject was organized by John Cleland and Dick Wood of the Solid-State Division of Oak Ridge National Laboratory in April of 1976, just one year after NTD-silicon appeared on the marketplace. Since this first meeting, NTD-silicon has become established as the starting material for the power device industry and reactor irradiations are now measured in tens of tons of material per annum making NTD processing the largest radiation effects technology in the semiconductor industry. Since the first conference at Oak Ridge, new applications and irradiation techniques have developed. Interest in a second con ference and in publishing the proceedings has been extremely high. The second conference at the University of Missouri was attended by 114 persons. Approximately 20% of the attendees came from countries outside the U.S.A. making the conference truly interna tional in scope.

An Infrared Absorption Study of Neutron Transmutation Doped Silicon: Boron

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Publisher :
ISBN 13 :
Total Pages : 150 pages
Book Rating : 4.:/5 (142 download)

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Book Synopsis An Infrared Absorption Study of Neutron Transmutation Doped Silicon: Boron by : Herman Trivilino

Download or read book An Infrared Absorption Study of Neutron Transmutation Doped Silicon: Boron written by Herman Trivilino and published by . This book was released on 1985 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Electrical Property Studies of Neutron-transmutation-doped Silicon

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (727 download)

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Book Synopsis Electrical Property Studies of Neutron-transmutation-doped Silicon by :

Download or read book Electrical Property Studies of Neutron-transmutation-doped Silicon written by and published by . This book was released on 1978 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Results of studies of electrical properties of neutron-transmutation-doped (NTD) silicon are presented. Annealing requirements to remove lattice damage were obtained. The electrical role of clustered oxygen and defect-oxygen complex was investigated. An NTD epitaxial layer on a heavily doped n- or p- type substrate can be produced. There is no evident interaction between lithium introduced by diffusion and phosphorous 31 introduced by irradiation. There may be some type of pairing reaction between lithium 7 introduced by boron 10 fission and any remaining boron. (FS).

An Annealing Study of the Lattice Parameter and the Anomalous X-ray Transmission of Neutron Irradiated Boron Doped Silicon

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ISBN 13 :
Total Pages : 62 pages
Book Rating : 4.:/5 (873 download)

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Book Synopsis An Annealing Study of the Lattice Parameter and the Anomalous X-ray Transmission of Neutron Irradiated Boron Doped Silicon by : James W. Thomas

Download or read book An Annealing Study of the Lattice Parameter and the Anomalous X-ray Transmission of Neutron Irradiated Boron Doped Silicon written by James W. Thomas and published by . This book was released on 1980 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt:

An Infrared Annealing Study of Float Zone Neutron Transmutation Doped Silicon

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Publisher :
ISBN 13 :
Total Pages : 106 pages
Book Rating : 4.:/5 (211 download)

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Book Synopsis An Infrared Annealing Study of Float Zone Neutron Transmutation Doped Silicon by : Tianming Philip Roan

Download or read book An Infrared Annealing Study of Float Zone Neutron Transmutation Doped Silicon written by Tianming Philip Roan and published by . This book was released on 1988 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Rapid Thermal Annealing of Neutron Transmutation Doped Silicon

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ISBN 13 : 9780642598691
Total Pages : 8 pages
Book Rating : 4.5/5 (986 download)

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Book Synopsis Rapid Thermal Annealing of Neutron Transmutation Doped Silicon by : Ewan Macelwee Lawson

Download or read book Rapid Thermal Annealing of Neutron Transmutation Doped Silicon written by Ewan Macelwee Lawson and published by . This book was released on 1987 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Neutron-Transmutation-Doped Silicon

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Publisher : Springer Science & Business Media
ISBN 13 : 1461332613
Total Pages : 493 pages
Book Rating : 4.4/5 (613 download)

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Book Synopsis Neutron-Transmutation-Doped Silicon by : Jens Guldberg

