Thermal Management Of Gallium Nitride Electronics

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Thermal Management of Gallium Nitride Electronics

Author : Marko Tadjer
Publisher : Woodhead Publishing
ISBN 13 : 0128211059
Total Pages : 498 pages
Book Rating : 4.1/5 (282 download)

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Book Synopsis Thermal Management of Gallium Nitride Electronics by : Marko Tadjer

Download or read book Thermal Management of Gallium Nitride Electronics written by Marko Tadjer and published by Woodhead Publishing. This book was released on 2022-07-13 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: Thermal Management of Gallium Nitride Electronics outlines the technical approaches undertaken by leaders in the community, the challenges they have faced, and the resulting advances in the field. This book serves as a one-stop reference for compound semiconductor device researchers tasked with solving this engineering challenge for future material systems based on ultra-wide bandgap semiconductors. A number of perspectives are included, such as the growth methods of nanocrystalline diamond, the materials integration of polycrystalline diamond through wafer bonding, and the new physics of thermal transport across heterogeneous interfaces. Over the past 10 years, the book's authors have performed pioneering experiments in the integration of nanocrystalline diamond capping layers into the fabrication process of compound semiconductor devices. Significant research efforts of integrating diamond and GaN have been reported by a number of groups since then, thus resulting in active thermal management options that do not necessarily lead to performance derating to avoid self-heating during radio frequency or power switching operation of these devices. Self-heating refers to the increased channel temperature caused by increased energy transfer from electrons to the lattice at high power. This book chronicles those breakthroughs. Includes the fundamentals of thermal management of wide-bandgap semiconductors, with historical context, a review of common heating issues, thermal transport physics, and characterization methods Reviews the latest strategies to overcome heating issues through materials modeling, growth and device design strategies Touches on emerging, real-world applications for thermal management strategies in power electronics

Gallium Nitride Electronics

Author : Rüdiger Quay
Publisher : Springer Science & Business Media
ISBN 13 : 3540718923
Total Pages : 470 pages
Book Rating : 4.5/5 (47 download)

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Book Synopsis Gallium Nitride Electronics by : Rüdiger Quay

Download or read book Gallium Nitride Electronics written by Rüdiger Quay and published by Springer Science & Business Media. This book was released on 2008-04-05 with total page 470 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.

Aspencore Guide to Gallium Nitride

Author : Maurizio Di Paolo Emilio
Publisher :
ISBN 13 : 9781735813127
Total Pages : 160 pages
Book Rating : 4.8/5 (131 download)

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Book Synopsis Aspencore Guide to Gallium Nitride by : Maurizio Di Paolo Emilio

Download or read book Aspencore Guide to Gallium Nitride written by Maurizio Di Paolo Emilio and published by . This book was released on 2021-01-20 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt: As silicon reaches its theoretical performance limits for power electronics, industry is shifting toward wide-bandgap materials like Gallium Nitride (GaN), whose properties provide clear benefits in power converters for consumer and industrial electronics. In over 150 pages covering the technology, its applications, markets and future potential, this book delves into GaN technology and its importance for power electronics professionals engaged with its implementation in power devices. The properties of GaN, such as low leakage current, significantly reduced power losses, higher power density and the ability to tolerate higher operating temperatures, all from a device smaller than its silicon-only equivalent, provide design advantages allowing previously unimaginable application performance. As an alternative to silicon, GaN can provide clear benefits in power converters for consumer and industrial electronics; chargers for wireless devices, including 5G; driver circuits for motor control; and power switches in automotive and space applications.The book also explores why GaN-based devices hold the key to addressing the energy efficiency agenda, a key strategic initiative in increasingly power-reliant industries such as data centers, electric vehicles, and renewable energy systems. Highly efficient residential and commercial energy storage systems using GaN technology will enable distribution, local storage, and on-demand access to renewable energy. Continued progress in the battery market will lead to declining battery costs and the development of smaller batteries that pair with GaN technology-based converters and inverters. Thermal management is critical in power electronics, and high efficiency in higher-power systems is always a focus. With GaN, a 50% reduction in losses can be achieved, reducing the costs and area required to manage heat. The book delves into GaN's electrical characteristics and how these can be exploited in power devices. There are also chapters that cross into the key applications for GaN devices for several markets such as space, automotive, audio, motor control and data centers. Each chapter provides a comprehensive overview of the subject matter for anyone who wants to stay on the leading edge of power electronics.

GaN Transistors for Efficient Power Conversion

Author : Alex Lidow
Publisher : John Wiley & Sons
ISBN 13 : 1119594375
Total Pages : 384 pages
Book Rating : 4.1/5 (195 download)

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Book Synopsis GaN Transistors for Efficient Power Conversion by : Alex Lidow

Download or read book GaN Transistors for Efficient Power Conversion written by Alex Lidow and published by John Wiley & Sons. This book was released on 2019-08-23 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.

