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The Physics Of Submicron Lithography
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Book Synopsis The Physics of Submicron Lithography by : Kamil A. Valiev
Download or read book The Physics of Submicron Lithography written by Kamil A. Valiev and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 502 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is devoted to the physics of electron-beam, ion-beam, optical, and x-ray lithography. The need for this book results from the following considerations. The astonishing achievements in microelectronics are in large part connected with successfully applying the relatively new technology of processing (changing the prop erties of) a material into a device whose component dimensions are submicron, called photolithography. In this method the device is imaged as a pattern on a metal film that has been deposited onto a transparent substrate and by means of a broad stream of light is transferred to a semiconductor wafer within which the physical structure of the devices and the integrated circuit connections are formed layer by layer. The smallest dimensions of the device components are limited by the diffraction of the light when the pattern is transferred and are approximately the same as the wavelength of the light. Photolithography by light having a wavelength of A ~ 0.4 flm has made it possible to serially produce integrated circuits having devices whose minimal size is 2-3 flm in the 4 pattern and having 10-105 transistors per circuit.
Book Synopsis The Physics of Submicron Semiconductor Devices by : Harold L. Grubin
Download or read book The Physics of Submicron Semiconductor Devices written by Harold L. Grubin and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 729 pages. Available in PDF, EPUB and Kindle. Book excerpt: The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES......................................... 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES............................. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES................. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION.... ....................... 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS............ ...................... 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION................... 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES............. 577 S. J. Allen, Jr.
Download or read book Submicron Lithography written by and published by . This book was released on 1982 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Submicron Lithography I written by and published by . This book was released on 1982 with total page 179 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Physics of Micro/Nano-Fabrication by : Ivor Brodie
Download or read book The Physics of Micro/Nano-Fabrication written by Ivor Brodie and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 661 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this revised and expanded edition, the authors provide a comprehensive overview of the tools, technologies, and physical models needed to understand, build, and analyze microdevices. Students, specialists within the field, and researchers in related fields will appreciate their unified presentation and extensive references.
Book Synopsis Physics of Submicron Devices by : David K. Ferry
Download or read book Physics of Submicron Devices written by David K. Ferry and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 409 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purposes of this book are many. First, we must point out that it is not a device book, as a proper treatment of the range of important devices would require a much larger volume even without treating the important physics for submicron devices. Rather, the book is written principally to pull together and present in a single place, and in a (hopefully) uniform treatment, much of the understanding on relevant physics for submicron devices. Indeed, the understand ing that we are trying to convey through this work has existed in the literature for quite some time, but has not been brought to the full attention of those whose business is the making of submicron devices. It should be remarked that much of the important physics that is discussed here may not be found readily in devices at the 1.0-JLm level, but will be found to be dominant at the O.I-JLm level. The range between these two is rapidly being covered as technology moves from the 256K RAM to the 16M RAM chips.
Book Synopsis The Physics of Microfabrication by : Ivor Brodie
Download or read book The Physics of Microfabrication written by Ivor Brodie and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Physical Electronics Department of SRI International (formerly Stanford Research Institute) has been pioneering the development of devices fabricated to submicron tolerances for well over 20 years. In 1961, a landmark paper on electron-beam lithography and its associated technologies was published by K. R. Shoulderst (then at SRI), which set the stage for our subsequent efforts in this field. He had the foresight to believe that the building of such small devices was actually within the range of human capabilities. As a result of this initial momentum, our experience in the technologies associated with microfabrication has become remarkably comprehensive, despite the relatively small size of our research activity. We have frequently been asked to deliver seminars or provide reviews on various aspects of micro fabrication. These activities made us aware of the need for a comprehensive overview of the physics of microfabrication. We hope that this book will fill that need.
Book Synopsis The Physics of Submicron Structures by : Harold L. Grubin
Download or read book The Physics of Submicron Structures written by Harold L. Grubin and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 349 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research on electronic transport in ultra small dimensions has been highly stimulated by the sensational developments in silicon technology and very large scale integration. The papers in this volume, however, have been influenced to no lesser extent by the advent of molecular beam epitaxy and metal/organic chemical vapor deposition which has made possible the control of semiconductor boundaries on a quantum level. This new control of boundary condi tions in ultra small electronic research is the mathematical reason for a whole set of innovative ideas. For the first time in the history of semiconductors, it is possible to design device functions from physical considerations involving ~ngstom scale dimensions. At the time the meeting was held, July 1982, it was one of the first strong signals of the powerful developments in this area. During the meeting, important questions have been answered concerning ballistic transport, Monte Carlo simulations of high field transport and other developments pertinent to new device concepts and the understanding of small devices from physics to function. The committee members want to express their deep appreciation to the speakers who have made the meeting a success. The USER pro ject of DOD has been a vital stimulous and thanks go to the Army Research Office and the Office of Naval Research for financial sup port. Urbana, January 1984 K. Hess, Conference Chairman J. R. Brews L. R. Cooper, Ex Officio D. K. Ferry H. L. Grubin G. J. Iafrate M. I. Nathan A. F.
Book Synopsis Submicron Lithography by : Phillip D. Blais
Download or read book Submicron Lithography written by Phillip D. Blais and published by . This book was released on 1982 with total page 200 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Semiconductor Device Physics and Simulation by : J.S. Yuan
Download or read book Semiconductor Device Physics and Simulation written by J.S. Yuan and published by Springer Science & Business Media. This book was released on 2013-11-22 with total page 341 pages. Available in PDF, EPUB and Kindle. Book excerpt: The advent of the microelectronics technology has made ever-increasing numbers of small devices on a same chip. The rapid emergence of ultra-large-scaled-integrated (ULSI) technology has moved device dimension into the sub-quarter-micron regime and put more than 10 million transistors on a single chip. While traditional closed-form analytical models furnish useful intuition into how semiconductor devices behave, they no longer provide consistently accurate results for all modes of operation of these very small devices. The reason is that, in such devices, various physical mechanisms affect the device performance in a complex manner, and the conventional assumptions (i. e. , one-dimensional treatment, low-level injection, quasi-static approximation, etc. ) em ployed in developing analytical models become questionable. Thus, the use of numerical device simulation becomes important in device modeling. Researchers and engineers will rely even more on device simulation for device design and analysis in the future. This book provides comprehensive coverage of device simulation and analysis for various modem semiconductor devices. It will serve as a reference for researchers, engineers, and students who require in-depth, up-to-date information and understanding of semiconductor device physics and characteristics. The materials of the book are limited to conventional and mainstream semiconductor devices; photonic devices such as light emitting and laser diodes are not included, nor does the book cover device modeling, device fabrication, and circuit applications.
Book Synopsis Physics of High-Speed Transistors by : Juras Pozela
Download or read book Physics of High-Speed Transistors written by Juras Pozela and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 351 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book examines the physical principles behind the operation of high-speed transistors operating at frequencies above 10 GHz and having switching times less than 100 psec. If the 1970s cannot be remembered for the opportunities for creating and extensively using transistors operating at such high speeds, then, the situation has changed radically because of rapid progress in sub micrometer technology for manufacturing transistors and integrated circuits from GaAs and other semiconductor materials and the powerful influx of new physical concepts. Not only have transistors having switching speeds of 50-100 psec operating in the 10-20 GHz region been created in recent years, but the possibilities for manufacturing transistors operating one to two orders of magnitude faster have been revealed. As superhigh-speed transistors have been created, many of the most important areas of technology such as communications, computing technology, television, radar, and the manufacture of scientific, industrial, and medical equipment have qualitatively changed. Microwave transistors operating at millimeter wavelengths make it possible to produce compact and highly efficient equipment for communications and radar technology. Transistors with switching speeds better than 10-100 psec make it possible to increase the speed of microprocessors and other computer components to tens of billions of operations per second and thereby solve one of the most pressing problems of modern electronics - increasing the speed of digital information processing.
Book Synopsis Scanning Probe Lithography by : Hyongsok T. Soh
Download or read book Scanning Probe Lithography written by Hyongsok T. Soh and published by Springer Science & Business Media. This book was released on 2013-03-14 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt: Scanning Probe Lithography (SPL) describes recent advances in the field of scanning probe lithography, a high resolution patterning technique that uses a sharp tip in close proximity to a sample to pattern nanometer-scale features on the sample. SPL is capable of patterning sub-30nm features with nanometer-scale alignment registration. It is a relatively simple, inexpensive, reliable method for patterning nanometer-scale features on various substrates. It has potential applications for nanometer-scale research, for maskless semiconductor lithography, and for photomask patterning. The authors of this book have been key players in this exciting new field. Calvin Quate has been involved since the beginning in the early 1980s and leads the research time that is regarded as the foremost group in this field. Hyongsok Tom Soh and Kathryn Wilder Guarini have been the members of this group who, in the last few years, have brought about remarkable series of advances in SPM lithography. Some of these advances have been in the control of the tip which has allowed the scanning speed to be increased from mum/second to mm/second. Both non-contact and in-contact writing have been demonstrated as has controlled writing of sub-100 nm lines over large steps on the substrate surface. The engineering of a custom-designed MOSFET built into each microcantilever for individual current control is another notable achievement. Micromachined arrays of probes each with individual control have been demonstrated. One of the most intriguing new aspects is the use of directly-grown carbon nanotubes as robust, high-resolution emitters. In this book the authors concisely and authoritatively describe the historical context, the relevant inventions, and the prospects for eventual manufacturing use of this exciting new technology.
Book Synopsis The Physics and Fabrication of Microstructures and Microdevices by : Michael J. Kelly
Download or read book The Physics and Fabrication of Microstructures and Microdevices written by Michael J. Kelly and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 481 pages. Available in PDF, EPUB and Kindle. Book excerpt: les Houches This Winter School on "The Physics and Fabrication of Microstructures" originated with a European industrial decision to investigate in some detail the potential of custom-designed microstructures for new devices. Beginning in 1985, GEC and THOMSON started a collaboration on these subjects, supported by an ESPRIT grant from the Commission of the European Com munity. To the outside observer of the whole field, it appears clear that the world effort is very largely based in the United States and Japan. It also appears that cooperation and dissemination of results are very well organised outside Europe and act as a major influence on the development of new concepts and devices. In Japan, a main research programme of the Research and Development for Basic Technology for Future Industries is focused on "Future Electron Devices". In Japan and in the United States, many workshops are organised annually in order to bring together the major specialists in industry and academia, allowing fast dissemination of advances and contacts for setting up cooperative efforts.
Book Synopsis Physics and Properties of Narrow Gap Semiconductors by : Junhao Chu
Download or read book Physics and Properties of Narrow Gap Semiconductors written by Junhao Chu and published by Springer Science & Business Media. This book was released on 2007-11-21 with total page 613 pages. Available in PDF, EPUB and Kindle. Book excerpt: Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. They often operate at the extremes of the rules of semiconductor science. This book offers clear descriptions of crystal growth and the fundamental structure and properties of these unique materials. Topics covered include band structure, optical and transport properties, and lattice vibrations and spectra. A thorough treatment of the properties of low-dimensional systems and their relation to infrared applications is provided.
Book Synopsis Microfluidics for Cellular Applications by : Gerardo Perozziello
Download or read book Microfluidics for Cellular Applications written by Gerardo Perozziello and published by Elsevier. This book was released on 2023-04-13 with total page 433 pages. Available in PDF, EPUB and Kindle. Book excerpt: Microfluidics for Cellular Applications describes microfluidic devices for cell screening from a physical, technological and applications point-of-view, presenting a comparison with the cell microenvironment and conventional instruments used in medicine. Microfluidic technologies, protocols, devices for cell screening and treatment have reached an advanced state but are mainly used in research. Sections break them down into practical applications and conventional medical procedures and offers insights and analysis on how higher resolutions and fast operations can be reached. This is an important resource for those from an engineering and technology background who want to understand more and gain additional insights on cell screening processes. Outlines the major applications of microfluidic devices in medicine and biotechnology Assesses the major challenges of using microfluidic devices in terms of complexity of the control set-up, ease of use, integration capability, automation level, analysis throughput, content and costs Describes the major fabrication techniques for assembling effective microfluidic devices for bioapplications
Book Synopsis Semiconductor Alloys by : An-Ben Chen
Download or read book Semiconductor Alloys written by An-Ben Chen and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the first comprehensive treatment of these technologically important materials, the authors provide theories linking the properties of semiconductor alloys to their constituent compounds. Topics include crystal structures, bonding, elastic properties, phase diagrams, band structures, transport, ab-initio theories, and semi-empirical theories. Each chapter includes extensive tables and figures as well as problem sets.
Book Synopsis Field Emission in Vacuum Microelectronics by : George N. Fursey
Download or read book Field Emission in Vacuum Microelectronics written by George N. Fursey and published by Springer Science & Business Media. This book was released on 2007-12-24 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: Field emission is a phenomenon described by quantum mechanics. Its emission capability is millions times higher than that of any other known types of electron emission. Nowadays this phenomenon is experiencing a new life due to wonderful applications in the atomic resolution microscopy, in electronic holography, and in the vacuum micro- and nanoelectronics in general. The main field emission properties, and some most remarkable experimental facts and applications, are described in this book.
