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Symmetry And Strain Induced Effects In Semiconductors
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Book Synopsis Symmetry and Strain-induced Effects in Semiconductors by : Gennadiĭ Levikovich Bir
Download or read book Symmetry and Strain-induced Effects in Semiconductors written by Gennadiĭ Levikovich Bir and published by Halsted Press. This book was released on 1974-01-01 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Symmetry and Strain-induced Effects in Semiconductors by : Gennadij Levikovic Bir
Download or read book Symmetry and Strain-induced Effects in Semiconductors written by Gennadij Levikovic Bir and published by . This book was released on 1974 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Polarization Effects in Semiconductors by : Debdeep Jena
Download or read book Polarization Effects in Semiconductors written by Debdeep Jena and published by Springer Science & Business Media. This book was released on 2008 with total page 523 pages. Available in PDF, EPUB and Kindle. Book excerpt: Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures. These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices. The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGaInN, and other nitrides, and SiC heterostructures. It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects. In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered. The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the "Polarization Effects in Semiconductors" DOD funded Multi Disciplinary University Research Initiative. This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications. It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development.
Book Synopsis Strain-Induced Effects in Advanced MOSFETs by : Viktor Sverdlov
Download or read book Strain-Induced Effects in Advanced MOSFETs written by Viktor Sverdlov and published by Springer Science & Business Media. This book was released on 2011-01-06 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt: Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.
Download or read book Solid State Physics written by and published by Academic Press. This book was released on 1992-11-18 with total page 419 pages. Available in PDF, EPUB and Kindle. Book excerpt: Solid State Physics
Book Synopsis Strain Effect in Semiconductors by : Yongke Sun
Download or read book Strain Effect in Semiconductors written by Yongke Sun and published by Springer Science & Business Media. This book was released on 2009-11-14 with total page 353 pages. Available in PDF, EPUB and Kindle. Book excerpt: Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. Discusses relevant applications of strain while also focusing on the fundamental physics pertaining to bulk, planar, and scaled nano-devices. Hence, this book is relevant for current strained Si logic technology as well as for understanding the physics and scaling for future strained nano-scale devices.
Book Synopsis Symmetry and Symmetry-Breaking in Semiconductors by : Bernd Hönerlage
Download or read book Symmetry and Symmetry-Breaking in Semiconductors written by Bernd Hönerlage and published by Springer. This book was released on 2018-09-19 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses group theory investigations of zincblende and wurtzite semiconductors under symmetry-breaking conditions. The text presents the group theory elements required to develop a multitude of symmetry-breaking problems, giving scientists a fast track to bypass the need for recalculating electronic states. The text is not only a valuable resource for speeding up calculations but also illustrates the construction of effective Hamiltonians for a chosen set of electronic states in crystalline semiconductors. Since Hamiltonians have to be invariant under the transformations of the point group, the crystal symmetry determines the multiplet structure of these states in the presence of spin-orbit, crystal-field, or exchange interactions. Symmetry-breaking leads to additional coupling of the states, resulting in shifts and/or splittings of the multiplets. Such interactions may be intrinsic, as in the case of the quasi-particle dispersion, or extrinsic, induced by magnetic, electric, or strain fields. Using a power expansion of the perturbations these interaction terms can be determined in their parameterized form in a unique way. The hierarchic structure of this invariant development allows to estimate the importance of particular symmetry-breaking effects in the Hamiltonian. A number of selected experimental curves are included to illustrate the symmetry-based discussions, which are especially important in optical spectroscopy. This text is written for graduate students and researchers who want to understand and simulate experimental findings reflecting the fine structure of electronic or excitonic states in crystalline semiconductors.
Book Synopsis Semiconductor Strain Metrology by : Terence K. S. Wong
Download or read book Semiconductor Strain Metrology written by Terence K. S. Wong and published by Bentham Science Publishers. This book was released on 2012 with total page 141 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book surveys the major and newly developed techniques for semiconductor strain metrology. Semiconductor strain metrology has emerged in recent years as a topic of great interest to researchers involved in thin film and nanoscale device characterizati
Author :Mikhail Levinshtein Publisher :Springer Science & Business Media ISBN 13 :9780883187838 Total Pages :392 pages Book Rating :4.1/5 (878 download)
Book Synopsis Best of Soviet Semiconductor Physics and Technology by : Mikhail Levinshtein
Download or read book Best of Soviet Semiconductor Physics and Technology written by Mikhail Levinshtein and published by Springer Science & Business Media. This book was released on 1991-02 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: Culled from the thousands of papers published in American Institute of
Book Synopsis Physics Of Semiconductors, The - Proceedings Of The 22nd International Conference (In 3 Volumes) by : David J Lockwood
Download or read book Physics Of Semiconductors, The - Proceedings Of The 22nd International Conference (In 3 Volumes) written by David J Lockwood and published by World Scientific. This book was released on 1995-01-20 with total page 2858 pages. Available in PDF, EPUB and Kindle. Book excerpt: These proceedings review the progress in most aspects of semiconductor physics, including those related to materials, processing and devices. The conference continues the tradition of the ICPS series and these volumes include state-of-the-art lectures. The plenary and invited papers address areas of major interest.These volumes will serve as excellent material for researchers in semiconductor physics and related fields.
Book Synopsis The Piezojunction Effect in Silicon Integrated Circuits and Sensors by : Fabiano Fruett
Download or read book The Piezojunction Effect in Silicon Integrated Circuits and Sensors written by Fabiano Fruett and published by Springer Science & Business Media. This book was released on 2006-04-18 with total page 174 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book describes techniques that can reduce mechanical-stress-induced inaccuracy and long-term instability in chips. The authors also show that the piezojunction effect can be applied for new types of mechanical-sensor structures. Thermo-mechanical stress is induced when packaged chips cool down to the temperature of application.
Book Synopsis Simulation of Transport in Nanodevices by : François Triozon
Download or read book Simulation of Transport in Nanodevices written by François Triozon and published by John Wiley & Sons. This book was released on 2016-11-22 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: Linear current-voltage pattern, has been and continues to be the basis for characterizing, evaluating performance, and designing integrated circuits, but is shown not to hold its supremacy as channel lengths are being scaled down. In a nanoscale circuit with reduced dimensionality in one or more of the three Cartesian directions, quantum effects transform the carrier statistics. In the high electric field, the collision free ballistic transform is predicted, while in low electric field the transport remains predominantly scattering-limited. In a micro/nano-circuit, even a low logic voltage of 1 V is above the critical voltage triggering nonohmic behavior that results in ballistic current saturation. A quantum emission may lower this ballistic velocity.
Book Synopsis High Magnetic Fields in Semiconductor Physics II by : Gottfried Landwehr
Download or read book High Magnetic Fields in Semiconductor Physics II written by Gottfried Landwehr and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 666 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains contributions presented at the International Conference "The Application of High Magnetic Fields in Semiconductor Physics", which was held at the University of Wiirzburg from August 22 to 26, 1988. In the tradition of previous Wiirzburg meetings on the subject - the first conference was held in 1972 - only invited papers were presented orally. All 42 lecturers were asked to review their subject to some extent so that this book gives a good overview of the present state of the respective topic. A look at the contents shows that the subjects which have been treated at previous conferences have not lost their relevance. On the contrary, the application of high magnetic fields to semiconductors has grown substantially during the recent past. For the elucidation of the electronic band structure of semicon ductors high magnetic fields are still an indispensable tool. The investigation of two-dimensional electronic systems especially is frequently connected with the use of high magnetic fields. The reason for this is that a high B-field adds angular momentum quantization to the boundary quantization present in het erostructures and superlattices. A glance at the contributions shows that the majority deal with 2D properties. Special emphasis was on the integral and fractional quantum Hall effect. Very recent results related to the observation of a fraction with an even denbminator were presented. It became obvious that the polarization of the different fractional Landau levels is more complicated than originally anticipated.
Book Synopsis New Developments in Semiconductor Research by : Thomas S. Miller
Download or read book New Developments in Semiconductor Research written by Thomas S. Miller and published by Nova Publishers. This book was released on 2005 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book includes within its scope studies of the structural, electrical, optical and acoustical properties of bulk, low-dimensional and amorphous semiconductors; computational semiconductor physics; interface properties, including the physics and chemistry of heterojunctions, metal-semiconductor and insulator-semiconductor junctions; all multi-layered structures involving semiconductor components; dopant incorporation; growth and preparation of materials, including both epitaxial (e.g. molecular beam and chemical vapour methods) and bulk techniques; and in situ monitoring of epitaxial growth processes. Also included are appropriate aspects of surface science such as the influence of growth kinetics and chemical processing on layer and device properties. The physics of semiconductor electronic and optoelectronic devices are examined, including theoretical modelling and experimental demonstration; all aspects of the technology of semiconductor device and circuit fabrication. structures incorporating Langmuir-Blodgett films; resists, lithography and metalisation where they are concerned with the definition of small geometry structure. The structural, electrical and optical characterisation of materials and device structures are also included. The scope encompasses materials and device reliability: reliability evaluation of technologies; failure analysis and advanced analysis techniques such as SEM, E-beam, optical emission microscopy, acoustic microscopy techniques; liquid crystal techniques; noise measurement, reliability prediction and simulation; reliability indicators; failure mechanisms, including charge migration, trapping, oxide breakdown, hot carrier effects, electro-migration, stress migration; package-related failure mechanisms; and effects of operational and environmental stresses on reliability.
Book Synopsis Space Group Representations by : Nikolai B. Melnikov
Download or read book Space Group Representations written by Nikolai B. Melnikov and published by Springer Nature. This book was released on 2023-01-01 with total page 343 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is devoted to the construction of space group representations, their tabulation, and illustration of their use. Representation theory of space groups has a wide range of applications in modern physics and chemistry, including studies of electron and phonon spectra, structural and magnetic phase transitions, spectroscopy, neutron scattering, and superconductivity. The book presents a clear and practical method of deducing the matrices of all irreducible representations, including double-valued, and tabulates the matrices of irreducible projective representations for all 32 crystallographic point groups. One obtains the irreducible representations of all 230 space groups by multiplying the matrices presented in these compact and convenient to use tables by easily computed factors. A number of applications to the electronic band structure calculations are illustrated through real-life examples of different crystal structures. The book's content is accessible to both graduate and advanced undergraduate students with elementary knowledge of group theory and is useful to a wide range of experimentalists and theorists in materials and solid-state physics.
Book Synopsis Multi-Band Effective Mass Approximations by : Matthias Ehrhardt
Download or read book Multi-Band Effective Mass Approximations written by Matthias Ehrhardt and published by Springer. This book was released on 2014-07-17 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book addresses several mathematical models from the most relevant class of kp-Schrödinger systems. Both mathematical models and state-of-the-art numerical methods for adequately solving the arising systems of differential equations are presented. The operational principle of modern semiconductor nano structures, such as quantum wells, quantum wires or quantum dots, relies on quantum mechanical effects. The goal of numerical simulations using quantum mechanical models in the development of semiconductor nano structures is threefold: First they are needed for a deeper understanding of experimental data and of the operational principle. Secondly, they allow us to predict and optimize in advance the qualitative and quantitative properties of new devices in order to minimize the number of prototypes needed. Semiconductor nano structures are embedded as an active region in semiconductor devices. Thirdly and finally, the results of quantum mechanical simulations of semiconductor nano structures can be used with upscaling methods to deliver parameters needed in semi-classical models for semiconductor devices, such as quantum well lasers. This book covers in detail all these three aspects using a variety of illustrative examples. Readers will gain detailed insights into the status of the multiband effective mass method for semiconductor nano structures. Both users of the kp method as well as advanced researchers who want to advance the kp method further will find helpful information on how to best work with this method and use it as a tool for characterizing the physical properties of semiconductor nano structures. The book is primarily intended for graduate and Ph.D. students in applied mathematics, mathematical physics and theoretical physics, as well as all those working in quantum mechanical research or the semiconductor / opto-electronic industry who are interested in new mathematical aspects.
Book Synopsis III-Nitride Semiconductors by : M.O. Manasreh
Download or read book III-Nitride Semiconductors written by M.O. Manasreh and published by Elsevier. This book was released on 2000-12-06 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.
