Ultra-deep Reactive Ion Etching for Silicon Wankel Internal Combusion Engines

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ISBN 13 :
Total Pages : 296 pages
Book Rating : 4.:/5 (34 download)

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Book Synopsis Ultra-deep Reactive Ion Etching for Silicon Wankel Internal Combusion Engines by : Aaron Jay Knobloch

Download or read book Ultra-deep Reactive Ion Etching for Silicon Wankel Internal Combusion Engines written by Aaron Jay Knobloch and published by . This book was released on 2003 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Optimized Fabrication of Ultra-deep Reactive Ion Etched Silicon Components for the MEMS Rotary Engine Power System

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ISBN 13 :
Total Pages : 196 pages
Book Rating : 4.:/5 (35 download)

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Book Synopsis Optimized Fabrication of Ultra-deep Reactive Ion Etched Silicon Components for the MEMS Rotary Engine Power System by : Fabian Chavez Martinez

Download or read book Optimized Fabrication of Ultra-deep Reactive Ion Etched Silicon Components for the MEMS Rotary Engine Power System written by Fabian Chavez Martinez and published by . This book was released on 2005 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Microelectromechanical Systems

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ISBN 13 :
Total Pages : 530 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Microelectromechanical Systems by :

Download or read book Microelectromechanical Systems written by and published by . This book was released on 2004 with total page 530 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Dry Etching for Microelectronics

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Publisher : North-Holland
ISBN 13 :
Total Pages : 320 pages
Book Rating : 4.:/5 (45 download)

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Book Synopsis Dry Etching for Microelectronics by : Ronald A. Powell

Download or read book Dry Etching for Microelectronics written by Ronald A. Powell and published by North-Holland. This book was released on 1984 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume collects together for the first time a series of in-depth, critical reviews of important topics in dry etching, such as dry processing of III-V compound semiconductors, dry etching of refractory metal silicides and dry etching aluminium and aluminium alloys. This topical format provides the reader with more specialised information and references than found in a general review article. In addition, it presents a broad perspective which would otherwise have to be gained by reading a large number of individual research papers. An additional important and unique feature of this book is the inclusion of an extensive literature review of dry processing, compiled by search of computerized data bases. A subject index allows ready access to the key points raised in each of the chapters.

Cryogenic Deep Reactive Ion Etching and Bonding of Through Silicon Wafer Vias

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ISBN 13 :
Total Pages : 89 pages
Book Rating : 4.:/5 (81 download)

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Book Synopsis Cryogenic Deep Reactive Ion Etching and Bonding of Through Silicon Wafer Vias by : Ankita Verma

Download or read book Cryogenic Deep Reactive Ion Etching and Bonding of Through Silicon Wafer Vias written by Ankita Verma and published by . This book was released on 2012 with total page 89 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Etching Radical Controlled Gas Chopped Deep Reactive Ion Etching

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (962 download)

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Book Synopsis Etching Radical Controlled Gas Chopped Deep Reactive Ion Etching by :

Download or read book Etching Radical Controlled Gas Chopped Deep Reactive Ion Etching written by and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A method for silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping has been developed capable of producing essentially scallop-free, smooth, sidewall surfaces. The method uses precisely controlled, alternated (or chopped) gas flow of the etching and deposition gas precursors to produce a controllable sidewall passivation capable of high anisotropy. The dynamic control of sidewall passivation is achieved by carefully controlling fluorine radical presence with moderator gasses, such as CH.sub. 4 and controlling the passivation rate and stoichiometry using a CF.sub. 2 source. In this manner, sidewall polymer deposition thicknesses are very well controlled, reducing sidewall ripples to very small levels. By combining inductively coupled plasmas with controlled fluorocarbon chemistry, good control of vertical structures with very low sidewall roughness may be produced. Results show silicon features with an aspect ratio of 20:1 for 10 nm features with applicability to nano-applications in the sub-50 nm regime. By comparison, previous traditional gas chopping techniques have produced rippled or scalloped sidewalls in a range of 50 to 100 nm roughness.

Electromagnetic Generators for Portable Power Applications

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ISBN 13 :
Total Pages : 390 pages
Book Rating : 4.:/5 (35 download)

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Book Synopsis Electromagnetic Generators for Portable Power Applications by : Matthew Kurt Senesky

Download or read book Electromagnetic Generators for Portable Power Applications written by Matthew Kurt Senesky and published by . This book was released on 2005 with total page 390 pages. Available in PDF, EPUB and Kindle. Book excerpt:

High Aspect-ratio Nanoscale Etching in Silicon Using Electron Beam Lithography and Deep Reactive Ion Etching (DRIE) Technique

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (713 download)

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Book Synopsis High Aspect-ratio Nanoscale Etching in Silicon Using Electron Beam Lithography and Deep Reactive Ion Etching (DRIE) Technique by : John Kangchun Perng

Download or read book High Aspect-ratio Nanoscale Etching in Silicon Using Electron Beam Lithography and Deep Reactive Ion Etching (DRIE) Technique written by John Kangchun Perng and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis reports the characterization and development of nanolithography using Electron Beam Lithography system and nanoscale plasma etching. The standard Bosch process and a modified three-pulse Bosch process were developed in STS ICP and Plasma ICP system separately. The limit of the Bosch process at the nanoscale regime was investigated and documented. Furthermore, the effect of different control parameters on the process were studied and summarized in this report. 28nm-wide trench with aspect-ratio of 25 (smallest trench), and 50nm-wide trench with aspect ratio of 37 (highest aspect-ratio) have been demonstrated using the modified three-pulse process. Capacitive resonators, SiBAR and IBAR devices have been fabricated using the process developed in this work. IBARs (15MHz) with ultra-high Q (210,000) have been reported.

Plasma Etching and Reactive Ion Etching

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ISBN 13 :
Total Pages : 104 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Plasma Etching and Reactive Ion Etching by : J. W. Coburn

Download or read book Plasma Etching and Reactive Ion Etching written by J. W. Coburn and published by . This book was released on 1982 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Critical Aspect Ratio Dependence in Deep Reactive Ion Etching of Silicon

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ISBN 13 :
Total Pages : 196 pages
Book Rating : 4.:/5 (53 download)

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Book Synopsis Critical Aspect Ratio Dependence in Deep Reactive Ion Etching of Silicon by : Junghoon Yeom

Download or read book Critical Aspect Ratio Dependence in Deep Reactive Ion Etching of Silicon written by Junghoon Yeom and published by . This book was released on 2003 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Dissertation Abstracts International

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ISBN 13 :
Total Pages : 790 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Dissertation Abstracts International by :

Download or read book Dissertation Abstracts International written by and published by . This book was released on 2006 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Design, Fabrication, and Characterization of a Compact Deep Reactive Ion Etching System for MEMS Processing

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ISBN 13 :
Total Pages : 126 pages
Book Rating : 4.:/5 (9 download)

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Book Synopsis Design, Fabrication, and Characterization of a Compact Deep Reactive Ion Etching System for MEMS Processing by : Parker Andrew Gould

Download or read book Design, Fabrication, and Characterization of a Compact Deep Reactive Ion Etching System for MEMS Processing written by Parker Andrew Gould and published by . This book was released on 2014 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt: A general rule of thumb for new semiconductor fabrication facilities (Fabs) is that revenues from the first year of production must match the capital cost of building the fab itself. With modem Fabs routinely exceeding $1 billion to build, this rule serves as a significant barrier to entry for groups seeking to commercialize new semiconductor devices aimed at smaller market segments which require a dedicated process. To eliminate this cost barrier we are working to create a small-scale production suite of tools that will processes small (~1") substrates and cost less than $1 million. By shrinking the size of the substrate, substantial savings can be realized in material usage, energy consumption, and, most importantly, capital costs. In this thesis, we present the development of the first tool in this suite of small substrate processing equipment, a deep reactive ion etcher (DRIE). DRIE tools are used to create highly anisotropic, high aspect-ratio trenches in silicon-a crucial element in the production of many microelectromechanical systems (MEMS) devices. We are targeting the Bosch Process method of DRIE, which is a time multiplexed process that rapidly alternates between an SF6-based reactive ion etching (RIE) step that isotropically etches silicon and a C4F8-based plasma-enhanced chemical vapor deposition (PECVD) step that passivates the sidewalls of the etched features. The rapid alternation between the RIE and PECVD steps allows highly anisotropic features to be etched in silicon. The DRIE system developed in this thesis is roughly the size of a microwave oven and costs just a fraction of commercial etching systems. The test results presented herein characterize the stability and operating limits of the vacuum and plasma generation systems, and demonstrate the system's raw etching capability using a mix of SF6 and O2 process gases. Etch rates exceeding 4 [mu]m/min with control of the etched profile are reported, with models fitted to the data indicating increased capabilities with optimized process conditions.

The Effects of Reactive Ion Etching on the Electronic Properties of Silicon Surfaces and Power Devices

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ISBN 13 :
Total Pages : 424 pages
Book Rating : 4.:/5 (267 download)

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Book Synopsis The Effects of Reactive Ion Etching on the Electronic Properties of Silicon Surfaces and Power Devices by : Tsengyou Syau

Download or read book The Effects of Reactive Ion Etching on the Electronic Properties of Silicon Surfaces and Power Devices written by Tsengyou Syau and published by . This book was released on 1992 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Reactive Ion Etching of Silicon Carbide Using CF4/O2

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ISBN 13 :
Total Pages : 188 pages
Book Rating : 4.:/5 (524 download)

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Book Synopsis Reactive Ion Etching of Silicon Carbide Using CF4/O2 by : Jack Richard Bonnette

Download or read book Reactive Ion Etching of Silicon Carbide Using CF4/O2 written by Jack Richard Bonnette and published by . This book was released on 2003 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt:

ICP Etching of Silicon for Micro and Nanoscale Devices

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ISBN 13 :
Total Pages : 194 pages
Book Rating : 4.:/5 (7 download)

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Book Synopsis ICP Etching of Silicon for Micro and Nanoscale Devices by : Michael David Henry

Download or read book ICP Etching of Silicon for Micro and Nanoscale Devices written by Michael David Henry and published by . This book was released on 2010 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt: The physical structuring of silicon is one of the cornerstones of modern microelectronics and integrated circuits. Typical structuring of silicon requires generating a plasma to chemically or physically etch silicon. Although many tools have been created to do this, the most finely honed tool is the Inductively Couple Plasma Reactive Ion Etcher. This tool has the ability to finesse structures from silicon unachievable on other machines. Extracting structures such as high aspect ratio silicon nanowires requires more than just this tool, however. It requires etch masks which can adequately protect the silicon without interacting with the etching plasma and highly tuned etch chemistry able to protect the silicon structures during the etching process. In the work presented here, three highly tuned etches for silicon, and its oxide, will be described in detail. The etches presented utilize a type of etch chemistry which provides passivation while simultaneously etching, thus permitting silicon structures previously unattainable. To cover the range of applications, one etch is tuned for deep reactive ion etching of high aspect ratio micro-structures in silicon, while another is tuned for high aspect ratio nanoscale structures. The third etch described is tuned for creating structures in silicon dioxide. Following the description of these etches, two etch masks for silicon will be described. The first mask will detail a highly selective etch mask uniquely capable of protecting silicon for both etches described while being compatible with mainstream semiconductor fabrication facilities. This mask is aluminum oxide. The second mask detailed permits for a completely dry lithography on the micro and nanoscale, FIB implanted Ga etch masks. The third chapter will describe the fabrication and in situ electrical testing of silicon nanowires and nanopillars created using the methods previously described. A unique method for contacting these nanowires is also described which has ena

Reactive Ion Etching of Silicon Carbide

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ISBN 13 :
Total Pages : 146 pages
Book Rating : 4.:/5 (39 download)

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Book Synopsis Reactive Ion Etching of Silicon Carbide by : Dev Alok

Download or read book Reactive Ion Etching of Silicon Carbide written by Dev Alok and published by . This book was released on 1992 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Low Temperature Deep Reactive Ion Etching

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ISBN 13 :
Total Pages : 1 pages
Book Rating : 4.:/5 (16 download)

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Book Synopsis Low Temperature Deep Reactive Ion Etching by :

Download or read book Low Temperature Deep Reactive Ion Etching written by and published by . This book was released on 2011 with total page 1 pages. Available in PDF, EPUB and Kindle. Book excerpt: