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Author : Jingxi Sun
Publisher :
ISBN 13 :
Total Pages : 310 pages
Book Rating : 4.:/5 (89 download)
Download or read book Surface Chemistry and Surface Electronic Properties of Gallium Arsenide and Gallium Nitride written by Jingxi Sun and published by . This book was released on 2000 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Arie Huijser
Publisher :
ISBN 13 :
Total Pages : 193 pages
Book Rating : 4.:/5 (636 download)
Download or read book Electronic Properties of the 110 surface of Gallium Arsenide and other III-V compounds written by Arie Huijser and published by . This book was released on 1979 with total page 193 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Kimberly A. Rickert
Publisher :
ISBN 13 :
Total Pages : 170 pages
Book Rating : 4.:/5 (89 download)
Download or read book Surface Chemistry and Electronic Properties of Nitride Semiconductors Studied Via Synchrotron-based Photoemission Spectroscopy written by Kimberly A. Rickert and published by . This book was released on 2002 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Marko Mykola Gregory Slusarczuk
Publisher :
ISBN 13 :
Total Pages : 288 pages
Book Rating : 4.:/5 (724 download)
Download or read book Study of Electronic and Optical Properties of Gallium Arsenide Surfaces and Interfaces written by Marko Mykola Gregory Slusarczuk and published by . This book was released on 1979 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Stephen J. Pearton
Publisher : Springer Science & Business Media
ISBN 13 : 9781852339357
Total Pages : 402 pages
Book Rating : 4.3/5 (393 download)
Download or read book Gallium Nitride Processing for Electronics, Sensors and Spintronics written by Stephen J. Pearton and published by Springer Science & Business Media. This book was released on 2006-02-24 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics. Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors.
Author : Theodoros Michael Valahas
Publisher :
ISBN 13 :
Total Pages : 246 pages
Book Rating : 4.:/5 (25 download)
Download or read book Electrical Properties of Gallium Arsenide "real" Surfaces written by Theodoros Michael Valahas and published by . This book was released on 1969 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Kenneth Dale Rachocki
Publisher :
ISBN 13 :
Total Pages : 274 pages
Book Rating : 4.:/5 (229 download)
Download or read book Chemical and Electronic Properties of the Dielectric/gallium Arsenide Interface written by Kenneth Dale Rachocki and published by . This book was released on 1990 with total page 274 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : James H. Edgar
Publisher : Institution of Electrical Engineers
ISBN 13 :
Total Pages : 692 pages
Book Rating : 4.3/5 (91 download)
Download or read book Properties, Processing and Applications of Gallium Nitride and Related Semiconductors written by James H. Edgar and published by Institution of Electrical Engineers. This book was released on 1999 with total page 692 pages. Available in PDF, EPUB and Kindle. Book excerpt: Based on its outstanding properties, including a wide energy band gap, high thermal conductivity, and high electron drift velocity, GaN is uniquely suited for many novel devices including solar-blind UV light detectors, high power microwave transistors, and cold cathode electron emitters. This excellent reference covers the basic physical and chemical properties, surveys existing processing technology, and presents summaries of the current state-of-the-art of devices.
Author : M. R. Brozel
Publisher : Inst of Engineering & Technology
ISBN 13 : 9780852968857
Total Pages : 981 pages
Book Rating : 4.9/5 (688 download)
Download or read book Properties of Gallium Arsenide written by M. R. Brozel and published by Inst of Engineering & Technology. This book was released on 1996 with total page 981 pages. Available in PDF, EPUB and Kindle. Book excerpt: It was in 1986 that INSPEC (The Information Division of the Institution of Electrical Engineers) published the book Properties of Gallium Arsenide. Since then, major developments have taken place. This third edition is comprised of 150 specially commissioned articles contributed by experts from the USA, Europe and Japan.
Author : F. A. Ponce
Publisher :
ISBN 13 :
Total Pages : 1008 pages
Book Rating : 4.:/5 (318 download)
Download or read book Gallium Nitride and Related Materials: Volume 395 written by F. A. Ponce and published by . This book was released on 1996-09-04 with total page 1008 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reflects the excitement in the scientific community about III-V nitrides. Based on papers presented at the First International Symposium on Gallium Nitride and Related Materials (ISGN-1), it reveals the large amount of work that has taken place since the field exploded with the announcement of commercial blue-light-emitting devices. The compound semiconductors in the III-V nitride systems are of increasing interest for high-performance optoelectronic and electronic device applications. These wide-bandgap semiconductor materials are also of great fundamental scientific interest because of their unique structural, electrical and optical properties. From the advances in the technologies for the heteroepitaxial growth of these materials, leading to improved quality and device performance, it is expected that III-V nitrides will soon be of significant practical and commercial interest. Topics include: crystal growth - substrates and early stages; molecular beam growth techniques; chemical vapor phase and alloys and novel growth techniques; structural properties; electronic properties; optical properties; point defects; hydrogen, etching and other materials processes; surfaces and metal contacts and devices.
Author :
Publisher : INSPEC
ISBN 13 :
Total Pages : 370 pages
Book Rating : 4.3/5 (91 download)
Download or read book Properties of Gallium Arsenide written by and published by INSPEC. This book was released on 1986 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Carl Wilmsen
Publisher : Springer Science & Business Media
ISBN 13 : 1468448358
Total Pages : 472 pages
Book Rating : 4.4/5 (684 download)
Download or read book Physics and Chemistry of III-V Compound Semiconductor Interfaces written by Carl Wilmsen and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt: The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is spread over the last 15 years and appears in many journals and conference proceedings. Understanding this literature requires consider able effort by the seasoned researcher, and even more for those starting out in the field or by engineers and scientists who wish to apply this knowledge to the fabrication of devices. The purpose of this book is to bring together much of the fundamental and practical knowledge on the physics and chemistry of the 111-V compounds with metals and dielectrics. The authors of this book have endeavored to provide concise overviews of these areas with many tahles ancI grarhs whic. h c. omr>are and summarize the literature. In this way, the book serves as both an insightful treatise on III-V interfaces and a handy reference to the literature. The selection of authors was mandated by the desire to include both fundamental and practical approaches, covering device and material aspects of the interfaces. All of the authors are recognized experts on III-V interfaces and each has worked for many years in his subject area. This experience is projected in the breadth of understanding in each chapter.
Author : M. J. Howes
Publisher :
ISBN 13 :
Total Pages : 608 pages
Book Rating : 4.3/5 (91 download)
Download or read book Gallium Arsenide written by M. J. Howes and published by . This book was released on 1985 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the seventh volume in the Wiley Series in Solid State Devices and Circuits, and deals comprehensively with the use of gallium arsenide for high frequency and high speed circuits.
Author : Cheah Sook Fong
Publisher : Penerbit USM
ISBN 13 : 9674611231
Total Pages : 100 pages
Book Rating : 4.6/5 (746 download)
Download or read book Fabrication of Porous Gallium Nitride by Photoelectrochemical Etching Method (Penerbit USM) written by Cheah Sook Fong and published by Penerbit USM. This book was released on 2017 with total page 100 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photoelectrochemical (PEC) etching is a simple and inexpensive wet etching approach that is widely used to fabricate porous gallium nitride (GaN) thin films. However, many fundamental issues on the etching mechanism and the optical response of the fabricated porous structure still remain unclear. In this book, PEC etched porous GaN thin films with a variety of morphologies such as circular, hexagonal, leaf like-, and honeycomb-like patterns were described in detail. The effects of semiconductor types, etching voltage and etching duration on the surface morphology and the optical response of the fabricated porous structure were discussed. Attenuated total reflection method which is very sensitive to the surface layer of the porous GaN was applied to extract the carrier concentration, porosity, and layer thicknesses or the porous layer. Through this book, a better understanding of the PEC etching of the porous GaN can be obtained.
Author :
Publisher :
ISBN 13 :
Total Pages : 702 pages
Book Rating : 4.:/5 (31 download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Edmond Rowan Ward
Publisher :
ISBN 13 :
Total Pages : 142 pages
Book Rating : 4.:/5 (65 download)
Download or read book The Electrical Properties of the Silicon Nitride-gallium Arsenide Interface written by Edmond Rowan Ward and published by . This book was released on 1970 with total page 142 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Shey-shi Lu
Publisher :
ISBN 13 :
Total Pages : 310 pages
Book Rating : 4.:/5 (319 download)
Download or read book Uniaxial Stress Effects on the Electronic Properties of Gallium Arsenide/aluminum Gallium Arsenide Single/double Barrier Heterostructures written by Shey-shi Lu and published by . This book was released on 1991 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:
