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The Formation Of Amorphous Silicon By Light Ion Damage
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Author :Lawrence Berkeley Laboratory. Materials and Molecular Research Division Publisher : ISBN 13 : Total Pages :340 pages Book Rating :4.3/5 (91 download)
Book Synopsis Materials and Molecular Research Division Annual Report by : Lawrence Berkeley Laboratory. Materials and Molecular Research Division
Download or read book Materials and Molecular Research Division Annual Report written by Lawrence Berkeley Laboratory. Materials and Molecular Research Division and published by . This book was released on 1986 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Energy Research Abstracts written by and published by . This book was released on 1985 with total page 664 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ion Beams in Materials Processing and Analysis by : Bernd Schmidt
Download or read book Ion Beams in Materials Processing and Analysis written by Bernd Schmidt and published by Springer Science & Business Media. This book was released on 2012-12-13 with total page 425 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive review of ion beam application in modern materials research is provided, including the basics of ion beam physics and technology. The physics of ion-solid interactions for ion implantation, ion beam synthesis, sputtering and nano-patterning is treated in detail. Its applications in materials research, development and analysis, developments of special techniques and interaction mechanisms of ion beams with solid state matter result in the optimization of new material properties, which are discussed thoroughly. Solid-state properties optimization for functional materials such as doped semiconductors and metal layers for nano-electronics, metal alloys, and nano-patterned surfaces is demonstrated. The ion beam is an important tool for both materials processing and analysis. Researchers engaged in solid-state physics and materials research, engineers and technologists in the field of modern functional materials will welcome this text.
Download or read book ERDA Energy Research Abstracts written by and published by . This book was released on 1983 with total page 972 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ion Beam Processes in Advanced Electronic Materials and Device Technology: Volume 45 by : B. R. Appleton
Download or read book Ion Beam Processes in Advanced Electronic Materials and Device Technology: Volume 45 written by B. R. Appleton and published by . This book was released on 1985-08-30 with total page 426 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Download or read book Energy Research Abstracts written by and published by . This book was released on 1989 with total page 720 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon-on-insulator Technology and Devices XII by : George K. Celler
Download or read book Silicon-on-insulator Technology and Devices XII written by George K. Celler and published by The Electrochemical Society. This book was released on 2005 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Microelectronic Materials and Processes by : Roland Levy
Download or read book Microelectronic Materials and Processes written by Roland Levy and published by Springer Science & Business Media. This book was released on 1989-01-31 with total page 1006 pages. Available in PDF, EPUB and Kindle. Book excerpt: The primary thrust of very large scale integration (VLS!) is the miniaturization of devices to increase packing density, achieve higher speed, and consume lower power. The fabrication of integrated circuits containing in excess of four million components per chip with design rules in the submicron range has now been made possible by the introduction of innovative circuit designs and the development of new microelectronic materials and processes. This book addresses the latter challenge by assessing the current status of the science and technology associated with the production of VLSI silicon circuits. It represents the cumulative effort of experts from academia and industry who have come together to blend their expertise into a tutorial overview and cohesive update of this rapidly expanding field. A balance of fundamental and applied contributions cover the basics of microelectronics materials and process engineering. Subjects in materials science include silicon, silicides, resists, dielectrics, and interconnect metallization. Subjects in process engineering include crystal growth, epitaxy, oxidation, thin film deposition, fine-line lithography, dry etching, ion implantation, and diffusion. Other related topics such as process simulation, defects phenomena, and diagnostic techniques are also included. This book is the result of a NATO-sponsored Advanced Study Institute (AS!) held in Castelvecchio Pascoli, Italy. Invited speakers at this institute provided manuscripts which were edited, updated, and integrated with other contributions solicited from non-participants to this AS!.
Book Synopsis Ion Implantation and Beam Processing by : J. S. Williams
Download or read book Ion Implantation and Beam Processing written by J. S. Williams and published by Academic Press. This book was released on 2014-06-28 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision cascades and spike effects. The text also describes the implantation of insulators (ices and lithographic materials); the ion-bombardment-induced compositions changes in alloys and compounds; and the fundamentals and applications of ion beam and laser mixing. The high-dose implantation and the trends of ion implantation in silicon technology are also considered. The book further tackles the implantation in gaAs technology and the contacts and interconnections on semiconductors. Engineers and people involved in microelectronics will find the book invaluable.
Download or read book VLSI Handbook written by Norman Einspruch and published by Academic Press. This book was released on 2012-12-02 with total page 929 pages. Available in PDF, EPUB and Kindle. Book excerpt: VLSI Handbook is a reference guide on very large scale integration (VLSI) microelectronics and its aspects such as circuits, fabrication, and systems applications. This handbook readily answers specific questions and presents a systematic compilation of information regarding the VLSI technology. There are a total of 52 chapters in this book and are grouped according to the fields of design, materials and processes, and examples of specific system applications. Some of the chapters under fields of design are design automation for integrated circuits and computer tools for integrated circuit design. For the materials and processes, there are many chapters that discuss this aspect. Some of them are manufacturing process technology for metal-oxide semiconductor (MOS) VLSI; MOS VLSI circuit technology; and facilities for VLSI circuit fabrication. Other concepts and materials discussed in the book are the use of silicon material in different processes of VLSI, nitrides, silicides, metallization, and plasma. This handbook is very useful to students of engineering and physics. Also, researchers (in physics and chemistry of materials and processes), device designers, and system designers can also benefit from this book.
Book Synopsis Microscopy of Semiconducting Materials 1983, Third Oxford Conference on Microscopy of Semiconducting Materials, St Catherines College, March 1983 by : A.G. Cullis
Download or read book Microscopy of Semiconducting Materials 1983, Third Oxford Conference on Microscopy of Semiconducting Materials, St Catherines College, March 1983 written by A.G. Cullis and published by CRC Press. This book was released on 2020-11-25 with total page 533 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains invited and contributed papers at the conference on Microscopy of Semiconducting Materials which took place on 21–23 March 1983 in St Cathernine's College, Oxford. The conference was the third in the series devoted to advances in microscopical studies of semiconductors.
Book Synopsis Proceedings of the Fourth International Symposium of Process Physics and Modeling in Semiconductor Technology by : G. R. Srinivasan
Download or read book Proceedings of the Fourth International Symposium of Process Physics and Modeling in Semiconductor Technology written by G. R. Srinivasan and published by The Electrochemical Society. This book was released on 1996 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Microscopy of Semiconducting Materials 1983, Third Oxford Conference on Microscopy of Semiconducting Materials, St Catherines College, March 1983 by : Cullis
Download or read book Microscopy of Semiconducting Materials 1983, Third Oxford Conference on Microscopy of Semiconducting Materials, St Catherines College, March 1983 written by Cullis and published by CRC Press. This book was released on 1983-01-01 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ion Implantation and Synthesis of Materials by : Michael Nastasi
Download or read book Ion Implantation and Synthesis of Materials written by Michael Nastasi and published by Springer Science & Business Media. This book was released on 2007-05-16 with total page 271 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.
Book Synopsis Comprehensive Semiconductor Science and Technology by :
Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Book Synopsis Ion Implantation in Semiconductors 1976 by : Fred Chernow
Download or read book Ion Implantation in Semiconductors 1976 written by Fred Chernow and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 733 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Fifth International Conference on Ion Implantation took place in Boulder, Colorado between the 9th and 13th of August 1976. Papers were delivered by scientists and engineers from 15 countries, and the attendees represented 19 countries. As has become the custom at these conferences, the sessions were intense with the coffee breaks and evenings given to informal meetings among the participants. It was a time to renew old friendships, begin new ones, exchange ideas, personally question authors of papers that appeared in the literature since the last conference and find out what was generally happening in Ion Implantation. In recent years it has beome more difficult to get funding to travel to such meetings. To assist the participating authors financial aid was solicited from industry and the Office of Naval Research. We are most grateful for their positive response to our requests. The success of the conference was in part due to their generous contributions. The Program Committee had the unhappy task of the reviewing of more than 170 abstracts. The result of their labors was well worth their effort. Much thanks goes to them for molding the conference into an accurate representation of activities in the field. Behind the scenes in Boulder, local arrangements were handled ably by Graeme Eldridge. The difficulty of this task cannot be overemphasized. Our thanks to him for a job well done.