Thermal Management of Microelectronic Equipment

Author : Lian-Tuu Yeh
Publisher : Asme Press Book Series on Elec
ISBN 13 :
Total Pages : 456 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Thermal Management of Microelectronic Equipment by : Lian-Tuu Yeh

Download or read book Thermal Management of Microelectronic Equipment written by Lian-Tuu Yeh and published by Asme Press Book Series on Elec. This book was released on 2002 with total page 456 pages. Available in PDF, EPUB and Kindle. Book excerpt: With an increased demand on system reliability and performance combined with the miniaturization of devices, thermal consideration has become a crucial factor in the design of electronic packaging, from chip to system levels. This new book emphasizes the solving of practical design problems in a wide range of subjects related to various heat transfer technologies. While focusing on understanding the physics involved in the subject area, the authors have provided substantial practical design data and empirical correlations used in the analysis and design of equipment. The book provides the fundamentals along with a step-by-step analysis approach to engineering, making it an indispensable reference volume. The authors present a comprehensive convective heat transfer catalog that includes correlations of heat transfer for various physical configurations and thermal boundary conditions. They also provide property tables of solids and fluids. Lian-Tuu Yeh and Richard Chu are recognized experts in the field of thermal management of electronic systems and have a combined 60 years of experience in the defense and commercial industries.

Optoelectronic Devices

Author : M Razeghi
Publisher : Elsevier
ISBN 13 : 9780080444260
Total Pages : 602 pages
Book Rating : 4.4/5 (442 download)

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Book Synopsis Optoelectronic Devices by : M Razeghi

Download or read book Optoelectronic Devices written by M Razeghi and published by Elsevier. This book was released on 2004 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides

Advanced Materials for Thermal Management of Electronic Packaging

Author : Xingcun Colin Tong
Publisher : Springer Science & Business Media
ISBN 13 : 1441977597
Total Pages : 633 pages
Book Rating : 4.4/5 (419 download)

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Book Synopsis Advanced Materials for Thermal Management of Electronic Packaging by : Xingcun Colin Tong

Download or read book Advanced Materials for Thermal Management of Electronic Packaging written by Xingcun Colin Tong and published by Springer Science & Business Media. This book was released on 2011-01-05 with total page 633 pages. Available in PDF, EPUB and Kindle. Book excerpt: The need for advanced thermal management materials in electronic packaging has been widely recognized as thermal challenges become barriers to the electronic industry’s ability to provide continued improvements in device and system performance. With increased performance requirements for smaller, more capable, and more efficient electronic power devices, systems ranging from active electronically scanned radar arrays to web servers all require components that can dissipate heat efficiently. This requires that the materials have high capability of dissipating heat and maintaining compatibility with the die and electronic packaging. In response to critical needs, there have been revolutionary advances in thermal management materials and technologies for active and passive cooling that promise integrable and cost-effective thermal management solutions. This book meets the need for a comprehensive approach to advanced thermal management in electronic packaging, with coverage of the fundamentals of heat transfer, component design guidelines, materials selection and assessment, air, liquid, and thermoelectric cooling, characterization techniques and methodology, processing and manufacturing technology, balance between cost and performance, and application niches. The final chapter presents a roadmap and future perspective on developments in advanced thermal management materials for electronic packaging.

Advances in Heat Transfer

Author :
Publisher : Elsevier
ISBN 13 : 0443193134
Total Pages : 598 pages
Book Rating : 4.4/5 (431 download)

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Book Synopsis Advances in Heat Transfer by :

Download or read book Advances in Heat Transfer written by and published by Elsevier. This book was released on 2023-11-01 with total page 598 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Heat Transfer, Volume 56, presents the latest in a serial that highlights new advances in the field, with this updated volume presenting interesting chapters written by an international board of authors. Provides the authority and expertise of leading contributors from an international board of authors Presents the latest release in Advances in Heat Transfer serials

Gallium Nitride (GaN)

Author : Farid Medjdoub
Publisher : CRC Press
ISBN 13 : 1482220040
Total Pages : 372 pages
Book Rating : 4.4/5 (822 download)

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Book Synopsis Gallium Nitride (GaN) by : Farid Medjdoub

Download or read book Gallium Nitride (GaN) written by Farid Medjdoub and published by CRC Press. This book was released on 2017-12-19 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.

Power GaN Devices

Author : Matteo Meneghini
Publisher : Springer
ISBN 13 : 3319431994
Total Pages : 380 pages
Book Rating : 4.3/5 (194 download)

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Book Synopsis Power GaN Devices by : Matteo Meneghini

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

III-Nitride Electronic Devices

Author : Rongming Chu
Publisher : Academic Press
ISBN 13 : 0128175443
Total Pages : 540 pages
Book Rating : 4.1/5 (281 download)

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Book Synopsis III-Nitride Electronic Devices by : Rongming Chu

Download or read book III-Nitride Electronic Devices written by Rongming Chu and published by Academic Press. This book was released on 2019-10 with total page 540 pages. Available in PDF, EPUB and Kindle. Book excerpt: III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more. Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas - RF and power electronics Outlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologies Written by a panel of academic and industry experts in each field

Gallium Nitride Processing for Electronics, Sensors and Spintronics

Author : Stephen J. Pearton
Publisher : Springer Science & Business Media
ISBN 13 : 1846283590
Total Pages : 380 pages
Book Rating : 4.8/5 (462 download)

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Book Synopsis Gallium Nitride Processing for Electronics, Sensors and Spintronics by : Stephen J. Pearton

Download or read book Gallium Nitride Processing for Electronics, Sensors and Spintronics written by Stephen J. Pearton and published by Springer Science & Business Media. This book was released on 2006-07-06 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.

Gallium Nitride Power Devices

Author : Hongyu Yu
Publisher : CRC Press
ISBN 13 : 1351767607
Total Pages : 292 pages
Book Rating : 4.3/5 (517 download)

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Book Synopsis Gallium Nitride Power Devices by : Hongyu Yu

Download or read book Gallium Nitride Power Devices written by Hongyu Yu and published by CRC Press. This book was released on 2017-07-06 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.

Issues in General Science and Scientific Theory and Method: 2013 Edition

Author :
Publisher : ScholarlyEditions
ISBN 13 : 1490109536
Total Pages : 1154 pages
Book Rating : 4.4/5 (91 download)

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Book Synopsis Issues in General Science and Scientific Theory and Method: 2013 Edition by :

Download or read book Issues in General Science and Scientific Theory and Method: 2013 Edition written by and published by ScholarlyEditions. This book was released on 2013-05-01 with total page 1154 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues in General Science and Scientific Theory and Method: 2013 Edition is a ScholarlyEditions™ book that delivers timely, authoritative, and comprehensive information about Mixed Methods Research. The editors have built Issues in General Science and Scientific Theory and Method: 2013 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Mixed Methods Research in this book to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of Issues in General Science and Scientific Theory and Method: 2013 Edition has been produced by the world’s leading scientists, engineers, analysts, research institutions, and companies. All of the content is from peer-reviewed sources, and all of it is written, assembled, and edited by the editors at ScholarlyEditions™ and available exclusively from us. You now have a source you can cite with authority, confidence, and credibility. More information is available at http://www.ScholarlyEditions.com/.

Gallium Nitride Epitaxy by a Novel Hybrid VPE Technique

Author : David J. Miller
Publisher : Stanford University
ISBN 13 :
Total Pages : 131 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Gallium Nitride Epitaxy by a Novel Hybrid VPE Technique by : David J. Miller

Download or read book Gallium Nitride Epitaxy by a Novel Hybrid VPE Technique written by David J. Miller and published by Stanford University. This book was released on 2011 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium nitride is an important material for the production of next-generation visible and near-UV optical devices, as well as for high temperature electronic amplifiers and circuits; however there has been no bulk method for the production of GaN substrates for device layer growth. Instead, thick GaN layers are heteroepitaxially deposited onto non-native substrates (usually sapphire) by one of two vapor phase epitaxy (VPE) techniques: MOVPE (metalorganic VPE) or HVPE (hydride VPE). Each method has its strengths and weaknesses: MOVPE has precise growth rate and layer thickness control but it is slow and expensive; HVPE is a low-cost method for high rate deposition of thick GaN, but it lacks the precise control and heterojunction layer growth required for device structures. Because of the large (14%) lattice mismatch, GaN grown on sapphire requires the prior deposition of a low temperature MOVPE nucleation layer using a second growth process in a separate deposition system. Here we present a novel hybrid VPE system incorporating elements of both techniques, allowing MOVPE and HVPE in a single growth run. In this way, a thick GaN layer can be produced directly on sapphire. GaN growth commences as small (50-100 nm diameter) coherent strained 3-dimensional islands which coalesce into a continuous film, after which 2-dimensional layer growth commences. The coalescence of islands imparts significant stress into the growing film, which increases with the film thickness until catastrophic breakage occurs, in-situ. Additionally, the mismatch in thermal expansion rates induces compressive stress upon cooling from the growth temperature of 1025°C. We demonstrate a growth technique that mitigates these stresses, by using a 2-step growth sequence: an initial high growth rate step resulting in a pitted but relaxed film, followed by a low growth rate smoothing layer. As a result, thick (> 50 [Mu]m) and freestanding films have been grown successfully. X-ray rocking curve linewidth of 105 arcseconds and 10K PL indicating no "yellow" emission indicate that the material quality is higher than that produced by conventional MOVPE. By further modifying the hybrid system to include a metallic Mn source, it is possible to grow a doped semi-insulating GaN template for use in high frequency electronics devices.

Gallium Nitride and Silicon Carbide Power Technologies 4

Author : K. Shenai
Publisher : The Electrochemical Society
ISBN 13 : 1607685442
Total Pages : 312 pages
Book Rating : 4.6/5 (76 download)

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Book Synopsis Gallium Nitride and Silicon Carbide Power Technologies 4 by : K. Shenai

Download or read book Gallium Nitride and Silicon Carbide Power Technologies 4 written by K. Shenai and published by The Electrochemical Society. This book was released on with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:

GaN-based Materials and Devices

Author : Michael Shur
Publisher : World Scientific
ISBN 13 : 9789812562364
Total Pages : 310 pages
Book Rating : 4.5/5 (623 download)

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Book Synopsis GaN-based Materials and Devices by : Michael Shur

Download or read book GaN-based Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2004 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.