Download or read book Neutron-Transmutation-Doped Silicon written by Jens Guldberg and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 493 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the papers presented at the Third International Conference on Neutron Transmutation Doping of Silicon held in Copenhagen on August 27-29, 1980. The first symposium associated with neutron transmutation doping technology as such was arranged in 1976 at Oak Ridge National Laboratory by John Cleland. At this time it had become clear that the technology could be implemented on a commercial scale and that several types of power devices in the electronic industry would benefit from employing neutron transmutation doped silicon in the fabrication proces's'. Two years later the Second International Conference on Neutron Transmutation Doping of Semiconductors was arranged at the University of Missouri, Columbia, by Jon Meese. On this occasion the various aspects of silicon fabrication were reviewed, including irradiation control, radiation induced defects, device optimization, and possible benefits of irradiating other semiconductor compounds. In view of the now wide spread acceptance of neutron doped silicon in the power device industry the present conference was largely directed towards the current status of transmutation doping of silicon. Accordingly, the scope of the three day confe rence was to review developments in the technology which had occurred during the two years which had passed since the previous conference. In addition, brief accounts were given with respect to other semiconducting compounds and emerging irradiation techniques which may impact on device design principles in the future.

Neutron-Transmutation-Doped Silicon

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ISBN 13 : 9781461332626
Total Pages : 520 pages
Book Rating : 4.3/5 (326 download)

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Book Synopsis Neutron-Transmutation-Doped Silicon by : Jens Guldberg

Download or read book Neutron-Transmutation-Doped Silicon written by Jens Guldberg and published by . This book was released on 2014-01-15 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Neutron transmutation doped silicon

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ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (141 download)

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Book Synopsis Neutron transmutation doped silicon by : J. Evans

Download or read book Neutron transmutation doped silicon written by J. Evans and published by . This book was released on 1990 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

ERDA Energy Research Abstracts

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ISBN 13 :
Total Pages : 1314 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis ERDA Energy Research Abstracts by : United States. Energy Research and Development Administration

Download or read book ERDA Energy Research Abstracts written by United States. Energy Research and Development Administration and published by . This book was released on 1976 with total page 1314 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Energy Research Abstracts

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ISBN 13 :
Total Pages : 724 pages
Book Rating : 4.:/5 (3 download)

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Book Synopsis Energy Research Abstracts by :

Download or read book Energy Research Abstracts written by and published by . This book was released on 1993 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiannual, with semiannual and annual indexes. References to all scientific and technical literature coming from DOE, its laboratories, energy centers, and contractors. Includes all works deriving from DOE, other related government-sponsored information, and foreign nonnuclear information. Arranged under 39 categories, e.g., Biomedical sciences, basic studies; Biomedical sciences, applied studies; Health and safety; and Fusion energy. Entry gives bibliographical information and abstract. Corporate, author, subject, report number indexes.

High Purity Silicon 9

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Publisher : The Electrochemical Society
ISBN 13 : 1566775043
Total Pages : 504 pages
Book Rating : 4.5/5 (667 download)

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Book Synopsis High Purity Silicon 9 by : Cor L. Claeys

Download or read book High Purity Silicon 9 written by Cor L. Claeys and published by The Electrochemical Society. This book was released on 2006 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue discusses the latest developments in the growth, characterization, device processing and applications of high-purity silicon in either bulk or epitaxial form. Information is given on the control and prevention of impurity incorporation, characterization and detection of defects and impurity states. Device and circuit aspects are also covered. Advanced substrates such as SOI, strained Si and germanium-on-insulator are discussed.

NBS Special Publication

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ISBN 13 :
Total Pages : 1538 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis NBS Special Publication by :

Download or read book NBS Special Publication written by and published by . This book was released on 1979 with total page 1538 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Government Reports Annual Index

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ISBN 13 :
Total Pages : 948 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Government Reports Annual Index by :

Download or read book Government Reports Annual Index written by and published by . This book was released on 1979 with total page 948 pages. Available in PDF, EPUB and Kindle. Book excerpt: Sections 1-2. Keyword Index.--Section 3. Personal author index.--Section 4. Corporate author index.-- Section 5. Contract/grant number index, NTIS order/report number index 1-E.--Section 6. NTIS order/report number index F-Z.

Inventory of advanced energy technologies and energy conservation research and development, 1976-1978

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ISBN 13 :
Total Pages : 2238 pages
Book Rating : 4.3/5 (121 download)

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Book Synopsis Inventory of advanced energy technologies and energy conservation research and development, 1976-1978 by : Oak Ridge National Laboratory

Download or read book Inventory of advanced energy technologies and energy conservation research and development, 1976-1978 written by Oak Ridge National Laboratory and published by . This book was released on 1979 with total page 2238 pages. Available in PDF, EPUB and Kindle. Book excerpt: