Wide Bandgap Semiconductor Materials And Devices 21

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Wide Bandgap Semiconductor Power Devices

Author : B. Jayant Baliga
Publisher : Woodhead Publishing
ISBN 13 : 0081023073
Total Pages : 420 pages
Book Rating : 4.0/5 (81 download)

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Book Synopsis Wide Bandgap Semiconductor Power Devices by : B. Jayant Baliga

Download or read book Wide Bandgap Semiconductor Power Devices written by B. Jayant Baliga and published by Woodhead Publishing. This book was released on 2018-10-17 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed. - Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications - Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability - Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact

Wide Bandgap Semiconductor-based Electronics

Author : Fan Ren
Publisher :
ISBN 13 : 9780750325165
Total Pages : 0 pages
Book Rating : 4.3/5 (251 download)

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Book Synopsis Wide Bandgap Semiconductor-based Electronics by : Fan Ren

Download or read book Wide Bandgap Semiconductor-based Electronics written by Fan Ren and published by . This book was released on 2020 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Advances in wide bandgap semiconductor materials are enabling the development of a new generation of power semiconductor devices that far exceed the performance of silicon-based devices. These technologies offer potential breakthrough performance for a wide range of applications, including high-power and RF electronics, deep-UV optoelectronics, quantum information and extreme-environment applications. This reference text provides comprehensive coverage of the challenges and latest research in wide and ultra-wide bandgap semiconductors. Leading researchers from around the world provide reviews on the latest development of materials and devices in these systems. The book is an essential reference for researchers and practitioners in the field of wide bandgap semiconductors and power electronics, and valuable supplementary reading for advanced courses in these areas." -- Prové de l'editor.

Wide Bandgap Semiconductors

Author : Kiyoshi Takahashi
Publisher : Springer Science & Business Media
ISBN 13 : 3540472355
Total Pages : 481 pages
Book Rating : 4.5/5 (44 download)

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Book Synopsis Wide Bandgap Semiconductors by : Kiyoshi Takahashi

Download or read book Wide Bandgap Semiconductors written by Kiyoshi Takahashi and published by Springer Science & Business Media. This book was released on 2007-04-12 with total page 481 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book offers a comprehensive overview of the development, current state, and future prospects of wide bandgap semiconductor materials and related optoelectronics devices. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap semiconductors and related optoelectronics devices.

Gallium Oxide

Author : Stephen Pearton
Publisher : Elsevier
ISBN 13 : 0128145226
Total Pages : 510 pages
Book Rating : 4.1/5 (281 download)

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Book Synopsis Gallium Oxide by : Stephen Pearton

Download or read book Gallium Oxide written by Stephen Pearton and published by Elsevier. This book was released on 2018-10-15 with total page 510 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Oxide: Technology, Devices and Applications discusses the wide bandgap semiconductor and its promising applications in power electronics, solar blind UV detectors, and in extreme environment electronics. It also covers the fundamental science of gallium oxide, providing an in-depth look at the most relevant properties of this materials system. High quality bulk Ga2O3 is now commercially available from several sources and n-type epi structures are also coming onto the market. As researchers are focused on creating new complex structures, the book addresses the latest processing and synthesis methods. Chapters are designed to give readers a complete picture of the Ga2O3 field and the area of devices based on Ga2O3, from their theoretical simulation, to fabrication and application. - Provides an overview of the advantages of the gallium oxide materials system, the advances in in bulk and epitaxial crystal growth, device design and processing - Reviews the most relevant applications, including photodetectors, FETs, FINFETs, MOSFETs, sensors, catalytic applications, and more - Addresses materials properties, including structural, mechanical, electrical, optical, surface and contact

Nitride Wide Bandgap Semiconductor Material and Electronic Devices

Author : Yue Hao
Publisher : CRC Press
ISBN 13 : 149874513X
Total Pages : 389 pages
Book Rating : 4.4/5 (987 download)

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Book Synopsis Nitride Wide Bandgap Semiconductor Material and Electronic Devices by : Yue Hao

Download or read book Nitride Wide Bandgap Semiconductor Material and Electronic Devices written by Yue Hao and published by CRC Press. This book was released on 2016-11-03 with total page 389 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

GaN-based Materials and Devices

Author : Michael Shur
Publisher : World Scientific
ISBN 13 : 9789812562364
Total Pages : 310 pages
Book Rating : 4.5/5 (623 download)

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Book Synopsis GaN-based Materials and Devices by : Michael Shur

Download or read book GaN-based Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2004 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.

Wide Bandgap Semiconductor Materials and Devices 19

Author : J. Hite
Publisher : The Electrochemical Society
ISBN 13 : 1607688352
Total Pages : 130 pages
Book Rating : 4.6/5 (76 download)

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Book Synopsis Wide Bandgap Semiconductor Materials and Devices 19 by : J. Hite

Download or read book Wide Bandgap Semiconductor Materials and Devices 19 written by J. Hite and published by The Electrochemical Society. This book was released on 2018-05-04 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Advanced Semiconducting Materials and Devices

Author : K.M. Gupta
Publisher : Springer
ISBN 13 : 3319197584
Total Pages : 595 pages
Book Rating : 4.3/5 (191 download)

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Book Synopsis Advanced Semiconducting Materials and Devices by : K.M. Gupta

Download or read book Advanced Semiconducting Materials and Devices written by K.M. Gupta and published by Springer. This book was released on 2015-08-20 with total page 595 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the latest developments in semiconducting materials and devices, providing up-to-date information on the science, processes, and applications in the field. A wide range of topics are covered, including optoelectronic devices, metal–semiconductor junctions, heterojunctions, MISFETs, LEDs, semiconductor lasers, photodiodes, switching diodes, tunnel diodes, Gunn diodes, solar cells, varactor diodes, IMPATT diodes, and advanced semiconductors. Detailed attention is paid to advanced and futuristic materials. In addition, clear explanations are provided of, for example, electron theories, high-field effects, the Hall effect, transit-time effects, drift and diffusion, breakdown mechanisms, equilibrium and transient conditions, switching, and biasing. The book is designed to meet the needs of undergraduate engineering students and will also be very useful for postgraduate students; it will assist in preparation for examinations at colleges and universities and for other examinations in engineering. Practice questions are therefore presented in both essay and multiple choice format, and many solved examples and unsolved problems are included.

Wide Bandgap Semiconductor Materials and Devices 12

Author : J. A. Bardwell
Publisher : The Electrochemical Society
ISBN 13 : 1566778670
Total Pages : 222 pages
Book Rating : 4.5/5 (667 download)

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Book Synopsis Wide Bandgap Semiconductor Materials and Devices 12 by : J. A. Bardwell

Download or read book Wide Bandgap Semiconductor Materials and Devices 12 written by J. A. Bardwell and published by The Electrochemical Society. This book was released on 2011-04 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions focuses on issues pertinent to development of wide-bandgap semiconductor materials and devices, encompassing inorganic wide-bandgap semiconductors: III-nitrides (e. g. gallium nitride), II-oxides, SiC, diamond, II-VI, and also emerging materials such as organic-inorganic nanoscale structures.

Wide Bandgap Semiconductor Materials and Devices 16

Author : S. Jang
Publisher : The Electrochemical Society
ISBN 13 : 1607685914
Total Pages : 347 pages
Book Rating : 4.6/5 (76 download)

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Book Synopsis Wide Bandgap Semiconductor Materials and Devices 16 by : S. Jang

Download or read book Wide Bandgap Semiconductor Materials and Devices 16 written by S. Jang and published by The Electrochemical Society. This book was released on 2015 with total page 347 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Semiconductor Material and Device Characterization

Author : Dieter K. Schroder
Publisher : John Wiley & Sons
ISBN 13 : 0471739065
Total Pages : 800 pages
Book Rating : 4.4/5 (717 download)

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Book Synopsis Semiconductor Material and Device Characterization by : Dieter K. Schroder

Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

Wide Energy Bandgap Electronic Devices

Author : Fan Ren
Publisher : World Scientific
ISBN 13 : 9812382461
Total Pages : 526 pages
Book Rating : 4.8/5 (123 download)

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Book Synopsis Wide Energy Bandgap Electronic Devices by : Fan Ren

Download or read book Wide Energy Bandgap Electronic Devices written by Fan Ren and published by World Scientific. This book was released on 2003 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents state-of-the-art GaN and SiC electronic devices, as well as detailed applications of these devices to power conditioning, r. f. base station infrastructure and high temperature electronics.

Materials for High-Temperature Semiconductor Devices

Author : National Research Council
Publisher : National Academies Press
ISBN 13 : 0309053358
Total Pages : 136 pages
Book Rating : 4.3/5 (9 download)

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Book Synopsis Materials for High-Temperature Semiconductor Devices by : National Research Council

Download or read book Materials for High-Temperature Semiconductor Devices written by National Research Council and published by National Academies Press. This book was released on 1995-10-14 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt: Major benefits to system architecture would result if cooling systems for components could be eliminated without compromising performance. This book surveys the state-of-the-art for the three major wide bandgap materials (silicon carbide, nitrides, and diamond), assesses the national and international efforts to develop these materials, identifies the technical barriers to their development and manufacture, determines the criteria for successfully packaging and integrating these devices into existing systems, and recommends future research priorities.

Silicon Carbide Power Devices

Author : B. Jayant Baliga
Publisher : World Scientific
ISBN 13 : 9812774521
Total Pages : 526 pages
Book Rating : 4.8/5 (127 download)

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Book Synopsis Silicon Carbide Power Devices by : B. Jayant Baliga

Download or read book Silicon Carbide Power Devices written by B. Jayant Baliga and published by World Scientific. This book was released on 2006-01-05 with total page 526 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices. Sample Chapter(s). Chapter 1: Introduction (72 KB). Contents: Material Properties and Technology; Breakdown Voltage; PiN Rectifiers; Schottky Rectifiers; Shielded Schottky Rectifiers; Metal-Semiconductor Field Effect Transistors; The Baliga-Pair Configuration; Planar Power MOSFETs; Shielded Planar MOSFETs; Trench-Gate Power MOSFETs; Shielded Trendch-Gate MOSFETs; Charge Coupled Structures; Integral Diodes; Lateral High Voltage FETs; Synopsis. Readership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices.

Ultra-wide Bandgap Semiconductor Materials

Author : Meiyong Liao
Publisher : Elsevier
ISBN 13 : 0128172568
Total Pages : 506 pages
Book Rating : 4.1/5 (281 download)

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Book Synopsis Ultra-wide Bandgap Semiconductor Materials by : Meiyong Liao

Download or read book Ultra-wide Bandgap Semiconductor Materials written by Meiyong Liao and published by Elsevier. This book was released on 2019-06-18 with total page 506 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride. - Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, ß-Ga2O3, boron nitrides, and low-dimensional materials - Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance - Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics

Characterization of Wide Bandgap Power Semiconductor Devices

Author : Fei Wang
Publisher : Institution of Engineering and Technology
ISBN 13 : 1785614916
Total Pages : 348 pages
Book Rating : 4.7/5 (856 download)

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Book Synopsis Characterization of Wide Bandgap Power Semiconductor Devices by : Fei Wang

Download or read book Characterization of Wide Bandgap Power Semiconductor Devices written by Fei Wang and published by Institution of Engineering and Technology. This book was released on 2018-09-05 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: At the heart of modern power electronics converters are power semiconductor switching devices. The emergence of wide bandgap (WBG) semiconductor devices, including silicon carbide and gallium nitride, promises power electronics converters with higher efficiency, smaller size, lighter weight, and lower cost than converters using the established silicon-based devices. However, WBG devices pose new challenges for converter design and require more careful characterization, in particular due to their fast switching speed and more stringent need for protection.

Gallium Nitride Power Devices

Author : Hongyu Yu
Publisher : CRC Press
ISBN 13 : 1351767607
Total Pages : 301 pages
Book Rating : 4.3/5 (517 download)

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Book Synopsis Gallium Nitride Power Devices by : Hongyu Yu

Download or read book Gallium Nitride Power Devices written by Hongyu Yu and published by CRC Press. This book was released on 2017-07-06 with total page 301 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.